A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

Abstract

We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.