{"title":"The relationship between transistor-based and circuit-based reliability assessment for digital circuits","authors":"B. Vaidyanathan, S. Bai, A. Oates","doi":"10.1109/IRPS.2011.5784562","DOIUrl":null,"url":null,"abstract":"Logic, analog, RF, SRAM, and DRAM circuits respond differently to NBTI and HCI induced time dependent parametric shifts. We analyze digital logic susceptibility to these transistor degradation mechanisms and identify the benefits of simulation based aging-induced reliability assurance at the product level.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Logic, analog, RF, SRAM, and DRAM circuits respond differently to NBTI and HCI induced time dependent parametric shifts. We analyze digital logic susceptibility to these transistor degradation mechanisms and identify the benefits of simulation based aging-induced reliability assurance at the product level.