Thin Solid Films最新文献

Environment-controlled agglomeration in nanoporous Ag films with ultrathin silicon oxide

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-16 DOI: 10.1016/j.tsf.2025.140683

Dawoon Jung , Sehoon Hwang , Hyun-Jong Kim , Sungho Yun , Jae-Hee Han , Ho-Nyun Lee

{"title":"Environment-controlled agglomeration in nanoporous Ag films with ultrathin silicon oxide","authors":"Dawoon Jung , Sehoon Hwang , Hyun-Jong Kim , Sungho Yun , Jae-Hee Han , Ho-Nyun Lee","doi":"10.1016/j.tsf.2025.140683","DOIUrl":"10.1016/j.tsf.2025.140683","url":null,"abstract":"<div><div>Silver (Ag) nanostructures have been employed extensively in various applications, including plasmonic devices, metamaterials, and optical devices. This is attributed to their low cost, high catalytic activity, low loss in the visible and near-infrared regions. However, the thin films and nanoparticles of Ag are susceptible to agglomeration and recrystallization, which reduces surface energy and internal stress. This study examines the phenomenon of agglomeration in nanoporous Ag films under a range of atmospheric conditions over an extended period. The Ag films were prepared by gas flow sputtering (GFS) and subsequently subjected to aging under different environments and humidity levels, including air, vacuum, dry air, and nitrogen (N<sub>2</sub>). To suppress Ag agglomeration and analyze the samples under each aging condition, a 2 nm-thick silicon oxide capping layer was applied. The surface morphology, particle area, crystallite size, and chemical bonding states were analyzed. The findings indicated that humidity facilitated the agglomeration of Ag particles, whereas silicon oxide effectively impeded the growth of Ag particles by hindering surface diffusion. Furthermore, surface-enhanced Raman scattering (SERS) analysis indicated that the application of a silicon oxide coating effectively controls the aggregation of the nanoparticle size and enhances the stability of Ag-based SERS substrates.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"821 ","pages":"Article 140683"},"PeriodicalIF":2.0,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Van der Pauw device for mobility measurement in organic semiconductors

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-15 DOI: 10.1016/j.tsf.2025.140682

Gabriel Volkweis Leite, Henri Boudinov

{"title":"Van der Pauw device for mobility measurement in organic semiconductors","authors":"Gabriel Volkweis Leite, Henri Boudinov","doi":"10.1016/j.tsf.2025.140682","DOIUrl":"10.1016/j.tsf.2025.140682","url":null,"abstract":"<div><div>In this work, a Van der Pauw device was developed using photolithography to measure the carrier mobility of organic semiconductors. This device performs four-point measurements, minimizing the influence of contact resistance between the organic semiconductor and the metal contacts. Nickel contacts and SiO<sub>2</sub> gate dielectric were used. The device was fabricated on a Si wafer, which also serves as the device's gate. A thin layer of SiO₂ was created on the Si wafer before depositing the organic semiconductor, acting as the gate dielectric. The semiconductor used was Poly(3-hexylthiophene-2,5-diyl), which was deposited by spin coating. Theoretical modeling was performed using Van der Pauw theory along with a compact DC model for organic transistors. First-order approximations showed that by varying the gate voltage, the sheet conductance exhibited a linear dependence on the difference between the gate voltage and the average voltage of the measurement electrodes. Measurements were performed using a parameter analyzer, applying different gate voltages and current injections, with corresponding voltage values being measured. From the measured data, the values of sheet conductance and mobility were extracted. The mobility values obtained ranged from 0.1 to 0.5 cm²/(V.s), which are consistent with those reported in the literature using other methods. However, the results suggest that mobility values obtained by other methods may be underestimated due to the influence of contact resistance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140682"},"PeriodicalIF":2.0,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143843016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Environmentally friendly synthesis and characterization of CuInS₂ thin films via electrostatic spray deposition of nanocolloids

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-14 DOI: 10.1016/j.tsf.2025.140681

Mahsa Yadolahi , Yaser Vahidshad , Seyed Mohammad Mirkazemi , Somaye Alamalhoda

{"title":"Environmentally friendly synthesis and characterization of CuInS₂ thin films via electrostatic spray deposition of nanocolloids","authors":"Mahsa Yadolahi , Yaser Vahidshad , Seyed Mohammad Mirkazemi , Somaye Alamalhoda","doi":"10.1016/j.tsf.2025.140681","DOIUrl":"10.1016/j.tsf.2025.140681","url":null,"abstract":"<div><div>This study investigates the process parameters for electrostatic spray deposition of a stable colloid derived from copper indium sulfide composition. The research evaluates the influence of coating parameters on film deposition, structure, microstructure, and optical absorption properties. Analytical techniques including optical microscopy, scanning electron microscopy, X-ray diffraction, and ultraviolet-visible spectroscopy were employed. CuInS₂ colloid was deposited using the electrospray method with applied voltages of 24, 26, and 28 kV, flow rates of 1, 2, and 3 µL/min, and nozzle-to-substrate distances of 60, 80, and 100 mm onto fluorine-doped tin oxide glass substrates. Post-deposition, heat treatment at 500 °C was conducted to enhance crystallinity and adhesion, with sulfur powder added to ensure positive sulfur vapor pressure and prevent sulfur loss. Microstructural analysis via optical microscopy, scanning electron microscopy, and field-emission scanning electron microscopy identified best deposition conditions: 26 kV voltage, 2 µL/min flow rate, and an 80 mm nozzle-to-substrate distance, producing a uniform 1 µm-thick layer. The CuInS₂ layer exhibited strong visible light absorption, with an absorption edge at 760 nm and an energy gap of 1.5 eV.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140681"},"PeriodicalIF":2.0,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143838912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CrRu-X (X=VN, TiN, ZrN) seed layers effects on the epitaxial growth and magnetic properties of FePt-based films

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-07 DOI: 10.1016/j.tsf.2025.140672

Jai-Lin Tsai , Tsung-Yi Chen , Ming-Wei Hsieh , Cheng-Yu Tsai , Mau-Tin Lin , Hsin-Hau Huang

{"title":"CrRu-X (X=VN, TiN, ZrN) seed layers effects on the epitaxial growth and magnetic properties of FePt-based films","authors":"Jai-Lin Tsai , Tsung-Yi Chen , Ming-Wei Hsieh , Cheng-Yu Tsai , Mau-Tin Lin , Hsin-Hau Huang","doi":"10.1016/j.tsf.2025.140672","DOIUrl":"10.1016/j.tsf.2025.140672","url":null,"abstract":"<div><div>For heat-assisted magnetic recording media, each functional film, such as the underlayer/seed layer/heat-sink layer deposited on the amorphous soft magnetic underlayer/glass substrate, was required to grow epitaxially to promote the formation of (00L) textured FePt film. The Cr-based seed layer with (002)/[110] epitaxial orientation is essential for the growth of the MgO-based underlayer and the FePt perpendicular magnetic recording film. Here, the varied nitrides, VN, TiN, or ZrN, were further doped in the CrRu seed layer to modify the interface between the CrRu and MgTiON layer. For CrRu-<em>X</em> (<em>X</em>= TiN, ZrN) films, the Ti and Zr atoms were substituted in the CrRu lattice, which is evidenced in the lower diffraction angle (higher lattice constant) in the (002) plane, and the growth defects in the MgTiON layer can be improved due to smaller lattice misfit. In contrast, the lattice constant of CrRu-VN was close to the reference CrRu film because part of the VN was diffused up to the MgTiON layer and formed the bumpy morphology of grains, proved by the cross-sectional transition electron microscopy images and compositional analysis—the grain size and surface energy change when the VN presents around the MgTiON matric. The FePt (BN, Ag, C) film deposited on MgTiON/CrRu-VN shows the highest perpendicular magnetic anisotropy constant (K<sub>u</sub>) with the value of 2.36 × 10<sup>6</sup> J/m<sup>3</sup>, out of plane coercivity (H<sub>c</sub>= 2013 kA/m) and lowest remanence ratio (0.187) which is the ratio between in-plane remanence and out-of-plane remanence from hysteresis loops. The nitride-doped CrRu-<em>X</em> seed layer affected the magnetic and microstructural of FePt (BN, Ag, C) film via diffused VN in the MgTiON lattice or minor lattice strain during thin film growth in MgTiON/CrRu-<em>X</em> (<em>X</em>= TiN, ZrN) system.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140672"},"PeriodicalIF":2.0,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of anti-adhesive and corrosion protection properties of TiAlSiN-magnetron-sputtered films for applications in polymer processing

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-04 DOI: 10.1016/j.tsf.2025.140676

Chantal Theile-Rasche , Fuzeng Wang , Tim Prüßner , Marten Huck , Hans-Georg Steinrück , Teresa de los Arcos , Guido Grundmeier

{"title":"Evaluation of anti-adhesive and corrosion protection properties of TiAlSiN-magnetron-sputtered films for applications in polymer processing","authors":"Chantal Theile-Rasche , Fuzeng Wang , Tim Prüßner , Marten Huck , Hans-Georg Steinrück , Teresa de los Arcos , Guido Grundmeier","doi":"10.1016/j.tsf.2025.140676","DOIUrl":"10.1016/j.tsf.2025.140676","url":null,"abstract":"<div><div>Steel substrates were coated with TiAlSiN thin films with varying Si content using a combinatorial approach based in magnetron co-sputtering of TiAl and Si targets. The coatings were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction, and Raman spectroscopy. The films were amorphous and showed (Ti+Al)/Si ratios ranging from 0.7 (TiAl<sub>3.0</sub>Si<sub>5.6</sub>O<sub>5.8</sub>N<sub>5.1</sub>) to 4.2 (TiAl<sub>3.6</sub>Si<sub>1.1</sub>O<sub>4.4</sub>N<sub>2.6</sub>). The influence of the film composition on the surface oxidation and the corrosion resistance was investigated by near ambient pressure XPS and electrochemical methods. The films exhibited improved corrosion resistance with increasing Si-content. The adhesion properties were explored by investigating the interaction of the coatings with polycarbonate (PC). PC was melted onto the samples and the thickness of insoluble PC residue was investigated by ellipsometry, atomic force microscopy and nanoscale infrared spectroscopy. The results indicate that the incorporation of Si mainly promotes corrosion resistance, without altering the good anti-adhesive properties of TiAlN films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140676"},"PeriodicalIF":2.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143847698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and performance of imidazole epoxy-octane copolymer as a leveler for the through-hole electroplating copper of printed circuit board

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-03 DOI: 10.1016/j.tsf.2025.140675

Yiting Li , Xuewen Zhuang , Zhengxu Wu , Dingjun Xiao , Binyun Liu , Xiaochun Zhang , Junmin Nan

{"title":"Synthesis and performance of imidazole epoxy-octane copolymer as a leveler for the through-hole electroplating copper of printed circuit board","authors":"Yiting Li , Xuewen Zhuang , Zhengxu Wu , Dingjun Xiao , Binyun Liu , Xiaochun Zhang , Junmin Nan","doi":"10.1016/j.tsf.2025.140675","DOIUrl":"10.1016/j.tsf.2025.140675","url":null,"abstract":"<div><div>A functional agent, imidazole epoxy-octane (IDEO) copolymer, is synthesized as a leveling additive for the through-hole (TH) electroplating of copper on printed circuit boards (PCBs). The efficacy of this agent in enhancing the TH reliability is then tested and verified. The polymerization process utilizes imidazole and 1,2,7,8-diepoxyoctane as the raw materials. A series of electrochemical tests demonstrate that when used in conjunction with other additives, IDEO significantly inhibits copper deposition and subsequently facilitates the thickness and leveling regulation of electroplating copper in the inner layer of the THs of PCBs. At the optimal concentration, the TH throwing power value reaches 85 %. In addition, the surface morphology of copper plates plated under different leveler solutions is compared. The comparison, conducted using scanning electron microscopy and atomic force microscopy tests, reveals that the addition of IDEO can effectively reduce the roughness of the copper surface. And computational chemistry and molecular dynamics simulations also indicate that IDEO has a high binding energy, forming an effective adsorption with the copper surface. Furthermore, the leveling mechanism of IDEO additive is surmised by X-ray photoelectron spectroscopy and chrono potential tests on copper plates, which validates the effectiveness and potential application of IDEO leveler in PCBs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140675"},"PeriodicalIF":2.0,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Macro-scale phase purity and epitaxiality of pulse-laser-deposited Ga2O3 on c-plane sapphire 脉冲激光沉积在 c 平面蓝宝石上的 Ga2O3 的宏观尺度相纯度和外延性

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-03 DOI: 10.1016/j.tsf.2025.140673

Sana Ayyuby, Swagata Bhunia, Santosh Kumar Yadav, Subhabrata Dhar, Suddhasatta Mahapatra

{"title":"Macro-scale phase purity and epitaxiality of pulse-laser-deposited Ga2O3 on c-plane sapphire","authors":"Sana Ayyuby, Swagata Bhunia, Santosh Kumar Yadav, Subhabrata Dhar, Suddhasatta Mahapatra","doi":"10.1016/j.tsf.2025.140673","DOIUrl":"10.1016/j.tsf.2025.140673","url":null,"abstract":"<div><div>In this work, the phase-purity and epitaxial quality of Ga<sub>2</sub>O<sub>3</sub> thin films, grown by pulsed laser deposition, on c-plane sapphire substrates, is systematically investigated, primarily by a combination of different high-resolution X-ray-diffraction-based analyses. We observe that while the oxide grows predominantly in the (<span><math><mrow><mover><mn>2</mn><mo>¯</mo></mover><mn>01</mn></mrow></math></span>) orientation of the monoclinic <span><math><mrow><mi>β</mi></mrow></math></span>-phase, it contains some volume fraction of the hexagonal α-phase, tentatively close to the film-substrate interface. This is in contrast to some earlier observations, where the monoclinic <span><math><mrow><mi>β</mi></mrow></math></span>-phase was found to stabilize atop exactly three monolayers of the α-phase. However, no other polymorphic phases could be identified in the oxide films, irrespective of the film thickness. Phase-purity and epitaxial quality of <span><math><mrow><mi>β</mi></mrow></math></span>-Ga<sub>2</sub>O<sub>3</sub> thin films, on macroscopic length-scales probed by X-ray diffraction techniques, are critical attributes determining the applicability of this ultra-wide-band-gap semiconductor for development of high-performance optoelectronic and microelectronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140673"},"PeriodicalIF":2.0,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microstructures and mechanical properties of anodic oxides on TiNbSn implant alloys

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-04-02 DOI: 10.1016/j.tsf.2025.140674

N. Masahashi , M. Kubota , H. Inoue , Y. Mori , K. Ohmura

{"title":"Microstructures and mechanical properties of anodic oxides on TiNbSn implant alloys","authors":"N. Masahashi , M. Kubota , H. Inoue , Y. Mori , K. Ohmura","doi":"10.1016/j.tsf.2025.140674","DOIUrl":"10.1016/j.tsf.2025.140674","url":null,"abstract":"<div><div>This study explores the microstructure characteristics and mechanical properties of anodic oxides on the TiNbSn alloy (TNS) and compares them to those on pure Ti. After 90 s of anodization, spark discharge occurs in the TNS electrode, whereas pure Ti does not exhibit this phenomenon; instead, intense gas generation is observed at the electrode surface. The anodized TNS develops a rough and thick oxide with a dual-phase consisting of rutile and anatase TiO<sub>2</sub>, with the rutile fraction increasing as anodization progresses. By contrast, anodized Ti forms a thin and glassy layer of anatase TiO<sub>2</sub> characterized by alternating low- and high-density pores in the cross-sectional direction, and the growth rate of anodized Ti is lower than that of anodized TNS. The surface roughness and surface area of the anodized oxides increase with anodization, with both the rate of increase and overall value being higher for anodized TNS as compared to anodized Ti. This vigorous chemical reaction in TNS is attributed to the fact that pentavalent Nb reacts more efficiently with oxygen ions than tetravalent Ti, resulting in the formation of an insulating oxide. Anodized TNS exhibits higher hardness and exfoliation strength than anodized Ti due to the presence of hard and strongly adhered rutile TiO<sub>2</sub>. Potentiodynamic polarization measurements indicate that anodization significantly reduces the passivation current density of TNS as compared to Ti. It is proposed that anodizing reactions differ based on the valence of the Ti or Ti-alloy electrodes, highlighting anodization as an effective method for enhancing the hardness and corrosion resistance of TNS.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"820 ","pages":"Article 140674"},"PeriodicalIF":2.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and characterization of structural, morphology and electrical properties of thermally deposited quinacridone thin films

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-31 DOI: 10.1016/j.tsf.2025.140670

Tengyue Zhang , Hiroto Segawa , Rongbin Ye

引用次数: 0

Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-03-29 DOI: 10.1016/j.tsf.2025.140668

Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara

{"title":"Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals","authors":"Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara","doi":"10.1016/j.tsf.2025.140668","DOIUrl":"10.1016/j.tsf.2025.140668","url":null,"abstract":"<div><div>The precise measurement and minimization of contact resistance (R<sub>c</sub>) between the thermoelectric semiconductor and electrode are required for enhancing the conversion efficiency and reliability of thermoelectric generation (TEG) devices. The R<sub>c</sub> values are obtained using the conventional transfer length method (TLM); however, the effect of semiconductor thickness on contact resistance remains unexplored. To gain a clearer understanding of this effect, this study fabricated samples with different semiconductor thicknesses and evaluated the specific contact resistivity (ρ<sub>c</sub>) at the bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>)/barrier metals (Ti, Cr, and Ni) interfaces, regardless of the semiconductor dimension and device shape. Our TLM measurements revealed that the ρ<sub>c</sub> of the Bi<sub>2</sub>Te<sub>3</sub>/barrier metals interfaces increased in the order of Ti, Cr, Ni. This study provides accurate data regarding the physical interface properties between Bi<sub>2</sub>Te<sub>3</sub>/barrier metals, enhancing the conversion performance and reliability of TEG devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140668"},"PeriodicalIF":2.0,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0