A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972775

Daniel Reiter, Hao Li, H. Knapp, Jonas Kammerer, J. Fritzin, S. Majied, Badou Sene, N. Pohl

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引用次数: 2

Abstract

A 19.5 dBm power amplifier (PA) with a fine power step-size of 0.5 dB for an output power from 5 dBm to 19.5 dBm is designed and implemented in an advanced CMOS technology. This accurate power controlling is achieved by using an 8-bit digitally controlled current source and this ensures also a stable power controlling over the temperature and supply range with a 29 dB dynamic range. The implemented three-stage PA with a device stacking technique has a maximum small signal gain of 43 dB and delivers a maximum saturated output power of 19.5 dBm at 25 °C and 18.5 dBm at 125 °C. The PA core has an area of 0.053 mm2 and consumes 290 mA including all on-chip biasing circuits from a single 2.1 V power supply. To the best of authors’ knowledge, the achieved maximum output power and also the power step-size are record values in advanced bulk CMOS technologies without power combining.

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采用28纳米CMOS技术的高精度8位功率控制的19.5 dBm功率放大器，适用于汽车雷达应用

采用先进的CMOS技术设计并实现了一款输出功率为5 ~ 19.5 dBm的19.5 dBm功率放大器(PA)，其功率步长为0.5 dB。这种精确的功率控制是通过使用8位数字控制电流源实现的，这也确保了在29 dB动态范围内的温度和电源范围内的稳定功率控制。所实现的采用器件堆叠技术的三级放大器的最大小信号增益为43 dB，在25°C和125°C时的最大饱和输出功率分别为19.5 dBm和18.5 dBm。PA核心的面积为0.053 mm2，功耗为290 mA，包括来自单个2.1 V电源的所有片上偏置电路。据作者所知，实现的最大输出功率和功率步长都是先进的批量CMOS技术中没有功率组合的记录值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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