深n阱过程中sram中中子引起的多单元扰动分析

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI:10.1109/IRPS.2011.5784599

N. Mahatme, B. Bhuva, Y. Fang, A. Oates

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引用次数: 27

摘要

这项工作解释了在deep - n井过程中实施的高规模sram中由于中子撞击引起的单比特和多单元扰动现象。三维TCAD模拟用于解释测试结果，破坏机制和对ECC的影响。

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Analysis of multiple cell upsets due to neutrons in SRAMs for a Deep-N-well process

This work accounts for the single-bit and multiple-cell upset phenomena due to neutron strikes in highly scaled SRAMs implemented in a Deep-N-well process. 3D TCAD simulations are used to explain test results, upset mechanisms and implications for ECC.

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2011 International Reliability Physics Symposium

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