Thin Solid Films最新文献

{"title":"Understanding grain growth and grain boundary inversion in CdS thin films by CdI2 activation","authors":"Suman Kumari ,&nbsp;G. Chasta ,&nbsp;D. Suthar ,&nbsp;Himanshu ,&nbsp;N. Kumari ,&nbsp;M.S. Dhaka","doi":"10.1016/j.tsf.2024.140593","DOIUrl":"10.1016/j.tsf.2024.140593","url":null,"abstract":"<div><div>The post deposition halide treatment to Cadmium (Cd) based solar cell devices is recognized as vital step for passivation of grain boundaries and influences the performance parameters drastically. In view of these facts, herein, a concise investigation on the impact of post-deposition Cadmium iodide (CdI₂) treatment on the physical properties of thermally evaporated Cadmium sulfide (CdS) films is carried out at 100 °C, 200 °C and 300 °C temperature. The structural, electrical, optical and topographical properties are explored by using characterization tools concerned. The crystallographic results reveal that the films are polycrystalline in nature having mixed hexagonal (wurtzite) and cubic (zinc blende) phases and preferentially oriented along (220) cubic plane. Augmentation in crystallite size of CdS films from 34 nm to 41 nm is observed with CdI₂ treatment where optical energy band gap is tuned in 2.33–2.39 eV range with treatment temperature. The broad photoluminescence emission peak is achieved for all the CdS films in the spectral range of 660–710 nm which is associated to red emission band where intensity of peak is continuously enhanced with temperature. The electrical study shows Ohmic nature of the as grown and CdI₂ treated CdS films where conductivity is lessened for treated films as compared to the as grown films. Surface topographical analysis reveals to formation of almost nanospherical grains having variable size at different activation temperature. The transmittance of &gt;75 % beyond 600 nm wavelength is observed for CdS films activated at 300 °C. The findings revealed that CdS films treated at 300 °C are suitable to use as window layer in fabrication of Cd based thin film solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140593"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nickel-plated melamine sponges for versatile applications in flame resistance, electromagnetic absorption and advanced sensing","authors":"Shanshan Duan ,&nbsp;Hua Meng ,&nbsp;Guanda Yang ,&nbsp;Dirk W. Schubert","doi":"10.1016/j.tsf.2025.140617","DOIUrl":"10.1016/j.tsf.2025.140617","url":null,"abstract":"<div><div>In this study, nickel-plated melamine sponge composites were prepared via a simple autocatalytic deposition for potential applications in flame resistance, electromagnetic absorption, and strain/pressure sensing. Commercial melamine foams were used as the base material, and nickel plating was achieved through a controllable process involving sensitizing, activating, and autocatalytic plating steps. The obtained Ni@Sponge composites were characterized using scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and thermal gravimetric analysis (TGA) to collect the structure and thermal information. SEM images reveal uniform nickel distribution on the surface of the Ni@Sponge-High skeleton without significant structural deformation. Energy dispersive X-ray spectrometer (EDS) and FTIR analysis results confirm the nickel deposition, while TGA indicates enhanced thermal stability in the nickel-plated composite samples. Flame resistance tests demonstrate improved fire retardancy in the nickel-plated samples compared to that of the original sponge. Moreover, excellent electromagnetic absorption and strain/pressure sensing capabilities of Ni@Sponge-High based electronic sensors were observed, showcasing the potential applications of the composites in future human-machine interaction and artificial intelligence fields.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"814 ","pages":"Article 140617"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143452920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The impact of willemite Zn2SiO4 phase in B1 to B2 type structural phase transformation in CdxZn1-xO composite thin films","authors":"Arkaprava Das ,&nbsp;Marcin Zając ,&nbsp;Wei-Hsiang Huang ,&nbsp;Chi-Liang Chen ,&nbsp;Asokan Kandasami ,&nbsp;Carla Bittencourt","doi":"10.1016/j.tsf.2025.140616","DOIUrl":"10.1016/j.tsf.2025.140616","url":null,"abstract":"<div><div>This study explores the influence of willemite Zn₂SiO₄ phase upon the structural phase transformation from the B1 (NaCl) to B2 (CsCl) phase in Cd_xZn_1-xO (<em>x</em> = 0.20, and 0.60) composite thin films. X-ray diffraction and Raman spectroscopy analyses show that at an annealing temperature of 900 °C, the B2 phase of CdO nanoparticles becomes achievable with a relative atomic concentration of 60 % Cd, whereas it is absent with 20 % Cd concentration. The presence of the willemite Zn₂SiO₄ phase for 60 % Cd concentration at 900 °C annealing temperature, which plays an important role in this transformation, was confirmed by analyzing the Zn <em>L</em>_3,2 and O <em>K</em> edges X-ray absorption near edge spectroscopy, Si 2<em>p</em> edge X-ray photoelectron spectroscopy, and a broad emission in the green spectral region of the photoluminescence spectra. Electron microscopy indicates the out-diffusion of Zn₂SiO₄ nanoparticles from the film-substrate interface to the film surface, facilitated by the kinetic energy gained during high-temperature thermal annealing. The larger unit cell volume of the trigonal Zn₂SiO₄ phase was identified as inducing the necessary local pressure to trigger the B1 to B2 phase transformation in the CdO nanoparticles. Additionally, simulations using Zn <em>K</em> edge extended absorption fine structure suggest that the local environment around the Zn atoms remain unchanged during phase transition. Cross-sectional transmission electron microscopy images reveal the presence of an amorphous SiO_x layer at the film-substrate interface, facilitating atomic inter-diffusion and leading to the formation of the Zn₂SiO₄ nanoparticles. It is shown that a Cd concentration exceeding 40 % in the ZnO matrix enables the achievement of the experimentally challenging high-pressure B2 phase.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140616"},"PeriodicalIF":2.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of glass titanium silicon at different compositions grown by thermal evaporation and sputtering techniques","authors":"Heloisa H.P. Silva ,&nbsp;Tanna E.R. Fiuza ,&nbsp;Rodrigo V. Portugal ,&nbsp;Edson R. Leite ,&nbsp;Marcelo A. de Farias ,&nbsp;Jefferson Bettini","doi":"10.1016/j.tsf.2025.140613","DOIUrl":"10.1016/j.tsf.2025.140613","url":null,"abstract":"<div><div>Metallic glasses, in bulk and thin film forms, are of significant interest in scientific research due to their unique properties and wide-ranging engineering applications. Key attributes such as structure, electrical conductivity, surface roughness, mechanical strength, corrosion resistance, and wear resistance determine their potential uses. This study investigates titanium-silicon (TiSi) metallic glass thin films with varying compositions grown via thermal evaporation and sputtering techniques. Comprehensive characterization methods were employed to analyze these films. The composition was determined using energy-dispersive spectroscopy and validated with electron energy loss spectroscopy, which also monitored oxidation processes. Transmission electron microscopy confirmed the films' homogeneity and absence of segregation, such as clusters or nanoparticles. Structural properties were assessed using selected-area electron diffraction and electron pair distribution functions. Thickness and roughness measurements were obtained via atomic force microscopy, while electrical properties were evaluated using the four-probe method. Hydrophobicity was determined through contact angle goniometry with water. This work examines how TiSi thin film properties vary with composition, enabling the design of surface composite materials with tailored functionalities. A specific TiSi composition was identified as suitable for use as a support material in transmission electron microscopy grids.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140613"},"PeriodicalIF":2.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A multilayered black Ni-P solar absorbent material with double physical vapor deposited Ag and Al selective nanocoatings","authors":"Víctor Octavio Martínez Hernández ,&nbsp;Adrián Sosa Domínguez ,&nbsp;José de Jesús Pérez Bueno ,&nbsp;José Santos Cruz ,&nbsp;Francisco Javier de Moure Flores","doi":"10.1016/j.tsf.2025.140614","DOIUrl":"10.1016/j.tsf.2025.140614","url":null,"abstract":"<div><div>This study presents a single proposed sample type designed to combine high solar absorption efficiency and enhanced corrosion resistance, a multilayer solar absorber material comprising a black nickel-phosphorus base layer, for absorption in the visible to short-wavelength infrared. It was covered with nanometric Ag (∼7 nm) and Al (∼5 nm) thin films proposed as complementary selective layers to reflect in the mid- and long-wavelength infrared to avoid losing energy in hot surfaces by radiation. This multilayer optimizes solar absorption but also possesses corrosion resistance with the Al₂O₃ self-passivating layer of Al, albeit with limitations due to heterogeneity and the topography of the underlying black Ni-P layer. The Al layer reduced the corrosion rate from 0.28 for steel to 0.19 mmpy for the full multilayer system, despite introducing microgalvanic interactions in chloride-rich environments that increased localized corrosion signals. The multilayer absorption system achieved total absorptions of about 91 % for steel/Ni-P/Ag and about 93 % for steel/Ni-P/Ag/Al/Al₂O₃ in the visible/near-wavelength/short-wavelength infrared, with an overall absorption of up to 99 %. This work highlights the required balance between optical performance and electrochemical stability attained with multilayer systems, making them a promising solution for sustainable solar energy applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140614"},"PeriodicalIF":2.0,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition","authors":"Hassan Melhem ,&nbsp;Geraldine Hallais ,&nbsp;Gaelle Amiri ,&nbsp;Gilles Patriarche ,&nbsp;Nathaniel Findling ,&nbsp;Theo Van den Berg ,&nbsp;Hafssa Ameziane ,&nbsp;Charles Renard ,&nbsp;Vincent Sallet ,&nbsp;Laetitia Vincent","doi":"10.1016/j.tsf.2025.140609","DOIUrl":"10.1016/j.tsf.2025.140609","url":null,"abstract":"<div><div>In many semiconductors, metastable polytype phases are attractive to tune physical properties. Owing to a non-centrosymmetric structure, ZnS with a wurtzite (WZ) phase would exhibit additional piezoelectric properties, optical non-linearity as well as Rashba effect. Because bulk single crystalline ZnS-WZ is not commercially available in useful sizes and attractive prices, large area thin films with controlled crystalline phase are required. We report the synthesis of ZnS films deposited on m-plane CdS substrates as a proof of concept of the replication of the WZ stacking on non-polar surfaces. First, a chemical mechanical polishing is required for the substrate preparation. ZnS layers are subsequently grown using metal organic chemical vapor deposition. The results show a strong impact of the growth temperature on the CdS substrate surface that is highly detrimental on the crystalline quality of the layer. However, the m-plane ZnS layers grown at 360 °C have WZ structure with a perfect epitaxial orientation relationship with the CdS-WZ substrate. The hexagonality in ZnS-WZ is about 90 %. Strain relaxation occurs through the formation of misfit dislocations at the interface forming basal and prismatic stacking faults on {11–20} planes. Additional pyramidal planar defects are evidenced. With the optimisation of a buffer layer or a more suitable substrate, this ZnS-WZ layers may find various applications not limited to optics such as piezoelectricity or spintronics. Additionally, they may be used as a platform for the growth of other materials with the envisioned WZ structure.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140609"},"PeriodicalIF":2.0,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion beam assisted deposition of a thin film metallic glass","authors":"Vrishank Jambur,&nbsp;Zijian Wang,&nbsp;John Sunderland,&nbsp;Soohyun Im,&nbsp;Xuanxin Hu,&nbsp;Sakiru Akinyemi,&nbsp;John H. Perepezko,&nbsp;Paul M. Voyles,&nbsp;Izabela Szlufarska","doi":"10.1016/j.tsf.2025.140612","DOIUrl":"10.1016/j.tsf.2025.140612","url":null,"abstract":"<div><div>We have used ion beam assisted deposition to modify the properties of a thin film Pd_77.5Cu₆Si_16.5 metallic glass without altering the composition. By irradiating the film surface during deposition, the mobility of surface atoms is enhanced, leading to the development of atomically smooth films with increased hardness and kinetic stability. Further, increasing the ion beam energy changes the crystallization pathways in the metallic glass films, pointing to changes in as-deposited structure. This approach to tune the properties of metallic glass films may unlock access to previously unobserved structural states.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140612"},"PeriodicalIF":2.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processable graphene derivative as an alternative carbon-based electrode","authors":"Alvaro Guerra-Him ,&nbsp;Julio C. Carrillo-Sendejas ,&nbsp;José-Luis Maldonado ,&nbsp;Yaily Fernández-Arteaga ,&nbsp;Maiby Valle-Orta ,&nbsp;Uriel Sierra ,&nbsp;Salvador Fernández","doi":"10.1016/j.tsf.2025.140610","DOIUrl":"10.1016/j.tsf.2025.140610","url":null,"abstract":"<div><div>A processable graphene derivative (PGD) is presented for potential application in organic solar cells (OSCs). PGD was mechanically synthesized, suspended in water and used as an alternative anode in two configurations: 1) Three-layer graphene anode (TLGA): PGD/PH1000/PH1000, where PH1000 is a conductive polymer; PGD was deposited by drop-casting and treated with hydriodic acid, to recover its electrical properties, and with UV-ozone plasma, to improve the adhesion of the next layer (PH1000); it achieved a transmittance (T) (at 550 nm) ∼ 74 % and a resistance (R) ∼ 170 Ω/sq. 2) Hybrid multilayer graphene anode (HMGA): PH1000:PGD (4:1 v/v), 6 layers were deposited by spin-coating and treated with hydriodic acid; this electrode showed T (at 550 nm) ∼ 79 % and R ∼ 134 Ω/sq. As a concept test, alternative anodes TLGA and HMGA were implemented in PM6:Y7-based OSCs to confirm the application of PGD. For the alternative cathode, Field's metal, a eutectic alloy composed of Sn, Bi and In, vacuum free deposited, was used; the achieved efficiencies were of ∼ 8.7 % for the control OSCs, ∼ 4.0 % for TLGA and ∼ 1.4 % for HMGA.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140610"},"PeriodicalIF":2.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure evolution of forsterite film during the high-temperature annealing process in grain-oriented silicon steel","authors":"Chengfu Han ,&nbsp;Xianhui Wang ,&nbsp;Ruifeng Li ,&nbsp;Songshan Zhao ,&nbsp;Jianhui Tian ,&nbsp;Zhenyu Du ,&nbsp;Fushan Li","doi":"10.1016/j.tsf.2025.140607","DOIUrl":"10.1016/j.tsf.2025.140607","url":null,"abstract":"<div><div>Forsterite films play an important role in enhancing the adhesion of the insulation layer and the magnetic properties of grain-oriented silicon steel. To clarify the microstructure evolution of forsterite film, an experiment involving high-temperature annealing at different temperatures ranging from 850 °C to 1150 °C was performed. Additionally, the reaction processes between MgO and the oxides formed in the decarburization oxide layer, such as SiO₂ and Fe₂SiO₄, were investigated. The initial formation temperature of the forsterite film is found to be within the range of 900 °C – 950 °C. The composition analysis reveals a decrease in the magnesium content from the surface toward the interior of the oxide layer. Up to 1100 °C, there is no longer a transition region between MgO and Fe₂SiO₄ in the uppermost oxide layer, showing that the surface of oxide layer is composed entirely of forsterite. Simultaneously, with the diffusion of Mg²⁺, SiO₂ in the subsurface region reacts with Mg²⁺ and is thus transformed into forsterite. The enrichment of aluminum, silicon, and oxygen in the bottom part of the oxide layer at 1100 °C implies the potential formation of mullite. These findings provide valuable insights to tune and control the forsterite film in grain-oriented silicon steel.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140607"},"PeriodicalIF":2.0,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring","authors":"Hirosuke Sonomura ,&nbsp;Ryota Nonami ,&nbsp;Gentoku Yoshida ,&nbsp;Keigo Nakano ,&nbsp;Kazuaki Katagiri ,&nbsp;Tomoatsu Ozaki","doi":"10.1016/j.tsf.2024.140599","DOIUrl":"10.1016/j.tsf.2024.140599","url":null,"abstract":"<div><div>The conditions for Cu film formation by friction stirring on Al₂O₃ and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140599"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}