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2011 International Reliability Physics Symposium最新文献

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Electromigration of Cu interconnects under AC, pulsed-DC and DC test conditions 交流、脉冲直流和直流试验条件下铜互连的电迁移
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784570
R. Shaviv, G. Harm, Sangita Kumari, R. Keller, D. Read
{"title":"Electromigration of Cu interconnects under AC, pulsed-DC and DC test conditions","authors":"R. Shaviv, G. Harm, Sangita Kumari, R. Keller, D. Read","doi":"10.1109/IRPS.2011.5784570","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784570","url":null,"abstract":"Electromigration (EM) of a dual damascene, single-via fed test vehicle was measured using DC, AC followed by DC, and three rectangular-wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool between stress cycles.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117129457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charge diffusion in silicon nitrides: Scalability assessment of nitride based flash memory 氮化硅中的电荷扩散:氮化硅基快闪存储器的可扩展性评估
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784550
S. Baik, K. Lim, Wonsup Choi, Hyunjun Yoo, Hyunjung Shin
{"title":"Charge diffusion in silicon nitrides: Scalability assessment of nitride based flash memory","authors":"S. Baik, K. Lim, Wonsup Choi, Hyunjun Yoo, Hyunjung Shin","doi":"10.1109/IRPS.2011.5784550","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784550","url":null,"abstract":"Electron and hole diffusion coefficients of stoichiometric silicon nitride, silicon rich nitride, and silicon oxynitride were evaluated from variable temperature electrostatic force microscopy (EFM) analysis. Among them, stoichiometric silicon nitride is shown to have smallest diffusion coefficient although silicon oxynitride has the higher temperature activation energy. Scaling charge trap flash towards sub-20nm regime should be accompanied by hole dispersion management, minimization of internal electric field, and adjustment of retention specification.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127323610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
The ‘permanent’ component of NBTI: Composition and annealing NBTI的“永久”成分:组成和退火
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784543
T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P. Wagner, J. Franco, M. Nelhiebel, B. Kaczer
{"title":"The ‘permanent’ component of NBTI: Composition and annealing","authors":"T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P. Wagner, J. Franco, M. Nelhiebel, B. Kaczer","doi":"10.1109/IRPS.2011.5784543","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784543","url":null,"abstract":"A number of recent publications explain NBTI to consist of a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the permanent component of NBTI. As such, they can contribute to both the threshold voltage shift as well as to the charge pumping current. Under favorable conditions, particularly when subjected to continuous charge-pumping measurements, the permanent component can show recovery rates comparable to that of the recoverable component. We argue that this enhanced recovery is due to a recombination enhanced defect reaction mechanism. We introduce a simple extension to our switching trap model to also capture the impact of charge pumping measurements on the transition rates between the defect states.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123769271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 78
A study on the short- and long-term effects of X-ray exposure on NAND Flash memories x射线照射对NAND闪存的短期和长期影响研究
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784572
S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio, L. T. Czeppel
{"title":"A study on the short- and long-term effects of X-ray exposure on NAND Flash memories","authors":"S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, S. Beltrami, M. Bertuccio, L. T. Czeppel","doi":"10.1109/IRPS.2011.5784572","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784572","url":null,"abstract":"We investigate the effects of X-ray exposure in 41-nm single level NAND Flash memories at small doses, comparable to those used in printed circuit board inspections. We analyze both short-term effects, such as cell threshold voltage shifts during irradiation, and retention and endurance performance of devices exposed to x rays. For doses smaller than 1krad(Si), no effect is observed. At higher doses, charge loss is observed after the exposure and a modest read margin degradation is seen during hightemperature retention tests.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115566277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Reliability and performance characterization of a mems-based non-volatile switch 基于mems的非易失性开关的可靠性和性能表征
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784472
R. Gaddi, C. Schepens, Charles Smith, C. Zambelli, A. Chimenton, P. Olivo
{"title":"Reliability and performance characterization of a mems-based non-volatile switch","authors":"R. Gaddi, C. Schepens, Charles Smith, C. Zambelli, A. Chimenton, P. Olivo","doi":"10.1109/IRPS.2011.5784472","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784472","url":null,"abstract":"In this paper we report data on the reliability and performance characterization of a CMOS-based non-volatile memory (NVM) array, the operating principle of which is based on stiction forces within a MEMS switch. Unlike any other NVM technology, the data retention of this technology improves with increasing temperatures. The switches have been proven to operate over an extremely wide temperature range from −150°C to 300°C, in a 4MRad/s radiation environment and can withstand acceleration forces up to 20,000g. The technology is an ideal candidate for highly reliable non-volatile memory in harsh environmental applications, like auto-motive, defense, space, down-well and geo-thermal. This NVM switch and a tunable RF-MEMS capacitor will be the first products based on this CMOS integrated MEMS platform.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116872508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Determination of CPU use conditions CPU使用条件的确定
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784455
R. Kwasnick, A. Papathanasiou, M. Reilly, Al M. Rashid, Bashir Zaknoon, John Falk
{"title":"Determination of CPU use conditions","authors":"R. Kwasnick, A. Papathanasiou, M. Reilly, Al M. Rashid, Bashir Zaknoon, John Falk","doi":"10.1109/IRPS.2011.5784455","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784455","url":null,"abstract":"Use condition inputs to physics-of-failure models are required to use knowledge-based qualification of ICs. Modern CPUs have multiple voltage-frequency states which vary widely in reliability stress, but it is not obvious what time in the various states to use in product qualification. We present a methodology for developing a time in state model for CPUs which combines large scale user monitoring and lab-based studies. Results for a specific CPU family, including field validation and implications for knowledge-based qualification, are discussed.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116977650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Application based reliability assessment and qualification methodology for medical ICs 基于应用的医疗集成电路可靠性评估和鉴定方法
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784482
Xiaowei Zhu, K. Vasanth, Xiaochen Xu, Charles Smyth, B. Rhoton
{"title":"Application based reliability assessment and qualification methodology for medical ICs","authors":"Xiaowei Zhu, K. Vasanth, Xiaochen Xu, Charles Smyth, B. Rhoton","doi":"10.1109/IRPS.2011.5784482","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784482","url":null,"abstract":"Reliability assessment and qualification system has strong economic implications for both manufacturers and customers. The best system should have a good balance among cost of verification, market timing requirement, and acceptable risk that meets the targeted user's application conditions and requirements. With the increasing use of innovative electronics in the medical applications, it becomes difficult to have a single reliability assessment and qualification approach to serve all applications. In this paper, we review the existing reliability assessment and qualification framework, and discuss their applicability in medical ICs. We will discuss the tradeoff and challenges in defining reliable medical IC products based on the application demands using a couple of medical IC examples.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"1999 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128262440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An EOS-Free PNP-enhanced cascoded NMOSFET structure for high voltage application 用于高压应用的无eos - pnp增强级联NMOSFET结构
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784506
Shih-Yu Wang, Yao-Wen Chang, Yan-yu Chen, Chieh-Wei He, Guan-Wei Wu, T. Lu, Kuang-Chao Chen, Chih-Yuan Lu
{"title":"An EOS-Free PNP-enhanced cascoded NMOSFET structure for high voltage application","authors":"Shih-Yu Wang, Yao-Wen Chang, Yan-yu Chen, Chieh-Wei He, Guan-Wei Wu, T. Lu, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IRPS.2011.5784506","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784506","url":null,"abstract":"An EOS-free PNP-enhanced cascoded NMOSFET structure for high voltage application is proposed. By controlling the bias of the first gate of cascoded NMOSFET, the EOS-free control circuit can not only raise the holding voltage in normal high voltage (HV) operation to prevent from the threats of EOS damages, but also retain the strong ESD robustness during ESD stress. The improved EOS immunity is successfully verified by a simple EOS-emulating test in this paper.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"71 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120896997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On the evolution of the recoverable component of the SiON, HfSiON and HfO2 P-MOSFETs under dynamic NBTI 动态NBTI作用下SiON、HfSiON和HfO2 p - mosfet可恢复分量的演化
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784609
Y. Gao, A. A. Boo, Z. Teo, D. Ang
{"title":"On the evolution of the recoverable component of the SiON, HfSiON and HfO2 P-MOSFETs under dynamic NBTI","authors":"Y. Gao, A. A. Boo, Z. Teo, D. Ang","doi":"10.1109/IRPS.2011.5784609","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784609","url":null,"abstract":"The evolution of the recoverable (R) component of negative-bias temperature instability (NBTI) is examined, as a function of the number of stress and relaxation cycles, for the SiON, HfSiON, and HfO2 p-MOSFETs. At typical NBTI oxide fields (∼7 MV/cm), a steady and substantial decrease of the R component in the case of the HfO2 p-MOSFET is observed, while the R component of the SiON and HfSiON p-MOSFETs are found to remain constant. A decrease in the R component of the SiON and HfSiON p-MOSFETs is observed only at much higher oxide fields (> 10 MV/cm). Evidence shows that the decrease in the R component is due to a greater tendency for the hole traps in the HfO2 to be transformed into a permanent form (P) under a given oxide field. The result therefore implies that, under typical NBTI oxide fields, the R and P components could share a common defect origin in the case of the HfO2 p-MOSFET. On the other hand, the R and P components are likely to have originated from different defect precursors in the case of the SiON and HfSiON p-MOSFETs. The existence of different oxide fields at which the transformation of the R component into a permanent form occurs for different gate dielectrics implies that the nature of the defect precursors responsible for the R component is intrinsic to the gate dielectric material.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"38 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Understanding and modeling AC BTI 理解和建模AC BTI
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784542
H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlunder
{"title":"Understanding and modeling AC BTI","authors":"H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlunder","doi":"10.1109/IRPS.2011.5784542","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784542","url":null,"abstract":"We present a model for AC NBTI which is based on capture and emission of charges in and out of oxide border traps. Capture and emission time constants of these traps are widely distributed from <µs to >105s and have been experimentally determined. The model gives a good quantitative understanding of experimental data from alternating stress / recovery sequences. It also provides a physical understanding of all the special features seen in AC NBTI independently of technology parameters.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114710563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 93
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