Device Architectures for High-speed SiGe HBTs

Abstract

This paper reviews recent developments in process technology of high-speed SiGe HBTs at IHP. Two device concepts, one with selective epitaxial growth and one with non-selective epitaxial growth of the base, are analyzed with respect to their impact on radio frequency performance. Both device architectures take advantage of a low-resistive base link formed by selective epitaxial growth of extrinsic base regions after emitter structuring. As an intermediate result of the European project TARANTO, HBTs with fT values of 470 GHz and fMAX values of 610 GHz are demonstrated in a 130 nm BiCMOS process.