Thin Solid Films最新文献

{"title":"Effect of Nb doping on the mechanical properties and wear performance of TiB2 coatings","authors":"Lijun Xian,&nbsp;Hongyuan Fan,&nbsp;Weicai Wan,&nbsp;Fanggong Cai,&nbsp;Zhongguang Yu,&nbsp;Jibo Zhang,&nbsp;Rong Pu,&nbsp;Haibo Zhao,&nbsp;Lan Sun,&nbsp;Zhixing Guo,&nbsp;Guang Xian","doi":"10.1016/j.tsf.2026.141047","DOIUrl":"10.1016/j.tsf.2026.141047","url":null,"abstract":"<div><div>TiB₂ is a promising coating for titamium alloys machining due to its high hardness, high thermal stability and self-lubrication, but its low fracture toughness and adhesive wear restrict its broader use. In this study, Nb element with varying contents (2∼9 at.%) was doped into the TiB₂ coatings by magnetron sputtering. Electron probe X-Ray microanalysis, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, indentation tests and ball-on-disk tribometer were used to characterize the chemical composition, microstructure, mechanical properties and wear performance of the TiB₂ coating and Nb-doped TiB₂ coatings. The results show that, with the increase of Nb doping content, the content of TiB₂ phase in the coatings gradually decreased while that of the (Ti, Nb)B₂ solid solutions increased. When at 9 at.% Nb, the coating exhibited a nano-multilayered structure of Ti-rich layer alternating with Nb-rich layer. The hardness of the Nb-doped TiB₂ coatings decreased progressively with the increasing Nb content, 51.2 GPa for the TiB₂ coating and 39.4 GPa for the 9 at.% Nb-doped TiB₂ coating. The amorphous phase together with the multi-interfaces within the nano-multilayered structure enhanced the crack propagation resistance of the 9 at.% Nb-doped TiB₂ coating, demonstrating excellent fracture toughness and adhesion strength. Nb-O tribofilms with energy dissipation capability formed during friction, which provided solid lubrication between the 9 at.% Nb-doped TiB₂ coating and the titanium alloy counterpart and effectively reduced the CoF to 0.32. Appropriate Nb doping not only improved fracture toughness and adhesion strength of the TiB₂ coating, but also enhanced the adhesive wear resistance by altering the wear mechanism. This study provides a framework for the design of TiB₂ coatings with excellent fracture toughness for titanium alloys machining.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141047"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149162640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Distinct structural features of a two-dimensional Au–Co alloy beneath graphene","authors":"Artem G. Rybkin,&nbsp;Anna A. Rybkina,&nbsp;Vasily S. Stolyarov","doi":"10.1016/j.tsf.2026.141049","DOIUrl":"10.1016/j.tsf.2026.141049","url":null,"abstract":"<div><div>Intercalation of graphene with transition and noble metals offers a versatile route to tailor its electronic and magnetic properties. Here, we investigate the structural and magnetic characteristics of the graphene/Au–Co/Co(0001)/W(110) system after Au intercalation, employing scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy, and scanning electron microscopy. We demonstrate the formation of a two-dimensional Au–Co surface alloy beneath graphene, characterized by a periodic network of triangular loop dislocations. The size and spacing of these dislocations exhibit an inverse correlation with the local Au concentration, which simultaneously drives nanoscale surface corrugation as a mechanism for relaxation of compressive stress. Despite pronounced topographic modulation, STM and STS reveal that the proximity-induced ferrimagnetic ordering in graphene remains robust across corrugated regions. Tip-induced mechanical deformation is shown to locally suppress this magnetic order by reducing the graphene–alloy separation and weakening the exchange coupling. These findings establish a direct link between intercalant concentration, structural relaxation, and spin–orbit and magnetic proximity effects, providing a pathway for spatially controlled engineering of graphene-based spintronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141049"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149203906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ozone activation overcomes nucleation delay in poly(methyl methacrylate) vapor phase infiltration and enables processing of inert polystyrene","authors":"Yingdong Deng,&nbsp;Wenda Bao,&nbsp;Rongliang Shang,&nbsp;Yifan Wu,&nbsp;Weiyi Lin,&nbsp;Yixiao Liu,&nbsp;Jin Xie","doi":"10.1016/j.tsf.2026.141057","DOIUrl":"10.1016/j.tsf.2026.141057","url":null,"abstract":"<div><div>Vapor phase infiltration (VPI) is an emerging technique for incorporating inorganic components into polymer matrices to impart enhanced functionality. However, its practical implementation is often limited by nucleation delay when precursor–polymer reactions are sluggish and is particularly challenging for chemically inert polymers. Here, we introduce an in situ ozone activation step that generates oxygen-containing reactive sites in polymer films and thereby promotes chemisorption of low-reactivity organometallic precursors. Using tetrakis(dimethylamino)tin for SnO₂ VPI, ozone activation suppresses the incubation period on poly(methyl methacrylate) (PMMA), reducing the nucleation delay from about 10 VPI cycles to near-zero, as quantified by quartz crystal microbalance measurements and X-ray photoelectron spectroscopy depth-profiling. Extending this strategy to chemically inert polystyrene, ozone activation initiates Sn incorporation that is otherwise negligible under identical conditions. The resulting SnO₂-PMMA hybrids exhibit improved resistance to inductively coupled plasma reactive ion etching and increased surface mechanical stiffness. These results establish ozone activation as a simple and effective strategy for mitigating nucleation delay and broadening precursor-polymer compatibility in VPI.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141057"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149255004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unexpected electrical transport in ZnO thin films deposited by Radio-Frequency magnetron sputtering","authors":"Bator Khol,&nbsp;Sébastien Saitzek,&nbsp;Jean-françois Blach","doi":"10.1016/j.tsf.2026.141054","DOIUrl":"10.1016/j.tsf.2026.141054","url":null,"abstract":"<div><div>This paper reports the synthesis and comprehensive characterisation of highly oriented zinc oxide (ZnO) thin films prepared via radio-frequency magnetron sputtering. The structural, optical, and morphological properties were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV–VIS) absorption, fluorescence spectroscopy and atomic force microscopy. The films exhibit a charge transfer efficiency exceeding 80% at applied voltages above 0.6 V, highlighting their strong potential for photoactive and photoelectrochemical applications. Remarkably, the photocurrent follows a super-linear regime indicating a pronounced sensitivity to the light power and can be useful for sensor applications. Temperature-dependent current-voltage curves (I-V curves) from room temperature to 200 °C, reveal an inhomogeneous Schottky barrier at the ZnO/gold interface and an unexpected transition in electrical transport regime between 90 °C and 100 °C.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141054"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149255008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of SnO2:Eu3+ films for luminescent transparent conducting oxides","authors":"Pule Nche,&nbsp;R.E. Kroon","doi":"10.1016/j.tsf.2026.141051","DOIUrl":"10.1016/j.tsf.2026.141051","url":null,"abstract":"<div><div>Traditional transparent conducting oxides (TCOs) are not luminescent, but adding this functionality may allow niche applications such as luminescent touchscreens or buttons. In this work we have evaluated the feasibility of SnO₂:Eu³⁺ films deposited onto quartz substrates via pulsed laser deposition (PLD) to form luminescent TCOs. Films were prepared under varying oxygen background gas pressures ranging from 0.667 kPa to 40.0 kPa at a constant substrate temperature of 350 °C. Structural analysis revealed the retention of the SnO₂ tetragonal phase of the precursor powder for films deposited at high oxygen background pressures greater or equal to 13.3 kPa. Increase in background pressure also led to a change from relatively smooth to rougher nanorod-like morphology of film surfaces. Transmittance at the onset of the visible range (400 nm) was optimized at 70% for the film deposited at 26.7 kPa. The 13.3 kPa and 26.7 kPa O₂ background pressure range revealed favourable structural and optimal properties for the films. Electrical measurements revealed the poorest conductivity for films deposited at both low and high extremes of the considered background oxygen pressure (0.667 and 40.0 kPa), while the film deposited at an intermediate pressure of 0.667 kPa showed the lowest resistivity of 5.14 Ω⋅cm, confirming the potential use for luminescent TCO films. By demonstrating the convenient tuning of the luminescent and conducting properties of SnO₂:Eu³⁺ through strategic thin-film engineering, this report shows the potential for the integration of further optimized rare-earth doped luminescent TCOs into optoelectronic platforms.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141051"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149255005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of deposition temperature on the structure, friction and corrosion properties of Cr/Al-diamond-like carbon films","authors":"Yanxia Wu,&nbsp;Tao Zhang,&nbsp;Yanjie Xu,&nbsp;Yang Cao,&nbsp;Jianyong Wang,&nbsp;Ying Liu","doi":"10.1016/j.tsf.2026.141045","DOIUrl":"10.1016/j.tsf.2026.141045","url":null,"abstract":"<div><div>Cr/Al-diamond-like carbon films were prepared by magnetron sputtering technology with a fixed direct current sputtering power to investigate the effects of different deposition temperatures (100 °C, 200 °C, 300 °C, 350 °C, 400 °C) on the structure, morphology, mechanical, frictional and corrosion properties of the films. The results showed that Cr and Al in the films mainly exist in the form of Cr_xC_y and Al₂O₃. The C<img>Cr bonds in the films decreased with increased temperature, while the C-Al bonds initiated formation at 300 °C and increase progressively with increased temperature. This was attributed to the formation of C-Al compounds may encounter lower energy barriers compared to some C<img>Cr phases, especially under conditions of sufficient activation energy and enhanced local atomic mobility during the deposition and high temperature diffusion. The friction coefficient of all the film in 3.5 wt.% NaCl solution was much lower than that in air. Amongst them, the coefficient of friction of film prepared at 300 °C was 0.38 in 3.5 wt.% NaCl solution, on one hand, Cr_xC_y nanoparticles with high hardness and wear-resistance decreased the wear, the formed Cr_xO_y in the solution can also decreased friction. On the other hand, the Al₂O₃ layer effectively isolate the corrosive medium from the film, prevent the generation of cracks in the film and exhibits excellent wear resistance, endowing the film with a low friction coefficient. Additionally, the C-Al bond reduced internal stress and direction rigidity, which formed readily sheared interface and thus reduce the friction.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141045"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149203905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation between annealing conditions, microstructure, and photoelectrochemical activity of electrodeposited WO₃ thin films","authors":"Ece Değirmenci,&nbsp;Gamze Atak","doi":"10.1016/j.tsf.2026.141050","DOIUrl":"10.1016/j.tsf.2026.141050","url":null,"abstract":"<div><div>Among various photoanodes, tungsten oxide (WO₃) stands out due to its visible light absorption, long hole diffusion length, and chemical stability in acidic electrolytes. In this study, WO₃ thin films were fabricated onto FTO substrates by using pulsed voltage electrodeposition (PVE). The structural (XRD), morphological and compositional (SEM–EDX), optical (UV–Vis), electronic (Mott–Schottky), surface-chemical (XPS), and LSV measurements were analyzed in detail to understand their PEC properties. A two-stage thermal optimization was then applied to establish an efficient photoanode protocol. In the first stage, the annealing temperature was varied from 250 °C to 400 °C for 2 h. Characterization results showed that 300 °C is a critical crystallization threshold. Below this point, films remain amorphous with negligible photocurrent. Above it, excessive grain growth reduces the active surface area. Specifically, pore density decreased from 22.3 % at 250 °C to 3.82 % at 400 °C. In the second stage, annealing durations between 0.5 and 6 h were tested at 300 °C. Crystallization effectively began after 2 h of annealing. Across the investigated range, average crystallite size increased from 1.22 nm to 18.9 nm. A 4-hour treatment yielded the highest photocurrent density. This sample also showed a donor density of 7.17 × 10¹⁹ cm⁻³ and the optimal Fermi level alignment (E_c−E_f = 0.00679 eV). In contrast, 6 h of annealing induced structural overdevelopment and grain boundary defects, reducing the photocurrent. At 300 °C, an annealing time of 2 h marked the onset of effective crystallization, while 4 h yielded the highest photocurrent density, identifying this condition as the optimal protocol for electrodeposited WO₃ photoanodes. This condition balances crystallinity, morphology, and charge carrier dynamics. XPS further confirmed that oxygen vacancies are the main donors in the films, and the optimized 4 h film sustained a stable photocurrent over 5 h of continuous illumination. The optimized films provide a reproducible baseline for next-generation development. Furthermore, they serve as a foundation for heterojunction architectures. Coupling WO₃ with complementary semiconductors is expected to further suppress recombination and extend light harvesting for efficient hydrogen production.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141050"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149203907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrode-induced interdiffusion leading to the formation of high-k mixed Hf-Ta-Ti oxide capacitors","authors":"Jiann-Shing Jeng,&nbsp;Chia-Jung Liu,&nbsp;Chien Ting Wu,&nbsp;Jen-Sue Chen","doi":"10.1016/j.tsf.2026.141055","DOIUrl":"10.1016/j.tsf.2026.141055","url":null,"abstract":"<div><div>We investigated the influence of Ru and Ta top electrodes on the structural, chemical, and electrical characteristics of sputtered TiOₓ/HfOₓ-stacked metal-insulator-semiconductor (MIS) capacitors. The Ru-electrode capacitor retained a more clearly distinguishable TiOₓ/HfOₓ bilayer structure and exhibited conventional capacitance-voltage (C-V) behavior. In contrast, the Ta electrode produced substantially stronger electrode/dielectric interaction and compositional intermixing within the high-k stack, consistent with the formation of a mixed Hf-Ta-Ti oxide dielectric with a dielectric constant (k) of 60.8. Mixed Ti oxidation states, higher leakage current, and anomalous C-V behavior in the as-deposited state accompanied this enhanced dielectric response. Thermal annealing significantly improved the electrical characteristics of the Ta-electrode capacitor, restoring conventional MOS-type C-V behavior while retaining a low equivalent oxide thickness. These results reveal a clear trade-off between enhanced dielectric response and interfacial stability in Ta-containing structures and demonstrate the importance of electrode/dielectric chemical compatibility in scaled high-k MIS capacitors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141055"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149255006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of laser ablated LiCoO2 cathodes in lithium ion batteries","authors":"Fahad Munshe,&nbsp;Kartik Ghosh,&nbsp;Saibal Mitra","doi":"10.1016/j.tsf.2026.141052","DOIUrl":"10.1016/j.tsf.2026.141052","url":null,"abstract":"<div><div>Lithium Cobalt Oxide (LiCoO₂) has long been the industry standard for cathode materials in lithium-ion batteries (LIBs). In this study, LiCoO₂ cathode films were fabricated on stainless steel (SS) substrates using pulsed laser deposition (PLD). The oxygen (O₂) partial pressure was maintained at 1.33 and 13.33 Pa, while the substrate temperature was set at 400 °C, 650 °C, and 700 °C. Scanning electron microscopy (SEM) was employed to examine the surface morphology, and X-ray diffraction (XRD) was used to monitor phase progression. XRD data confirmed that the material deposited at 650 °C and 700 °C exhibited a rhombohedral crystal lattice structure with the R3m space group, whereas films grown at 400 °C displayed an amorphous structure. Raman spectroscopy further validated the XRD findings by identifying the vibrational modes. SEM provided insights into the surface topography of the cathodes. Charge-discharge measurements indicated that the coin cell battery fabricated at 650 °C achieved the highest discharge capacity. Additionally, electrochemical impedance spectroscopy (EIS) revealed that this coin cell battery also exhibited the lowest ohmic resistance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"852 ","pages":"Article 141052"},"PeriodicalIF":2.4,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149255007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chiral phase amplification of 1,1′-binaphthyl thin films by thermal treatment","authors":"Sanjay John,&nbsp;Ann Maria James,&nbsp;Fabian Gasser,&nbsp;Johanna Lang,&nbsp;Anmol Andotra,&nbsp;Ivo B Rietveld,&nbsp;Yves Geerts,&nbsp;Roland Resel","doi":"10.1016/j.tsf.2026.141034","DOIUrl":"10.1016/j.tsf.2026.141034","url":null,"abstract":"<div><div>1,1′-Binaphthyl is a model molecule for axial chirality with the possibility to interchange between the two enantiomers by changing its molecular conformation. The molecule crystallizes in three distinct crystalline phases: the racemic phase, the chiral phase and the transient chiral phase. This work studies phase transition mechanisms from the racemic to the chiral phase in thin films. Thin films are prepared by solution processing using drop casting and spin coating, with additional post-deposition treatment by solvent vapour annealing. The structure of thin films is investigated in situ as a function of temperature using hot stage optical microscopy to study thin film morphological changes and X-ray diffraction to determine the corresponding crystallographic changes during the phase transition. Depending on the initial thin film structure three distinct transition pathways to chiral phase pure thin films are observed: i) a solid-solid transition in drop casted thin films around 120 °C driven by chiral seed crystals, ii) a liquid-solid transition in solvent vapor-annealed films near 146 °C due to the melting of the racemic phase followed by the recrystallization into the chiral phase and iii) a sublimation assisted purification in spin-coated thin films around 120 °C, where the racemic crystallites sublime and the chiral phase remains. While the first two transition mechanisms also occur in bulk material, the sublimation-driven pathway is observed exclusively in thin films. Generally, the initial thin film morphology and the crystallographic properties determine which phase transition pathways occur.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"851 ","pages":"Article 141034"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149161322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}