基于度量的SiGe hbt SOA边缘的精确定义

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972729

Mathieu Jaoul, D. Céli, C. Maneux, T. Zimmer

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引用次数: 4

摘要

本文提出了一种在非常高电流/电压下，接近晶体管工作功能边界的非破坏性方法来表征SiGe hbt(异质结双极晶体管)。基于此测量，在高电流下使用IC/VBE测量设置观察回跳行为。这种分析已经对不同的晶体管几何形状进行了。讨论了IC-VCB特性中的第一和第二回吸轨迹。与HICUM模型的比较表明，仿真结果接近甚至超过了第二反激轨迹。

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Measurement based accurate definition of the SOA edges for SiGe HBTs

This paper presents a non-destructive method to characterize the SiGe HBTs (heterojunction bipolar transistors) at very high currents/voltages, close to the functional boundaries of the transistor operation. Based on this measurement, a focus is made at high currents where the snapback behavior is observed using IC/VBE measurement setup. This analysis has been carried out for different transistor geometries. The first and second snapback locus in the IC-VCB characteristic has been discussed. A comparison of the measurements with the HICUM model shows accurate simulation results close to and even beyond the second flyback locus.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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