InP/GaAsSb DHBT功率性能，在94 GHz时具有30% a类PAE

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972718

W. Quan, A. Arabhavi, D. Marti, S. Hamzeloui, O. Ostinelli, C. Bolognesi

{"title":"InP/GaAsSb DHBT功率性能，在94 GHz时具有30% a类PAE","authors":"W. Quan, A. Arabhavi, D. Marti, S. Hamzeloui, O. Ostinelli, C. Bolognesi","doi":"10.1109/BCICTS45179.2019.8972718","DOIUrl":null,"url":null,"abstract":"The present work characterizes the 94 GHz class-A large-signal load-pull performance of mm-wave InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with different emitter lengths LE. When matched for maximum power, a 10.3 dBm (1.09 mW/μm) output is realized in a 10 μm transistor with a 24.5 % power-added efficiency (PAE). When matched for maximum PAE, a 30% Class-A PAE is achieved in a 7.5 μm long device, with the simultaneous output power and power gain of 9.0 dBm and 5.9 dB. The load-pull contours exhibit a combination of good output power and high PAE for a wide range of load impedances in the vicinity of 50 Ohm. This makes InP/GaAsSb DHBTs very good candidates for power amplification well into the mm-wave range of frequencies.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz\",\"authors\":\"W. Quan, A. Arabhavi, D. Marti, S. Hamzeloui, O. Ostinelli, C. Bolognesi\",\"doi\":\"10.1109/BCICTS45179.2019.8972718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present work characterizes the 94 GHz class-A large-signal load-pull performance of mm-wave InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with different emitter lengths LE. When matched for maximum power, a 10.3 dBm (1.09 mW/μm) output is realized in a 10 μm transistor with a 24.5 % power-added efficiency (PAE). When matched for maximum PAE, a 30% Class-A PAE is achieved in a 7.5 μm long device, with the simultaneous output power and power gain of 9.0 dBm and 5.9 dB. The load-pull contours exhibit a combination of good output power and high PAE for a wide range of load impedances in the vicinity of 50 Ohm. This makes InP/GaAsSb DHBTs very good candidates for power amplification well into the mm-wave range of frequencies.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文研究了具有不同发射极长度LE的毫米波InP/GaAsSb双异质结双极晶体管(dhbt)的94 GHz a类大信号负载-拉性能。当匹配最大功率时，在10 μm晶体管中实现10.3 dBm (1.09 mW/μm)输出，功率附加效率(PAE)为24.5%。当匹配最大PAE时，7.5 μm长的器件可获得30%的a类PAE，同时输出功率和功率增益分别为9.0 dBm和5.9 dB。在50欧姆附近的大范围负载阻抗范围内，负载-拉力轮廓具有良好的输出功率和高PAE的组合。这使得InP/GaAsSb dhbt非常适合用于毫米波频率范围内的功率放大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz

The present work characterizes the 94 GHz class-A large-signal load-pull performance of mm-wave InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with different emitter lengths LE. When matched for maximum power, a 10.3 dBm (1.09 mW/μm) output is realized in a 10 μm transistor with a 24.5 % power-added efficiency (PAE). When matched for maximum PAE, a 30% Class-A PAE is achieved in a 7.5 μm long device, with the simultaneous output power and power gain of 9.0 dBm and 5.9 dB. The load-pull contours exhibit a combination of good output power and high PAE for a wide range of load impedances in the vicinity of 50 Ohm. This makes InP/GaAsSb DHBTs very good candidates for power amplification well into the mm-wave range of frequencies.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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