Thin Solid Films最新文献

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Secondary telephone cord buckle in thickness gradient and tapered delamination 二次电话线扣厚度梯度和锥形分层
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-21 DOI: 10.1016/j.tsf.2026.140895
Mohamed Chargaoui , Guillaume Parry , Christophe Coupeau
{"title":"Secondary telephone cord buckle in thickness gradient and tapered delamination","authors":"Mohamed Chargaoui ,&nbsp;Guillaume Parry ,&nbsp;Christophe Coupeau","doi":"10.1016/j.tsf.2026.140895","DOIUrl":"10.1016/j.tsf.2026.140895","url":null,"abstract":"<div><div>We investigated the formation of telephone-cord buckling patterns in stressed nickel thin films deposited by ion beam sputtering on polycarbonate substrates with a controlled thickness gradient. Initially, the application of an external compressive stress induced straight-sided buckles in the nickel films. Upon releasing the applied stress, these buckles transformed into telephone-cord patterns oriented parallel to the thickness gradient, exhibiting stripe widths that varied accordingly. Experimental observations revealed that both the wavelength and width of the telephone-cord buckles decreased with decreasing film thickness. To further understand this behavior, finite element method simulations were performed to systematically study the effects of film thickness, stripe-width gradients and internal stress on the buckle wavelength. The numerical results are presented and compared with experimental data, showing good agreement and providing deeper insight into the mechanics of gradient-induced buckling in thin films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140895"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal-stress-driven enhancement of magnetic performance in electrical steel via aluminum titanate-modified insulating coatings 热应力驱动下钛酸铝改性绝缘涂层对电工钢磁性能的增强
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-11 DOI: 10.1016/j.tsf.2026.140889
Meiqi Gao, Ruipeng Xu, Song Li
{"title":"Thermal-stress-driven enhancement of magnetic performance in electrical steel via aluminum titanate-modified insulating coatings","authors":"Meiqi Gao,&nbsp;Ruipeng Xu,&nbsp;Song Li","doi":"10.1016/j.tsf.2026.140889","DOIUrl":"10.1016/j.tsf.2026.140889","url":null,"abstract":"<div><div>Minimizing energy losses in grain-oriented silicon steel (GOSS), a critical core material in transformers, is crucial for developing next-generation smart grid systems. Herein, we introduce aluminum titanate (AT) that has an ultralow coefficient of thermal expansion (CTE) into phosphate-based insulating coatings. This strategy is designed to engineer interfacial tensile stress, thereby refining magnetic domains in GOSS. At an optimal loading of 2.0 wt % AT, the coating achieves a remarkable reduction in iron loss (by 209.8 mW/kg) and an enhancement in magnetic flux density (by 95.97 mT). The magnetic performance enhancement is accompanied by a significant improvement in corrosion resistance. These enhancements are attributed to increased coating density and stress-induced domain refinement. However, an excessive AT content of 2.5 wt % leads to particle agglomeration and microcrack formation, which compromises both magnetic and electrochemical performance. This study presents a viable strategy for tailoring magnetic performance through ceramic modification, enabling the development of high-performance electrical steels.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140889"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing adhesion and tribological properties of Al7075 via shot peening and physical vapor deposition techniques 通过喷丸和物理气相沉积技术提高Al7075的附着力和摩擦学性能
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-14 DOI: 10.1016/j.tsf.2026.140891
Behzad Ghasemi Parvin, Gokhan Gulten, Yasar Totik, Ihsan Efeoglu
{"title":"Enhancing adhesion and tribological properties of Al7075 via shot peening and physical vapor deposition techniques","authors":"Behzad Ghasemi Parvin,&nbsp;Gokhan Gulten,&nbsp;Yasar Totik,&nbsp;Ihsan Efeoglu","doi":"10.1016/j.tsf.2026.140891","DOIUrl":"10.1016/j.tsf.2026.140891","url":null,"abstract":"<div><div>Al 7075 is a high-strength aluminum alloy widely used in aerospace and automotive applications; however, its surface hardness and wear resistance are limited. In this study, Al 7075 was shot peened using S110 and S230 shot types at Almen intensities of 8A and 10A, followed by TiN thin film deposition by physical vapor deposition (PVD). The coatings were produced under different target currents (2–3 A), N<sub>2</sub> flow rates (5–7 sccm), and duty cycles (15–30 %) based on a Taguchi L<sub>4</sub> design. Structural, mechanical, and tribological properties were evaluated using microscopy, microhardness, scratch, and pin-on-disk tests under dry sliding conditions. The combined treatment increased surface hardness from ∼178 Vickers microhardness (HV) to ∼832 HV (S230 shot and 10A with titanium nitride (TiN) coating) ≈395 %. Shot peening (SP) increased the surface roughness from approximately 4–5 µm to 9–12 µm, whereas subsequent TiN coating reduced the roughness to about 3–4 µm. Scratch test results revealed improved coating adhesion, with critical load values reaching up to 27 N. Among the investigated conditions, the combination of S230 shot type with 10 Almen intensity and optimized PVD parameters (R3) provided the most favorable balance between hardness, adhesion strength, and tribological performance, demonstrating the effectiveness of SP-assisted TiN coating for enhancing the surface durability of Al 7075.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140891"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring deposition conditions in spray pyrolysis for MoO₃ thin films: multi-factor effects on physical properties towards high-performance n-MoO₃ /p-Si diodes MoO₃薄膜喷雾热解过程中沉积条件的调整:对高性能n-MoO₃/p-Si二极管物理性质的多因素影响
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-12 DOI: 10.1016/j.tsf.2026.140885
M. Ataei, M.R. Fadavieslam
{"title":"Tailoring deposition conditions in spray pyrolysis for MoO₃ thin films: multi-factor effects on physical properties towards high-performance n-MoO₃ /p-Si diodes","authors":"M. Ataei,&nbsp;M.R. Fadavieslam","doi":"10.1016/j.tsf.2026.140885","DOIUrl":"10.1016/j.tsf.2026.140885","url":null,"abstract":"<div><div>Molybdenum trioxide (MoO₃) thin films are wide-bandgap n-type oxides valued for their stability and high transparency in optoelectronic devices. However, optimizing spray pyrolysis deposition parameters—such as substrate temperature, solution volume, and spray rate—to achieve superior film quality and diode performance remains challenging. In this work, we systematically varied these parameters to study their effects on the structural, optical, and electrical properties of MoO₃ films and the performance of n-MoO₃/p-Si heterojunction diodes. X-ray diffraction confirmed the formation of phase-pure orthorhombic α-MoO₃ with a strong [010] orientation, and films deposited at 400 °C exhibited the best crystallinity, largest crystallite size (∼210 nm), and lowest lattice strain. Scanning electron microscopy images showed that these optimal films had smooth, dense surfaces with well-defined ∼210 nm grains. Optical measurements indicated band gaps in the range 2.81–2.98 eV, with the smallest gap (∼2.81 eV) for films deposited at 400 °C (with 15 mL solution volume and 10 mL/min spray rate). Electrical characterization of n-MoO₃/p-Si diodes revealed that devices based on the optimal films exhibited a very low reverse saturation current density (J₀ ≈ 5.4×10⁻⁵ mA/cm²) and an ideality factor of ≈5.13, corresponding to improved rectifying behavior. These enhancements are attributed to improved crystal quality, reduced defect density, and better interface formation at the MoO₃/Si junction. Our results demonstrate that precise tuning of spray pyrolysis conditions enables control over MoO₃ film microstructure and optoelectronic properties, which is crucial for optimizing MoO₃-based photodetectors, solar cells, and related devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140885"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of magnetic field on electromigration behavior in metallic thin interconnects under high-density electric current 高密度电流下磁场对金属薄互连中电迁移行为的影响
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-23 DOI: 10.1016/j.tsf.2026.140896
Yusuke Souma, Kazuhiko Sasagawa, Kazuhiro Fujisaki, Kotaro Miura
{"title":"Influence of magnetic field on electromigration behavior in metallic thin interconnects under high-density electric current","authors":"Yusuke Souma,&nbsp;Kazuhiko Sasagawa,&nbsp;Kazuhiro Fujisaki,&nbsp;Kotaro Miura","doi":"10.1016/j.tsf.2026.140896","DOIUrl":"10.1016/j.tsf.2026.140896","url":null,"abstract":"<div><div>Electromigration (EM) is a critical concern in metallic interconnect lines, particularly in the power modules used in electric vehicles at high current densities. This study investigates the influence of magnetic fields on the behavior of EM by performing high-density current loading tests on thin dumbbell-shaped Al specimens under a controlled magnetic field. The specimens were prepared using a wet-etching process and were annealed to ensure stability. Current loading tests were conducted with N- and S-pole magnetic fields applied perpendicular to the interconnect line. Optical and laser microscopy revealed significant morphological changes with hillock formation on the anode side and thinning on the cathode side. The Lorentz force induced by the magnetic field affected the electron flow distribution, leading to asymmetric changes of thickness along the width of the interconnected line. The results of this study suggest that magnetic fields affect the EM behavior and potentially impact the design and reliability of high-power electronic circuits.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140896"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-stable dielectrics for TiO2 film prepared by thermal oxidation 热氧化法制备TiO2薄膜的温度稳定介质
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-16 DOI: 10.1016/j.tsf.2026.140893
Xing Hu, ChengRui Wu, LinSheng Liu, Yi Li, ZhiYuan Ling
{"title":"Temperature-stable dielectrics for TiO2 film prepared by thermal oxidation","authors":"Xing Hu,&nbsp;ChengRui Wu,&nbsp;LinSheng Liu,&nbsp;Yi Li,&nbsp;ZhiYuan Ling","doi":"10.1016/j.tsf.2026.140893","DOIUrl":"10.1016/j.tsf.2026.140893","url":null,"abstract":"<div><div>The thermal oxidation film of titanium has been applied and studied for many years, but the dielectric properties are still poorly understood. In this study, pure titanium can be thermally oxidized at 800 °C to obtain temperature-stable capacitors, which have high areal capacitance (45.8 nF/cm<sup>2</sup>), low dielectric loss (&lt;0.02), and a nearly zero temperature coefficient (10 ppm/°C) at 100 kHz. X-ray Diffraction and Energy Dispersive Spectroscopy analysis reveal the coexistence of the rutile phase and oxygen diffusion layers depending on the oxidation temperature. Using complex impedance analysis, equivalent circuit models have been developed. The different Direct current bias and Alternating current voltage tests of the sample show that the capacitance nearly constant up to the breakdown voltage.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140893"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thickness dependence of infrared optical properties of ultrathin MoSi2-based thin films 超薄mosi2基薄膜红外光学特性的厚度依赖性
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-17 DOI: 10.1016/j.tsf.2026.140890
Arseniy Baskakov , Robbert van de Kruijs , Wesley T.E. van den Beld , Z. Silvester Houweling , Giorgio Colombi , Marcelo Ackermann
{"title":"Thickness dependence of infrared optical properties of ultrathin MoSi2-based thin films","authors":"Arseniy Baskakov ,&nbsp;Robbert van de Kruijs ,&nbsp;Wesley T.E. van den Beld ,&nbsp;Z. Silvester Houweling ,&nbsp;Giorgio Colombi ,&nbsp;Marcelo Ackermann","doi":"10.1016/j.tsf.2026.140890","DOIUrl":"10.1016/j.tsf.2026.140890","url":null,"abstract":"<div><div>This study investigates the thickness-dependent infrared (IR) optical properties of magnetron-sputtered MoSi₂ thin films, demonstrating how precise control over film thickness enables targeted tuning of reflectance, transmittance, and absorbance for IR applications. Fourier-transform IR spectroscopy reveals a twofold mechanism behind the optical behavior of these films. For thicknesses larger than approximately 20 nm, the observed changes in optical response are predominantly governed by multiple reflections at the film interfaces, as described by the Fresnel equations. In the ultrathin regime below 20 nm, however, the optical constants themselves evolve significantly with decreasing thickness, leading to changes in the interactions of the films with IR radiation. This behavior allows for continuous and versatile tuning of optical properties across a broad thickness range. These findings show the potential of MoSi₂ films as highly adaptable materials for advanced IR applications, such as radiative cooling, nanobolometry and IR radiation detectors, for which thickness serves as a key design parameter for tailoring performance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140890"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrigendum to “A Raman spectroscopic approach to hydrogen presence in diamond-like carbon using the hydrogen indicator” [Thin Solid Films 835 (2026) 140854] “使用氢指示剂测定类金刚石碳中氢存在的拉曼光谱方法”[Thin Solid Films 835(2026) 140854]的勘误表
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-20 DOI: 10.1016/j.tsf.2026.140883
Woo-young Lee , Minkyung Choi , Jongkuk Kim , Kyoung-il Moon , Jong-oh Ham , Jin-yong Sim , Byoung-il Cho
{"title":"Corrigendum to “A Raman spectroscopic approach to hydrogen presence in diamond-like carbon using the hydrogen indicator” [Thin Solid Films 835 (2026) 140854]","authors":"Woo-young Lee ,&nbsp;Minkyung Choi ,&nbsp;Jongkuk Kim ,&nbsp;Kyoung-il Moon ,&nbsp;Jong-oh Ham ,&nbsp;Jin-yong Sim ,&nbsp;Byoung-il Cho","doi":"10.1016/j.tsf.2026.140883","DOIUrl":"10.1016/j.tsf.2026.140883","url":null,"abstract":"","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140883"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Morphological and structural analysis of gradient Ni and Mn-doped lithium cobalt oxide thin films for lithium-ion battery applications 用于锂离子电池的梯度Ni和mn掺杂钴酸锂薄膜的形态和结构分析
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-11 DOI: 10.1016/j.tsf.2026.140888
José David Castro , Zohra Benzarti , Edgar Carneiro , António Fonseca , Sandra Carvalho , Albano Cavaleiro , C.F.Almeida Alves , Sandra M.A. Cruz
{"title":"Morphological and structural analysis of gradient Ni and Mn-doped lithium cobalt oxide thin films for lithium-ion battery applications","authors":"José David Castro ,&nbsp;Zohra Benzarti ,&nbsp;Edgar Carneiro ,&nbsp;António Fonseca ,&nbsp;Sandra Carvalho ,&nbsp;Albano Cavaleiro ,&nbsp;C.F.Almeida Alves ,&nbsp;Sandra M.A. Cruz","doi":"10.1016/j.tsf.2026.140888","DOIUrl":"10.1016/j.tsf.2026.140888","url":null,"abstract":"<div><div>This study provides a comprehensive analysis of LiCoO₂ (LCO), LiNiCoO₂ (LNCO), and LiMnNiCoO₂ (LMNCO) thin-film cathodes fabricated in a co-sputtering system (RF and DC power sources), with a particular focus on LMNCO’s structural and electrochemical performance, aiming to evaluate its potential for improved Li-ion storage. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) revealed granular surface morphology with Li₂CO₃ formation and distinct crystallinity, while LMNCO exhibited a multiphase structure that promotes Li-ion diffusion. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) studies confirmed the incorporation of Ni and Mn, surface carbonate formation, and elemental redistribution following deposition. Electrochemical testing by cyclic voltammetry showed limited activity for LCO, whereas LNCO and LMNCO displayed clear redox processes involving Ni, Co, and Mn. LMNCO demonstrated improved electrochemical response with clear evidence of Mn oxidation and Li intercalation, confirming its potential as a high-performance thin-film cathode. These results advance the understanding of compositionally complex cathodes and underscore the role of graded morphologies in optimising energy storage performance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140888"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering 直流低功率溅射制备高透明低阻氧化铟锡薄膜
IF 2 4区 材料科学
Thin Solid Films Pub Date : 2026-03-01 Epub Date: 2026-02-14 DOI: 10.1016/j.tsf.2026.140892
Xueqi Chen, Manyao Wang, Zongyu Huang, Xiang Qi
{"title":"Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering","authors":"Xueqi Chen,&nbsp;Manyao Wang,&nbsp;Zongyu Huang,&nbsp;Xiang Qi","doi":"10.1016/j.tsf.2026.140892","DOIUrl":"10.1016/j.tsf.2026.140892","url":null,"abstract":"<div><div>Indium tin oxide (ITO) films were prepared by 15–100 W direct current (DC) magnetron sputtering and then annealed at high temperature. The effect of sputtering power on the structural, optical and electrical properties of the films was systematically investigated. Optical transmittance in the visible range (400–800 nm) decreased from 89% (15 W) to 24% (100 W) due to defect-mediated light scattering, but recovered to &gt;85% after annealing. Electrical measurements indicate that annealing in an argon atmosphere enhances carrier concentration by promoting oxygen desorption, significantly reducing resistivity and yielding superior performance compared to samples annealed in air or vacuum. The optimal sputtering power of 60 W yields a high figure of merit (649 × 10<sup>–4</sup> Ω<sup>-1</sup>) with a balance of low resistivity (7 × 10<sup>–5</sup> Ωcm), low square resistance (6 ± 0.23 Ω/sq), and high transmittance (91%). This study proposes an optimised process route for achieving high-performance ITO thin films. By mitigating target material depletion issues and overcoming traditional high-power limitations, it broadens the process's applicability, holding significant value for industrial implementation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140892"},"PeriodicalIF":2.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147407596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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