50 – 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972777

Z. Griffith, M. Urteaga, P. Rowell, L. Tran, B. Brar

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引用次数: 8

Abstract

In this paper we review the status of the state-of-the-art and our transition activities for mm-wave, D-, and G-band solid-state power amplifier (PA) MMICs developed into Teledyne Scientific’s 250-nm InP HBT technology. Key design decisions driven by the transistor gain at a given frequency and large-signal load-line are reviewed. Novel PA cell topologies are presented to show how they address the high current biasing required of the 250-nm InP HBT and permit 2× and 4× on-chip combining. PA wafer-mapping by auto-probing on a full thickness 100-mm wafer prior to finishing (thinning to 3-mil, chip singulation) permits the RF identification of known-good-die (KGD) and thus an inventory of parts can be generated. Five established 250-nm InP HBT power amplifiers are presented operating from 55-135 GHz (115-135 mW), 60-130 GHz (160-275 mW), 115-145 GHz (0.25-W @ 140-GHz), 115-185 GHz (75-115 mW), and 180-250 GHz (40-80 mW). Also, included is a novel 190-GHz low-power driver amplifier (high-gain, 100-mW PDC, 3-dBm OP1dB, 11-dBm Psat with 9.6% PAE).

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250nm InP HBT的50- 250ghz高增益功率放大器mmic

在本文中，我们回顾了毫米波、D波段和g波段固态功率放大器(PA) mmic向Teledyne Scientific的250纳米InP HBT技术发展的最新状态和我们的过渡活动。讨论了在给定频率和大信号负载线上由晶体管增益驱动的关键设计决策。提出了新的PA单元拓扑结构，以展示它们如何解决250 nm InP HBT所需的高电流偏置，并允许2×和4×片上组合。在精加工前(减薄至3毫米，芯片模拟)，在全厚度100毫米晶圆上自动探测PA晶圆映射，允许对已知好模(KGD)进行射频识别，从而可以生成零件清单。五种已建立的250纳米InP HBT功率放大器工作在55-135 GHz (115-135 mW)， 60-130 GHz (160-275 mW)， 115-145 GHz (0.25 w @ 140-GHz)， 115-185 GHz (75-115 mW)和180-250 GHz (40-80 mW)。此外，还包括一个新颖的190 ghz低功率驱动放大器(高增益，100 mw PDC, 3 dbm OP1dB, 11 dbm Psat, 9.6% PAE)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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