Thin Solid Films最新文献

{"title":"Electrodeposition and electrocatalytic performance of Pd-Ni alloy films from aqueous solutions for enhanced electrochemical hydrogen evolution","authors":"Wangping Wu,&nbsp;Zhengjie Xing,&nbsp;Liu Ju","doi":"10.1016/j.tsf.2024.140587","DOIUrl":"10.1016/j.tsf.2024.140587","url":null,"abstract":"<div><div>Palladium-nickel (Pd-Ni) alloy films were electrodeposited on copper supports. The influence of deposition parameters on the surface morphology and chemical composition of the films was investigated. The surface morphology, chemical composition and elemental states of the films were characterized using scanning electron microscopy, energy-dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. The electrocatalytic performance of the selected films was evaluated through linear sweep voltammetry, electrochemical impedance spectroscopy and cyclic voltammetry. The results demonstrate that the deposition parameters significantly influenced the deposition rate of the films. The deposition rate increased with the current density, showing a change trend in initially increase and then decrease with the rise in bath temperature and deposition time. The particle size of the film increased with both current density and deposition time. Pd-Ni films exhibited the face-centered cubic structure of polycrystalline phase, the grain size and lattice parameters decreased as the Ni-content increased. Pd₇₈Ni₂₂ film with many spherical particles exhibited good electrocatalytic activity in alkaline solution, requiring only the overpotential of 162 mV to achieve a current density of 10 mA·cm⁻², which demonstrated a low Tafel slope of 47.6 mV·dec⁻¹ and an exchange current density as high as 0.326 mA·cm⁻².</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140587"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of atomic ratio of Mg to Sn on thermoelectric properties of Mg2Sn films","authors":"Ying Liu ,&nbsp;Guihong Song ,&nbsp;Kaiping Tai ,&nbsp;Zhi Yu ,&nbsp;Yijun Ran ,&nbsp;Juan He ,&nbsp;Yusheng Wu","doi":"10.1016/j.tsf.2024.140585","DOIUrl":"10.1016/j.tsf.2024.140585","url":null,"abstract":"<div><div>The influence of Mg/Sn ratio of on the thermoelectric properties of Mg-Sn films was deeply studied through preparing a series of Mg₂Sn films with different Mg and Sn atomic ratios on SiO₂/Si substrate. The results showed that the phase structure of the deposited Mg₂Sn films varied from a metastable orthogonal phase to a mixture of orthogonal and cubic phase, and then to a highly symmetric cubic phase with increasing [Mg]/[Sn]. Meanwhile, with increasing [Mg]/[Sn], the carrier concentration and electrical conductivity of the deposited films first decreased and then increased, while the carrier mobility and Seebeck coefficient varied in an opposite trend. The cubic Mg₂Sn phase film with [Mg]/[Sn] = 1.94 has the highest Seebeck coefficient and appropriate electrical conductivity, reaching the highest power factor of 3.10 μW cm^-1 K^-2 at 235 °C and figure of merit of 0.059 at 125 °C.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140585"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanostructuring of thin silver films by Ar cluster ions","authors":"D.S. Kireev ,&nbsp;O.A. Streletskiy ,&nbsp;A.A. Tatarintsev ,&nbsp;D.R. Bessmertny ,&nbsp;M.V. Samodelova ,&nbsp;N.R. Yarenkov ,&nbsp;A.E. Ieshkin","doi":"10.1016/j.tsf.2024.140578","DOIUrl":"10.1016/j.tsf.2024.140578","url":null,"abstract":"<div><div>In this work, we studied the formation of silver nanoparticles on silicon substrates by irradiating thin silver films with Ar⁺₁₀₀₀ cluster ions with an energy of 10 keV. The topography of the film surface was studied using scanning electron microscopy. The dependence of the particle size and their surface density on the ion fluence was described, which opens a way for controlling the geometric parameters of the particles. Particle formation was considered as a result of two competing processes: sputtering and surface migration of the film atoms. Irradiation with cluster ions at oblique incidence leaded to formation of the particles of elongated shape, with the particle height being comparable to the initial film thickness. Applicability of the particles to surface enhanced Raman spectroscopy was characterized using the dye rhodamine 6 G.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140578"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of photoresponsivity, specific detectivity and interface properties of Au/ZnPc/InP/In photodiode at different illumination wavelengths","authors":"A. Usha Rani ,&nbsp;S. Ashajyothi ,&nbsp;A. Ashok Kumar ,&nbsp;V. Rajagopal Reddy","doi":"10.1016/j.tsf.2024.140594","DOIUrl":"10.1016/j.tsf.2024.140594","url":null,"abstract":"<div><div>This work explores the interface properties of Au/zinc phthalocyanine (ZnPc)/InP/In photodiode (PD) under dark and different illumination wavelengths. Bias-dependent properties of the PD such as photo-to-dark current ratio, photoresponsivity and specific detectivity (D*) were evaluated for the illumination wavelength from 400 to 1000 nm in steps of 20 nm. The photoresponsivity and D* appear superior for specific wavelengths, such as 640, 680, 740, 780, 860 and 960 nm. The barrier properties of the PD were analysed for these selective wavelengths. Variation of barrier parameters under illumination at different wavelengths signifies the generation of photo carriers that influence the photocurrent, which alters the series and shunt resistance of the junction. The barrier parameters were also evaluated using the thermionic emission model, Cheung's and Norde's methods. The magnitude of barrier parameters obtained using these approaches shows their consistency and validity. The density of states distribution was obtained from the forward bias photocurrent–voltage curves for dark and selective illumination wavelengths. The current transport processes of PD were explored under both forward and reverse bias conditions in dark and different illumination wavelengths. Analysis indicates that ohmic and space charge limited current processes in the forward bias of PD are present in both dark and illumination conditions. Additionally, it was found that Poole-Frenkel emission governs at lower bias, while Schottky emission governs at higher bias regions in the reverse bias of PD in both dark and illumination conditions.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140594"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Grazing emission X-ray fluorescence characterization of a thin-film waveguide with laboratory equipment","authors":"T.N. Terentev ,&nbsp;M. Gateshki ,&nbsp;A. Tiwari ,&nbsp;R. de Vries ,&nbsp;V. Jovanovic ,&nbsp;M.D. Ackermann ,&nbsp;I.A. Makhotkin","doi":"10.1016/j.tsf.2024.140588","DOIUrl":"10.1016/j.tsf.2024.140588","url":null,"abstract":"<div><div>Grazing emission X-ray fluorescence (GEXRF) is a unique technique with <span><math><mrow><mi>μ</mi><mi>m</mi></mrow></math></span> spatial resolution that allows elemental characterization with nm depth resolution. Insufficient development of X-ray equipment complicates routine GEXRF measurements in a laboratory environment. We present possibilities of combined X-ray reflectivity and GEXRF measurements using a linear detector and a conventional Cu anode X-ray tube for depth- and elemental-profiles reconstruction of an X-ray waveguide using free form approach. The reconstructed depth profile is verified with the well-established combined X-ray reflectivity and grazing incidence XRF experiment.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140588"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Achieving the large remanent polarization of top heavily doped Al:HfO2 nanofilms embedded with Al-rich interlayers and revealing the underlying phase transition mechanism from atomic structure modelling","authors":"Lulu Yao ,&nbsp;Sambit Das ,&nbsp;Haoliang Liu ,&nbsp;Xin Liu ,&nbsp;Nan Li ,&nbsp;Kai Wu ,&nbsp;Yonghong Cheng ,&nbsp;Vikram Gavini ,&nbsp;Bing Xiao","doi":"10.1016/j.tsf.2024.140596","DOIUrl":"10.1016/j.tsf.2024.140596","url":null,"abstract":"<div><div>Employing the plasma enhanced atomic layer deposition method, the top heavily doped Al:HfO₂ nanofilms embedded with Al-rich interlayers are fabricated with a thickness that varies between 12.8 nm and 13.6 nm, and a nominal dopant concentration of 7.7 mol%. The phase compositions and microstructures of Al:HfO₂ nanofilms are characterized by grazing incidence X-ray diffraction, transmission electron microscope and Time-of-Flight secondary ion mass spectrometry. The ferroelectric properties of top heavily doped Al:HfO₂ nanofilms are optimized by varying the annealing temperature and the distribution of Al-rich strips in HfO₂ matrix. The largest remanent polarization is found to be 60.68 μC/cm² (51.52 μC/cm² corrected by positive up-negative down test) for Si-11123 Al:HfO₂ nanofilm at the optimized annealing temperature of 750℃, and which is comparable to those of ferroelectric HfO₂ films prepared using epitaxial growth method. The large-scale density functional theory (DFT) calculation on a supercell model containing 2592 atoms for a 12 nm-thick Al:HfO₂ nanofilm elucidates that the top heavily doped interlayer mimics the role of capping layer that produces lattice distortions normal to film surface. Meanwhile, other Al-rich strips could create the shearing like atomic distortions in the lateral directions of the nanofilm. A synergistic interplay between those two types of mechanical confinement leads to the prominent ferroelectric polarization in top heavily doped Al:HfO₂ nanofilm. Additional ab-initio molecular dynamics simulations and dipole moment calculations with Berry phase method directly confirm the formation of ferroelectric o-phase in the mechanically confined region in both Al:HfO₂-(001) and Al:HfO₂-(101) nanofilms, and a low phase transition kinetic energy barrier height (∼7.0 kJ/mol) between t- and polar o-phase is predicted. It is also revealed that the resulting dipole moment in Al:HfO₂-(101) nanofilm could exhibit a titled alignment with respect to the surface normal, giving the detectable ferroelectric polarization in experiment.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140596"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of the self-cleaning ability of MoO3 thin films prepared by radio frequency magnetron sputtering using a quartz crystal microbalance technique","authors":"Naoki Shimosako ,&nbsp;Kaito Takahashi ,&nbsp;Hiroshi Sakama","doi":"10.1016/j.tsf.2024.140584","DOIUrl":"10.1016/j.tsf.2024.140584","url":null,"abstract":"<div><div>This study investigated the self-cleaning ability of MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> thin films fabricated by radio frequency magnetron sputtering. With an increase in annealing temperature, the crystal structure of MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> transitioned from an amorphous phase to a <span><math><mi>β</mi></math></span> phase and then to an <span><math><mi>α</mi></math></span> phase. XPS measurements clarified that the atomic ratio exceeded 3.0, indicating that the sample contained excess oxygen. Their self-cleaning abilities were evaluated by measuring the mass reduction of citric acid under UV irradiation using a quartz crystal microbalance. Samples annealed at 400 °C exhibited the highest self-cleaning ability, which was approximately six times greater than that of a commonly used photocatalyst, TiO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. After a decomposition experiment, reflectance spectroscopy revealed that MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> changed to a darker color, indicating a photochromic reaction. These results suggest that the combination of the photochromic reaction and high oxidation power of MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> contributes to its higher self-cleaning ability compared to that of TiO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140584"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nitrogen doped high selectivity amorphous carbon film for high aspect ratio etch process","authors":"Se Jun Park ,&nbsp;Dohyung Kim ,&nbsp;Song Yi Baek ,&nbsp;Changsoo Lee ,&nbsp;Jaehyun Kim ,&nbsp;Sangho Roh ,&nbsp;Jaesung Park ,&nbsp;Sejin Kyung ,&nbsp;Chulhwan Choi","doi":"10.1016/j.tsf.2024.140582","DOIUrl":"10.1016/j.tsf.2024.140582","url":null,"abstract":"<div><div>Nitrogen doped high selectivity amorphous carbon layer (NHS-ACL) was carried in this paper. These experiments showed improved thickness and critical dimension uniformity of 50 % and 54 % respectively and relative selectivity by 10 % in amorphous carbon layer used in hardmasks in semiconductor applications. The incorporation of nitrogen increased the extinction coefficient from 0.402 to 0.503, indicating a reduction in hydrogen content within the film and an enhancement in the hexagonal clustering of carbon atoms. Compressive stress increased from +61 to -120 MPa also shows increase in sp³ bonding in the observed films. These results suggest that NHS-ACL has the potential to be applied in the current and future vertical NAND and dynamic random access memory devices without requiring additional costs, such as retrofitting existing equipment or investing in new facilities for mass production.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140582"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxidized copper seed layer for ultrathin and semi-transparent silver films","authors":"Nikky Chandrakar ,&nbsp;Arun Kumar ,&nbsp;Sonia Rani ,&nbsp;Dhriti Sundar Ghosh","doi":"10.1016/j.tsf.2024.140586","DOIUrl":"10.1016/j.tsf.2024.140586","url":null,"abstract":"<div><div>In this study, we focused on the fabrication of highly transparent and lowly percolated ultrathin silver films on dielectric substrates, which find extensive applications in optoelectronic devices. Incorporating a seed layer is a popular technique for obtaining ultrathin continuous silver (Ag) films with reduced percolation thresholds. Here in this work, we explored the use of sub-nanometric thermally treated copper (Cu) thin film as a seed layer for growing highly transparent and conductive Ag films on silica substrates. Conventionally, the growth of Ag films on oxide substrates results in an island-like structure with large grain sizes and higher root mean square (RMS) surface roughness. However, our findings showed that by incorporating a thermally oxidized Cu seed layer, we could significantly reduce the RMS surface roughness to &lt;1 nm and lower the percolation threshold up to 2 nm. To confirm the layer-by-layer growth of the Ag films, we employed X-ray diffraction analysis, which revealed a reduction in grain size and the formation of a continuous film when thermally oxidized Cu was used as a seed layer. We have also compared the results with Ag films seeded with unoxidized Cu. The incorporation of the thermally oxidized Cu seed layer resulted in Ag films with lower percolation thickness and higher IR transmittance, while the addition of the pristine Cu seed layer produced highly conductive and smoother Ag films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140586"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced optoelectronic performance in dip-coated perovskite stannate transparent conducting thin films through nitrogen doping","authors":"Sreepriya Muraleedharan,&nbsp;Anuradha M Ashok","doi":"10.1016/j.tsf.2024.140592","DOIUrl":"10.1016/j.tsf.2024.140592","url":null,"abstract":"<div><div>CaSnO₃, SrSnO₃ and BaSnO₃ transparent conducting oxides were prepared via dip-coating method on Corning® glass substrates using the solutions of hydrothermally pretreated precursors. In this work, we demonstrate a simple and easily scalable technique to achieve high uniformity in transparent conducting oxides (TCOs) exhibiting optoelectronic properties comparable to the films deposited by vacuum-based physical methods. Also the effect of nitrogen doping on the overall optoelectronic performance of the thin films is investigated based on their figure of merit (FOM). The influence of film thickness on transmittance and electrical conductivity was studied. Thin films exhibited FOM values of 2.5 × 10⁻³ Ω⁻¹, alongside high transmittance (&gt;78 %) and reduced sheet resistance (35 Ω sq⁻¹). These improvements are attributed to enhanced mobility facilitated by the use of hydrothermally treated precursors, ensuring uniform deposition suitable for high-performance optoelectronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140592"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}