A. Omar, A. Mukherjee, W. Liang, Yaxin Zhang, P. Sakalas, M. Schröter
{"title":"采用双平衡吉尔伯特单元的82 GHz直接上变频混频器,在毫米波频率下进行灵敏度分析","authors":"A. Omar, A. Mukherjee, W. Liang, Yaxin Zhang, P. Sakalas, M. Schröter","doi":"10.1109/BCICTS45179.2019.8972765","DOIUrl":null,"url":null,"abstract":"This paper presents a 82 GHz direct up-converter mixer fabricated in a 130 nm SiGe BiCMOS technology as a part of a complete 82 GHz transmitter operating at mm-wave frequency. The mixer is based on a double-balanced Gilbert cell topology. Two broadband baluns are employed to differentiate the single-ended input signals of the mixer: one on-chip balun operates at 82 GHz at the LO port, and one off-chip balun at the IF port operates at 0.5 GHz. With 2.2 V supply voltage, −5 dBm local oscillator pumping power, and −30 dBm IF power, the measured mixer achieves a double-sideband conversion gain of 9 dB over the RF frequency range from 76 to 84 GHz, consuming just 23 mW static DC power (including output buffer). Isolation between LO-RF signals and IF-RF signals at the RF output port is larger than 34 dB and 52 dB, respectively. The sensitivity of the relevant circuit figures of merit with respect to important transistor parameters has also been investigated.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency\",\"authors\":\"A. Omar, A. Mukherjee, W. Liang, Yaxin Zhang, P. Sakalas, M. Schröter\",\"doi\":\"10.1109/BCICTS45179.2019.8972765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 82 GHz direct up-converter mixer fabricated in a 130 nm SiGe BiCMOS technology as a part of a complete 82 GHz transmitter operating at mm-wave frequency. The mixer is based on a double-balanced Gilbert cell topology. Two broadband baluns are employed to differentiate the single-ended input signals of the mixer: one on-chip balun operates at 82 GHz at the LO port, and one off-chip balun at the IF port operates at 0.5 GHz. With 2.2 V supply voltage, −5 dBm local oscillator pumping power, and −30 dBm IF power, the measured mixer achieves a double-sideband conversion gain of 9 dB over the RF frequency range from 76 to 84 GHz, consuming just 23 mW static DC power (including output buffer). Isolation between LO-RF signals and IF-RF signals at the RF output port is larger than 34 dB and 52 dB, respectively. The sensitivity of the relevant circuit figures of merit with respect to important transistor parameters has also been investigated.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency
This paper presents a 82 GHz direct up-converter mixer fabricated in a 130 nm SiGe BiCMOS technology as a part of a complete 82 GHz transmitter operating at mm-wave frequency. The mixer is based on a double-balanced Gilbert cell topology. Two broadband baluns are employed to differentiate the single-ended input signals of the mixer: one on-chip balun operates at 82 GHz at the LO port, and one off-chip balun at the IF port operates at 0.5 GHz. With 2.2 V supply voltage, −5 dBm local oscillator pumping power, and −30 dBm IF power, the measured mixer achieves a double-sideband conversion gain of 9 dB over the RF frequency range from 76 to 84 GHz, consuming just 23 mW static DC power (including output buffer). Isolation between LO-RF signals and IF-RF signals at the RF output port is larger than 34 dB and 52 dB, respectively. The sensitivity of the relevant circuit figures of merit with respect to important transistor parameters has also been investigated.