Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972728

Ken A. Nagamatsu, S. Afroz, Shalini Gupta, S. Wanis, J. Hartman, E. Stewart, P. Shea, K. Renaldo, R. Howell, Brian Novak, Annaliese Drechsler, Josephine B. Chang, D. Dawson, R. Freitag, K. Frey, Monique Farrell, Georges Siddiqi

{"title":"Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance","authors":"Ken A. Nagamatsu, S. Afroz, Shalini Gupta, S. Wanis, J. Hartman, E. Stewart, P. Shea, K. Renaldo, R. Howell, Brian Novak, Annaliese Drechsler, Josephine B. Chang, D. Dawson, R. Freitag, K. Frey, Monique Farrell, Georges Siddiqi","doi":"10.1109/BCICTS45179.2019.8972728","DOIUrl":null,"url":null,"abstract":"This report describes the second generation (Gen2) of the Superlattice Castellated Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier is a new device that uses 3-dimensional device geometry to modulate a superlattice of multiple AlGaN/GaN channels. The superlattice enables extremely low source and drain resistances and high output current and power density, while the 3-dimensional, low-resistance T-gate provides good electrostatic control and high gain. The wide bandgap material system also provides a high breakdown voltage. These properties lead to a robust, high performance device for low-noise and power amplifier applications. Process improvements allow the Gen2 device to reach FT/FMAX of 76/130 GHz. At 10 GHz, noise characterization achieves a minimum NFmin of 0.699 dB and load pull measurements achieve over 70% peak Power Added Efficiency (PAE).","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

This report describes the second generation (Gen2) of the Superlattice Castellated Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier is a new device that uses 3-dimensional device geometry to modulate a superlattice of multiple AlGaN/GaN channels. The superlattice enables extremely low source and drain resistances and high output current and power density, while the 3-dimensional, low-resistance T-gate provides good electrostatic control and high gain. The wide bandgap material system also provides a high breakdown voltage. These properties lead to a robust, high performance device for low-noise and power amplifier applications. Process improvements allow the Gen2 device to reach FT/FMAX of 76/130 GHz. At 10 GHz, noise characterization achieves a minimum NFmin of 0.699 dB and load pull measurements achieve over 70% peak Power Added Efficiency (PAE).

查看原文本刊更多论文

第二代SLCFET放大器:改进FT/FMAX和噪声性能

本报告描述了第二代(Gen2)超晶格卡斯特场效应晶体管(SLCFET)放大器。SLCFET放大器是一种利用三维器件几何结构来调制多个AlGaN/GaN通道的超晶格的新型器件。超晶格可以实现极低的源极和漏极电阻以及高输出电流和功率密度，而三维低电阻t栅极提供良好的静电控制和高增益。宽禁带材料系统还提供高击穿电压。这些特性导致了一个强大的，高性能的器件，用于低噪声和功率放大器应用。工艺改进使Gen2设备达到76/130 GHz的FT/FMAX。在10 GHz时，噪声特性达到0.699 dB的最小NFmin，负载拉力测量达到70%以上的峰值功率附加效率(PAE)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

自引率

0.00%

发文量