{"title":"A 5-GHz BiCMOS variable-gain low noise amplifier with inductorless low-gain branch","authors":"Mingxu Liu, J. Craninckx","doi":"10.1109/ESSCIR.2005.1541600","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541600","url":null,"abstract":"A 5-GHz variable-gain low noise amplifier without using an excess inductor in its low-gain mode has been demonstrated. When the LNA's gain is reduced from 16.3 dB to 5.8 dB, its IIP3 is improved from -7.8 dBm to +1.1 dBm and current consumption is reduced from 3 mA to 2 mA. The noise figures in the high- and low-gain modes are 3.5 dB and 8.3 dB, respectively. Input and output impedance matching are well maintained in both modes. The amplifier is also unconditionally stable from 100 MHz to 10 GHz.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"260 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114263807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Woonyun Kim, Sung-Gi Yang, Yeon-kug Moon, J. Yu, Heeseon Shin, Wooseung Choo, Byeong-ha Park
{"title":"IP2 calibrator using common mode feedback circuitry","authors":"Woonyun Kim, Sung-Gi Yang, Yeon-kug Moon, J. Yu, Heeseon Shin, Wooseung Choo, Byeong-ha Park","doi":"10.1109/ESSCIR.2005.1541602","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541602","url":null,"abstract":"An IP2 calibration technique is developed using the common mode feedback circuitry in a direct-conversion receiver for wireless CDMA/PCS/GPS/FM applications. The IP2 calibrator is capable of providing a different CMFB gain to tune its common mode output impedance for each of the positive and negative mixer outputs. The method performs a 20-dB improvement in IIP2. The CDMA mixer achieves an uncalibrated IIP2 of 44 dBm, an IIP3 of 4 dBm, a noise figure of 6.5 dB and a voltage gain of 42.2 dB. The receiver RFIC is implemented in a 0.5 /spl mu/m SiGe BiCMOS process, and it operates from a 2.7 to 3.1 V single power supply. It exceeds all CDMA requirements when tested individually or on a handset.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122634031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A low-power 2-GSample/s comparator in 120 nm CMOS technology","authors":"Bernard Goll, H. Zimmermann","doi":"10.1109/ESSCIR.2005.1541671","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541671","url":null,"abstract":"This paper presents a comparator in 120nm digital CMOS technology with a supply voltage of 1.5V. In contrast to common comparator structures a delayed reset signal is used to enhance the output voltage difference with the help of charge injection. Furthermore the body effect of p-MOS transistors with their separated n-wells are used to lower their threshold voltage to have an increase in resolution. For characterization several BER (bit-error-rate) measurements on the comparator have been made. For a BER of 109 the comparator is able to detect an input voltage difference of 9.5mV at a clock frequency of 1.5GHz and 16mV at 2.0GHz. The maximum power consumption of the comparator with two following additional transfer stages is 360/spl mu/W at 2.0GHz.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115260687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Tajalli, P. Muller, S. M. Atarodi, Y. Leblebici
{"title":"A multichannel 3.5mW/Gbps/channel gated oscillator based CDR in a 0.18/spl mu/m digital CMOS technology","authors":"A. Tajalli, P. Muller, S. M. Atarodi, Y. Leblebici","doi":"10.1109/ESSCIR.2005.1541592","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541592","url":null,"abstract":"This article presents a very low-power clock and data recovery (CDR) circuit with 8 parallel channels achieving an aggregate data rate of 20 Gbps. A structural top-down design methodology has been applied to minimize the power dissipation while satisfying the required specifications for short-haul receivers. Implemented in a 0.18/spl mu/m digital CMOS technology, total power dissipation is 70.2mW or 3.51mW/Gbps/ch and each channel occupies 0.045/spl mu/m/sup 2/ silicon area.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"11 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131637851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Matakias, Y. Tsiatouhas, A. Arapoyanni, T. Haniotakis, G. Prenat, S. Mir
{"title":"A built-in I/sub DDQ/ testing circuit","authors":"S. Matakias, Y. Tsiatouhas, A. Arapoyanni, T. Haniotakis, G. Prenat, S. Mir","doi":"10.1109/ESSCIR.2005.1541662","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541662","url":null,"abstract":"Although I/sub DDQ/ testing has become a widely accepted defect detection technique for CMOS ICs, its effectiveness in very deep submicron technologies is threatened by the increased transistor leakage current. In this paper, a built-in I/sub DDQ/ testing circuit is presented, that aims to extend the viability of I/sub DDQ/ testing in future technologies and first experimental results are discussed.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124017580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 0.18/spl mu/m CMOS switched capacitor voltage modulator","authors":"Koen Cornelissens, P. Reynaert, M. Steyaert","doi":"10.1109/ESSCIR.2005.1541638","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541638","url":null,"abstract":"A voltage modulator using only switched capacitors is presented. Depending on the desired output voltage a combination of capacitances is connected to the output capacitance, to increase or decrease the output voltage. The circuit is capable of delivering output signals within a frequency range from DC up to 100 kHz, with all harmonic distortion components below 30 dB. Operating at a supply voltage of 1.8 V, it delivers a maximum output power of 32mW with an efficiency of 72%.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115588030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Differential image sensor with high common mode rejection","authors":"M. Innocent, G. Meynants","doi":"10.1109/ESSCIR.2005.1541665","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541665","url":null,"abstract":"Image processing applications like tracking of moving objects typically involve the subtraction of two successive images. Doing this without the need for a large digital memory requires a sensor chip that does the subtraction in the analog domain. This paper provides insight in the critical issues of the design of such a differential image sensor. The presented sensor has two operation modes: a very low noise correlated double sampling (CDS) mode and a differential image (DI) mode. This sensor is optimized to have a high common mode rejection ratio (CMRR) which results in a small influence from the content of the image onto the differential image.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115716013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"120nm CMOS OPAMP with 690 MHz f/sub T/ and 128 dB DC gain","authors":"Franz Schlögl, H. Zimmermann","doi":"10.1109/ESSCIR.2005.1541607","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541607","url":null,"abstract":"In this paper, an advancement to compensate multistage operational amplifiers is presented. High-gain and highspeed operational amplifiers can be realized with this approach. One example of such a high-gain amplifier with a unity-gain frequency of 693 MHz and DC gain of 128.8dB is presented. The high-speed settling is mainly reached by dominant Miller compensation via 4 stages.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122600070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A fast-lock mixed-mode DLL with wide-range operation and multiphase outputs","authors":"Kuo-Hsing Cheng, Y. Lo","doi":"10.1109/ESSCIR.2005.1541591","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541591","url":null,"abstract":"This paper describes a fast-lock mixed-mode delay-locked loop (MMDLL) for wide-range operation and multiphase outputs. The architecture of the proposed DLL uses the mixed-mode time-to-digital converter (TDC) scheme for frequency range selector, a start-up circuit and coarse tune circuit to offer the faster lock time. And the multi-controlled delay cell for voltage-controlled delay line (VCDL) was used to provide the wide locked range and low-jitter performance. The charge pump circuit is implemented by digital controlled scheme to reach bandwidth tracking. The chip has been fabricated using the TSMC 0.25-/spl mu/m single-poly five-metal CMOS process with a 2.5 V power supply voltage. From the measurement results, this DLL can operate correctly when the input clock frequency is changed from 32 to 320 MHz and generate ten-phase clocks within just one clock cycle. Moreover, the proposed DLL can solve the problem of the false locking associated with conventional DLLs and wide-range operation. At 320 MHz, the measured peak-to-peak jitter and root-mean-squared jitter are 37.2 ps and 2.492 ps, respectively. Furthermore, the locking time is less than 22 clock cycles based on the HSPICE simulation results. The DLL occupies smaller area (0.32 /spl times/ 0.22 mm/sup 2/) and dissipates less power (15 mW) than other wide-range DLLs presented in Y. J. Jung et al. (2001), D. J. Foley et al. (2001), Y. Moon et al. (2000), B. W. Garlepp et al. (1999), H. H. Chang et al. (2002), S. Sidiropoulos et al. (1997) and S. J. Kim et al. (2002).","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131251419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design for manufacturing in the nanoscale era","authors":"C. Bittlestone","doi":"10.1109/ESSCIR.2005.1541593","DOIUrl":"https://doi.org/10.1109/ESSCIR.2005.1541593","url":null,"abstract":"Design for manufacturing, DFM, has been an increasingly important area for several years. Lithography at 90nm, 65nm, and below takes DFM into the critical zone for designers. Designers must now use extreme measures to achieve full technology entitlement of performance, power, area, reliability and yield. This presentations focus on major physical DFM effects and their impact on designers. It uses real life examples from 90 and 65nm to illustrate problems and trends. Several focus issues are linked to design impact and onto rules, modeling and other mitigation techniques. This talks touch on several critical areas such as RET/OPC/litho/etch, simulation, layout rules, and extraction. Both systematic and random effects are mentioned. Also covered are examples of some methods that are used to model or design around these issues to enable designers to meet technology entitlement goals.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134199229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}