Thin Solid Films最新文献_第3页

Macro-scale phase purity and epitaxiality of pulse-laser-deposited Ga2O3 on c-plane sapphire 脉冲激光沉积在 c 平面蓝宝石上的 Ga2O3 的宏观尺度相纯度和外延性

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-03 DOI: 10.1016/j.tsf.2025.140673

Sana Ayyuby, Swagata Bhunia, Santosh Kumar Yadav, Subhabrata Dhar, Suddhasatta Mahapatra

{"title":"Macro-scale phase purity and epitaxiality of pulse-laser-deposited Ga2O3 on c-plane sapphire","authors":"Sana Ayyuby, Swagata Bhunia, Santosh Kumar Yadav, Subhabrata Dhar, Suddhasatta Mahapatra","doi":"10.1016/j.tsf.2025.140673","DOIUrl":"10.1016/j.tsf.2025.140673","url":null,"abstract":"<div><div>In this work, the phase-purity and epitaxial quality of Ga<sub>2</sub>O<sub>3</sub> thin films, grown by pulsed laser deposition, on c-plane sapphire substrates, is systematically investigated, primarily by a combination of different high-resolution X-ray-diffraction-based analyses. We observe that while the oxide grows predominantly in the (<span><math><mrow><mover><mn>2</mn><mo>¯</mo></mover><mn>01</mn></mrow></math></span>) orientation of the monoclinic <span><math><mrow><mi>β</mi></mrow></math></span>-phase, it contains some volume fraction of the hexagonal α-phase, tentatively close to the film-substrate interface. This is in contrast to some earlier observations, where the monoclinic <span><math><mrow><mi>β</mi></mrow></math></span>-phase was found to stabilize atop exactly three monolayers of the α-phase. However, no other polymorphic phases could be identified in the oxide films, irrespective of the film thickness. Phase-purity and epitaxial quality of <span><math><mrow><mi>β</mi></mrow></math></span>-Ga<sub>2</sub>O<sub>3</sub> thin films, on macroscopic length-scales probed by X-ray diffraction techniques, are critical attributes determining the applicability of this ultra-wide-band-gap semiconductor for development of high-performance optoelectronic and microelectronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140673"},"PeriodicalIF":2.0,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Microstructures and mechanical properties of anodic oxides on TiNbSn implant alloys TiNbSn植入合金阳极氧化物的组织与力学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-02 DOI: 10.1016/j.tsf.2025.140674

N. Masahashi , M. Kubota , H. Inoue , Y. Mori , K. Ohmura

{"title":"Microstructures and mechanical properties of anodic oxides on TiNbSn implant alloys","authors":"N. Masahashi , M. Kubota , H. Inoue , Y. Mori , K. Ohmura","doi":"10.1016/j.tsf.2025.140674","DOIUrl":"10.1016/j.tsf.2025.140674","url":null,"abstract":"<div><div>This study explores the microstructure characteristics and mechanical properties of anodic oxides on the TiNbSn alloy (TNS) and compares them to those on pure Ti. After 90 s of anodization, spark discharge occurs in the TNS electrode, whereas pure Ti does not exhibit this phenomenon; instead, intense gas generation is observed at the electrode surface. The anodized TNS develops a rough and thick oxide with a dual-phase consisting of rutile and anatase TiO<sub>2</sub>, with the rutile fraction increasing as anodization progresses. By contrast, anodized Ti forms a thin and glassy layer of anatase TiO<sub>2</sub> characterized by alternating low- and high-density pores in the cross-sectional direction, and the growth rate of anodized Ti is lower than that of anodized TNS. The surface roughness and surface area of the anodized oxides increase with anodization, with both the rate of increase and overall value being higher for anodized TNS as compared to anodized Ti. This vigorous chemical reaction in TNS is attributed to the fact that pentavalent Nb reacts more efficiently with oxygen ions than tetravalent Ti, resulting in the formation of an insulating oxide. Anodized TNS exhibits higher hardness and exfoliation strength than anodized Ti due to the presence of hard and strongly adhered rutile TiO<sub>2</sub>. Potentiodynamic polarization measurements indicate that anodization significantly reduces the passivation current density of TNS as compared to Ti. It is proposed that anodizing reactions differ based on the valence of the Ti or Ti-alloy electrodes, highlighting anodization as an effective method for enhancing the hardness and corrosion resistance of TNS.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140674"},"PeriodicalIF":2.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and characterization of structural, morphology and electrical properties of thermally deposited quinacridone thin films 热沉积喹吖酮薄膜的结构、形貌和电性能的制备与表征

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-31 DOI: 10.1016/j.tsf.2025.140670

Tengyue Zhang , Hiroto Segawa , Rongbin Ye

引用次数: 0

Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals 半导体厚度对碲化铋热电材料与金属界面传递长度法测量接触电阻的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-29 DOI: 10.1016/j.tsf.2025.140668

Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara

{"title":"Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals","authors":"Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara","doi":"10.1016/j.tsf.2025.140668","DOIUrl":"10.1016/j.tsf.2025.140668","url":null,"abstract":"<div><div>The precise measurement and minimization of contact resistance (R<sub>c</sub>) between the thermoelectric semiconductor and electrode are required for enhancing the conversion efficiency and reliability of thermoelectric generation (TEG) devices. The R<sub>c</sub> values are obtained using the conventional transfer length method (TLM); however, the effect of semiconductor thickness on contact resistance remains unexplored. To gain a clearer understanding of this effect, this study fabricated samples with different semiconductor thicknesses and evaluated the specific contact resistivity (ρ<sub>c</sub>) at the bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>)/barrier metals (Ti, Cr, and Ni) interfaces, regardless of the semiconductor dimension and device shape. Our TLM measurements revealed that the ρ<sub>c</sub> of the Bi<sub>2</sub>Te<sub>3</sub>/barrier metals interfaces increased in the order of Ti, Cr, Ni. This study provides accurate data regarding the physical interface properties between Bi<sub>2</sub>Te<sub>3</sub>/barrier metals, enhancing the conversion performance and reliability of TEG devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140668"},"PeriodicalIF":2.0,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Tuning the structural and NO2 gas sensing properties of SnO2 films via In doping 通过In掺杂调整SnO2薄膜的结构和NO2气敏性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-28 DOI: 10.1016/j.tsf.2025.140669

Ali J. Addie , Shatha Sh. Batros , Azhar I. Hassan

{"title":"Tuning the structural and NO2 gas sensing properties of SnO2 films via In doping","authors":"Ali J. Addie , Shatha Sh. Batros , Azhar I. Hassan","doi":"10.1016/j.tsf.2025.140669","DOIUrl":"10.1016/j.tsf.2025.140669","url":null,"abstract":"<div><div>This study investigates the improvement of chemiresistive gas sensor properties in SnO<sub>2</sub> thin films by In doping via scalable spray pyrolysis. By systematically varying the indium concentration from 0 to 7.5 at.%, we found that a doping level of 5 at.% optimally maintains crystal integrity while significantly improving the sensor performance for nitrogen dioxide (NO<sub>2</sub>), a common environmental pollutant. The In-doped sensors achieved a peak sensitivity of 109 at an operating temperature of 200 °C, with a rapid response time of 8 s and a recovery time of 70 s, outperforming the undoped sensors. Structural analysis showed that a 5 at.% doping reduced the grain size from 93 nm to 73 nm, which increased the surface area and improved the dynamics of gas adsorption. In addition, a reduction in surface roughness and a change in the texture coefficient T<sub>(110)</sub> were observed, indicating that the surfaces have become smoother, and the crystal growth orientations have changed, leading to an improvement in electron transport. Doping with In significantly improves the electronic structure and surface reactivity of SnO<sub>2</sub> films. This method enables the production of highly effective NO<sub>2</sub> sensors, which are important for air quality monitoring and environmental protection.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"818 ","pages":"Article 140669"},"PeriodicalIF":2.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic properties of (Ni, Co)-doped tin oxide thin films （Ni, Co）掺杂氧化锡薄膜的磁性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-27 DOI: 10.1016/j.tsf.2025.140657

Yuri Hamayano Lopes Ribeiro , Jime de Souza Sampaio , Vagner Oliveira Santos , Denis Gilbert Francis David , Marcus Vinicius Santos da Silva , Tenilson Souza da Silva , Tercio Neres dos Santos , Jailton Souza de Almeida

{"title":"Magnetic properties of (Ni, Co)-doped tin oxide thin films","authors":"Yuri Hamayano Lopes Ribeiro , Jime de Souza Sampaio , Vagner Oliveira Santos , Denis Gilbert Francis David , Marcus Vinicius Santos da Silva , Tenilson Souza da Silva , Tercio Neres dos Santos , Jailton Souza de Almeida","doi":"10.1016/j.tsf.2025.140657","DOIUrl":"10.1016/j.tsf.2025.140657","url":null,"abstract":"<div><div>Metal-doped tin oxide (SnO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>) is an auspicious material for oxide-based diluted magnetic semiconductors, exhibiting remarkable optical and conductive properties. This study focuses on SnO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> thin films, both undoped and doped with Cobalt (Co) or Nickel (Ni), synthesized via spray pyrolysis — a simple, cost-effective, and versatile technique widely utilized in the fabrication of sensors and photovoltaic devices. The samples have been characterized in terms of their composition, morphology, crystallinity, optical properties, electrical conductivity, and magnetic behavior. The undoped SnO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> films demonstrated a resistivity of approximately 10<sup>−2</sup> <span><math><mrow><mi>Ω</mi><mspace></mspace></mrow></math></span>cm and exhibited soft ferromagnetic behavior attributed to oxygen vacancies. In contrast, the Ni- and Co-doped samples showed significant alterations in their crystalline structure and electrical properties, displaying n-type carrier behavior. The incorporation of dopants enhanced the room-temperature soft ferromagnetism and led to a reduction in optical transmittance, accompanied by shifts in the bandgap energy. Density Functional Theory calculations provided a theoretical foundation for interpreting the experimental results, including the influence of unavoidable impurities like Chlorine. These findings underscore the potential of metal-doped SnO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> thin films for advanced applications in spintronics and optoelectronics.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140657"},"PeriodicalIF":2.0,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143739954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Influence of pretreatments and magnetic field application during electroless plating on the structure and mechanical properties of amorphous Ni-P coatings 化学镀前处理和磁场对非晶Ni-P镀层结构和力学性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-26 DOI: 10.1016/j.tsf.2025.140667

Ruei-Chi Hsu , Hung-Yin Tsai

{"title":"Influence of pretreatments and magnetic field application during electroless plating on the structure and mechanical properties of amorphous Ni-P coatings","authors":"Ruei-Chi Hsu , Hung-Yin Tsai","doi":"10.1016/j.tsf.2025.140667","DOIUrl":"10.1016/j.tsf.2025.140667","url":null,"abstract":"<div><div>Amorphous Ni-P films with pretreatments, different electroless plating times, and magnetic field assistance are deposited onto brass plates and micro-journal bearings. X-ray diffraction results show that Ni-P films have an amorphous structure. X-ray photoelectron spectroscopy is used to investigate the bond structure and chemical composition. The hardness (H), coefficient of friction (CoF), corrosion behavior (E<sub>corr</sub>), micro-journal bearing working life, and fatigue life of the Ni-P coated samples are obtained. The micro-magnetohydrodynamics effect induced by a magnetic field further improves the mechanical properties of Ni-P coatings. In a comparison between as-deposited and rotating magnetic field assistance electroless plating, the H, E<sub>corr</sub>, and fatigue test results respectively increase from 6.78 to 8.62 GPa, from –0.546 to –0.234 V<sub>SCE</sub>, and from 112.8 to 133.3 times. The CoF, wear rate, and micro-journal bearing wear decrease from 0.72 to 0.41, from 1.81 × 10<sup>–6</sup> to 1.25 × 10<sup>–6</sup> g/m, and from 1.50 to 0.88 mg, respectively.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"818 ","pages":"Article 140667"},"PeriodicalIF":2.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

X-ray photoelectron spectroscopy study of Li, Na, and Mg foils: Composition and oxidation kinetics of pristine materials in batteries 锂、钠和镁箔的x射线光电子能谱研究：电池中原始材料的组成和氧化动力学

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-26 DOI: 10.1016/j.tsf.2025.140664

Nuria Plebani , C. Andrea Calderón , M. Victoria Bracamonte , Manuel Otero , Guillermina Luque , Fernando Cometto

{"title":"X-ray photoelectron spectroscopy study of Li, Na, and Mg foils: Composition and oxidation kinetics of pristine materials in batteries","authors":"Nuria Plebani , C. Andrea Calderón , M. Victoria Bracamonte , Manuel Otero , Guillermina Luque , Fernando Cometto","doi":"10.1016/j.tsf.2025.140664","DOIUrl":"10.1016/j.tsf.2025.140664","url":null,"abstract":"<div><div>This study focuses on the detailed characterization of metallic Li, Na, and Mg surfaces under conditions relevant to their use in metal-based batteries. X-ray Photoelectron Spectroscopy (XPS) was employed to analyze and compare surface compositions before and after manual scraping, enabling the identification of species present on the metal surfaces prior to their integration into cell systems. The study also included sequential sputtering processes to investigate the internal composition of surface layers, providing insights into the material's depth profile. Oxidation processes were examined by analyzing the sputtered surfaces at various time intervals, revealing the mechanisms and kinetics of oxidation for each material in the ultra-high vacuum environment typical of XPS equipment. These findings are crucial for understanding the intrinsic properties and chemical stability of the primary materials, offering valuable insights into their stability and performance in rechargeable battery applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140664"},"PeriodicalIF":2.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deposition of SnS thin film using tetrakis(dimethylamido)tin(IV) and improvement of crystallinity by post annealing 四（二甲酰胺）锡（IV）沉积SnS薄膜及退火后结晶度的改善

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-26 DOI: 10.1016/j.tsf.2025.140666

Dowwook Lee , Hyeongtag Jeon

{"title":"Deposition of SnS thin film using tetrakis(dimethylamido)tin(IV) and improvement of crystallinity by post annealing","authors":"Dowwook Lee , Hyeongtag Jeon","doi":"10.1016/j.tsf.2025.140666","DOIUrl":"10.1016/j.tsf.2025.140666","url":null,"abstract":"<div><div>Two-dimensional (2D) tin sulfides are promising materials to overcome the limitations of transition metal dichalcogenides (TMDCs). For tin sulfide to replace TMDCs, it must exhibit high crystallinity. Tin sulfide deposited by atomic layer deposition (ALD) tends to have low crystallinity due to the low deposition temperature. To improve crystallinity, methods such as pre-treatment, annealing, and seed layers have been studied, with annealing is most effective. In this study, we evaluated the effect of in-situ annealing on tin monosulfide (SnS) thin films deposited by ALD. Various structural parameters were calculated using grazing incidence X-ray diffraction (GI-XRD), and by comparing these values, we confirmed that crystallinity of the SnS thin films improved after in-situ annealing. Phase purity was confirmed through Raman spectroscopy. The 2D layered structure was observed with transmission electron microscopy (TEM), while Rutherford backscattering spectrometry (RBS) was used to confirm stoichiometry. The bonding states of the thin films were analyzed with X-ray photoelectron spectroscopy (XPS), and optical properties were confirmed using ultraviolet-visible spectroscopy (UV-vis) and ultraviolet photoelectron spectroscopy (UPS). Lastly, Hall measurements were performed to compare the electrical characteristics of as-deposited and annealed SnS thin films. Our results show that in-situ annealing effectively improves the crystallinity of SnS thin films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140666"},"PeriodicalIF":2.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143739953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced photoelectrochemical performance of Zr-doped BiVO4 photoanode deposited by co-sputtering 共溅射法制备zr掺杂BiVO4光阳极，提高其光电化学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-24 DOI: 10.1016/j.tsf.2025.140665

Shukur Gofurov , Daryl Ide , Lingga Ghufira Oktariza , Muhammad M. Islam , Shigeru Ikeda , Takeaki Sakurai

{"title":"Enhanced photoelectrochemical performance of Zr-doped BiVO4 photoanode deposited by co-sputtering","authors":"Shukur Gofurov , Daryl Ide , Lingga Ghufira Oktariza , Muhammad M. Islam , Shigeru Ikeda , Takeaki Sakurai","doi":"10.1016/j.tsf.2025.140665","DOIUrl":"10.1016/j.tsf.2025.140665","url":null,"abstract":"<div><div>Zirconium (Zr) doped bismuth vanadate (BiVO<sub>4</sub>) thin films were deposited on the fluorine-doped tin oxide substrate using a co-sputtering method to enhance the photoelectrochemical (PEC) performance. The radio frequency (RF) power of the ZrO<sub>2</sub> target, serving as a Zr source, was varied from 0 to 75 W to incorporate different amounts of Zr into BiVO<sub>4</sub>, while RF power of the BiVO<sub>4</sub> target was maintained at 75 W. The presence of Zr in varying ratios within BiVO<sub>4</sub> thin film was confirmed by X-ray photoelectron Spectroscopy. Our study shows that the incorporation of a small amount of Zr into the monoclinic BiVO<sub>4</sub> structure improved the overall crystallinity of the thin film. However, higher levels of Zr doping led to a phase transition from the monoclinic scheelite to the tetragonal scheelite BiVO<sub>4</sub> structure, accompanied by the formation of other phase impurities, including the ZrV<sub>2</sub>O<sub>7</sub> phase. Among the samples, the one deposited using 25 W RF power for the ZrO<sub>2</sub> target demonstrated the highest photocurrent, which was approximately five times higher than that of undoped BiVO<sub>4</sub>. This enhancement is attributed to improved crystallinity, reduced electron–hole recombination, and optimized surface reaction areas by tuning grain sizes. Additionally, both undoped BiVO<sub>4</sub> and Zr-doped BiVO<sub>4</sub> photoanodes exhibited good stability during PEC reactions.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140665"},"PeriodicalIF":2.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0