Thin Solid Films最新文献_第3页

Morphological and structural analysis of gradient Ni and Mn-doped lithium cobalt oxide thin films for lithium-ion battery applications 用于锂离子电池的梯度Ni和mn掺杂钴酸锂薄膜的形态和结构分析

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-11 DOI: 10.1016/j.tsf.2026.140888

José David Castro , Zohra Benzarti , Edgar Carneiro , António Fonseca , Sandra Carvalho , Albano Cavaleiro , C.F.Almeida Alves , Sandra M.A. Cruz

{"title":"Morphological and structural analysis of gradient Ni and Mn-doped lithium cobalt oxide thin films for lithium-ion battery applications","authors":"José David Castro , Zohra Benzarti , Edgar Carneiro , António Fonseca , Sandra Carvalho , Albano Cavaleiro , C.F.Almeida Alves , Sandra M.A. Cruz","doi":"10.1016/j.tsf.2026.140888","DOIUrl":"10.1016/j.tsf.2026.140888","url":null,"abstract":"<div><div>This study provides a comprehensive analysis of LiCoO₂ (LCO), LiNiCoO₂ (LNCO), and LiMnNiCoO₂ (LMNCO) thin-film cathodes fabricated in a co-sputtering system (RF and DC power sources), with a particular focus on LMNCO’s structural and electrochemical performance, aiming to evaluate its potential for improved Li-ion storage. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) revealed granular surface morphology with Li₂CO₃ formation and distinct crystallinity, while LMNCO exhibited a multiphase structure that promotes Li-ion diffusion. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) studies confirmed the incorporation of Ni and Mn, surface carbonate formation, and elemental redistribution following deposition. Electrochemical testing by cyclic voltammetry showed limited activity for LCO, whereas LNCO and LMNCO displayed clear redox processes involving Ni, Co, and Mn. LMNCO demonstrated improved electrochemical response with clear evidence of Mn oxidation and Li intercalation, confirming its potential as a high-performance thin-film cathode. These results advance the understanding of compositionally complex cathodes and underscore the role of graded morphologies in optimising energy storage performance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140888"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering 直流低功率溅射制备高透明低阻氧化铟锡薄膜

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-14 DOI: 10.1016/j.tsf.2026.140892

Xueqi Chen, Manyao Wang, Zongyu Huang, Xiang Qi

{"title":"Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering","authors":"Xueqi Chen, Manyao Wang, Zongyu Huang, Xiang Qi","doi":"10.1016/j.tsf.2026.140892","DOIUrl":"10.1016/j.tsf.2026.140892","url":null,"abstract":"<div><div>Indium tin oxide (ITO) films were prepared by 15–100 W direct current (DC) magnetron sputtering and then annealed at high temperature. The effect of sputtering power on the structural, optical and electrical properties of the films was systematically investigated. Optical transmittance in the visible range (400–800 nm) decreased from 89% (15 W) to 24% (100 W) due to defect-mediated light scattering, but recovered to >85% after annealing. Electrical measurements indicate that annealing in an argon atmosphere enhances carrier concentration by promoting oxygen desorption, significantly reducing resistivity and yielding superior performance compared to samples annealed in air or vacuum. The optimal sputtering power of 60 W yields a high figure of merit (649 × 10<sup>–4</sup> Ω<sup>-1</sup>) with a balance of low resistivity (7 × 10<sup>–5</sup> Ωcm), low square resistance (6 ± 0.23 Ω/sq), and high transmittance (91%). This study proposes an optimised process route for achieving high-performance ITO thin films. By mitigating target material depletion issues and overcoming traditional high-power limitations, it broadens the process's applicability, holding significant value for industrial implementation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140892"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of ZnO seed layer annealing for growth of oriented ZnO nano columns towards superior ultra-violet detection ZnO种子层退火对ZnO定向纳米柱生长的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-02-10 DOI: 10.1016/j.tsf.2026.140887

Bholanath Ghosh , Ranajit Ghosh

{"title":"Effect of ZnO seed layer annealing for growth of oriented ZnO nano columns towards superior ultra-violet detection","authors":"Bholanath Ghosh , Ranajit Ghosh","doi":"10.1016/j.tsf.2026.140887","DOIUrl":"10.1016/j.tsf.2026.140887","url":null,"abstract":"<div><div>Oriented one-dimensional (1D) semiconducting nanostructures play a crucial role in advancing optoelectronic applications, particularly in ultraviolet (UV) detection. In this work, we have investigated the influence of ZnO nano column (NC) orientation on the enhancement of UV sensitivity, where the degree of orientation was controlled by varying the annealing temperature of the ZnO seed layer. ZnO seed layers (deposited on glass substrates) were annealed at three different temperatures (350°C, 450°C, and 550°C), followed by hydrothermal growth of ZnO NCs on the seeded layers. The ZnO NCs grown on the seed layer annealed at 550°C exhibited highly c-axis orientation, yielding a remarkably high photosensitivity (I<sub>ph</sub>/I<sub>d</sub>) of 1.66 × 10⁵, a responsivity of 10.9 A/W, and a specific detectivity of 4.38 × 10¹³ Jones at a wavelength of 385 nm. This study provides valuable insight into the relationship between ZnO nanostructure orientation and UV detection performance. The fabricated UV detectors exhibited excellent operational stability, maintaining a consistent UV response over four ON–OFF illumination cycles, along with reproducible photo- and dark-current values with a variation of ±4.3 %.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140887"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of co-evaporated CIGS5 (Cu0.65In1.75Ga1.4S5) lamellar material used as absorber in thin film solar cell 薄膜太阳能电池吸收剂共蒸发CIGS5 （Cu0.65In1.75Ga1.4S5）片层材料的表征

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-29 DOI: 10.1016/j.tsf.2026.140875

Amal Belhcen , Ludovic Arzel , Adèle Renaud , Eric Gautron , Catherine Guillot-Deudon , Stéphane Jobic , Maria Teresa Caldes , Nicolas Barreau

{"title":"Characterization of co-evaporated CIGS5 (Cu0.65In1.75Ga1.4S5) lamellar material used as absorber in thin film solar cell","authors":"Amal Belhcen , Ludovic Arzel , Adèle Renaud , Eric Gautron , Catherine Guillot-Deudon , Stéphane Jobic , Maria Teresa Caldes , Nicolas Barreau","doi":"10.1016/j.tsf.2026.140875","DOIUrl":"10.1016/j.tsf.2026.140875","url":null,"abstract":"<div><div>Single-phase lamellar CIGS<sub>5</sub> (Cu<sub>0.65</sub>In<sub>1.75</sub>Ga<sub>1.4</sub>S<sub>5</sub>, nominal composition) thin films were synthesized using co-evaporation. Structural, morphological and optoelectronic properties of these films have been investigated. The optical bandgap was calculated at approximately 2.1 eV, but extended band tails hinder an accurate determination. Such behavior may be related to the high density of point defects inherent in the crystal structure of CIGS<sub>5</sub>, which exhibits intrinsic cationic vacancies and mixed site occupancy. This results in compensated semiconducting behavior, with no clearly identified charge carriers. Nevertheless, photoelectrochemical measurements suggest an extremely weak excess of electrons. Diverse solar cell architectures with CIGS<sub>5</sub> as absorber were fabricated. All exhibit very low efficiency. These poor performances are discussed and are attributed to the intrinsic optoelectronic properties of CIGS<sub>5</sub> material in ambient conditions due to a charge compensating effect.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140875"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conductivity mechanisms of the nanocomposite SiOx(Si)&CuyO(Cu) films 纳米复合SiOx(Si)&CuyO（Cu）薄膜的导电机理

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-24 DOI: 10.1016/j.tsf.2026.140874

Oleh Bratus , Antonina Kykot , Anton Semeniuk , Slawomir Prucnal , Pavels Onufrijevs , Jevgenijs Kaupuzs , Svitlana Bugaychuk , Tetiana Sydorenko , Volodymyr Ilchenko , Volodymyr Marin , Igor Sokolovskyi , Tomash Sabov , Anatoliy Evtukh

{"title":"Conductivity mechanisms of the nanocomposite SiOx(Si)&CuyO(Cu) films","authors":"Oleh Bratus , Antonina Kykot , Anton Semeniuk , Slawomir Prucnal , Pavels Onufrijevs , Jevgenijs Kaupuzs , Svitlana Bugaychuk , Tetiana Sydorenko , Volodymyr Ilchenko , Volodymyr Marin , Igor Sokolovskyi , Tomash Sabov , Anatoliy Evtukh","doi":"10.1016/j.tsf.2026.140874","DOIUrl":"10.1016/j.tsf.2026.140874","url":null,"abstract":"<div><div>Nanocomposite films were obtained by simultaneous sputtering of the combined Cu/Si target in the O<sub>2</sub>/Ar atmosphere by ion-plasma sputtering. As a result of the investigation of the structure of the films by X-ray diffraction, crystalline inclusions of Cu, Cu<sub>2</sub>O were detected іn the as-deposited film and Cu, Cu<sub>2</sub>O, CuO in the one annealed at temperature <em>T</em> = 400°C. The main mechanisms of electron transport through nanocomposite SiO<sub>x</sub>(Si)&Cu<sub>y</sub>O(Cu) films containing Cu nanoparticles and amorphous Si inclusions have been established. In the low voltage range, annealing of nanocomposite SiO<sub>x</sub>(Si)&Cu<sub>y</sub>O(Cu) films leads to a redistribution of the density of electronic states and the concentration of the traps near the Fermi level, which changes the superposition of ohmic conductivity with the Mott, Efros-Shklovskii, Arrhenius mechanisms. In the region of low temperatures and medium voltages the Poole-Frenkel mechanism is realized for both samples. But at the higher measurement temperatures 170 K < <em>T</em> < 350 K the space-charge-limited current mechanism with the exponential distribution of traps in the band gap is revealed for the initial and annealed films. In the range of low temperatures and high voltages trap-assisted tunneling is observed for the initial sample. The dielectric-metal transition was detected in the case of initial films in the high voltage range. The effect of temperature annealing of nanocomposite SiO<sub>x</sub>(Si)&Cu<sub>y</sub>O(Cu) films on their electrical conductivity is the consequence of their structural transformation, which leads to the change in the concentration and energy position of electron traps in the band gap, which participate in conductivity.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140874"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146049150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric breakdown and reliability of thin film insulators for high-voltage microelectromechanical systems applications 高压微机电系统用薄膜绝缘体的介电击穿和可靠性

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-30 DOI: 10.1016/j.tsf.2026.140876

Michael N. Getz , Abélia Ellingsen , Runar Dahl-Hansen , Enrique Escobedo-Cousin , Elizaveta Vereshchagina

{"title":"Dielectric breakdown and reliability of thin film insulators for high-voltage microelectromechanical systems applications","authors":"Michael N. Getz , Abélia Ellingsen , Runar Dahl-Hansen , Enrique Escobedo-Cousin , Elizaveta Vereshchagina","doi":"10.1016/j.tsf.2026.140876","DOIUrl":"10.1016/j.tsf.2026.140876","url":null,"abstract":"<div><div>The growing demand for miniaturized and digitally integrated systems has accelerated the adoption of microelectromechanical systems (MEMS) across high-voltage applications, including electroseparation, microplasmas, and electrospraying. As these applications often operate in the kV range, dielectric reliability becomes a critical design consideration. This study presents a controlled, side-by-side comparison of breakdown behaviour, leakage current, and process compatibility of thermal SiO<sub>2</sub>, plasma-enhanced chemical vapour deposition SiO<sub>2</sub>, Low-pressure chemical vapour deposition SiN<sub>x</sub>, and atomic layer deposition (ALD)-Al<sub>2</sub>O<sub>3</sub> using capacitive test structures with comparable film thicknesses. Thermal SiO<sub>2</sub> exhibited the highest dielectric strength, reaching high fields of up to 24 MV/cm for a 54 nm dry oxide, although its ≥1000 °C processing temperature limits post-metallization compatibility. Among low-temperature options, ALD-Al<sub>2</sub>O<sub>3</sub> demonstrated the most promising performance, with the best-performing process variation achieving a median breakdown field of 14.8 MV/cm and a median leakage current of 11 nA/cm² at 8 MV/cm for a 61 nm film deposited at 220 °C and annealed at 450 °C. These values exceed those reported for comparable thicknesses, highlighting the sensitivity of dielectric performance to both deposition and annealing conditions. The findings provide practical guidance for selecting dielectric materials that ensure substrate insulation reliability in high-voltage MEMS applications, balancing electrical performance with fabrication constraints.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140876"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring multifunctional properties of Co80La20 thin films via annealing and substrate engineering for advanced spintronic and optoelectronic applications 通过退火和衬底工程定制Co80La20薄膜的多功能特性，用于先进的自旋电子和光电子应用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-22 DOI: 10.1016/j.tsf.2026.140866

Shih-Hung Lin , Yung-Huang Chang , Yuan-Tsung Chen , Yu-Chieh Liao , Yun-Sheng Zheng , Huang-Wei Chang

{"title":"Tailoring multifunctional properties of Co80La20 thin films via annealing and substrate engineering for advanced spintronic and optoelectronic applications","authors":"Shih-Hung Lin , Yung-Huang Chang , Yuan-Tsung Chen , Yu-Chieh Liao , Yun-Sheng Zheng , Huang-Wei Chang","doi":"10.1016/j.tsf.2026.140866","DOIUrl":"10.1016/j.tsf.2026.140866","url":null,"abstract":"<div><div>Nanostructured cobalt lanthanum (Co<sub>80</sub>La<sub>20</sub>) thin films with thicknesses of 10–50 nm were deposited on glass and silicon (Si)(100) substrates by direct current (DC) magnetron sputtering and subsequently annealed at 100, 200, and 300 °C. Structural analysis via X-ray diffraction (XRD) and atomic force microscopy (AFM) revealed improved crystallinity, grain growth, and increased surface roughness with annealing. Magnetic force microscopy (MFM) demonstrated a transition from fragmented to well-aligned stripe-like magnetic domains, associated with enhanced in-plane magnetic anisotropy. Magnetic characterization confirmed soft magnetic behavior, showing reduced coercivity (Hc) and increased remanence magnetization (Mr) after annealing. Mechanical measurements indicated significant increases in hardness and Young’s modulus, attributed to grain boundary strengthening and defect reduction. Optical transmittance decreased with increasing film thickness (t<sub>f</sub>) and roughness due to enhanced scattering, while electrical conductivity improved as a result of increased carrier mobility and reduced resistivity, despite a minor decrease in carrier concentration after annealing. This work highlights the synergistic effect of annealing temperature (T<sub>A</sub>) and substrate crystallinity on tuning the structural, magnetic, mechanical, optical, and electrical properties of Co<sub>80</sub>La<sub>20</sub> thin films. The findings demonstrate their promising potential for multifunctional applications including flexible spintronic devices, magnetic sensors, and transparent conductive films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140866"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relation between surface morphology, facet selection, and crystal orientation in electroless copper deposits on polycrystalline copper substrates 多晶铜衬底上化学镀铜的表面形貌、面选择和晶体取向之间的关系

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-02-02 DOI: 10.1016/j.tsf.2026.140882

Ralf Brüning , Abhijit Singh , Sawyer Stanley , Mehrad Hajati , Tobias Bernhard , Sascha Dieter , Grégoire Dietrich

{"title":"Relation between surface morphology, facet selection, and crystal orientation in electroless copper deposits on polycrystalline copper substrates","authors":"Ralf Brüning , Abhijit Singh , Sawyer Stanley , Mehrad Hajati , Tobias Bernhard , Sascha Dieter , Grégoire Dietrich","doi":"10.1016/j.tsf.2026.140882","DOIUrl":"10.1016/j.tsf.2026.140882","url":null,"abstract":"<div><div>The relationship between surface morphology and crystal orientation in polycrystalline films is investigated using a quantitative experimental approach that analyzes hundreds of crystals and identifies thousands of facets. Four industry-relevant electroless copper deposits used for microvia filling in high-density interconnect printed circuit boards are examined. The reliability of copper–copper interlayer connections depends critically on the surface characteristics of the electroless copper layer prior to subsequent electrodeposition. Electroless copper films deposited from baths stabilized with sodium cyanide or 2,2′-bipyridine, each prepared with and without nickel additives, are characterized. Surface topography measured by atomic force microscopy is correlated with crystal orientation data obtained by electron backscatter diffraction to identify the crystallographic facet types present at the surface. Deposits from cyanide-stabilized baths exhibit angular surface morphologies with smooth low-index {100} and {111} facets oriented parallel to the surface. Grains with a [110] orientation display increased roughness due to alternating {110} and {100} facets. In contrast, deposits from 2,2′-bipyridine-stabilized baths show more gradual facet transitions and a broader distribution of facet types. Statistical analysis reveals distinct correlations between crystal orientation and surface facet combinations.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140882"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TiNbN-coated CoCr alloy with enhanced ion release inhibition capacity for biomedical applications 生物医学应用中具有增强离子释放抑制能力的tinbn涂层CoCr合金

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-31 DOI: 10.1016/j.tsf.2026.140881

Zhiquan Huang , Yunlong Yu , Fang Yuan , Chunbo Tang , Wubian Tian , Jian Chen

{"title":"TiNbN-coated CoCr alloy with enhanced ion release inhibition capacity for biomedical applications","authors":"Zhiquan Huang , Yunlong Yu , Fang Yuan , Chunbo Tang , Wubian Tian , Jian Chen","doi":"10.1016/j.tsf.2026.140881","DOIUrl":"10.1016/j.tsf.2026.140881","url":null,"abstract":"<div><div>Cobalt-chromium (CoCr) alloys have been commonly used in orthopedic implants due to their exceptional mechanical properties and biocompatibility. While CoCr alloys continue to face significant challenges, including the release of Co and Cr ions due to corrosion and wear during prolonged service, as well as the harmful effects of wear debris on human tissue. TiNbN coating offers a promising approach to enhance the corrosion and wear resistance of CoCr alloys. However, the underlying mechanisms of TiNbN coating related to the ion release inhibition and the failure modes under wear conditions are lack of research. This study, therefore, aims to characterize the TiNbN coating deposited by magnetron sputtering and compare its composition, structure, and mechanical properties with TiN coating and CoCr substrate, focusing on their effects on corrosion resistance, wear performance, and biological properties. Furthermore, the mechanisms driving ion release during accelerated degradation and wear failure processes are systematically explored.</div><div>The results indicate that TiNbN coating exhibits significantly improved corrosion resistance, wear resistance, and ion release inhibition due to a denser microstructure and superior mechanical properties compared to TiN coating and CoCr substrate. Accelerated degradation tests of TiNbN coating reveal that corrosion products filling micropores and cracks within the coating effectively inhibit the release of Co and Cr ions. The wear failure mechanism of TiNbN coating gradually transits from initial abrasive wear to fatigue and adhesive wear, with oxidative wear throughout. Finally, <em>in vitro</em> cytotoxicity assessments suggest that TiNbN coating holds strong potential as biomaterials for orthopedic implant applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140881"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Short-range order and optical properties of thin GeOx films obtained by thermal evaporation of GeO and GeO2 GeO和GeO2热蒸发制备的GeOx薄膜的近程阶数和光学性质

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-02-15 Epub Date: 2026-01-23 DOI: 10.1016/j.tsf.2026.140869

Ghaithaa Hamoud , Alexey Samus , Alexey Matsynin , Sergey Komogortsev , Vyacheslav Zhandun , Igor Prosvirin , Ksenia Astankova , Ivan Azarov , Pavel Geydt , Ilya Milekhin , Vladimir Volodin

引用次数: 0