先进毫米波功率电子学(特邀讲座)

Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan
{"title":"先进毫米波功率电子学(特邀讲座)","authors":"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan","doi":"10.1109/BCICTS45179.2019.8972770","DOIUrl":null,"url":null,"abstract":"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advanced mm-Wave Power Electronics (Invited Talk)\",\"authors\":\"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan\",\"doi\":\"10.1109/BCICTS45179.2019.8972770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在更少拥塞的毫米波频谱范围内运行,采用更复杂的调制和多址方案,可以满足不断变化的无线数据需求。在拥挤和有争议的频谱和空间环境中合作所需的日益增长的复杂性和信号带宽要求毫米波频率的高效线性电力电子设备。为了满足这些需求,DARPA动态范围增强电子和材料(DREaM)项目正在通过结合外延材料、器件结构和/或制造工艺的创新,开发先进的高功率和高动态范围晶体管技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced mm-Wave Power Electronics (Invited Talk)
The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.
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