毫米波应用中fmax超过220 GHz的CE和CB SiGe HBT功率电池的失真分析

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972755

P. Sakalas, A. Mukherjee, M. Schröter

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引用次数: 4

摘要

系统研究了先进SiGe异质结双极晶体管(HBT)动力电池在共发射极CE和共基极CB结构下的高频谐波畸变(HD)。用紧凑模型分析了非线性源。分析了10、20、30、50和220 GHz的单音谐波和负载-拉力。所研究的器件在匹配条件下在高频(30 GHz时P1dB=3 dBm)下产生良好的线性度，在匹配条件下在220 GHz时显示出1.5 dB的功率增益。

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Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications

High frequency (h.f.) harmonic distortion (HD) of advanced SiGe heterojunction bipolar transistor (HBT) power-cells in common-emitter CE and commonbase CB configurations with optimized metallization interconnections between were systematically investigated. Nonlinearity sources were analyzed with a compact model. Single-tone harmonics, load-pull at 10, 20, 30, 50 and 220 GHz were analyzed. Investigated devices yielded good linearity in matched conditions at high frequencies (P1dB=3 dBm at 30 GHz) and exhibited power gain of 1.5 dB at 220 GHz in matched conditions.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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