{"title":"Advanced mm-Wave Power Electronics (Invited Talk)","authors":"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan","doi":"10.1109/BCICTS45179.2019.8972770","DOIUrl":null,"url":null,"abstract":"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.