发布求助
文献互助 智能选刊 最新文献

2011 International Reliability Physics Symposium最新文献

筛选
英文 中文
Microanalysis for tin whisker risk assessment 锡晶须风险评估的微量分析
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784473
M. Mason, G. Eng, M. Leung, G. Stupian, T. Yeoh
{"title":"Microanalysis for tin whisker risk assessment","authors":"M. Mason, G. Eng, M. Leung, G. Stupian, T. Yeoh","doi":"10.1109/IRPS.2011.5784473","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784473","url":null,"abstract":"We use microanalysis to illustrate several effects of plating microstructure on tin whisker growth, such as grain size, plating composition, and plating thickness. Starting from the diffusion-based theory of tin whisker growth, we explain why large-grained and thin platings grow fewer whiskers, and why Ni diffusion barriers and Sn-3% Pb solder composition may not be protective against tin whisker growth. We also use tin whisker growth rate data to quantify the diffusion model and predict the time evolution of whisker length distributions. The results provide a consistent framework for tin whisker risk assessment from a materials perspective.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117205835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The relationship between transistor-based and circuit-based reliability assessment for digital circuits 基于晶体管和基于电路的数字电路可靠性评估的关系
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784562
B. Vaidyanathan, S. Bai, A. Oates
{"title":"The relationship between transistor-based and circuit-based reliability assessment for digital circuits","authors":"B. Vaidyanathan, S. Bai, A. Oates","doi":"10.1109/IRPS.2011.5784562","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784562","url":null,"abstract":"Logic, analog, RF, SRAM, and DRAM circuits respond differently to NBTI and HCI induced time dependent parametric shifts. We analyze digital logic susceptibility to these transistor degradation mechanisms and identify the benefits of simulation based aging-induced reliability assurance at the product level.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123772220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Junction optimization for Reliability issues in floating gate NAND flash cells 针对浮栅NAND闪存单元可靠性问题的结优化
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784549
C. H. Lee, I. Yang, Chien-Ming Lee, C. H. Cheng, L. Chong, K. F. Chen, J. S. Huang, S. Ku, N. Zous, I. Huang, T. Han, M. Chen, W. P. Lu, K. C. Chen, Tahui Wang, Chih-Yuan Lu
{"title":"Junction optimization for Reliability issues in floating gate NAND flash cells","authors":"C. H. Lee, I. Yang, Chien-Ming Lee, C. H. Cheng, L. Chong, K. F. Chen, J. S. Huang, S. Ku, N. Zous, I. Huang, T. Han, M. Chen, W. P. Lu, K. C. Chen, Tahui Wang, Chih-Yuan Lu","doi":"10.1109/IRPS.2011.5784549","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784549","url":null,"abstract":"Source/Drain Reliability issues in a floating gate (FG) NAND string with different junction dosages are investigated. A lighter junction dosage gets better sub-threshold swing (SS) and helps the shrinkage of device channel length. However, some drawbacks, such as worse current fluctuation and abnormal self-boosting (SB), can be observed as the side effects. Charge pumping technique is applied to identify their impact, and then, the noise contribution along the channel can be portrayed by random telegraph noise (RTN) profiling. Second, program/erase (P/E) cycling effect is examined. The degradations of cell performance due to stress-induced oxide charges near gate edges are studied. The correlation between SB behavior and junction profile is established. Contrary to conventional global SB (GSB), the local SB (LSB) is more effective in sustaining sufficient channel potential, which enhances local junction or band-to-band field with modest tunneling induced disturbance. It is observed that an abnormal hot carrier injection results in the tail feature at the upper half of erased-VT distribution. Furthermore, the program disturbance of a junction-free structure is also reviewed. The optimized window of dosage regarding disturbance is given.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127188786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM 基于hfobxb的RRAM保留行为统计分析及寿命预测
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784591
Lijie Zhang, Ru Huang, Y. Hsu, Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Weisu Chen, P. Gu, Wenhsing Liu, Shun-Min Wang, Chen-Han Tsai, M. Tsai, Pang-Shiu Chen
{"title":"Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM","authors":"Lijie Zhang, Ru Huang, Y. Hsu, Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Weisu Chen, P. Gu, Wenhsing Liu, Shun-Min Wang, Chen-Han Tsai, M. Tsai, Pang-Shiu Chen","doi":"10.1109/IRPS.2011.5784591","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784591","url":null,"abstract":"In this paper, statistical measurements on the retention behavior of the stable HfOBx-based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction. 10 years lifetime can be obtained with a constant read voltage of 0.2 V even at 160 °C. Also the set time of the RRAM extrapolated by the empirical equation coincides with the experiment value. In addition, the shallow Weibull slope of the retention time can be improved when the variations of the initial resistance is well controlled.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130724739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
VTH shift mechanism in dysprosium (Dy) incorporated HfO2 gate nMOS devices 镝(Dy)中HfO2栅极nMOS器件的VTH移位机制
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784532
Tackhwi Lee, S. Banerjee
{"title":"VTH shift mechanism in dysprosium (Dy) incorporated HfO2 gate nMOS devices","authors":"Tackhwi Lee, S. Banerjee","doi":"10.1109/IRPS.2011.5784532","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784532","url":null,"abstract":"We discuss temperature-dependent Dy diffusion and the diffusion-driven Dy-silicate formation process in Dy incorporated HfO2. The Dy-induced dipoles are closely related to the Dy-silicate formation at the high-k/SiO2 interfaces since the VFB shift in Dy2O3 is caused by the dipole and coincides with the Dy-silicate formation. Dipole formation is a thermally activated process, and more dipoles are formed at a higher temperature with a given Dy content. The Dy-silicate related bonding structure at the interface is associated with the strength of the Dy dipole moment, and becomes dominant in controlling the VFB/VTH shift during the high temperature annealing in the Dy-Hf-O/SiO2 gate oxide system. Dy-induced dipole reduces the degradation of the electron mobility. Charge trapping characteristics in relation to the stress-induced flatband shift and SILC are discussed with a band diagram. The higher effective barrier height of Dy2O3, which is around 2.32 eV, calculated from the F-N plot, accounts for the reduced leakage current in Dy incorporated HfO2 nMOS devices. The lower trap generation rate by the reduced hole trap density and the reduced hole tunneling of the Dy-doped HfO2 dielectric demonstrate the high dielectric breakdown strength by weakening the charge trapping and defect generation during the stress.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131175519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability testing beyond Qualification as a key component in photovoltaic's progress toward grid parity 可靠性测试是光伏发电向电网平价发展的关键组成部分
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784534
J. Wohlgemuth, S. Kurtz
{"title":"Reliability testing beyond Qualification as a key component in photovoltaic's progress toward grid parity","authors":"J. Wohlgemuth, S. Kurtz","doi":"10.1109/IRPS.2011.5784534","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784534","url":null,"abstract":"This paper discusses why it is necessary for new lower cost PV modules to be tested using a reliability test sequence that goes beyond the Qualification test sequence now utilized for modules. Today most PV modules are warranted for 25 years, but the Qualification Test Sequence does not test for 25-year life. There is no accepted test protocol to validate a 25-year lifetime. This paper recommends the use of long term accelerated testing to compare now designs directly with older designs that have achieved long lifetimes in outdoor exposure. If the new designs do as well or better than the older ones, then it is likely that they will survive an equivalent length of time in the field.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 66
Nanosecond transient thermoreflectance imaging of snapback in semiconductor controlled rectifiers 半导体控制整流器中回跳的纳秒瞬态热反射成像
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784567
K. Maize, D. Kendig, A. Shakouri, V. Vashchenko
{"title":"Nanosecond transient thermoreflectance imaging of snapback in semiconductor controlled rectifiers","authors":"K. Maize, D. Kendig, A. Shakouri, V. Vashchenko","doi":"10.1109/IRPS.2011.5784567","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784567","url":null,"abstract":"Transient thermoreflectance imaging method has been applied for the first time to reveal current distribution in ESD protection devices through the surface temperature change due to self heating. Experimentally calibrated temperature images are obtained of a multiple finger, 80 square micron 100V NLDMOS-SCR device in snapback operation regimes for different current levels (1.15–1.47A) and at different times ranging between 100 nanoseconds to one millisecond after the ESD pulse. The novel applied methodology demonstrates a practical and straightforward way to characterize non-uniform temperature and current distribution in ESD structures, revealing effects of non-simultaneous triggering of individual fingers on the multiple finger SCR device.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132522687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Experimental identification of unique oxide defect regions by characteristic response of charge pumping 利用电荷泵送特性响应实验识别氧化缺陷区
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784478
M. Masuduzzaman, A. Islam, R. Degraeve, M. Cho, M. Zahid, M. Alam
{"title":"Experimental identification of unique oxide defect regions by characteristic response of charge pumping","authors":"M. Masuduzzaman, A. Islam, R. Degraeve, M. Cho, M. Zahid, M. Alam","doi":"10.1109/IRPS.2011.5784478","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784478","url":null,"abstract":"Although multi-frequency charge pumping (MFCP) is a widely used characterization technique to study oxide defects, the range and type of defects probed by the technique awaits conclusive identification. In this paper, we use characteristic response of variable channel length, as well as variable Tcharge-Tdischarge CP experiments to self-consistently isolate and assign specific defect energy regions to CP signals. The results confirm the existence of shallow traps in Al2O3 samples and deep traps in HfO2 bulk oxide, as has been speculated by various research groups in the past. We also provide specific experimental guidelines to identify the most prominent defect region for a given transistor technology. Such identification is essential to correctly interpret CP experiments and decide on optimization schemes for gate stacks.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131826498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Robust pad layout to improve wire bonding reliability 坚固的焊盘布局，提高焊线的可靠性
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784539
Kyoung-Hwan Kim, Hong Kook Min, Se Yeoul Park, S. Park, Seung Jin Yang, B. Shim, Y. Kim, Jeong-Uk Han
{"title":"Robust pad layout to improve wire bonding reliability","authors":"Kyoung-Hwan Kim, Hong Kook Min, Se Yeoul Park, S. Park, Seung Jin Yang, B. Shim, Y. Kim, Jeong-Uk Han","doi":"10.1109/IRPS.2011.5784539","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784539","url":null,"abstract":"Different from the conventional study to improve the pad reliability against the peel-off, this study focuses on the probability that the peel-off could be originated from the perpendicular pushing down mechanical stress (PPMS) during the ball mounting process. Suggested in this paper are a new model which causes the peel-off and a new pad structure that overcomes the pad peel-off without any special procedures or changes in material or dimension. Three sets of layout patterns have been designed and fabricated in a 0.13 µm CMOS process. To assess the wire bonding quality, wire pulling tests (WPT) and evaluation of bonding power dependencies by means of wedge wire bonding are conducted. Additionally, FAMMOS simulator is adopted to verify the newly proposed pad structure.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132042798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of steady and transient heating of interconnects - a review 互连的稳态和瞬态加热特性综述
2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784488
B. Barabadi, Y. Joshi, Satish Kumar
{"title":"Characterization of steady and transient heating of interconnects - a review","authors":"B. Barabadi, Y. Joshi, Satish Kumar","doi":"10.1109/IRPS.2011.5784488","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784488","url":null,"abstract":"Continued scaling of transistors and metal interconnects have resulted in high current densities and significant Joule heating in the metal lines, exacerbating thermally driven reliability issues in microprocessors. It is imperative, therefore, to develop an accurate and rapid predictive thermal characterization capability for on chip interconnect arrays to facilitate chip design. This is a multi-scale problem for which the traditional finite difference and finite element methods are generally inefficient due to their large computational times. Also, the thermophysical properties needed as inputs to the models are size dependent at the scale of interest. In this paper, we provide a review of some of the techniques developed recently for steady state and transient thermal characterization.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131034185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信