Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter

In this work, inductors and capacitors are designed and fabricated on an InGaAs-on-Insulator (InGaAs-OI) wafer that enables millimeter-wave (mmWave) integrated circuits design together with InGaAs high electron mobility transistors (HEMTs) for 5G mobile devices. Wafer bonding process between an InGaAs wafer and a high resistive substrate is developed and optimized for high frequency operation. Fabricated passive components are measured and compared against the electro-magnetic (EM) simulation data. A phase shifter circuit which is essential for directional beamforming in 5G mmWave communications is designed based on the measured data, which demonstrates the feasibility of integrated mmWave circuits design on an InGaAs-OI wafer for high data rates and small form factor 5G mobile devices.