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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE 高效ka波段(33 GHz - 36 GHz) GaN MMIC功率放大器，PAE >58.5%
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972773
M. Micovic, D. Regan, J. Wong, J. Tai, H. Sharifi
{"title":"Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE","authors":"M. Micovic, D. Regan, J. Wong, J. Tai, H. Sharifi","doi":"10.1109/BCICTS45179.2019.8972773","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972773","url":null,"abstract":"We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gain of 11.9 dB and associated output power of 24.4 dBm measured at a frequency of 34 GHz in continuous wave (CW) mode. The exceptionally high efficiency of reported MMICs is a result of outstanding device characteristics of highly scaled GaN HEMTs.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128761207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement based accurate definition of the SOA edges for SiGe HBTs 基于度量的SiGe hbt SOA边缘的精确定义
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972729
Mathieu Jaoul, D. Céli, C. Maneux, T. Zimmer
{"title":"Measurement based accurate definition of the SOA edges for SiGe HBTs","authors":"Mathieu Jaoul, D. Céli, C. Maneux, T. Zimmer","doi":"10.1109/BCICTS45179.2019.8972729","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972729","url":null,"abstract":"This paper presents a non-destructive method to characterize the SiGe HBTs (heterojunction bipolar transistors) at very high currents/voltages, close to the functional boundaries of the transistor operation. Based on this measurement, a focus is made at high currents where the snapback behavior is observed using IC/VBE measurement setup. This analysis has been carried out for different transistor geometries. The first and second snapback locus in the IC-VCB characteristic has been discussed. A comparison of the measurements with the HICUM model shows accurate simulation results close to and even beyond the second flyback locus.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123673269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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