Thin Solid Films最新文献

{"title":"Doped barium titanate for enhanced ferroelectric photovoltaic performance","authors":"Shi Xuan Jia ,&nbsp;Lei Wang ,&nbsp;Ye Feng Wang ,&nbsp;Tian-Yi Hu ,&nbsp;Ke Zhen Hui ,&nbsp;Jing Hui Zeng","doi":"10.1016/j.tsf.2025.140815","DOIUrl":"10.1016/j.tsf.2025.140815","url":null,"abstract":"<div><div>The carrier mobility of barium titanate (BaTiO₃) with perovskite structure leads to its insulating characteristics and low power conversion efficiency as a ferroelectric photovoltaic device. To solve this problem, both A-site La-doped and B-site Mn-Nb co-doped BaTiO₃ photovoltaic thin film devices have been prepared. Their UV-Visible spectra revealed that as the doping content increases, the bandgap gradually decreases. From the XPS study, La-doping and Mn-Nb co-dopingof BTO can both increase the presence of oxygen vacancies in the BaTiO₃, which is beneficial to its conductivity and mobility as a result of charge compensation. The reduction of the bandgap and the improvement of the conductivity result in a large short-current density 58 μA·cm^-2 for Mn-Nb co-doped BTO. This work shows that the performance of ferroelectric photovoltaics can be effectively improved by A-site or B-site doping that improves electrical conductivity and light absorption.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"831 ","pages":"Article 140815"},"PeriodicalIF":2.0,"publicationDate":"2025-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145340719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Argon flow effect on the properties and composition of diamond-like carbon films grown by plasma-enhanced chemical vapor deposition","authors":"O.M. Chapura,&nbsp;V.V. Kovalenko,&nbsp;V.A. Tarala,&nbsp;M.G. Ambartsumov","doi":"10.1016/j.tsf.2025.140811","DOIUrl":"10.1016/j.tsf.2025.140811","url":null,"abstract":"<div><div>Diamond-like carbon (DLC) films were synthesized on single-crystal silicon and glass substrates by plasma-enhanced chemical vapor deposition at varying argon flow in the methane/argon plasma-forming mixture. The resulting DLC films were studied by energy-dispersive spectroscopy, scanning electron microscopy, atomic force microscopy, Fourier-transform infrared spectroscopy, spectroscopic ellipsometry, Raman and ultraviolet-visible spectroscopy. It was found that the thickness of the DLC films decreases with increasing argon flow while the argon content increases throughout the entire volume of the films. The synthesized films were characterized by a refractive index of 2.16 and an extinction coefficient of 0.195 over the entire studied range of argon flow. At the same time, increasing the argon flow resulted in a decrease in the band gap from 1.19 to 1.14 eV and a decrease in the hydrogen concentration from 28.5 to 28 at. % in the coating material. The synthesized films were classified as amorphous hydrogenated diamond-like carbon films. Furthermore, calculations revealed that the increase in argon flow was accompanied by a decrease in the proportion of <em>sp³</em>-hybridized carbon atoms from 46.4 to 45.5 % and an increase of sp² cluster size from 0.79 to 0.81 nm. The most probable reason for this could be the introduction of high-energy argon ions into the coating material, facilitating the transition of subsurface <em>sp³</em>-hybridized carbon atoms to <em>sp²</em>-hybridized ones during the relaxation process.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"830 ","pages":"Article 140811"},"PeriodicalIF":2.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable tuning of reversible thermally induced phase transition and adaptive infrared emissivity in microcrystalline VO2 thin films via argon ion implantation","authors":"Andrii Nikolenko,&nbsp;Oleksandr Kolomys,&nbsp;Viktor Strelchuk,&nbsp;Petro Lytvyn,&nbsp;Denys Maziar,&nbsp;Maksym Alieksandrov,&nbsp;Borys Romanyuk,&nbsp;Oleksandr Dubikovskyi,&nbsp;Zinoviia Tsybrii,&nbsp;Yevhen Melezhyk,&nbsp;Viacheslav Zabudsky,&nbsp;Nataliia Kukhtaruk","doi":"10.1016/j.tsf.2025.140810","DOIUrl":"10.1016/j.tsf.2025.140810","url":null,"abstract":"<div><div>The effects of argon ion (Ar⁺) implantation on the dynamics of infrared (IR) thermal emissivity and optical properties of microcrystalline vanadium dioxide (VO₂) thin films were investigated during the metal-insulator transition (MIT) using infrared thermography and Fourier-transform infrared (FTIR) spectroscopy. Thin films deposited on Si(100) substrates were Ar⁺-implanted at 180 keV with doses between 2.15 × 10¹⁵ and 5.36 × 10¹⁵ ions/cm². Temperature-dependent emissivity was examined in the mid- and long-wave infrared spectral ranges during heating-cooling cycles, with emphasis on hysteretic behavior associated with the VO₂(M1) ↔ VO₂(R) phase transition. Comparative analysis of pristine and implanted VO₂ films revealed a dose-dependent reduction of the transition temperature from 340 K in the pristine film to 321 K and 315 K, an increase in metallic-phase emissivity from 0.30 to 0.34 and 0.46 at the two implantation levels, and a broadening of the emissivity hysteresis loop from ∼7 K in the initial sample to ∼9 K in the implanted films. Moreover, the amplitude of the emissivity change across the phase transition decreased substantially, from 0.21 in the pristine film to 0.08 in the film implanted with the highest dose. These effects are discussed in relation to implantation-induced structural disorder, including enhanced defect density and strain relaxation, which modify the coexistence of metallic and insulating domains. The results highlight ion implantation as an effective approach for tailoring the emissive response of VO₂ thin films for adaptive infrared devices and thermal management applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"830 ","pages":"Article 140810"},"PeriodicalIF":2.0,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145326256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface modification of copper by the formation of self-assembled monolayers at different concentrations of octadecanethiol in order to study aging process in 3.5 wt.% NaCl solution","authors":"Zahra Sabaghian ,&nbsp;Reza Arefinia ,&nbsp;Ali Davoodi","doi":"10.1016/j.tsf.2025.140808","DOIUrl":"10.1016/j.tsf.2025.140808","url":null,"abstract":"<div><div>Self-assembled monolayers (SAMs) have attracted considerable interest for surface modification of metals due to their ability to tailor interfacial properties, enhance corrosion resistance, and improve hydrophobicity. In the present work, the aging process of octadecanethiol (ODT) SAMs was studied in a wide range of concentration (1, 10 and 100 mM) in 3.5 wt% NaCl. The aging process of ODT-SAMs was studied by different electrochemical methods: potentiodynamic dynamic polarization, linear polarization resistance, and electrochemical impedance spectroscopy. The experimental findings demonstrated that the SAM prepared using 100 mM ODT exhibited perfect corrosion inhibition performance. Specifically, after 1 h exposure to NaCl solution, the SAM exhibited superior corrosion inhibition (99.8%). During 48 h immersion, the polarization resistance (<em>R</em>_p) for all ODT-SAMs initially increases, then decreases, and finally stabilizes at a constant value. The atomic force microscope analysis revealed a positive correlation between ODT concentration and surface characteristics. Specifically, both surface roughness and coverage increased as ODT concentration rose. Moreover, contact angle measurements demonstrated that higher ODT concentrations led to enhanced hydrophobicity of the ODT-SAMs. Morphological examination was performed using scanning electron microscopy. Fourier-transform infrared analysis confirmed the presence of characteristic functional groups indicating the formation of ODT-SAM on the copper surface. After immersion in NaCl solution, the characteristic bands became intensified, indicating structural disordering of the monolayer. The impedance data facilitated a comprehensive analysis of the SAMs' key properties. This examination encompassed crucial parameters such as: monolayer thickness, molecular tilt angle and surface coverage. The aging mechanism of ODT-SAMs was well studied by both electrochemical and surface analysis methods.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"830 ","pages":"Article 140808"},"PeriodicalIF":2.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145278060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Properties of Nb-doped TiO2 films prepared by grid-assisted magnetron sputtering at different substrate temperatures and Nb doping levels","authors":"Francisco Alfaro ,&nbsp;Aline M. Morais ,&nbsp;Rafael G. Delatorre ,&nbsp;Julio C. Sagás ,&nbsp;Fábio D. Origo ,&nbsp;Bruno L.D. Santos ,&nbsp;J. Stryhalski ,&nbsp;Waldemar A.A. Macedo ,&nbsp;Carlos J. Tavares ,&nbsp;Diego A. Duarte","doi":"10.1016/j.tsf.2025.140807","DOIUrl":"10.1016/j.tsf.2025.140807","url":null,"abstract":"<div><div>Nb-doped TiO₂ thin films were deposited on glass substrates by grid-assisted magnetron sputtering at different temperatures and Nb doping levels. The films were characterized by profilometry, X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, spectrophotometry, and X-ray photoelectron spectroscopy. Electrical and thermoelectric properties were evaluated using four-wire probe method and Seebeck coefficient. Results showed that substrate heating enhanced crystallinity and grain growth, while the Nb doping improved charge carrier transport. Chemical analysis confirmed Nb⁵⁺ states and Nb segregation toward the surface in films deposited at 300 °C. Electrical resistivity decreased by up to five orders of magnitude, reaching 10^-2 Ω·cm at Nb concentrations lower than 1.0 %. No thermoelectric effect was observed. Films exhibited average transmittances above 70 %. These findings demonstrate the critical role of substrate temperature and Nb doping level in tuning the multifunctional properties of Nb-doped TiO₂ thin films prepared by grid-assisted magnetron sputtering, highlighting their potential for transparent conducting applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140807"},"PeriodicalIF":2.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-oxide thin-film transistors with enhanced performance via implementation of stacked semiconductor/insulator multi-channel structures","authors":"Pei Yan ,&nbsp;Jiyuan Zhu ,&nbsp;Bojia Chen ,&nbsp;Jiong Liu ,&nbsp;Xinming Wu ,&nbsp;Xuefeng Wu ,&nbsp;David W. Zhang ,&nbsp;Xingli Zou ,&nbsp;Qingqing Sun ,&nbsp;Shen Hu ,&nbsp;Li Ji","doi":"10.1016/j.tsf.2025.140809","DOIUrl":"10.1016/j.tsf.2025.140809","url":null,"abstract":"<div><div>As display technology rapidly advances, there is an increasing demand for high-performance thin-film transistors (TFTs) to serve as pixel switching and driving modules. Oxide TFTs offer several advantages, including high mobility and high light transmittance. Moreover, the all-oxide structure facilitates integration with back-end-of-line (BEOL) compatible electronic devices. In this study, we introduce a multi-channel TFT structure based on Hf-doped In₂O₃ /HfO₂, fabricated using the supercycle growth method in atomic layer deposition (ALD) to enhance performance. We assess how the number of channels affects the performances of TFTs, particularly the field-mobility (<em>μ_FE</em>) and on-state current. Compared to mono-channel TFTs, the triple-channel TFTs exhibits superior electrical characteristics, with the <em>μ_FE</em> increasing by approximately 2.4 times, from 4.1 cm²V^-1s^-1 to 9.7 cm²V^-1s^-1, and a 3.2-fold increase in output current. Additionally, the triple-channel TFTs demonstrate an exceptional switch ratio (<em>I_on/I_off</em>) of 10⁷ and the subthreshold swing as low as 0.18 V/dec. The energy band discontinuity and electron affinity difference in the material heterostructure lead to the formation of quasi-2DEG channel at the interface, which explains the observed performance improvements. Based on these findings, we develop all-oxide TFTs using a low-temperature process (&lt;180 °C) through the all-ALD process, providing advantages for integrating TFTs with BEOL.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140809"},"PeriodicalIF":2.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simultaneous barrier reduction and effective doping in CdTe solar cells using CuBr","authors":"Banghua Liu ,&nbsp;Ziwei Xu ,&nbsp;Shiyu Yuan ,&nbsp;Fu You ,&nbsp;Xin Zhang ,&nbsp;Yunpu Tai ,&nbsp;Di Zhang ,&nbsp;Komiljon Yakubov ,&nbsp;Jingquan Zhang ,&nbsp;Chebotareva Alla ,&nbsp;Guanggen Zeng","doi":"10.1016/j.tsf.2025.140806","DOIUrl":"10.1016/j.tsf.2025.140806","url":null,"abstract":"<div><div>Introducing a back-contact material is a crucial strategy for enhancing the efficiency of cadmium telluride (CdTe) solar cells. This work pioneers the application of a solution-processed copper(I) bromide (CuBr) layer as an efficient back-contact for CdTe solar cells. The CuBr layer serves a dual purpose: it effectively reduces the back-contact barrier, as evidenced by the elimination of the upward bending in Mott-Schottky curves and the \"roll-over\" phenomenon in dark current density-voltage characteristics, and it acts as a source for copper doping into the CdTe absorber. This doping increases the hole concentration, leading to a significant enhancement in the apparent carrier density and a reduced saturation dark current density. Consequently, key device parameters were substantially improved, including an increase in open-circuit voltage (from 788 mV to 824 mV) and a reduction in series resistance (from 4.45 Ω·cm² to 2.90 Ω·cm²). Ultimately, an optimized device with an FTO/MZO/CdSe/CdTe/CuBr/Au structure achieved a power conversion efficiency of 14.7 %.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140806"},"PeriodicalIF":2.0,"publicationDate":"2025-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comprehensive study of CrN/AlCrN-based monolayers and architected multilayers","authors":"Yutao Zhang ,&nbsp;Corinne Nouveau ,&nbsp;Aurélien Besnard ,&nbsp;José Outeiro ,&nbsp;Alex Montagne ,&nbsp;Denis Lagadrillère ,&nbsp;Andrzej Kusiak ,&nbsp;Luc Imhoff","doi":"10.1016/j.tsf.2025.140804","DOIUrl":"10.1016/j.tsf.2025.140804","url":null,"abstract":"<div><div>Cr, CrN, and AlCrN monolayers and Cr/CrN/AlCrN multilayers were deposited on rough/mirror-polished tungsten carbide and silicon substrates by Direct Current magnetron sputtering. The multilayers were developed based on the optimized monolayers. In this paper, we introduce and discuss the optimization steps and performances of the AlCrN monolayers and the CrN/AlCrN-based multilayers. The influence of the deposition temperature and substrate bias voltage on the coating properties, the number of interfaces, and the thickness of CrN/AlCrN pairs were systematically studied for the monolayers and multilayers, respectively. The composition of the monolayers was determined by energy dispersive x-ray spectroscopy and verified by x-ray photoelectron spectrometry. Scanning electron microscopy observations permitted to define the microstructure and thickness of the coatings. Ball-on-disc tests were realized to determine the coefficient of friction and wear rate. The hardness and elastic modulus were calculated from nanoindentation tests. The adhesion was quantified by scratch-tests. The thermal conductivity measurement was obtained by Modulated Photo Thermal Radiometry. The optimized coatings have a dense and homogeneous surface morphology on WC<img>Co substrates, are well crystallized, present a grain size lower than 10 nm, a friction coefficient of 0.5, and low wear rates. The results indicate that the optimal AlCrN monolayers are obtained at 300 °C/-250 V. The optimized AlCrN monolayers also have tensile and mostly compressive stresses, a hardness of 25.8 GPa, an elastic modulus of 170 GPa, and a Lc2 critical load of 58 N. The optimal multilayers are the one with decreasing CrN/AlCrN pairs thickness from substrate to top layer and the one with a doubled number of interfaces. The multilayers have low residual stresses from -47.7 MPa to 44.8 MPa, a hardness from 16.1 to 24.8 GPa, an elastic modulus from 429 to 670 GPa, a Lc2 critical load from 47 to 52 N, a low and similar thermal conductivity from 1.95 to 2.42 W·m^-1·K^-1.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140804"},"PeriodicalIF":2.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The biennial TACT International Thin Films Conference (TACT 2023)","authors":"Kao-Shuo Chang,&nbsp;Yi-Cheng Lin,&nbsp;Ming-Tzer Lin,&nbsp;Jr-Jeng Ruan,&nbsp;Ta-Chin Wei,&nbsp;Yi-Jia Chen","doi":"10.1016/j.tsf.2025.140805","DOIUrl":"10.1016/j.tsf.2025.140805","url":null,"abstract":"","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140805"},"PeriodicalIF":2.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145333864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A systematic study on the influence of microtopography of aluminum alloy substrates on the formation kinetics and corrosion resistance of V/Zr-based conversion coatings","authors":"Jianzhong Li ,&nbsp;Mingshi Li ,&nbsp;Zhichun Cui ,&nbsp;Peidong Li","doi":"10.1016/j.tsf.2025.140803","DOIUrl":"10.1016/j.tsf.2025.140803","url":null,"abstract":"<div><div>The influence of aluminum alloy microtopography on the electrochemical activity, formation kinetics and corrosion resistance of V/Zr-based conversion coating (V/ZrCC) was investigated using electrochemical methods. The results indicate that the differences in surface roughness (R_a) and average peak-to-valley depth (R_z) of aluminum alloy substrates lead to differences in the electrochemical activity, coating formation kinetics, and corrosion resistance performance of V/ZrCC. The high R_a value increases the surface area and the active site, thereby the aluminum alloy substrate exhibiting high electrochemical activity. The aluminum alloy has the highest electrochemical activity when the R_a value is 0.52 μm. The R_z value has a significant effect on the formation kinetics and corrosion resistance of V/ZrCC, Optimal corrosion resistance (Charge Transfer Resistance (Rct) = 19.88 kΩ·cm²) occurs at R_z = 4.29 μm, while R_z &gt; 5.22 μm causes 34 % lower Rct due to incomplete coverage.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140803"},"PeriodicalIF":2.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145160019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}