Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, D. Denison, J. Cressler
{"title":"A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics","authors":"Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, D. Denison, J. Cressler","doi":"10.1109/BCICTS45179.2019.8972716","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband integrated single-tap circuit for a general-purpose, high-performance transversal filter application, and which has been implemented in silicon germanium (SiGe) technology for use in direct-throughput processing of RF signals in the microwave and millimeter-wave spectrum. To provide wideband instantaneous reconfigurability and multi-function RF capability, the proposed circuit consists of a digital step attenuator, an active-based balun, a single-pole single-throw (SPDT) switch, and a digital control circuit. To achieve low noise characteristics for the receiver, a wideband low-noise amplifier (LNA) is included in the design. In addition, an active-based switchable power divider is utilized for supporting open-loop systems that provide a comparison with system set points or input signals. The proposed single-tap circuit demonstrates flat in-band gain of 14.3 dB with ±0.9 dB variation, 31.5 dB amplitude control range with 0.5 dB step, and a differential signal selectivity from 2 to 20 GHz. This single-tap circuit block is expected to enable a diverse set of tasks, including tunable RF front-end filtering, pre-linearization of signal for saturation compensation, and direct throughput matched filtering.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"179 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a wideband integrated single-tap circuit for a general-purpose, high-performance transversal filter application, and which has been implemented in silicon germanium (SiGe) technology for use in direct-throughput processing of RF signals in the microwave and millimeter-wave spectrum. To provide wideband instantaneous reconfigurability and multi-function RF capability, the proposed circuit consists of a digital step attenuator, an active-based balun, a single-pole single-throw (SPDT) switch, and a digital control circuit. To achieve low noise characteristics for the receiver, a wideband low-noise amplifier (LNA) is included in the design. In addition, an active-based switchable power divider is utilized for supporting open-loop systems that provide a comparison with system set points or input signals. The proposed single-tap circuit demonstrates flat in-band gain of 14.3 dB with ±0.9 dB variation, 31.5 dB amplitude control range with 0.5 dB step, and a differential signal selectivity from 2 to 20 GHz. This single-tap circuit block is expected to enable a diverse set of tasks, including tunable RF front-end filtering, pre-linearization of signal for saturation compensation, and direct throughput matched filtering.