Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972731

Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj

{"title":"Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers","authors":"Željko Osrečki, J. Žilak, M. Koričić, T. Suligoj","doi":"10.1109/BCICTS45179.2019.8972731","DOIUrl":null,"url":null,"abstract":"The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

The Horizontal Current Bipolar Transistors (HCBT) with different collector designs are characterized by load-pull measurements at 0.9, 1.8, and 2.4 GHz to find the optimum HCBT structures for RF power amplifiers. Firstly, the DC collector current is chosen for each transistor considering the maximum power gain and the Kirk effect. The collector-emitter voltage is set at a value for which the maximum collector efficiency is achieved. The HCBT with the lowest-doped n-collector provides a wideband large-signal performance due to the near-50 Ω optimal impedances, achieving output power, gain, and efficiency of 21.8 dBm, 10.8 dB, and 45.3%, respectively, at 2.4 GHz. Due to a lower knee voltage, the HCBT with the highest doped n-collector provides the highest efficiency of 22.4% for low input powers, compared to 15.4% for the lowest-doped n-collector device. Therefore, various HCBT structures can be utilized to achieve wide bandwidth and high efficiency in the low-power region.

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射频功率放大器水平电流双极晶体管(HCBT)特性分析

采用不同集电极设计的水平电流双极晶体管(HCBT)在0.9 GHz、1.8 GHz和2.4 GHz下进行了负载-拉力测量，以找到用于射频功率放大器的最佳HCBT结构。首先，考虑到最大功率增益和柯克效应，为每个晶体管选择直流集电极电流。集电极-发射极电压设为集电极效率达到最大值的值。最低掺杂n集电极的HCBT具有接近50 Ω的最佳阻抗，提供了宽带大信号性能，在2.4 GHz时的输出功率、增益和效率分别为21.8 dBm、10.8 dB和45.3%。由于膝盖电压较低，掺量最高的n集电极的HCBT在低输入功率下的效率最高，为22.4%，而掺量最低的n集电极器件的效率为15.4%。因此，可以利用各种HCBT结构在低功耗区域实现宽带宽和高效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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