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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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A 48–79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS 45纳米SOI CMOS宽带相位不变增益控制的48-79 GHz低噪声放大器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972711
Wooram Lee
{"title":"A 48–79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS","authors":"Wooram Lee","doi":"10.1109/BCICTS45179.2019.8972711","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972711","url":null,"abstract":"A 48−79 GHz low noise amplifier (LNA) with broadband phase-invariant gain control is proposed for wide-band phased array applications. The proposed IC consists of a three-stage LNA, a phase-invariant attenuator, and an output buffer. A broadband phase-invariant attenuator is implemented with a phase-compensated transmission line periodically loaded with NFETs. The proposed IC was fabricated in a 45-nm CMOS SOI process and occupies an active area of 1.1 mm2. The measured gain is 22.2 dB with 31-GHz bandwidth (49% fractional bandwidth) from 48 to 79 GHz. The measured gain tuning range is higher than 8.9 dB from 63 to 80 GHz with a phase shift variation less than 6◦. The measured noise figure (NF) is less than 4.8 dB with an average NF of 3.8 dB from 50 to 62 GHz. The measured dc power consumption is 30 mW from a 1.2-V supply.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123102948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs 一种紧凑型ka波段变压器耦合功率放大器，用于0.15um GaAs的5G
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972712
Valdrin Qunaj, P. Reynaert
{"title":"A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs","authors":"Valdrin Qunaj, P. Reynaert","doi":"10.1109/BCICTS45179.2019.8972712","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972712","url":null,"abstract":"In this paper we present the design of a compact and broadband transformer-coupled power amplifier in a 0.15μm GaAs technology. The power amplifier achieves an output power of 26.5dBm and 31% power added efficiency, 12.6dB of small signal gain with a fractional bandwidth of 40%. The amplifier enables up to 21.6dBm, 19.9dBm of average output power while amplifying a 6Gb/s, 9Gb/s 64-QAM signal respectively at 28GHz with an EVM<-25dB without any digital pre-distortion. To the author’s knowledge, this is the first time transformer-coupled matching networks are used in a GaAs power amplifier leading to very compact matching structures compared to bulky transmission line.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 6–12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAs 一种基于6-12 GHz可重构变压器的250纳米GaAs共相器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972771
Daniel N. Martin, M. Roberg, Z. Popovic, T. Barton
{"title":"A 6–12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAs","authors":"Daniel N. Martin, M. Roberg, Z. Popovic, T. Barton","doi":"10.1109/BCICTS45179.2019.8972771","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972771","url":null,"abstract":"This paper presents a frequency-reconfigurable out-phasing power combining network implemented in 250-nm GaAs. The MMIC combiner design is a broadside-coupled transformer with shunt reactance elements implemented using a transmission line with shunt switches. The sixteen switches enable reconfiguration of the impedance trajectories presented to the two input ports. For selected switch states, the combining network presents appropriate input impedance trajectories for outphasing operation over a 6 to 12 GHz range with extended operation to 14 GHz.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127608258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design Considerations for Behavioral Modeling and Pre-Distortion of Wide Bandwidth Wireless Systems 宽带无线系统行为建模与预失真的设计考虑
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972783
K. Chuang
{"title":"Design Considerations for Behavioral Modeling and Pre-Distortion of Wide Bandwidth Wireless Systems","authors":"K. Chuang","doi":"10.1109/BCICTS45179.2019.8972783","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972783","url":null,"abstract":"This work presents the challenges of processing wideband communication signals as well as analyses of signal processing techniques to improve the quality of non-linear RF transmitters. The behavioral modeling begins with optimizing input training signals, which are stimuli comprised of different frequency sinusoidal waves to model the properties of signal sources. Then, a Volterra-based pre-distorter hybrid model consisted of polynomial and dynamic deviation terms is chosen to validate the training. When model parameters extraction is performed under multi-tone stimuli, the resulting compensator is robust and maintains decent linearity performance under 100 MHz carrier aggregation traffic. For minimal computational cost, a model complexity reduction technique based on matching pursuit is applied to reduce the number of model parameters to 75 while maintaining similar performance. The methodology discussed in this paper is applicable to designing non-linear RF systems facing wideband requirements.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132289627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
BCICTS 2019 Proceedings Table of Contents BCICTS 2019会议录目录
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/bcicts45179.2019.8972739
{"title":"BCICTS 2019 Proceedings Table of Contents","authors":"","doi":"10.1109/bcicts45179.2019.8972739","DOIUrl":"https://doi.org/10.1109/bcicts45179.2019.8972739","url":null,"abstract":"","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132620362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs 用于毫米波低噪声InP hemt的新型GaInAs/InAs/InP复合通道
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972710
D. C. Ruiz, Tamara Saranovac, D. Han, O. Ostinelli, C. Bolognesi
{"title":"New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs","authors":"D. C. Ruiz, Tamara Saranovac, D. Han, O. Ostinelli, C. Bolognesi","doi":"10.1109/BCICTS45179.2019.8972710","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972710","url":null,"abstract":"InP-based HEMTs with composite GaInAs/InAs channels are recognized for their high frequency performance thanks to their superior carrier transport properties. On the other hand, the addition of an InP subchannel to a GaInAs channel can effectively suppress channel impact ionization, lower the output conductance, and improve noise properties. Although the literature provides a number of reports about both separate approaches, we merge both strategies in the present study and report the first GaInAs/InAs/InP composite channel HEMTs. The influence of the InAs inset location is studied through DC, RF and noise characterization. Devices with the InAs inset located further from the top AlInAs barrier exhibit an improved minimum noise figure NFMIN due to a reduced gate leakage current. The NFMIN improvement is accompanied by a slight degradation in both the output characteristics and cutoff frequencies resulting from the increased average gate-to-2DEG separation. Our results indicate that the combination of an InAs inset and an InP subchannel opens promising HEMT design avenues for broadband low-noise applications.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128702603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 114-126 GHz Frequency Quintupler with >36 dBc Harmonic Rejection in 0.13 μm SiGe BiCMOS 一种0.13 μm SiGe BiCMOS中具有>36 dBc谐波抑制的114-126 GHz频率五倍器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972769
Andrea Bilato, V. Issakov, A. Bevilacqua
{"title":"A 114-126 GHz Frequency Quintupler with >36 dBc Harmonic Rejection in 0.13 μm SiGe BiCMOS","authors":"Andrea Bilato, V. Issakov, A. Bevilacqua","doi":"10.1109/BCICTS45179.2019.8972769","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972769","url":null,"abstract":"This work presents a D-band frequency multiplier by five that shows a harmonic rejection higher than 36 dBc, while consuming only 59 mW from a 1.8 V supply. The fifth harmonic of the 24 GHz input signal is generated by a differential pair driven in hard switching, loaded by a fourth order passive network that filters out the undesired current harmonics. The signal is further amplified by tuned cascode stages to deliver a peak output power of -3.8 dBm. The multiplier is implemented in a 0.13 μm SiGe BiCMOS technology and operates over the 114 to 126 GHz frequency range while occupying a 0.93 × 0.93mm2 silicon area.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133326782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe 有源单端差分转换器(Balun)，用于130 nm SiGe中高达70 GHz的直流
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972713
Paul Stärke, V. Riess, C. Carta, F. Ellinger
{"title":"Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe","authors":"Paul Stärke, V. Riess, C. Carta, F. Ellinger","doi":"10.1109/BCICTS45179.2019.8972713","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972713","url":null,"abstract":"This work presents an integrated active single-ended to differential converter (balun) for mm-wave applications. The design is based on a differential amplifier chain, which is excited single-endedly. The general lower common-mode rejection at higher frequencies is compensated to improve the performance. The circuit offers a bandwidth from dc to more than 70 GHz with a differential conversion gain of 3.6 dB. The balance in amplitude and phase is better than 0.2 dB and 5°, while the group delay variation stays below 2 ps. The balun is optimized for a high linearity with low signal distortion. The differential output-referred 1-dB compression point occurs around 0.8 dBm at 10 GHz and −0.1 dBm at 60 GHz and the maximum output swing is 900 mV peak-peak. The final chip occupies an area of 0.42 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is the handling of analog data streams, with symbol rates up to 100 GBd/s, occurring in ultra-wideband communication systems. Here it offers, compared to the state-of-the-art, the best amplitude and phase balance with one of the highest reported bandwidths.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123495764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 17 GHz All-npn Push-Pull Class-C VCO 一个17ghz全npn推挽c类压控振荡器
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972738
S. Veni, M. Caruso, M. Tiebout, A. Bevilacqua
{"title":"A 17 GHz All-npn Push-Pull Class-C VCO","authors":"S. Veni, M. Caruso, M. Tiebout, A. Bevilacqua","doi":"10.1109/BCICTS45179.2019.8972738","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972738","url":null,"abstract":"A SiGe BiCMOS push-pull class-C VCO operating at 17 GHz and making use of only npn transistors is presented. A magnetic transformer is used to set positive feedback around a common-collector differential pair and implement the push-pull operation. This allows to halve the bias current for a given amplitude of oscillation, while using just one type of active devices. The oscillator features a phase noise as low as -116 dBc/Hz at 1 MHz offset, while drawing 13.7 mA from the 3.3 V supply. The tuning range is 15%.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124891081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of 10/20/40 GHz Quadrature VCOs for W-band FMCW Radar Systems in 90nm SiGe BiCMOS Technology 采用90nm SiGe BiCMOS技术的w波段FMCW雷达系统10/20/40 GHz正交vco比较
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972723
Weihu Wang, B. Floyd
{"title":"Comparison of 10/20/40 GHz Quadrature VCOs for W-band FMCW Radar Systems in 90nm SiGe BiCMOS Technology","authors":"Weihu Wang, B. Floyd","doi":"10.1109/BCICTS45179.2019.8972723","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972723","url":null,"abstract":"This paper presents and compares quadrature voltage-controlled oscillators (QVCOs) operating at 10, 20, and 40 GHz for use within W-band frequency-modulated continuous wave (FMCW) radar systems. The same circuit topology and a 90nm SiGe BiCMOS 9HP technology are used for each band. The QVCO employs Colpitts oscillators which are capacitively coupled in a ring structure. This passive coupling results in improved phase noise compared to active injection techniques. Each differential Colpitts subcircuit uses an AC-shorted transformer-coupled varactor structure to allow for wide continuous tuning range with low phase noise. Estimated quality factors of the tanks are 16/11/6 for the 10/20/40 GHz VCOs, where the higher Q is achieved through careful optimization of the transformer (with Q of ~35 for each band) and varactor structures. Our results show that the 10/20/40-GHz QVCOs achieve phase noises at 1-MHz offset of -122/-114/-105 dBc/Hz, continuous tuning ranges of 14%/10%/4%, and figures-of-merit of -181/-179/-174 dBc/Hz, respectively. After multiplication to 80 GHz, phase noises would be -104/-102/-98 dBc/Hz, respectively, indicating that the lower frequency design is preferable for the FMCW radar system, provided that high-performance multipliers are available. Keywords—Voltage-controlled oscillators, quadrature VCO, SiGe, BiCMOS, technology benchmarking, FMCW radar.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127468760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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