Isolating light-sensitive defects using C-AFM

H. Lin, M. Wu
{"title":"Isolating light-sensitive defects using C-AFM","authors":"H. Lin, M. Wu","doi":"10.1109/IRPS.2011.5784528","DOIUrl":null,"url":null,"abstract":"A soft failure, which is recoverable and sensitive to certain stresses, such as voltage, temperature and light, is defined as a failure, fault, defect, or error that results in a shift in the operating margin of a device. Several studies have been conducted into voltage or temperature dependent failures [1–3]. Research into light sensitive failures, however, has seldom been reported, as it is more difficult to isolate defects which are sensitive to light. Although certain global fault isolation techniques, such as photoelectric laser stimulation (PLS) have been developed to localize a wide range of potentially light sensitive defects, by means of the perturbation of the integrated circuit (IC) properties through carrier generation in the silicon, PLS cannot perform an exact failure localization on a single transistor or junction because of limited spatial resolution. This paper describes the use of a conductive atomic force microscope (C-AFM) within the failure analysis (FA) flow as a local fault isolation method in order to generate a more reliable failure hypothesis and successful physical root cause visualization for light-sensitive defects, and, using this technique, such failures, which pose potential reliability issues for devices as the affected circuit degrades over time or under stress, can be easily screened before any quality assurance test.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A soft failure, which is recoverable and sensitive to certain stresses, such as voltage, temperature and light, is defined as a failure, fault, defect, or error that results in a shift in the operating margin of a device. Several studies have been conducted into voltage or temperature dependent failures [1–3]. Research into light sensitive failures, however, has seldom been reported, as it is more difficult to isolate defects which are sensitive to light. Although certain global fault isolation techniques, such as photoelectric laser stimulation (PLS) have been developed to localize a wide range of potentially light sensitive defects, by means of the perturbation of the integrated circuit (IC) properties through carrier generation in the silicon, PLS cannot perform an exact failure localization on a single transistor or junction because of limited spatial resolution. This paper describes the use of a conductive atomic force microscope (C-AFM) within the failure analysis (FA) flow as a local fault isolation method in order to generate a more reliable failure hypothesis and successful physical root cause visualization for light-sensitive defects, and, using this technique, such failures, which pose potential reliability issues for devices as the affected circuit degrades over time or under stress, can be easily screened before any quality assurance test.
利用C-AFM分离光敏缺陷
软故障是可恢复的,并且对某些应力(如电压、温度和光)敏感,它被定义为导致设备工作裕度变化的故障、故障、缺陷或错误。已经对电压或温度相关的故障进行了几项研究[1-3]。然而,对光敏故障的研究很少有报道,因为很难分离对光敏感的缺陷。虽然某些全局故障隔离技术,如光电激光刺激(PLS)已经发展到定位范围广泛的潜在光敏缺陷,通过在硅中产生载流子对集成电路(IC)特性的扰动,PLS不能在单个晶体管或结上执行精确的故障定位,因为有限的空间分辨率。本文描述了在故障分析(FA)流程中使用导电原子力显微镜(C-AFM)作为局部故障隔离方法,以便为光敏缺陷生成更可靠的故障假设和成功的物理根本原因可视化,并且,使用这种技术,由于受影响的电路随着时间的推移或在压力下退化而对设备构成潜在可靠性问题的故障,可以在任何质量保证测试之前轻松筛选。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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