基于70纳米GaAs-mHEMT技术的FDD系统d波段收发器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972754

M. Ito, T. Okawa, T. Marumoto

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引用次数: 9

摘要

本文提出了一种采用70 nm砷化镓变质高电子迁移率晶体管(mHEMT)技术的d波段收发器，用于分频双工(FDD)系统。收发器包括双工器、发送器和接收器模块、LO和IF电路板以及实时调制解调器。每个模块包括一个基于硅的封装，其中d波段转换器和e波段倍增器单片微波集成电路(mmic)使用倒装芯片键合技术安装。实时通信测试在142 ghz和157 ghz双工频率下进行。采用128正交调幅(QAM)信号，实现了10gbps的高频谱效率传输。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System

This paper presents a D-band transceiver utilizing a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) technology for a frequency division duplex (FDD) system. The transceiver includes a duplexer, transmitter and receiver modules, an LO and IF circuit board, and a real-time modem. Each module comprises a silica-based package on which D-band converter and E-band multiplier monolithic microwave integrated circuits (MMICs) are mounted using a flip-chip bonding technique. Real-time communication tests are performed at 142- and 157-GHz duplex frequencies. A 10-Gbps transmission with a high spectral efficiency are achieved using a 128 quadrature amplitude modulation (QAM) signal.

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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