50 – 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT

In this paper we review the status of the state-of-the-art and our transition activities for mm-wave, D-, and G-band solid-state power amplifier (PA) MMICs developed into Teledyne Scientific’s 250-nm InP HBT technology. Key design decisions driven by the transistor gain at a given frequency and large-signal load-line are reviewed. Novel PA cell topologies are presented to show how they address the high current biasing required of the 250-nm InP HBT and permit 2× and 4× on-chip combining. PA wafer-mapping by auto-probing on a full thickness 100-mm wafer prior to finishing (thinning to 3-mil, chip singulation) permits the RF identification of known-good-die (KGD) and thus an inventory of parts can be generated. Five established 250-nm InP HBT power amplifiers are presented operating from 55-135 GHz (115-135 mW), 60-130 GHz (160-275 mW), 115-145 GHz (0.25-W @ 140-GHz), 115-185 GHz (75-115 mW), and 180-250 GHz (40-80 mW). Also, included is a novel 190-GHz low-power driver amplifier (high-gain, 100-mW PDC, 3-dBm OP1dB, 11-dBm Psat with 9.6% PAE).