Thin Solid Films最新文献_第4页

Lambert meets van der Pauw: Analytical expressions for fast numerical computation of dual configuration sheet resistance Lambert满足van der Pauw：双构型薄板阻力快速数值计算的解析表达式

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-22 DOI: 10.1016/j.tsf.2025.140663

Benny Guralnik , Ole Hansen , Frederik Westergaard Østerberg , Kristoffer Gram Kalhauge , Mikkel Fougt Hansen , Alberto Cagliani

{"title":"Lambert meets van der Pauw: Analytical expressions for fast numerical computation of dual configuration sheet resistance","authors":"Benny Guralnik , Ole Hansen , Frederik Westergaard Østerberg , Kristoffer Gram Kalhauge , Mikkel Fougt Hansen , Alberto Cagliani","doi":"10.1016/j.tsf.2025.140663","DOIUrl":"10.1016/j.tsf.2025.140663","url":null,"abstract":"<div><div>The van der Pauw theorem [<em>van der Pauw,</em> L.<em>J. 1958; Philips Res. Rep 13 no 1, 1–9</em>] enables accurate determination of sheet resistance irrespective of either sample or probing geometry. While van der Pauw's identities form the theoretical cornerstone of electrical four-point probe metrology, the formulae are implicit with respect to sheet resistance, enabling to date only numerical solutions or approximations. Here we briefly review former approaches of solving the van der Pauw identities, recognize the problem as root finding of a trinomial, introduce four alternative calculation schemes, and evaluate both the legacy and the proposed approaches in terms of both their accuracy and time complexity. We demonstrate that an iterative solution based on Lambert's transcendental equation yields a thousand-fold acceleration with respect to a numerical solution of van der Pauw's original formula, with no loss of numerical accuracy. We demonstrate that this acceleration remains significant within the scope of current-in-plane tunnelling measurements of magnetic tunnel junctions, where ∼10<sup>3</sup> individual solutions of the van der Pauw identity are typically required during the acquisition of a single measurement point.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140663"},"PeriodicalIF":2.0,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical properties of cadmium doped tin oxide film and activated carbon composite electrode 镉掺杂氧化锡膜与活性炭复合电极的电化学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-19 DOI: 10.1016/j.tsf.2025.140662

Harisha Kumar K , S M Dharmaprakash

{"title":"Electrochemical properties of cadmium doped tin oxide film and activated carbon composite electrode","authors":"Harisha Kumar K , S M Dharmaprakash","doi":"10.1016/j.tsf.2025.140662","DOIUrl":"10.1016/j.tsf.2025.140662","url":null,"abstract":"<div><div>In our previous study, we demonstrated the enhanced conductivity and structural properties of cadmium-doped tin oxide thin films synthesized using the pulsed laser deposition technique. While this work established the fundamental improvements introduced by Cd doping, the potential of these films as electrode materials for supercapacitors remained unexplored. Building on this foundation, the present study investigates the electrochemical performance of Cd:SnO₂ thin films in composite electrodes. Cadmium-doped tin oxide and pure tin oxide thin films were fabricated on glass substrates using the pulsed laser deposition technique, resulting in polycrystalline films with a tetragonal rutile structure. Cd doping significantly reduced the electrical resistance of the films from 7.9 × 10³ Ω/□ to 300.9 Ω/□. These Cd:SnO₂ films were further utilized to develop electrode materials by combining them with activated carbon and carbon black in an 85:15 ratio. Electrochemical studies in a three-electrode system revealed that the Cd:SnO₂/Carbon composite electrodes exhibited superior performance compared to undoped SnO₂/Carbon electrodes. The specific capacitance of the Cd:SnO₂/Carbon composite increased markedly from 25.58 ± 1.3 Fg⁻¹ to 71.62 ± 3.6 Fg⁻¹. Further analysis using galvanometric charge-discharge and electrochemical impedance spectroscopy confirmed significant enhancements in energy storage properties. The Cd:SnO₂/Carbon composite achieved an energy density of 12.35 ± 0.6 Whkg⁻¹ and a power density of 1003.41 ± 50 Wkg⁻¹, surpassing the performance metrics of many reported SnO₂-based systems. This study highlights the critical role of Cd doping in improving both the conductivity and electrochemical performance of SnO₂-based electrodes, providing insights into their potential for next-generation high-performance supercapacitor applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"818 ","pages":"Article 140662"},"PeriodicalIF":2.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural and functional features of photoactive lead sulfide films with iodine-containing impurity phases 含碘杂质相光活性硫化铅薄膜的结构和功能特征

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-17 DOI: 10.1016/j.tsf.2025.140654

L.N. Maskaeva , A.V. Beltseva , E.V. Mostovshchikova , V.I. Voronin , O.S. Eltsov , I.V. Baklanova , P.N. Mushnikov , K.S. Makaruk , V.F. Markov

{"title":"Structural and functional features of photoactive lead sulfide films with iodine-containing impurity phases","authors":"L.N. Maskaeva , A.V. Beltseva , E.V. Mostovshchikova , V.I. Voronin , O.S. Eltsov , I.V. Baklanova , P.N. Mushnikov , K.S. Makaruk , V.F. Markov","doi":"10.1016/j.tsf.2025.140654","DOIUrl":"10.1016/j.tsf.2025.140654","url":null,"abstract":"<div><div>The lead sulfide films obtained by the chemical bath deposition from the solutions contained KMnO<sub>4</sub>, NH<sub>4</sub>I or their combination are studied. The kinetic studies of the transformation of lead salt into sulfide under conditions of spontaneous nucleation of the solid phase show the inhibitory effect of the additives the rate of the process and resulting in a decrease of the thickness of PbS films from 640 to 370 nm. A comprehensive analysis of the composition, morphology and structure of the synthesized layers was carried out using scanning electron and atomic force microscopy, energy dispersive analysis, Auger spectroscopy and X-ray diffraction. The average content of the main elements Pb, S, I, O in the films and their distribution over the thickness were established. From the features of changes in the lattice parameter, crystallographic orientation, the magnitude of microdeformations, internal microstresses, and coherent scattering regions, the “critical” character of concentration of KMnO<sub>4</sub> equal to 1 mM was revealed. From measurements of the Raman and infrared transmission spectra, the formation of I<sub>2</sub>O<sub>5</sub> or I<sub>2</sub>O<sub>4</sub> on the surface of the films is found. A synergistic effect of the combination of KMnO<sub>4</sub> and NH<sub>4</sub>I in reaction bathes caused by the formation of photoactive phases of iodine oxides and resulting in increasing the voltage sensitivity of PbS films synthesized has been revealed.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"817 ","pages":"Article 140654"},"PeriodicalIF":2.0,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lead selenide thin films: From first principles to in situ crystalline thin film growth by thermal evaporation 硒化铅薄膜：从第一性原理到热蒸发原位结晶薄膜生长

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-16 DOI: 10.1016/j.tsf.2025.140661

Mingyang Yu, Quanjiang Lv, Tianliang Feng, Zhicheng Ye, Xu Huang, Siwei Liu, Ziwei Xu, Guiwu Liu, Guanjun Qiao, Junlin Liu

{"title":"Lead selenide thin films: From first principles to in situ crystalline thin film growth by thermal evaporation","authors":"Mingyang Yu, Quanjiang Lv, Tianliang Feng, Zhicheng Ye, Xu Huang, Siwei Liu, Ziwei Xu, Guiwu Liu, Guanjun Qiao, Junlin Liu","doi":"10.1016/j.tsf.2025.140661","DOIUrl":"10.1016/j.tsf.2025.140661","url":null,"abstract":"<div><div>Lead selenide (PbSe) thin films were prepared on glass substrates using vacuum thermal evaporation at various substrate temperatures. The structural, optical, and electrical properties of the thin films, along with molecular thermodynamic calculations, were comprehensive investigated and analyzed. Morphological investigations, both surface and cross-sectional, indicated an evolution in PbSe thin films growth from an amorphous phase to two-dimensional layered structures, and subsequently to mixed states, culminating in a columnar crystal morphology. At a substrate temperature of 300 °C, the PbSe thin films exhibited electrical resistivity, mobility, and carrier concentration values of 1.2 × 10<sup>–2</sup> Ω·cm, 101 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, and 9.09 × 10<sup>18</sup> cm<sup>-3</sup>, respectively. To further elucidate the influence of temperature on the stability of the structure, molecular dynamics simulation calculations were performed. The results indicate that molecular thermal motion at high temperatures significantly alters both the internal structure and energy state of the material. This study advances the understanding of the thermal evaporation process, contributing to the development of high-performance PbSe infrared detectors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"818 ","pages":"Article 140661"},"PeriodicalIF":2.0,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving tunable work function in MoOx thin films: A key to low-cost, high-performance organic electronics 在MoOx薄膜中实现可调谐的工作功能：低成本，高性能有机电子的关键

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-16 DOI: 10.1016/j.tsf.2025.140659

Qi Yao , Shaohui Li , Liwen Dong , Pengfei Gu , Xianwen Liu , Feng Wang , Guangcai Yuan , Zhinong Yu

{"title":"Achieving tunable work function in MoOx thin films: A key to low-cost, high-performance organic electronics","authors":"Qi Yao , Shaohui Li , Liwen Dong , Pengfei Gu , Xianwen Liu , Feng Wang , Guangcai Yuan , Zhinong Yu","doi":"10.1016/j.tsf.2025.140659","DOIUrl":"10.1016/j.tsf.2025.140659","url":null,"abstract":"<div><div>MoO<em><sub>x</sub></em> (Molybdenum oxide) thin films, as the interfacial modification layer of low-cost source-drain electrode materials, are considered the most promising material to solve electrical issues hindering the practical applications of organic thin-film transistors. However, precise control of the MoO<em><sub>x</sub></em> work function remains a challenge for improving the electronic characteristics of organic thin-film transistors (OTFTs). In this work, we demonstrate universal strategies to achieve tunable work function of MoO<em><sub>x</sub></em> thin films by adjusting O<sub>2</sub>/(O<sub>2</sub>+Ar) gas ratio during Mo deposition or by varying oxygen plasma treatment time on Mo thin films. The work function of MoO<em><sub>x</sub></em> thin films increased from 4.85 eV to 5.80 eV by properly tuning O<sub>2</sub>/(O<sub>2</sub>+Ar) gas ratio. Moreover, as the oxygen treatment time increasing to 45 s, the work function of the MoO<em><sub>x</sub></em> thin films undergoes an increase from 4.66 eV to 5.30 eV. The observed rise in work function is attributed to the formation of Mo atom higher oxidation states within the MoO<em><sub>x</sub></em> thin films. Compared with non-plasma treatment OTFTs, the plasma-treated one shows excellent performance due to the ohmic contact between source-drain electrode and organic semiconductor interface layers. The present study is instructive for exploring interfacial modification layer materials with tunable work function, and manufacturing low-cost, high-performance and commercialized OTFT devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"817 ","pages":"Article 140659"},"PeriodicalIF":2.0,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication process analysis on Sb2(SxSe1-x)3-based material properties and solar cell performance via machine learning 基于机器学习的Sb2(sxs1 -x)3基材料性能和太阳能电池性能制备工艺分析

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-15 DOI: 10.1016/j.tsf.2025.140660

A․N․ Olimov , T․M․ Razykov , K․M․ Kuchkarov , B․A․ Ergashev , A․X․ Shukurov , U․K․ Makhmanov , A․A․ Mavlonov

{"title":"Fabrication process analysis on Sb2(SxSe1-x)3-based material properties and solar cell performance via machine learning","authors":"A․N․ Olimov , T․M․ Razykov , K․M․ Kuchkarov , B․A․ Ergashev , A․X․ Shukurov , U․K․ Makhmanov , A․A․ Mavlonov","doi":"10.1016/j.tsf.2025.140660","DOIUrl":"10.1016/j.tsf.2025.140660","url":null,"abstract":"<div><div>The optimization of the fabrication process of Sb<sub>2</sub>(S<em><sub>x</sub></em>Se<sub>1-</sub><em><sub>x</sub></em>)<sub>3</sub> thin-films and studying the interplay between the parameters of their growth conditions to improve the performance of solar cells using traditional experimental methods requires more time and resources. In this work, we explore the application of machine learning (ML) techniques using the experimental data from peer-reviewed reports to optimize the fabrication process of Sb<sub>2</sub>(S<em><sub>x</sub></em>Se<sub>1-</sub><em><sub>x</sub></em>)<sub>3</sub> thin films, targeting to enhance the device performance. The optimized ML models demonstrate high accuracy in predicting the power conversion efficiency with a root mean square error of 1% and a Pearson coefficient of 0.9. Furthermore, the Shapley additive explanations method is employed to rank the fabrication parameters that have an impact on the solar cell performance. Finally, the results obtained are validated through their consistency with theory and experimental verification.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"817 ","pages":"Article 140660"},"PeriodicalIF":2.0,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modelling the optical properties of magnesium thin films determined by ellipsometry and reflectometry 用椭偏法和反射率法对镁薄膜的光学性质进行了建模

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-13 DOI: 10.1016/j.tsf.2025.140658

Á.Bueno García , P. Prieto , I.J. Ferrer , F. Leardini , G. Tabares , J.R. Ares , N. Gordillo

引用次数: 0

Rotary-type atomic layer deposition of aluminum oxide coating on micropowder for secondary battery anode applications 微粉上旋转式原子层沉积氧化铝涂层的二次电池阳极应用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-12 DOI: 10.1016/j.tsf.2025.140656

Kihun Seong , Kikang Lee , Sung-Ho Yoon , Jun-Hyeok Jeon , Hyun-Mi Kim , Seul-Gi Kim , Sung Kyu Jang , Jae-Boong Choi , Hyeongkeun Kim

{"title":"Rotary-type atomic layer deposition of aluminum oxide coating on micropowder for secondary battery anode applications","authors":"Kihun Seong , Kikang Lee , Sung-Ho Yoon , Jun-Hyeok Jeon , Hyun-Mi Kim , Seul-Gi Kim , Sung Kyu Jang , Jae-Boong Choi , Hyeongkeun Kim","doi":"10.1016/j.tsf.2025.140656","DOIUrl":"10.1016/j.tsf.2025.140656","url":null,"abstract":"<div><div>Atomic layer deposition (ALD) on powder materials is often limited to achieve uniform and conformal thin films because of the insufficient precursor adsorption by a very large surface area of powder materials. To minimize the amount of precursor consumed while securing the adsorption time of the precursor on the powder surface, we introduced a stop-valve mode during the precursor pulse step. Briefly, we investigated a rotary-type ALD system capable of coating Al<sub>2</sub>O<sub>3</sub> thin films on 3D structures with diverse microparticle shapes, and optimized the operating parameters, which were found to be a stop valve time, trimethylaluminum pulse time, water vapor pulse time, and temperature of 20, 0.2, 0.2 s, and 150 °C, respectively, yielding an average growth rate of 1.3 Å/cycle and refractive index of 1.64. This method surpasses normal ALD in controlling Al<sub>2</sub>O<sub>3</sub> thin film deposition on 3D substrates with high specific surface areas, as verified by surface and microscopic analyses. To demonstrate the effectiveness of the ALD process with stop valve mode, a comparative analysis of materials deposited versus those coated with normal ALD was carried out. Crucially, the capacity retention of Si alloy powder-based secondary battery anodes coated using ALD with the stop valve mode was approximately 24 % higher than bare anodes and 7 % higher than those coated with normal ALD.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"817 ","pages":"Article 140656"},"PeriodicalIF":2.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Direct current sputter deposited CuO layers on conductive glass: Towards a maximum photoelectrochemical response of photocathodes 直流溅射在导电玻璃上沉积CuO层：实现光电阴极的最大光电化学响应

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-12 DOI: 10.1016/j.tsf.2025.140655

Hyesung Kim , Patrik Schmuki

引用次数: 0

Evolution in morphological features, enhancement of optical transparency and band gap broadening in Manganese doped nickel oxide thin films for optoelectronics applications 光电子应用中锰掺杂氧化镍薄膜形态特征的演变、光学透明度的增强和带隙的展宽

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-11 DOI: 10.1016/j.tsf.2025.140651

Selina Akter Lucky , Mehnaz Sharmin , Harinarayan Das , Jiban Podder

{"title":"Evolution in morphological features, enhancement of optical transparency and band gap broadening in Manganese doped nickel oxide thin films for optoelectronics applications","authors":"Selina Akter Lucky , Mehnaz Sharmin , Harinarayan Das , Jiban Podder","doi":"10.1016/j.tsf.2025.140651","DOIUrl":"10.1016/j.tsf.2025.140651","url":null,"abstract":"<div><div>Nickel (II) oxide (NiO) and manganese (Mn) doped NiO thin films were synthesized by a low-cost thermal spray pyrolysis technique. Mn concentration was varied from 1 to 4 at% in the doped thin films. In field emission scanning electron microscopic analysis, NiO's surface morphology was transformed from agglomeration of triangular nanoparticles to clusters of random-sized nanoparticles because of Mn-doping. In the X-ray diffraction analysis, all the films were observed to have face-centered cubic structures with preferential orientation along the (111) plane. The crystallite size was calculated using the Scherrer formula, Williamson-Hall analysis, and the size-strain plot. Lattice constant of the films were determined using Neilson-Relay plots. Transmittance of NiO films was found to be 90 % for 2 at% Mn-doping. The band gap of NiO film widened significantly owing to Mn doping. Urbach energy was estimated using absorbance data. The highest room-temperature resistivity observed for 2 at% Mn-doped NiO film was 2.01×10<sup>5</sup> Ω-cm. The 2 at% Mn-doped NiO film had the minimum activation energy (0.12 eV) in temperature range 348–373 K. Conclusively, 2 at% Mn-doped NiO thin film reveals the highest Haacke's figure of merit of 2.55<span><math><mo>×</mo></math></span>10<sup>−12</sup> Ω<sup>−1</sup>, promoted to five orders of magnitude, worthy of optoelectronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"816 ","pages":"Article 140651"},"PeriodicalIF":2.0,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0