Thin Solid Films最新文献

{"title":"Polarization evolution in ferroelectric thin films at different electrode interfaces without strain","authors":"Sirui Zhang,&nbsp;Puqi Hao,&nbsp;Borui Wang,&nbsp;Shuaibing Gao,&nbsp;Fei Yan,&nbsp;Min Liao","doi":"10.1016/j.tsf.2025.140779","DOIUrl":"10.1016/j.tsf.2025.140779","url":null,"abstract":"<div><div>Ferroelectric materials show significant potential for application in ferroelectric random access memory, sensors, and transducers. With the demand for electronic devices scaling down in size, ferroelectrics are being increasingly produced as nanoscale films. However, in ultrathin films, polarization tends to decrease significantly due to depolarization fields caused by incomplete charge screening at the interfaces, which poses challenges for their integration into electronic devices. To address this, we investigated the effects of different electrode and film interfaces, including Nb:SrTiO₃/PbTiO₃ (Nb:STO/PTO), SrRuO₃/PbTiO₃ (SRO/PTO), La_0.7Sr_0.3MnO₃/PbTiO₃ (LSMO/PTO), and LaCoO₃/PbTiO₃ (LCO/PTO). Using aberration-corrected scanning transmission electron microscopy, we analysed these interfaces and found that the PTO films grown on the LSMO and LCO electrode exhibited a sharp increase in polarization, while the PTO film grown on SRO exhibited a marked decrease. Consequently, LSMO/PTO was proven to have the highest polarization, followed by Nb:STO/PTO, with SRO/PTO having the lowest. This behaviour was further confirmed through piezoresponse force microscopy. These findings indicate that ferroelectric polarization at epitaxial interfaces can be fine-tuned through atomic-level control of the interface structure, yielding possibilities for designing nanoscale ferroelectric devices with interfacial properties.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140779"},"PeriodicalIF":2.0,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Control of Single-Crystalline Cobalt Oxide Thin Films Grown by Pulsed Laser Deposition","authors":"Maximilian Mihm,&nbsp;Christian Holzmann,&nbsp;Johannes Seyd,&nbsp;Aladin Ullrich,&nbsp;Helmut Karl,&nbsp;Manfred Albrecht","doi":"10.1016/j.tsf.2025.140776","DOIUrl":"10.1016/j.tsf.2025.140776","url":null,"abstract":"<div><div>Functional oxides are highly fascinating materials driving much research in chemistry, physics, and materials science. In this study, we have epitaxially grown CoO and Co<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> thin films on SrTiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>(001) and MgO(001) substrates by pulsed laser deposition. By choosing the right deposition parameters such as substrate temperature and oxygen partial pressure, we are able to control the oxide phase and therefore the oxidation state of the transition metal controlling its physical properties. Structural analysis revealed a cube-on-cube orientation for both oxide phases with respect to the substrates and confirmed that all grown films are single-phase and single-crystalline. In addition, post-annealing in oxygen atmosphere allows to change the cobalt oxide phase from CoO to Co<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>. Furthermore, magnetic measurements indicated a Néel temperature of about <span><math><mrow><mn>45</mn><mspace></mspace></mrow></math></span>K for Co<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> thin films which is close to the reported bulk value.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140776"},"PeriodicalIF":2.0,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144926125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thin palladium nanograins film for efficient and selective hydrogen sensor","authors":"Joanna Rymarczyk,&nbsp;Izabela Stępińska,&nbsp;Mirosław Kozłowski","doi":"10.1016/j.tsf.2025.140778","DOIUrl":"10.1016/j.tsf.2025.140778","url":null,"abstract":"<div><div>The development of reliable hydrogen sensors is pivotal for safety in hydrogen technologies. This paper presents the palladium material's ability for hydrogen sensing applications. The thin palladium nanograins films (Pd film) composed of nanograins show highly selective properties towards hydrogen. The films were obtained by palladium acetate evaporation via the Physical Vapor Deposition method. Scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR) were employed for studying the topography and morphology of films. The FTIR spectra demonstrated a total decomposition of Pd acetate during the deposition process while the TEM results received at high resolution mode confirmed that fine Pd nanograins with face-centred cubic (fcc) crystal structure were created. The sensing properties have been studied for different hydrogen concentrations from 50 ppm to 20,000 ppm in ambient conditions. The Pd nanograin films exhibited high sensitivity to hydrogen at concentrations as low as 0.005% and excellent selectivity against methane and ammonia. During the measurements, a decrease in the electrical resistance of films was observed. The formation of PdH_x was responsible for this phenomenon and it was proved by the in-situ XRD studies. These findings suggest that Pd nanograin films are promising for hydrogen sensor technology.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140778"},"PeriodicalIF":2.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144989307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extending the two-substrate method for characterization of thermo-mechanical properties to polymer thin films with non-uniform thickness","authors":"Y. Meier ,&nbsp;R. Estevez ,&nbsp;C. Licitra ,&nbsp;D. Mariolle ,&nbsp;L. Vignoud","doi":"10.1016/j.tsf.2025.140775","DOIUrl":"10.1016/j.tsf.2025.140775","url":null,"abstract":"<div><div>In the context of a growing interest in characterizing the thermoelastic properties of polymer thin films, namely the biaxial modulus (<span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>f</mi></mrow></msub></math></span>) and the thermal expansion coefficient (TEC), accurate estimations of their mechanical response is mandatory. We present a method based on the measurement of temperature-dependent curvature of a polymer film deposited on two different substrates (two-substrate method) to identify these characteristics (<span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>f</mi></mrow></msub></math></span> and TEC). The interest and feasibility are illustrated for three different thermoset films (epoxide resins) exhibiting a non-uniform film thickness. The film thicknesses are in the micrometer range. The predictions with the proposed method are cross-compared with temperature-dependent ellipsometry, atomic force microscopy (AFM), and nanoscale dynamic mechanical analysis (nDMA). The thermal expansion coefficients estimated from ellipsometry data are in agreement with the curvature method. AFM nano-DMA data show some discrepancy, but confirm the range of values for <span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>f</mi></mrow></msub></math></span>. A sensitivity analysis shows a larger dependence of the method on the experimental uncertainties in the case of polymer films on semiconductor substrates compared to the case of metal or oxide films. This originates from the larger thermoelastic contrast. The study also shows quantitatively how the accuracy of the measurement of curvature is critical and that the measurement of the spatial distribution of the radial and angular curvatures is necessary when the film thickness distribution is non-uniform. Quantitative limits are also provided for using the proposed method. In conclusion, the study proposed practical guidelines and theoretical advances to improve the curvature method and apply it to a wider variety of materials deposited in the form of films on substrates.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140775"},"PeriodicalIF":2.0,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144926124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Copper oxide by spin-coating: Cost-effective deposition and post-annealing process for thin films with modulated Cu2O/CuO phase ratio","authors":"Wafae El Berjali ,&nbsp;Victor Colas ,&nbsp;Sidi Ould Saad Hamady ,&nbsp;Sha Shiong Ng ,&nbsp;Nur Atiqah Hamzah ,&nbsp;Pascal Boulet ,&nbsp;David Horwat ,&nbsp;Jean-François Pierson","doi":"10.1016/j.tsf.2025.140762","DOIUrl":"10.1016/j.tsf.2025.140762","url":null,"abstract":"<div><div>Copper oxide, in its cuprous (<span><math><mrow><msub><mrow><mi>Cu</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>O</mi></mrow></math></span>) and cupric (CuO) phases, is a promising material for energy and sensor applications due to its abundance, low cost, non-toxicity, and advantageous optoelectronic properties. However, its application in optoelectronic devices is limited by the lack of environmentally sustainable, cost-effective deposition methods capable of precise phase control. This work presents a spin-coating deposition method that utilizes non-toxic precursors in a cost-effective and scalable process. The method comprises two critical stages: (1) optimization of the spin-coating process by varying rotation speed (2000–6000 rpm) and cycle number (1–14 cycles) to produce homogeneous thin films with controlled thickness (20–175 nm) and low surface roughness (5 nm); and (2) post-annealing to achieve phase-specific control. Annealing at <span><math><mrow><mn>300</mn><mspace></mspace><mo>°</mo><mi>C</mi></mrow></math></span> induces predominantly <span><math><mrow><msub><mrow><mi>Cu</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>O</mi></mrow></math></span>, while biphased films are obtained at lower or higher temperatures. Optical and electrical characterization reveals a direct bandgap of 1.88 eV for <span><math><mrow><msub><mrow><mi>Cu</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>O</mi></mrow></math></span>-dominant films and all films exhibit p-type conductivity, carrier mobility of 17–30 <span><math><mrow><msup><mrow><mi>cm</mi></mrow><mrow><mn>2</mn></mrow></msup><msup><mrow><mi>V</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mrow><mi>s</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span>, and carrier concentrations of <span><math><mrow><mn>8</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>13</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>15</mn></mrow></msup><mspace></mspace><msup><mrow><mi>cm</mi></mrow><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></math></span>. This cost-effective and scalable method demonstrates precise phase control and material properties, highlighting copper oxide’s potential for next-generation optoelectronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140762"},"PeriodicalIF":2.0,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144893471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced mechanical and corrosion properties of electroless Ni-P coatings with multi-walled carbon nano tubes incorporation and annealing treatment","authors":"Ambikesh Kumar Srivastwa ,&nbsp;Ishita Koley ,&nbsp;Jhumpa De ,&nbsp;Rajat Subhra Sen ,&nbsp;Gautam Majumdar","doi":"10.1016/j.tsf.2025.140777","DOIUrl":"10.1016/j.tsf.2025.140777","url":null,"abstract":"<div><div>Electroless Ni-P-CNT coating finds its application in aerospace, automotive, electronics, oil and gas, medical, defence and marine industries for its superior mechanical, tribological, thermal and electro-chemical properties. The different poly-alloy and composite coatings are also getting developed for purely academic researches. The physical, electrochemical, and mechanical properties of the electroless Ni-P coating were improved by adding multi-walled carbon nano tubes (MWCNT) to the electroless Nickel-Phosphorous (Ni-P) coating. Further, to examine the influence of the annealing temperature on the characteristics of both electroless Ni-P alloy and Ni-P-CNT composite coatings deposited onto copper substrate, the as-coated samples were subjected to heat treatment at various temperatures. To evaluate their microstructural, mechanical and electrochemical properties, the coatings were studied using Scanning Electron microscopy, energy-dispersive X-ray analysis, X-ray diffraction, Vickers microhardness testing, and potentiodynamic polarization. The microhardness and corrosion rate of the electroless Ni-P coating were improved from 587 ± 76 VHN_10gf to 784 ± 78 VHN_10gf and from 19.46 ± 0.27 to 9.97 ± 0.22 μm/Y. respectively by the inclusion of CNTs into the Ni-P coating matrix. The inclusion of CNTs in the Ni-P matrix causes the formation of a barrier layer to enhance the passivation of the electroless Ni-P coating, resulting in an increase in the corrosion resistance. The addition of CNTs to the Ni-P matrix has reduced the phosphorus content resulting improved crystalline behaviour and high hardness. These properties were further improved after annealing at 400 °C, possibly due to solid solution strengthening, precipitation hardening, and generation of an enhanced phosphorous surface, resulting in the formation of an electrochemically inactive nickel film. Moreover, a hardness value of 1119 ± 85 VHN_10gf has been achieved by electroless Ni-P-CNT coating after annealing at 400 °C temperature.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140777"},"PeriodicalIF":2.0,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144907579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complementary memristor based on Al/TiO2/graphene oxide/indium tin oxides Resistive Random Access Memory by spin-coating techniques","authors":"Jinyan Pan ,&nbsp;Qiao Huang ,&nbsp;Ruotong He ,&nbsp;Tiejun Li ,&nbsp;Hongyang He ,&nbsp;Lingsen Yan ,&nbsp;Zhenping Wang ,&nbsp;Yan Liu ,&nbsp;Jing Li ,&nbsp;Yunlong Gao","doi":"10.1016/j.tsf.2025.140774","DOIUrl":"10.1016/j.tsf.2025.140774","url":null,"abstract":"<div><div>The resistive properties and mechanisms of devices with different structures were investigated by fabricating TiO₂ and Graphene Oxide (GO) films on Indium Tin Oxides (ITO)conductive glass using spin-coating techniques. The results show that our prepared devices can undergo SET/RESET under different voltages and exhibit unique resistive change characteristics. In addition, we found a complementary resistive switching (CRS) behavior in the Al/TiO₂/GO/ITO structured devices, similar to the memristor which is reverse-series connection of Al/TiO₂/ITO and Al/GO/ITO. And its resistive behavior is analogous to neuronal firing processes-depolarizing and polarizing behavior. Furthermore, the resistance is modulated by constant voltage and the stimulus gets gradual resistance increase (long-term depression, LTD), and causes progressive resistance decrease (long-term potentiation, LTP). This study provides a reference for the application of the synergistic combination of CRS behavior and tunable resistance states enables a dual-path approach for implementing neuronal and synaptic functionalities in bio-inspired electronics, offering a reference framework for complementary memristor-based bionic neurons that broadens the application scope of Resistive Random Access Memory.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140774"},"PeriodicalIF":2.0,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144890744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Substrate-induced modulation of metal-insulator transition and low-temperature charge transport in radio frequency sputtered VO2 films","authors":"Akash Kumar Singh ,&nbsp;Suman Kumari ,&nbsp;H.K. Singh ,&nbsp;P.K. Siwach","doi":"10.1016/j.tsf.2025.140773","DOIUrl":"10.1016/j.tsf.2025.140773","url":null,"abstract":"<div><div>In this study, we investigate the influence of substrate type on the phase transition behavior and charge transport characteristics of polycrystalline VO₂ films grown by Radio Frequency (RF) magnetron sputtering of a V₂O₅ target in pure argon ambient at ∼700 °C. The films were deposited on five single-crystal substrates namely, Yttria Stabilized Zirconia [YSZ (001)], Lanthanum Aluminate [LAO (100)], Magnesium Oxide [MgO (100)], c-plane Sapphire [ALO (0001)], and Zinc Oxide [ZnO (0001)]. Structural and Raman analysis confirmed the dominance of the VO₂ phase with minor secondary V-O phases. Surface morphology revealed substrate-dependent uniformity and grain structure. Films on YSZ (001), LAO (100), and MgO (100) exhibited a sharp and reversible Insulator-Metal/Metal-Insulator transition (IMT/MIT) around ∼(339–341 K/66–68 °C), with narrow Thermal hysteresis (T_H) varies from ∼(4–8 K) and a two-order resistivity change. In contrast, films on ALO (0001) and ZnO (0001) showed broader transitions, lower transition temperatures (T_IM/T_MI ∼331–337 K/58–64 °C), and reduced resistivity change, particularly on ZnO (0001), which displayed a single-order transition with a larger hysteresis (∼10 K). The Temperature Coefficient of Resistance/Resistivity (TCR) showed trends consistent with resistivity behavior, reaching values as high as −98 % K^-1 near the IMT/MIT. Activation energy (E_A) in the insulating phase varied significantly with substrate, from ∼0.221 eV (MgO) to ∼0.395 eV (ZnO), and low-temperature conduction (300 K ≤ <em>T</em> ≤ 4.2 K) revealed a crossover from Efros–Shklovskii Variable Range Hopping (ES-VRH) on symmetric substrates [YSZ (001), LAO (100), MgO (100)] to Nearest-Neighbor Hopping (NN<img>H) on ALO (0001) and ZnO (0001). These results underline the critical role of substrate symmetry and orientation in tailoring the phase transition dynamics and transport mechanisms in VO₂ films, providing useful guidelines for substrate-engineered VO₂-based device applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140773"},"PeriodicalIF":2.0,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144890745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of in-situ crystallization on the properties of sputtered silicon doped indium oxide thin-films for transparent electrode applications","authors":"K. Jenifer ,&nbsp;D. Catherine Jesinthamary ,&nbsp;Riza Paul ,&nbsp;S. Arulkumar ,&nbsp;S. Parthiban ,&nbsp;G. Balaji","doi":"10.1016/j.tsf.2025.140771","DOIUrl":"10.1016/j.tsf.2025.140771","url":null,"abstract":"<div><div>Highly transparent and conducting, silicon doped indium oxide (SIO) thin-films were deposited at low sputtering power on in-situ heated glass substrates using radio frequency magnetron sputtering. The influence of substrate temperature on structural, optical, electrical and morphological properties of the SIO thin films were investigated. The study revealed that substrate heating significantly enhance the optoelectrical properties even under conditions of low sputtering power and thickness. The optimized SIO film exhibited good visible light transmittance (&gt; 79 %), low sheet resistance (∼12 Ω/⬜) and high FOM (∼ 8 × 10^–3/Ω). The results highlight the potential of SIO thin films as transparent electrodes in various optoelectronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140771"},"PeriodicalIF":2.0,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144863916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mitigation of delamination of epitaxial large-area boron nitride for semiconductor processing","authors":"Jakub Rogoża,&nbsp;Jakub Iwański,&nbsp;Katarzyna Ludwiczak,&nbsp;Bartosz Furtak,&nbsp;Aleksandra Krystyna Dąbrowska,&nbsp;Mateusz Tokarczyk,&nbsp;Johannes Binder,&nbsp;Andrzej Wysmołek","doi":"10.1016/j.tsf.2025.140770","DOIUrl":"10.1016/j.tsf.2025.140770","url":null,"abstract":"<div><div>Hexagonal boron nitride (hBN) is a promising material for semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is necessary to grow large-area layers on the wafer-scale. For this purpose, chemical vapor deposition methods are highly preferable. However, in the case of epitaxial BN, its fragility and susceptibility to delamination and fold formation during wet processing, such as lithography, present significant challenges to its integration into device fabrication. In this work, we introduce a controlled delamination and transfer method that effectively prevents the layer from degradation, allowing for multi-step lithographic processes. This approach is applicable to BN layers across a broad thickness range, from tens to hundreds of nanometers, and ensures compatibility with standard photolithographic techniques without compromising the material’s intrinsic properties. By addressing key processing challenges, this method paves the way for integrating epitaxial BN into advanced semiconductor and optoelectronic technologies.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140770"},"PeriodicalIF":2.0,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144858385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}