{"title":"有源单端差分转换器(Balun),用于130 nm SiGe中高达70 GHz的直流","authors":"Paul Stärke, V. Riess, C. Carta, F. Ellinger","doi":"10.1109/BCICTS45179.2019.8972713","DOIUrl":null,"url":null,"abstract":"This work presents an integrated active single-ended to differential converter (balun) for mm-wave applications. The design is based on a differential amplifier chain, which is excited single-endedly. The general lower common-mode rejection at higher frequencies is compensated to improve the performance. The circuit offers a bandwidth from dc to more than 70 GHz with a differential conversion gain of 3.6 dB. The balance in amplitude and phase is better than 0.2 dB and 5°, while the group delay variation stays below 2 ps. The balun is optimized for a high linearity with low signal distortion. The differential output-referred 1-dB compression point occurs around 0.8 dBm at 10 GHz and −0.1 dBm at 60 GHz and the maximum output swing is 900 mV peak-peak. The final chip occupies an area of 0.42 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is the handling of analog data streams, with symbol rates up to 100 GBd/s, occurring in ultra-wideband communication systems. Here it offers, compared to the state-of-the-art, the best amplitude and phase balance with one of the highest reported bandwidths.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe\",\"authors\":\"Paul Stärke, V. Riess, C. Carta, F. Ellinger\",\"doi\":\"10.1109/BCICTS45179.2019.8972713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an integrated active single-ended to differential converter (balun) for mm-wave applications. The design is based on a differential amplifier chain, which is excited single-endedly. The general lower common-mode rejection at higher frequencies is compensated to improve the performance. The circuit offers a bandwidth from dc to more than 70 GHz with a differential conversion gain of 3.6 dB. The balance in amplitude and phase is better than 0.2 dB and 5°, while the group delay variation stays below 2 ps. The balun is optimized for a high linearity with low signal distortion. The differential output-referred 1-dB compression point occurs around 0.8 dBm at 10 GHz and −0.1 dBm at 60 GHz and the maximum output swing is 900 mV peak-peak. The final chip occupies an area of 0.42 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is the handling of analog data streams, with symbol rates up to 100 GBd/s, occurring in ultra-wideband communication systems. Here it offers, compared to the state-of-the-art, the best amplitude and phase balance with one of the highest reported bandwidths.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe
This work presents an integrated active single-ended to differential converter (balun) for mm-wave applications. The design is based on a differential amplifier chain, which is excited single-endedly. The general lower common-mode rejection at higher frequencies is compensated to improve the performance. The circuit offers a bandwidth from dc to more than 70 GHz with a differential conversion gain of 3.6 dB. The balance in amplitude and phase is better than 0.2 dB and 5°, while the group delay variation stays below 2 ps. The balun is optimized for a high linearity with low signal distortion. The differential output-referred 1-dB compression point occurs around 0.8 dBm at 10 GHz and −0.1 dBm at 60 GHz and the maximum output swing is 900 mV peak-peak. The final chip occupies an area of 0.42 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is the handling of analog data streams, with symbol rates up to 100 GBd/s, occurring in ultra-wideband communication systems. Here it offers, compared to the state-of-the-art, the best amplitude and phase balance with one of the highest reported bandwidths.