半导体器件和材料的热分析-为什么我不应该相信热模拟?

M. Kuball, J. Pomeroy, F. Gucmann, Bahar Oner
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引用次数: 5

摘要

半导体器件温度测量具有挑战性;通常使用红外热像仪或电测量,但对于大多数当前的半导体技术来说,它们没有足够高的空间分辨率来检测亚微米大小的热点。因此,热模拟常用于预测器件的峰值温度。强调了热模拟的局限性。详细介绍了亚微米空间分辨率半导体器件温度实际测量的最新进展,包括拉曼热成像、高空间分辨率高光谱量子棒热成像、热原子力显微镜和热反射,从而能够验证热模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?
Semiconductor device temperature is challenging to measure; often IR thermography or electrical measurements are used which do not have a high enough spatial resolution for most of the current semiconductor technology to detect sub-micron size hot spots. Thermal simulation is often therefore used to predict peak device temperature. Limitations of thermal simulations are highlighted. Latest developments in the actual measurement of semiconductor device temperature with sub-micron spatial resolution including Raman Thermography, High Spatial Resolution Hyperspectral Quantum Rod Thermal Imaging, Thermal Atomic Force Microscopy, and thermoreflectance are detailed, which enable validation of thermal simulations.
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