一种用于3D晶圆级封装的DC-51.5 GHz可调差分直流耦合电吸收调制器驱动器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972717

Xi Zhang, Xiao Liu, M. Spiegelberg, A. R. van Dommele, M. Matters-Kammerer

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引用次数: 2

摘要

提出了一种采用0.25µm SiGe:C BiCMOS技术实现的DC-51.5 GHz PAM-4双通道电吸收调制器(EAM)驱动器。EAM驱动器专为3D晶圆级封装而设计，集成了硅电子IC和InP光子IC在晶圆级。提出了一种新的非对称负载差分驱动器拓扑，实现了EAM的可调直流偏置，而无需额外的片外偏置t，从而显着降低了封装复杂性和成本。此外，驱动器使用差分输出来驱动单端EAM，这将电压摆幅降低了两倍，并降低了功耗。该驱动器具有9.4 dB增益，3db带宽为51.5 GHz，输出直流偏置范围为- 0.2 ~ - 2 V可调。它在56 Gb/s PAM-4下提供2 Vppd的差分输出电压摆幅，每通道消耗219 mW，从而获得3.9 pJ/bit的性能值。

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A DC-51.5 GHz Electro-Absorption Modulator Driver with Tunable Differential DC Coupling for 3D Wafer Scale Packaging

This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-µm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and −0.2 ~ −2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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