2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第5页

140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations 带有源偏置终端的140GHz SiGe HBT和100GHz InP DHBT宽带三堆叠分布式放大器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972768

K. Kobayashi, Ying Z. McCleary

{"title":"140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations","authors":"K. Kobayashi, Ying Z. McCleary","doi":"10.1109/BCICTS45179.2019.8972768","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972768","url":null,"abstract":"This paper reports on the design and linearity performance characteristics of a DC-140GHz SiGe and a DC- 100GHz InP triple stacked HBT distributed amplifier with active bias terminations. The active bias topology is configured to extend the practical low frequency operation while maintaining gain- flatness and linearity. Triple stacked HBTs are used to increase the supply and linear output capability. The SiGe design is based on HBTs with an fT/fmax of 300/350GHz and achieves 11.7 dB and bandwidth from baseband to 140GHz. The InP HBT amplifier is based on DHBTs with fT/fmax of 250/250GHz and achieves a gain of 10.8dB and a bandwidth of 100GHz. While the SiGe design achieves 1.5 higher gain-BW, the InP DHBT MMIC achieves ~3- 4.5dB greater IP3, P1dB, and P3dB while consuming only ~ 23% higher dc power. This is believed to be the first broadband linearity benchmark comparison reported between SiGe and InP HBT technologies using near identical DA designs. Although there are previous reports of larger bandwidth distributed amplifiers in both InP and SiGe technologies demonstrated up through 200GHz and summarized in [8], the InP and SiGe MMICs of this work are believe to be the highest bandwidths reported for triple stacked HBT DAs using practical on-chip active bias terminations.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129906145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation 利用低频s参数测量和TCAD仿真研究带缓冲陷阱的GaN hemt自热效应

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972751

Tomohiro Otsuka, Y. Yamaguchi, S. Shinjo, T. Oishi

引用次数: 1

82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency 采用双平衡吉尔伯特单元的82 GHz直接上变频混频器，在毫米波频率下进行灵敏度分析

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972765

A. Omar, A. Mukherjee, W. Liang, Yaxin Zhang, P. Sakalas, M. Schröter

引用次数: 2

Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal Devices 用于电子、光电和热器件的超快速热反射成像

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972732

J. Bahk, A. Shakouri

{"title":"Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal Devices","authors":"J. Bahk, A. Shakouri","doi":"10.1109/BCICTS45179.2019.8972732","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972732","url":null,"abstract":"We review the recent advances in thermal characterization of micro/nanoscale electronic, optoelectronic, thermal devices based on thermoreflectance imaging. Thermoreflectance imaging is a non-invasive optical technique that can visualize surface thermal response of devices and integrated circuits (IC). Recent advances of the technique have enabled high-resolution, ultra-fast transient thermal imaging with 800 ps temporal resolution. Using visible or UV illumination, spatial resolution of about 200-250 nm can be achieved. Many IC substrates, e.g. Si, GaAs, are transparent to near IR illumination in 1-1.5 μm wavelength range. Through-substrate thermal imaging of flip-chip bonded ICs with micron spatial resolution has been demonstrated. We provide key examples of various devices characterized by the technique such as CMOS ICs, GaN HEMT, nanowire transistors, thin-film solar cells, and micro-thermal cloaking devices. In addition to the validation of electrothermal models, material and fabrication defects can be identified. Finally we discuss the advantages/limitations, and perspective of thermoreflectance imaging technique.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126855487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter InGaAs-OI无源器件的实现及其在5G毫米波移相器中的应用

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972758

Pilsoon Choi, Annie Kumar, S. Yadav, X. Gong, D. Antoniadis, E. Fitzgerald

引用次数: 1

Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction 基于接枝GaAs-Diamond n-p结的金刚石-集电极异质结双极晶体管的研究

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972766

Dong Liu, J. Papapolymerou, P. Mohseni, M. Becker, Jung‐Hun Seo, J. Albrecht, T. Grotjohn, Z. Ma, S. Cho, A. Hardy, Jisoo Kim, Cristian J. Herrera-Rodriguez, Edward Swinnich, Mohadeseh A. Baboli, Jiarui Gong, Xenofon Konstantinou

引用次数: 1

A Scalable Multimode 24-GHz Radar Transceiver for Industrial and Consumer Applications in a 0.13µm SiGe BiCMOS Technology 适用于工业和消费类应用的可扩展多模24ghz雷达收发器，采用0.13 μ m SiGe BiCMOS技术

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972767

A. Chakraborty, M. Hamouda, Yi-jue Chen, Claus Lautenschlager, D. Englisch, M. Qureshi, N. Huynh, Klaus Hoenninger, H. Forstner

{"title":"A Scalable Multimode 24-GHz Radar Transceiver for Industrial and Consumer Applications in a 0.13µm SiGe BiCMOS Technology","authors":"A. Chakraborty, M. Hamouda, Yi-jue Chen, Claus Lautenschlager, D. Englisch, M. Qureshi, N. Huynh, Klaus Hoenninger, H. Forstner","doi":"10.1109/BCICTS45179.2019.8972767","DOIUrl":"https://doi.org/10.1109/BCICTS45179.2019.8972767","url":null,"abstract":"This paper presents a 24-GHz radar system based on a low-power, low-noise, multichannel, scalable transceiver (TRX) monolithic microwave integrated circuit (MMIC). The MMIC features two homodyne quadrature downconversion receivers with a single-sideband noise figure (NFssb) of 8 dB and an adjustable conversion gain (CG) of up to 87dB using integrated programmable analog baseband (ABB) amplifiers. Integrated baseband bypass feature allows using the same MMIC for Doppler as well as Frequency-Modulated Continuous-Wave (FMCW) radar applications. The transmit section features a fundamental frequency voltage controlled oscillator (VCO) and two transmitters with bidirectional RF ports. The transmitter delivers a maximum output power of +5 dBm. The measured phase noise at 100kHz offset was -90 dBc/Hz. Designed in a production ready 0.13µm SiGe:C BiCMOS technology, the chip consumes 165 mA from a 1.5V power supply with all blocks turned ON and consumes less than 100µA in the standby mode.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129451124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A DC-51.5 GHz Electro-Absorption Modulator Driver with Tunable Differential DC Coupling for 3D Wafer Scale Packaging 一种用于3D晶圆级封装的DC-51.5 GHz可调差分直流耦合电吸收调制器驱动器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972717

Xi Zhang, Xiao Liu, M. Spiegelberg, A. R. van Dommele, M. Matters-Kammerer

引用次数: 2

D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System 基于70纳米GaAs-mHEMT技术的FDD系统d波段收发器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972754

M. Ito, T. Okawa, T. Marumoto

引用次数: 9

Device Architectures for High-speed SiGe HBTs 高速SiGe hbt的设备体系结构

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI: 10.1109/BCICTS45179.2019.8972757

H. Rücker, B. Heinemann

引用次数: 22