{"title":"A holistic approach to process co-optimization for through-silicon via","authors":"S. Ramaswami","doi":"10.1109/IRPS.2011.5784529","DOIUrl":null,"url":null,"abstract":"As through-silicon via (TSV) technology transitions from development to production, several opportunities exist to co-optimize processes to ensure a wide process window while meeting cost targets and manufacturing robustness. Trade-offs in the via middle, via reveal, and via last integration schemes involving etch, CVD, PVD, ECD, CMP, and wafer support systems (carrier wafers) are addressed.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
As through-silicon via (TSV) technology transitions from development to production, several opportunities exist to co-optimize processes to ensure a wide process window while meeting cost targets and manufacturing robustness. Trade-offs in the via middle, via reveal, and via last integration schemes involving etch, CVD, PVD, ECD, CMP, and wafer support systems (carrier wafers) are addressed.