Thin Solid Films最新文献

{"title":"Effect of thermal annealing on phase structure and hydrogen evolution reaction of molybdenum carbide thin films prepared by co-sputtering","authors":"Ling Jin,&nbsp;Zhihu Pan,&nbsp;Lei Wang,&nbsp;Xiaohong Ji","doi":"10.1016/j.tsf.2024.140579","DOIUrl":"10.1016/j.tsf.2024.140579","url":null,"abstract":"<div><div>Molybdenum carbide (Mo<em>_x</em>C) has attracted extensive attention owing to its rich valence states and excellent catalytic activity. Herein, the influences of thermal annealing on phase structure and hydrogen evolution reaction (HER) of Mo<em>_x</em>C thin films have been systematically studied by X-ray diffractometer, scanning electron spectroscopy, transmittance electron spectroscopy, and X-ray photoelectron spectroscopy. It has been found that annealing temperature shows a high impact on the phase structure of the Mo<em>_x</em>C thin films. The as-sputtered Mo<em>_x</em>C film and the films annealed at the temperatures of 500–600 °C are nearly in the mono α-MoC phase; the films annealed at 700 °C are β-Mo₂C phase, while the film annealed at 650 °C is in mixed MoC/Mo₂C phases. The MoC/Mo₂C hybrid films exhibit promoted HER performance with overpotential as low as 119 mV at 10 mA cm⁻² and the corresponding Tafel slope of 73 mV dec⁻¹ in acid, where the structural transformation from MoC to MoC/Mo₂C hybrid gives rise to the optimized electronic structure and intensively regulates the H adsorption energy. Benefiting from the synergistic effect of the dual-phase MoC/Mo₂C characteristics, the MoC/Mo₂C@CP hybrids can be directly used as binder-free electrocatalysts. This work provides an archetype for modulating the phase of Mo<em>_x</em>C thin film by a co-sputtering strategy for an efficient hydrogen evolution reaction.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140579"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A pressure sensitive silicon field effect transistor comprising a buffer-free piezoelectric Al0.72Sc0.28N layer","authors":"Rafael Ashkrizzadeh ,&nbsp;Ole Gronenberg ,&nbsp;Adrian Petraru ,&nbsp;Georg Schönweger ,&nbsp;Erik Mackensen ,&nbsp;Henning Hanssen ,&nbsp;Lorenz Kienle ,&nbsp;Hermann Kohlstedt","doi":"10.1016/j.tsf.2024.140590","DOIUrl":"10.1016/j.tsf.2024.140590","url":null,"abstract":"<div><div>Modified metal-insulator-semiconductor field effect transistors comprising piezoelectric materials are considered attractive devices for pressure sensing. In this work, we present a n-channel modified metal-insulator-semiconductor field effect transistor which consists of a 100 nm thick piezoelectric Al_0.72Sc_0.28N layer in the gate stack. The functional Al_0.72Sc_0.28N layer was deposited by sputtering directly, i.e. buffer-free, on the Si-channel. The transistors are located at the ends of Si cantilevers. Under a defined cantilever bending, transistors exhibited a sensitivity (<em>∆I_DS /∆F</em>) up to 30 (nA/N).</div><div>The structure of the piezoelectric Al_0.72Sc_0.28N layer, as deposited on Si, was investigated by wide-range reciprocal space mapping and pole figures. Cross-sections of the gate stack were analysed using Transmission Electron Microscopy and Electron Energy Loss Spectroscopy, which revealed no evidence of a residual interfacial layer.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140590"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of poly(3,4-ethylenedioxythiophene): Poly(styrene sulfonate) aggregate structure on thermoelectric performance","authors":"Xiang Gao ,&nbsp;Qinglin Jiang ,&nbsp;Fengxing Jiang ,&nbsp;Jiaji Yang ,&nbsp;Jingkun Xu ,&nbsp;Congcong Liu ,&nbsp;Peipei Liu","doi":"10.1016/j.tsf.2024.140583","DOIUrl":"10.1016/j.tsf.2024.140583","url":null,"abstract":"<div><div>Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has recently demonstrated significant advancements in its thermoelectric (TE) performance. The aggregate structure of PEDOT:PSS, including molecular configuration and arrangement, plays a crucial role in carrier migration and TE performance. However, the detailed relationship between aggregate structure and TE performance remains inadequately explored. This work employs a series of solvents with different polarity to regulate PEDOT:PSS film structures, demonstrating a substantial effect on the TE properties of the post-treated thin films. As expected, changes in surface roughness, molecular chain conformation, and π-π stacking distance of the PEDOT:PSS films treated by various solvents are observed. In addition, a simple TE device is designed to validate the potential application in practice of the prepared films, showing high output voltage of 5 mV and power of 91 nW, respectively. This work contributes valuable insights for the development of advanced organic TE materials.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140583"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"11.6 % Efficient textured InP solar cell with Nb2O5: A cutting-edge electron transport layer innovation","authors":"Mukaddar Sk ,&nbsp;Gourav ,&nbsp;K. Ramachandran","doi":"10.1016/j.tsf.2024.140577","DOIUrl":"10.1016/j.tsf.2024.140577","url":null,"abstract":"<div><div>Enhancing the efficiency of solar cells depends on minimizing reflection losses to boost photon absorption. In this study, we investigated the chemical etching process of pristine InP(100), (named as <em>pris</em>-InP(100)). Our findings demonstrate that the etching process resulted in a self-organizing V-groove microstructure, as revealed by atomic force microscopy and scanning electron microscopy. This induced V-groove microstructure resulted a significant reduction in the reflection loss. Through temporal variation in the etching process, we identified that a 5-minute etch (named as <em>etch5</em>-InP(100)), yielded the lowest reflectance. Additionally, radiofrequency (RF) magnetron sputtering was employed to deposit a 10 nm Nb₂O₅ thin film on both <em>pris</em>-InP (100) and <em>etch5</em>-InP (100) samples. The results indicated that the thin film on <em>etch5</em>-InP(100) exhibited significantly lower reflectance compared to <em>pris</em>-InP(100). Moreover, ab-initio calculations verified the stability and presence of native oxide at the interface of the Nb₂O₅/InP(100) heterostructure. Furthermore, dark current-voltage (I-V) characteristics indicated typical diode behaviour for both Nb₂O₅ thin films deposited on <em>pris</em>-InP(100) and <em>etch5</em>-InP(100). Notably, light I-V measurements revealed that the Nb₂O₅ thin film on <em>etch5</em>-InP(100) achieved a higher efficiency of 11.6 % compared to the 8.7 % efficiency of <em>pris</em>-InP(100). This study provides valuable insights and guidelines for the development of high-efficiency InP-based solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140577"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of substrate temperature on the performance of Sb2Se3 thin film solar cells fabricated by chemical-molecular beam deposition method","authors":"T.M. Razykov ,&nbsp;Lukas Schmidt-Mende ,&nbsp;K.M. Kouchkarov ,&nbsp;R.R. Khurramov ,&nbsp;B.A. Ergashev ,&nbsp;М. Makhmudov ,&nbsp;D.Z. Isakov ,&nbsp;M. Primmatov ,&nbsp;R.T. Yuldoshov ,&nbsp;Sh.B. Utamuradova","doi":"10.1016/j.tsf.2024.140565","DOIUrl":"10.1016/j.tsf.2024.140565","url":null,"abstract":"<div><div>Antimony triselenide (Sb₂Se₃) stands as a promising candidate for photovoltaic (PV) applications due to its favorable material- and optoelectronic properties. However, the realization of further advancements in device efficiency is hindered by the substantial deficit in open-circuit voltage (<em>V</em>_OC) attributed to the presence of multiple defect states and detrimental recombination losses.</div><div>In this work, solar cells based on Sb₂Se₃ absorber layers deposited by chemical-molecular beam deposition method at substrate temperatures of 400 °C, 450 °C, and 500 °C. Due to the precise control of the Sb/Se ratio, Sb₂Se₃ thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray spectroscopy. The effect of substrate temperature on the morphology and electrical properties of Sb₂Se₃ thin-films were characterized by scanning electron microscopy and hot probe method. The PV performance of Mo/Sb₂Se₃/ZnCdS/CdS/ZnO/ITO/Au devices were investigated by current-voltage characteristics, and external quantum efficiency. The conductivity values tend to increase from 1.2 × 10^–6 to 4.6 × 10^–4 (Ω cm)^-1 as the substrate temperature increased. Whereas, the trap-state density was determined between 7.3 × 10¹³ – 1.7 × 10¹⁴ cm^-3 in the absorber layer by the space charge limited current method. Ultimatety, it has been shown that defect densities in Sb₂Se₃ films can be suppressed to some extent by optimizing the substrate temperature. Best solar cell performance of 5.36%, resulting from <em>V</em>_OC of 476 mV, short-circuit current densit of 22.97 mA/cm⁻², and fill factor of 49% at the substrate temperature of 450 °C.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140565"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of thin film for triple-cation perovskite via hot-bar-coating method without post-annealing process","authors":"Shogo Miyake ,&nbsp;Genya Uzurano ,&nbsp;Akihiko Fujii ,&nbsp;Masanori Ozaki","doi":"10.1016/j.tsf.2024.140563","DOIUrl":"10.1016/j.tsf.2024.140563","url":null,"abstract":"<div><div>The triple-cation perovskite Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃ was deposited using the hot-bar-coating method. The effects of the substrate temperature and coating bar sweep speed on the film quality were investigated. Coating the precursor solution at a substrate temperature of 150 °C, reduced fabrication time by eliminating the post-annealing process, which is essential to conventional film fabrication methods, i.e., the antisolvent method. We further investigated the dependence of thin film thickness and quality on the coating bar sweep speed, finding that the optimal film quality was achieved at a speed of 4 mm/s. Importantly, decomposition into PbI₂ was not observed during film fabrication for the triple-cation perovskite. The results of solar cell property measurements, indicating that the fabricated devices maintained high performance for 500 h in ambient air, suggest that the hot-bar-coating method is a promising approach for producing perovskite solar cells with high atmospheric stability and potentially low cost.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140563"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism of the local destruction of the amorphous Ta2O5 layer on the surface of a tantalum anode","authors":"B.E. Pushkarev,&nbsp;R.M. Nikonova,&nbsp;V.I. Lad'ynov","doi":"10.1016/j.tsf.2024.140564","DOIUrl":"10.1016/j.tsf.2024.140564","url":null,"abstract":"<div><div>In the present work, a mechanism of the destruction of amorphous tantalum oxide Ta₂O₅ on the tantalum anode surface is suggested based on high absorption properties of tantalum. The data of analysis of the morphological peculiarities of the defective areas of the surface layers show that the destruction of the amorphous film occurs due to the growth of a pyramid-shaped defect; the pyramidal defect is not coherent with amorphous surface Ta₂O₅, and it is not a product of its crystallization. The nucleation and growth of the “pyramid” occurs due to the directed movement of oxygen during the oxidation of the tantalum surface along the grain boundaries to the region of triple junctions of the tantalum matrix with the subsequent local formation of crystalline Ta₂O₅. The suggested mechanism offig destruction can be realized when high-purity tantalum powders are used.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140564"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of thermal annealing on the luminescent and structural properties of the SiOxCy thin films by organic catalytic chemical vapor deposition","authors":"M. Meneses ,&nbsp;M.F. Ávila Meza ,&nbsp;J.R. Ramos Serrano ,&nbsp;Y. Matsumoto","doi":"10.1016/j.tsf.2024.140568","DOIUrl":"10.1016/j.tsf.2024.140568","url":null,"abstract":"<div><div>Photoluminescent silicon oxycarbide (SiO_xC_y) thin films were deposited on n-type (100) silicon substrates using the organic catalytic chemical vapor deposition (O<img>Cat-CVD) technique employing tetra-ethyl orthosilicate (TEOS) as an organic-based precursor. These films were annealed at a temperature of 500, 800 and 1000 °C for 30 min in a nitrogen (N₂) environment. The as-deposited and annealed SiO_xC_y films were analyzed using optical and structural characterizations, such as photoluminescence (PL), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), Secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM). The PL spectrum of the as-deposited film showed emission in the blue-green region, while the annealed SiO_xC_y films showed strong emission from blue to near-infrared. The PL in all the films was attributed to different structural defects related to oxygen and carbon that act as radiative centers in the SiO_xC_y network. The annealed films showed an increase in the emission intensity, where the annealed film at 800 °C displayed the highest emission intensity. This is related to an increase in the amount of radiative defects in the films due to structural and compositional changes after the thermal annealing (TA). XPS and SIMS measurements showed an oxygen incorporation with the TA, increasing from 54.6 at % to 63.8 at % for the as-deposited and annealed at 1000 °C films, respectively. FTIR spectra showed an increase in the Si-O-C and Si-O-Si bonds and the hydrogen and other radicals desorption. These results support the creation of radiative centers due to structural changes in the films after the thermal annealing.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140568"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase evolution and surface analysis of electron beam evaporated calcium and yttria-stabilized zirconia thin films","authors":"Ankit Kumar ,&nbsp;Pravin Kumar ,&nbsp;A S Dhaliwal","doi":"10.1016/j.tsf.2024.140575","DOIUrl":"10.1016/j.tsf.2024.140575","url":null,"abstract":"<div><div>The manuscript investigates the structural and morphological characteristics of thin films of calcium stabilized zirconia (CSZ, 16 mol % CaO), synthesized through electron beam deposition on silicon wafers, with a focus on the phase evolution during annealing at 800 °C. The study compares these properties with yttria stabilized zirconia (YSZ, 8 mol % Y₂O₃) thin films. Rutherford backscattering spectrometry validates film composition, with thicknesses of ∼315 nm for CSZ and ∼285 nm for YSZ. X-ray diffraction initially identifies an amorphous structure, transitioning to a cubic phase post-annealing, with average crystallite sizes of 18.07 nm for CSZ and 16.22 nm for YSZ, corroborated by Raman spectroscopy. The lattice parameters are determined using Rietveld refinement. Surface morphology is investigated through field emission scanning electron microscope and atomic force microscopy shows a reduction in surface roughness from 6.05 nm to 1.34 nm for CSZ and from 4.54 nm to 1.64 nm for YSZ post-annealing, indicating enhanced homogeneity. Elemental distribution analysis using energy dispersive X-ray spectroscopy confirms film uniformity. The study provides insights into the structural evolution and morphological characteristics of calcium stabilized zirconia thin films, particularly at the nanoscale level, offering valuable contributions to its industrial applicability.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140575"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure and hysteresis properties of Ni/Ta nanocomposite films modified by thermomagnetic treatment","authors":"V.O. Vas'kovskiy ,&nbsp;A.A. Bykova ,&nbsp;N.A. Kulesh ,&nbsp;A.N. Gorkovenko ,&nbsp;V.N. Lepalovskij ,&nbsp;P.A. Savin ,&nbsp;N.V. Selezneva","doi":"10.1016/j.tsf.2024.140576","DOIUrl":"10.1016/j.tsf.2024.140576","url":null,"abstract":"<div><div>This work presents the results of a study on the crystal structure and hysteresis properties of nickel films (glass/Ni) and their layered composites (glass/Ni/Ta, glass/Ta/Ni/Ta) modified by thermomagnetic treatment. Using analysis of angular dependencies of coercive force, it has been shown that in the initial state all types of samples exhibit biaxial magnetic anisotropy, which is likely a result of the superposition of the \"magnetostatic\" and \"magnetoelastic\" mechanisms. We show that the thermomagnetic treatment can result in the formation of uniaxial or isotropic magnetic states, depending on the sample design.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140576"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}