Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown

Abstract

This paper presents an overview of the reliability differences of devices optimized for high-performance (HP) and medium-breakdown (MB) in SiGe HBT technologies. To explore the physics of failure, a MB variant in a fourth-generation SiGe HBT technology is described from a processing standpoint to understand any subtle distinctions between its HP counterpart. Reliability stress measurement data is shown to provide insight into the differences between HP and MB SiGe HBTs when biased under high-current and mixed-mode stress conditions. TCAD simulations are presented to aid in the physical understanding of Auger generation/recombination rates, impact ionization rates, and power density across a wide range of conditions where these devices are typically biased and used.