{"title":"先进毫米波功率电子学(特邀讲座)","authors":"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan","doi":"10.1109/BCICTS45179.2019.8972770","DOIUrl":null,"url":null,"abstract":"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advanced mm-Wave Power Electronics (Invited Talk)\",\"authors\":\"Young-Kai Chen, Tsu-Hsi Chang, A. Sivananthan\",\"doi\":\"10.1109/BCICTS45179.2019.8972770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The ceaseless demand of wireless data can be satisfied by operating in the less congested millimeter-wave frequency spectrum regime with more complexed modulation and multiple access schemes. The growing complexity and signal bandwidth required to co-operate in a crowded and contested spectral and spatial environment demands highly efficient and linear power electronics at millimeter-wave frequencies. To meet these needs, the DARPA Dynamic Range-enhanced Electronics and Materials (DREaM) program is developing advanced high power and high dynamic range transistor technology by combining innovations in epitaxial materials, device structures, and/or fabrication processes.