Kull脱毛层公式在结二极管紧凑模型中的应用

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972733

A. DiVergilio

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引用次数: 1

摘要

本文介绍了电导率调制的Kull-Nagel脱毛层公式在结二极管紧凑模型中的应用。这种增强可以提高串联电阻的偏置依赖性建模的准确性，串联电阻是射频和开关应用中使用的二极管的关键性能数字。该模型在Verilog-A中实现，作为早期工作[1]中提出的3端电热二极管模型的扩展。硬件验证结果证明了90nm SiGe BiCMOS技术具有集成PIN二极管。

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Application of the Kull epilayer formulation to a compact model for junction diodes

This paper presents an application of the Kull-Nagel epilayer formulation for conductivity modulation to a compact model for junction diodes. This enhancement allows for improved accuracy in modeling the bias-dependence of the series resistance, a critical figure of merit for diodes used in RF and switching applications. The model is implemented in Verilog-A as an extension to the 3-terminal electrothermal diode model presented in an earlier work [1]. Hardware-verified results are demonstrated for a 90nm SiGe BiCMOS technology featuring an integrated PIN diode.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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