2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第7页

InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz InP/GaAsSb DHBT功率性能，在94 GHz时具有30% a类PAE

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972718

W. Quan, A. Arabhavi, D. Marti, S. Hamzeloui, O. Ostinelli, C. Bolognesi

引用次数: 3

Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance 基于分布式栅极电阻的AlGaN/GaN HEMT可扩展小信号建模

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972776

B. Hassan, A. Cutivet, C. Rodriguez, Flavien Cozette, A. Soltani, H. Maher, F. Boone

引用次数: 2

A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics 一种用于宽带可重构电子器件的2-20 GHz SiGe振幅控制电路，具有差分信号选择性

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972716

Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, D. Denison, J. Cressler

{"title":"A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics","authors":"Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, D. Denison, J. Cressler","doi":"10.1109/BCICTS45179.2019.8972716","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972716","url":null,"abstract":"This paper presents a wideband integrated single-tap circuit for a general-purpose, high-performance transversal filter application, and which has been implemented in silicon germanium (SiGe) technology for use in direct-throughput processing of RF signals in the microwave and millimeter-wave spectrum. To provide wideband instantaneous reconfigurability and multi-function RF capability, the proposed circuit consists of a digital step attenuator, an active-based balun, a single-pole single-throw (SPDT) switch, and a digital control circuit. To achieve low noise characteristics for the receiver, a wideband low-noise amplifier (LNA) is included in the design. In addition, an active-based switchable power divider is utilized for supporting open-loop systems that provide a comparison with system set points or input signals. The proposed single-tap circuit demonstrates flat in-band gain of 14.3 dB with ±0.9 dB variation, 31.5 dB amplitude control range with 0.5 dB step, and a differential signal selectivity from 2 to 20 GHz. This single-tap circuit block is expected to enable a diverse set of tasks, including tunable RF front-end filtering, pre-linearization of signal for saturation compensation, and direct throughput matched filtering.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"179 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116705160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Highly Integrated D-Band Multi-Channel Transceiver Chip for Radar Applications 用于雷达的高集成d波段多通道收发芯片

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972781

V. Issakov, Andrea Bilato, Vera Kurz, D. Englisch, A. Geiselbrechtinger

{"title":"A Highly Integrated D-Band Multi-Channel Transceiver Chip for Radar Applications","authors":"V. Issakov, Andrea Bilato, Vera Kurz, D. Englisch, A. Geiselbrechtinger","doi":"10.1109/BCICTS45179.2019.8972781","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972781","url":null,"abstract":"This paper presents a low-power, highly-integrated D-Band transceiver chip realized in a 0.13 µm SiGe BiCMOS technology. The integration level includes three receiver (RX) channels, one transmitter (TX) channel, local oscillator (LO) signal generation and distribution network, frequency dividers and serial peripheral interface (SPI) for digital reconfigurability. The receiver achieves a peak gain of 14 dB at 118 GHz, while the transmitter achieves an output power of −6 dBm at 118 GHz. The VCO is realized in a push-push Colpitts topology. Additionally, its output is multiplied by two using a frequency doubler. Hence the transmitter output signal is continuously tunable in the frequency range 117 − 126 GHz, while achieving a measured phase noise of − 93.5 dBc /Hz at 1 MHz offset at 120 GHz. The entire transceiver draws 195 mA from a single 1.8 V supply. A single RX channel draws 19 mA, while a single TX consumes 25 mA. The circuit including pads occupies a chip area of only 3.5 mm × 2.75 mm, which is limited only by the separation necessary for isolation between the channels. The transceiver provides a competitive performance and is suitable for continuous-wave radar applications around 120 GHz.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122287150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range 太赫兹范围SiGe HBTs s参数测量异常偏转的TCAD模拟与评估

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972760

S. Panda, S. Frégonèse, A. Chakravorty, T. Zimmer

引用次数: 2

A 4.6V, 6-bit, 64GS/s Transmitter in 22nm FDSOI CMOS 一个4.6V, 6位，64GS/s的22纳米FDSOI CMOS发射器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972727

Jashva Rafique, Thelinh Nguyen, S. Voinigescu

引用次数: 1

Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ? 半导体器件和材料的热分析-为什么我不应该相信热模拟?

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972763

M. Kuball, J. Pomeroy, F. Gucmann, Bahar Oner

引用次数: 5

50 – 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT 250nm InP HBT的50- 250ghz高增益功率放大器mmic

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972777

Z. Griffith, M. Urteaga, P. Rowell, L. Tran, B. Brar

引用次数: 8

Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling GaN hemt脉冲I-V特性的静态漏极依赖性:分析与建模

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972721

S. Khandelwal, K. Kellogg, C. Hill, H. Morales, L. Dunleavy, G. Drandova, Anita Pacheco, J. Jimenez

引用次数: 4

Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach 用MVSG方法模拟GaN hemt的布局、分布和击穿效应

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972762

K. A. Aabrar, Lan Wei, U. Radhakrishna

引用次数: 1