Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972773

M. Micovic, D. Regan, J. Wong, J. Tai, H. Sharifi

引用次数: 0

Abstract

We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gain of 11.9 dB and associated output power of 24.4 dBm measured at a frequency of 34 GHz in continuous wave (CW) mode. The exceptionally high efficiency of reported MMICs is a result of outstanding device characteristics of highly scaled GaN HEMTs.

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高效ka波段(33 GHz - 36 GHz) GaN MMIC功率放大器，PAE >58.5%

我们报道了在40nm HRL的T4A GaN MMIC工艺中开发的高效ka波段(33 GHz - 36 GHz) MMIC放大器。所报道的两级功率放大器在连续波(CW)模式下，在34 GHz频率下测量的峰值功率附加效率(PAE)为58.5%，相关增益为11.9 dB，相关输出功率为24.4 dBm。所报道的mmic的异常高效率是高尺度GaN hemt出色的器件特性的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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