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2011 International Reliability Physics Symposium最新文献

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A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests 从加速试验中预测高稳定非晶硅薄膜晶体管寿命的新方法
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784463
T. Liu, S. Wagner, J. Sturm
{"title":"A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests","authors":"T. Liu, S. Wagner, J. Sturm","doi":"10.1109/IRPS.2011.5784463","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784463","url":null,"abstract":"We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121814919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Analysis of multiple cell upsets due to neutrons in SRAMs for a Deep-N-well process 深n阱过程中sram中中子引起的多单元扰动分析
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784599
N. Mahatme, B. Bhuva, Y. Fang, A. Oates
{"title":"Analysis of multiple cell upsets due to neutrons in SRAMs for a Deep-N-well process","authors":"N. Mahatme, B. Bhuva, Y. Fang, A. Oates","doi":"10.1109/IRPS.2011.5784599","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784599","url":null,"abstract":"This work accounts for the single-bit and multiple-cell upset phenomena due to neutron strikes in highly scaled SRAMs implemented in a Deep-N-well process. 3D TCAD simulations are used to explain test results, upset mechanisms and implications for ECC.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116603228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Electrical reliabilities of porous silica low-k films 多孔二氧化硅低钾薄膜的电气可靠性
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784465
T. Kikkawa, Y. Kayaba, K. Kohmura, S. Chikaki
{"title":"Electrical reliabilities of porous silica low-k films","authors":"T. Kikkawa, Y. Kayaba, K. Kohmura, S. Chikaki","doi":"10.1109/IRPS.2011.5784465","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784465","url":null,"abstract":"Electrical reliability of self-assembled porous silica films was investigated. Vapor phase silylation by use of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) was developed to reduce silanol groups and enhance siloxane cross-linkage, resulting in achieving lower dielectric constant and higher elastic modulus. To promote siloxane cross-linkage, Cs ion was doped to its precursor solution. The self-assembled porous silica low-k film was integrated in Cu damascene interconnects with ultraviolet (UV) irradiation and TMCTS vapor treatment, resulting in the highest elastic modulus of 9 GPa with the dielectric constant of 2.1. Sidewall protection layer was formed in the trench for Cu interconnects to improve time-dependent dielectric breakdown (TDDB) lifetime of more than 10 years at the electric field of 2.3 MV/cm.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115518355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Degradation and failure analysis of Polysilicon Resistor connecting with Tungsten contact and Copper line 钨触点与铜线连接多晶硅电阻的退化与失效分析
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784568
Clement Huang, M. Lin, James W. Liang, A. Juan, K. Su
{"title":"Degradation and failure analysis of Polysilicon Resistor connecting with Tungsten contact and Copper line","authors":"Clement Huang, M. Lin, James W. Liang, A. Juan, K. Su","doi":"10.1109/IRPS.2011.5784568","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784568","url":null,"abstract":"The failure mechanism was studied on Polysilicon Resistor - Tungsten contact - Copper line structures. Silicide resistor could fail at high resistive interface of poly/silicide/barrier/metal because thermal mismatching for varied materials. In the case of Silicide_Block resistor, damage nearby the contact proximity (especially at Cu region) was observed, which originated from local Joule heating at the interface. Finite element analysis (FEA) was demonstrated that failure was dependent on current density and Joule heat generation.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123698881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A holistic approach to process co-optimization for through-silicon via 硅通孔工艺协同优化的整体方法
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784529
S. Ramaswami
{"title":"A holistic approach to process co-optimization for through-silicon via","authors":"S. Ramaswami","doi":"10.1109/IRPS.2011.5784529","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784529","url":null,"abstract":"As through-silicon via (TSV) technology transitions from development to production, several opportunities exist to co-optimize processes to ensure a wide process window while meeting cost targets and manufacturing robustness. Trade-offs in the via middle, via reveal, and via last integration schemes involving etch, CVD, PVD, ECD, CMP, and wafer support systems (carrier wafers) are addressed.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115418161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Isolating light-sensitive defects using C-AFM 利用C-AFM分离光敏缺陷
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784528
H. Lin, M. Wu
{"title":"Isolating light-sensitive defects using C-AFM","authors":"H. Lin, M. Wu","doi":"10.1109/IRPS.2011.5784528","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784528","url":null,"abstract":"A soft failure, which is recoverable and sensitive to certain stresses, such as voltage, temperature and light, is defined as a failure, fault, defect, or error that results in a shift in the operating margin of a device. Several studies have been conducted into voltage or temperature dependent failures [1–3]. Research into light sensitive failures, however, has seldom been reported, as it is more difficult to isolate defects which are sensitive to light. Although certain global fault isolation techniques, such as photoelectric laser stimulation (PLS) have been developed to localize a wide range of potentially light sensitive defects, by means of the perturbation of the integrated circuit (IC) properties through carrier generation in the silicon, PLS cannot perform an exact failure localization on a single transistor or junction because of limited spatial resolution. This paper describes the use of a conductive atomic force microscope (C-AFM) within the failure analysis (FA) flow as a local fault isolation method in order to generate a more reliable failure hypothesis and successful physical root cause visualization for light-sensitive defects, and, using this technique, such failures, which pose potential reliability issues for devices as the affected circuit degrades over time or under stress, can be easily screened before any quality assurance test.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115485129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the cyclic threshold voltage shift of dynamic negative-bias temperature instability 动态负偏置温度不稳定性的循环阈值电压移
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784611
Z. Teo, A. A. Boo, D. Ang, K. Leong
{"title":"On the cyclic threshold voltage shift of dynamic negative-bias temperature instability","authors":"Z. Teo, A. A. Boo, D. Ang, K. Leong","doi":"10.1109/IRPS.2011.5784611","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784611","url":null,"abstract":"Based on new experimental evidence for the cyclical threshold voltage shift (ΔVt) under dynamic NBTI and a recent ab-initio study on the oxygen vacancy defects (hole traps) in the SiO2, an improved physical hole-trapping model for dynamic NBTI involving the Eδ∲ center is proposed. This model stipulates that the hole-trap precursor (i.e. the Si-Si dimer) responsible for the cyclic ΔVt only undergoes marginal structural relaxation under typical NBTI stress condition, such that the Si-Si bond is completely re-formed when the stress is terminated. This framework is subtly different from an existing one based on the earlier HDL model. The latter assumes that the switching hole traps are oxygen vacancy defects that have undergone significant structural relaxation and that the switching behavior is due to the repetitive transitions between the positively charged state and the charge-compensated state. Experimental results obtained from higher oxide-field stressing in fact do not support this proposition.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122552846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Reliability limitations to the scaling of porous low-k dielectrics 多孔低k介电体结垢的可靠性限制
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784469
Shou-Chung Lee, A. Oates
{"title":"Reliability limitations to the scaling of porous low-k dielectrics","authors":"Shou-Chung Lee, A. Oates","doi":"10.1109/IRPS.2011.5784469","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784469","url":null,"abstract":"We show that processes used to fabricate advanced porous dielectrics can exhibit reliability approaching the intrinsic capability of the material. Combining this with simulations of failure distributions as a function of porosity and line edge roughness we demonstrate that failure times due to electrical breakdown rapidly decrease below k=2.3. The rapid failure time decrease is due to the statistical nature of increasing porosity (decreasing k), which leads to a shortening of the percolation path for dielectric breakdown. Continued scaling will require greater understanding of the breakdown impact on circuits as well as materials innovations to improve robustness.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122842895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Hot hole induced damage in 1T-FBRAM on bulk FinFET 体FinFET上1T-FBRAM的热孔损伤
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784459
M. Aoulaiche, N. Collaert, A. Mercha, M. Rakowski, B. de Wachter, G. Groeseneken, L. Altimime, M. Jurczak, Z. Lu
{"title":"Hot hole induced damage in 1T-FBRAM on bulk FinFET","authors":"M. Aoulaiche, N. Collaert, A. Mercha, M. Rakowski, B. de Wachter, G. Groeseneken, L. Altimime, M. Jurczak, Z. Lu","doi":"10.1109/IRPS.2011.5784459","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784459","url":null,"abstract":"The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance. Moreover, this degradation is enhanced for shorter channel devices and narrower fin widths, which would be a limitation for the scaling of floating body RAM.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123717465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements 从动态NBTI测量中同时提取阈值电压和迁移率退化
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784607
R. Herfst, J. Schmitz, A. Scholten
{"title":"Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements","authors":"R. Herfst, J. Schmitz, A. Scholten","doi":"10.1109/IRPS.2011.5784607","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784607","url":null,"abstract":"Conventional on-the-fly characterization of NBTI translates measured changes in drain current to a threshold voltage shift only. In this paper, we show how to extend this method to the simultaneous determination of threshold voltage and zero-field-mobility degradation by. This is achieved by using a Vector Network Analyzer for OTF characterization of gds and gm. For the technology under study, we have found that degradation in the zero-field mobility is responsible for at most 10% of the drain current change. Effective mobility, on the other hand, does change as a direct consequence of the threshold-voltage shift.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125317922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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