D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System

Abstract

This paper presents a D-band transceiver utilizing a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) technology for a frequency division duplex (FDD) system. The transceiver includes a duplexer, transmitter and receiver modules, an LO and IF circuit board, and a real-time modem. Each module comprises a silica-based package on which D-band converter and E-band multiplier monolithic microwave integrated circuits (MMICs) are mounted using a flip-chip bonding technique. Real-time communication tests are performed at 142- and 157-GHz duplex frequencies. A 10-Gbps transmission with a high spectral efficiency are achieved using a 128 quadrature amplitude modulation (QAM) signal.