用于28 GHz 5G应用的8瓦线性三级GaN Doherty功率放大器

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972750

D. Wohlert, B. Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler

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引用次数: 16

摘要

提出了一种采用0.15 μm GaN-on-SiC HEMT技术制作的三级ka波段Doherty功率放大器。在27至29.5 GHz的工作中，峰值功率大于8瓦，小信号增益为30 dB，输出回退为6 dB时PAE超过20%。此外，采用峰值-平均功率比为9.6 dB的400 MHz 64-QAM CP-OFDM信号测量了Doherty放大器的原始线性度。未经校正的ACPR高达-40 dBc, EVM低至2%，证明了该放大器在5G应用中的潜力。

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8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications

This paper presents a three-stage Ka-band Doherty power amplifier fabricated using 0.15 μm GaN-on-SiC HEMT technology. Peak-power greater than 8-watts, 30 dB of small-signal gain, and over 20% of PAE at 6 dB output back-off has been achieved for 27 to 29.5 GHz operation. In addition, the raw linearity of the Doherty amplifier has been measured using a 400 MHz, 64-QAM CP-OFDM signal with a 9.6 dB peak-to-average-power-ratio. Uncorrected ACPR as good as -40 dBc and EVM as low as 2% demonstrate the potential of this amplifier for 5G applications.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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