{"title":"Reliability limitations to the scaling of porous low-k dielectrics","authors":"Shou-Chung Lee, A. Oates","doi":"10.1109/IRPS.2011.5784469","DOIUrl":null,"url":null,"abstract":"We show that processes used to fabricate advanced porous dielectrics can exhibit reliability approaching the intrinsic capability of the material. Combining this with simulations of failure distributions as a function of porosity and line edge roughness we demonstrate that failure times due to electrical breakdown rapidly decrease below k=2.3. The rapid failure time decrease is due to the statistical nature of increasing porosity (decreasing k), which leads to a shortening of the percolation path for dielectric breakdown. Continued scaling will require greater understanding of the breakdown impact on circuits as well as materials innovations to improve robustness.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
We show that processes used to fabricate advanced porous dielectrics can exhibit reliability approaching the intrinsic capability of the material. Combining this with simulations of failure distributions as a function of porosity and line edge roughness we demonstrate that failure times due to electrical breakdown rapidly decrease below k=2.3. The rapid failure time decrease is due to the statistical nature of increasing porosity (decreasing k), which leads to a shortening of the percolation path for dielectric breakdown. Continued scaling will require greater understanding of the breakdown impact on circuits as well as materials innovations to improve robustness.