Thin Solid Films最新文献

{"title":"SiC thin films: Nanosecond pulsed laser-deposition via Digital Twin approach and atom probe tomography characterizations","authors":"H G Prashantha Kumar ,&nbsp;Sree Harsha Choutapalli ,&nbsp;Nilesh J Vasa ,&nbsp;Tiju thomas ,&nbsp;Srinivasa Rao Bakshi","doi":"10.1016/j.tsf.2025.140620","DOIUrl":"10.1016/j.tsf.2025.140620","url":null,"abstract":"<div><div>This research presents the synthesis of silicon carbide (SiC) thin films using a nanosecond pulsed laser deposition method, combined with a Level -2 Digital Twin approach for real-time process optimization. Various target precursors were employed to fabricate SiC thin films, and the influence of these precursors on the material properties was investigated. The Digital Twin model provided dynamic real-time feedback, allowing precise control over the deposition parameters, improving consistency and identical windows throughout. Such deposited thin film exhibited an average surface roughness (Ra) and nanoindentation hardness measured in the range of 2 nm to 5 nm and range of 32 to 41 GPa for the SiC thin film respectively. Transmission Electron Microscopic (TEM) characterisations on lamellar thin film specimens revealed 558.9 ± 10 nm and 593.62 ± 10 nm thick film deposition for Spark Plasma Sintered (SPS) and Reaction Bonded (RB) SiC thin films followed by average of Si ∼ 50 at. %, C ∼ 48. at. % with the traces of O ∼ 0.43 at.% elemental composition distributions for both films analysed through Atom Probe Tomography (APT) reconstructions and reveals the impurities concentrations aluminium (Al), Nitrogen (N), Vanadium (V) &amp; Potassium (P) in both films with additional B at.% elements in reaction bonded SiC alone. Further, the impact of laser irradiation was witnessed in terms of change in resistance values attributed to laser assist activation of inherited and substitutional impurities in thin films with a scale of respective impurity concentrations.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"813 ","pages":"Article 140620"},"PeriodicalIF":2.0,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143351382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of wettability and antimicrobial activity of Ti-Cu and Ti-Ag thin film metallic glasses coated on the surface of 316L, CoCrW, Ti6Al4V alloy substrates produced by selective laser melting","authors":"Çetin Çimen ,&nbsp;Mehmet Karakan ,&nbsp;Didem Özgür ,&nbsp;Ezgi Pelin Yıldız","doi":"10.1016/j.tsf.2025.140605","DOIUrl":"10.1016/j.tsf.2025.140605","url":null,"abstract":"<div><div>This study includes examining the production of 316 L, CoCrW and Ti6Al4 V base materials using the selective laser melting method and investigating the properties of Ti-Cu and Ti-Ag thin film metallic glasses (TFMG) coated on the surfaces of these samples. Ti-Cu and Ti-Ag coatings were prepared by co-sputtering Ti-Cu and Ti-Ag targets in Argon gas plasma. Characterization of TFMG is focused on examining surface microstructure and physicochemical properties. Optical profilometry, X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy and Atomic Force Microscopy analyzes were performed to determine structural features. Wettability and antimicrobial activity were also evaluated. The results demonstrated that Ti-Cu coatings, with a water contact angle ranging from 27.6° to 30.31°, and Ti-Ag coatings, with a contact angle between 7.62° and 9.68°, exhibit hydrophilic surfaces. Furthermore, they show high antimicrobial activity against various bacterial species, consistent with previous studies. However, variations in effect were observed among yeast strains, with <em>Candida non-albicans</em> species showing greater resistance due to their biofilm formation and resistance to metal ions. In contrast, Ti-Cu and Ti-Ag coatings displayed strong antifungal activity against <em>Candida albicans</em>, indicating potential suitability for clinical applications such as catheters and surgical implants. Despite their high antimicrobial efficacy, the limited effects on certain microorganisms underscore the need for more comprehensive evaluations under various conditions and long-term in vivo studies.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140605"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface defect and charge carrier transport properties in substrate-dependent p-type tunnel oxide passivated contact layers","authors":"Dohyung Kim ,&nbsp;Yong-Jin Kim ,&nbsp;Minwoo Lee ,&nbsp;Kyuhyeon Im ,&nbsp;June Sung Park ,&nbsp;Munse Kim ,&nbsp;Sang Hee Lee ,&nbsp;Jae Sung Yun ,&nbsp;Yunae Cho ,&nbsp;Kyung Taek Jeong ,&nbsp;Sungeun Park ,&nbsp;Min Gu Kang ,&nbsp;Hee-eun Song","doi":"10.1016/j.tsf.2025.140604","DOIUrl":"10.1016/j.tsf.2025.140604","url":null,"abstract":"<div><div>Most tunnel oxide passivated contact (TOPCon) solar cells are based on a phosphorus-doped (n-type) Si wafer owing to its lifetime stability and defect tolerance compared to a boron-doped (p-type) Si wafer. A gallium-doped (p-type) Si wafer has been adopted due to its better stability under illumination and is now a mainstream for the passivated emitter and rear cell. To use the existing facilities and reduce the cost in the solar industries, it is important to understand the charge carrier transport properties and underlying mechanisms considering p-type TOPCon solar cells as potential candidates for industrial applications. Here, we investigate the correlation between charge transport properties and defect distributions on <em>p</em>⁺ poly-Si layers/SiO<em>_x</em>/two different p-type Si wafers, doped with boron and gallium, respectively. SiO<em>_x</em> and <em>p</em>⁺ poly-Si layers have been fabricated by in-situ low pressure chemical vapor deposition. Then, we perform carrier lifetime measurements using quasi-steady state photoconductance to quantify bulk and surface carrier lifetime. The electrochemical capacitance-voltage method is utilized to investigate the doping levels and profiles by measuring the active boron concentration. Furthermore, Kelvin probe force microscopy measurements are conducted to examine the local photovoltage and defect states on the film surfaces. We also perform current-voltage measurements to analyze the current behavior under both dark and light illumination conditions. Our findings uncover defects dependent on Si wafer types and variations in charge carrier dynamics within <em>p</em>+ poly-Si layers/SiO<em>_x</em>/p-type Si wafers. This study enhances our comprehension of charge carrier transport properties in p-type Si wafers, facilitating advancements in photovoltaic performance for p-TOPCon solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140604"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revealing plasmonic TiN films with low power radio-frequency magnetron sputtering technique","authors":"Atanu Samanta ,&nbsp;Ananya Chattaraj ,&nbsp;Sachin Srivastava ,&nbsp;Lukasz Walczak ,&nbsp;Archna Sagdeo ,&nbsp;Aloke Kanjilal","doi":"10.1016/j.tsf.2025.140603","DOIUrl":"10.1016/j.tsf.2025.140603","url":null,"abstract":"<div><div>Growth of plasmonic titanium nitride (TiN) film has recently attracted a considerable interest for various applications ranging from biosensing to optoelectronic devices. A room temperature deposition of high-quality TiN films by radio-frequency magnetron sputtering method with 60 W power is presented. Synchrotron based X-ray diffraction confirms the cubic phase formation in these films, while X-ray photoelectron spectroscopy (XPS) supports the existence of Ti-N bonds along with the presence of TiN_xO_y. Atomic force microscopy and scanning electron microscopy further suggest the development of a smooth surface. Optical characterisations by ellipsometry and ultraviolet-visible spectroscopy together establish the plasmonic behaviour of TiN films. A substantial negative value in the real component of the dielectric function is determined, where the partially filled Ti-3<em>d</em> orbitals near the Fermi level is evidenced from the valence band XPS analysis. The observed results therefore confirm that the plasmonic behaviour of the present TiN films is auspicious for (opto)electronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140603"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochromic properties of tetrabutylammonium perchlorate-doped polypyrrole/ nanocellulose composite films","authors":"Sabina Jusufovic ,&nbsp;Gizem Yildirim Bastemur ,&nbsp;Dilek Evecan ,&nbsp;Sabriye Percin Ozkorucuklu ,&nbsp;Esra Zayim ,&nbsp;Goksenin Kalyon ,&nbsp;Zeki Candan ,&nbsp;Ekrem Durmaz ,&nbsp;Ayhan Tozluoglu ,&nbsp;Ayse Erol","doi":"10.1016/j.tsf.2025.140606","DOIUrl":"10.1016/j.tsf.2025.140606","url":null,"abstract":"<div><div>This study investigates electrochromic properties of tetrabutylammonium perchlorate (TBAP)-doped polypyrrole (PPy) and PPy/Nanocellulose (NC) composite films, where TBAP-doped PPy/NC composites were synthesized with various NC content ranging from 0 % to 100 % by volume in 0.1 M pyrrole solution and deposited on fluorine-doped tin oxide (FTO) glass using potentiostatic polymerization. The optimum polymerization time for depositing a uniform, adhesive and stable films on FTO with higher optical contrast between bleached and colored states are found to be 10 s at a constant voltage of 1.2 V. To compare the electrochromic properties of NC-free and NC-containing TBAP-doped PPy films, cyclic voltammetry (CV), chronoamperometry (CA), and optical transmittance spectroscopy were carried out in 0.1 M TBAP electrolyte. A reversible color change from yellow at – 0.6 V (bleached state) to blue gray at + 0.6 V (colored state) is observed for %40 NC-containing TBAP-doped PPy composite film. CV measurements at the potential between – 0.8 V and + 0.8 V show an increase at the oxidation and reduction peak currents up to 60 % NC in TBAP-doped PPy, but the highest optical contrast and uniformity is observed for 40 % NC-containing composite film. And scanning electron microscopy images reveal that surface morphology changes and cluster/agglomerations on the surface of the films are formed when the %NC value exceeds 60 %. Of the NC-containing composite films, the 40 % NC-containing TBAP-doped PPy composite film exhibits the best adhesion to FTO substrate. Furthermore, the highest optical contrast (25.9 % at 700 nm) is observed for %40 NC-containing TBAP-doped PPy when compared to NC-free TBAP-doped PPy film (18.7 % at 700 nm). Therefore, PPy/NC composite with 40 % volume ratio of NC in PPy was selected for further CV and CA experiments. Compared to NC-free films, 40 % NC-containing TBAP-doped PPy exhibits faster switching time (1.16 s), higher optical contrast (25.9 % at 700 nm), higher coloration efficiency (65.6 cm²/C), and better uniformity on FTO. Our results may lead to the design of a high-performance electrochromic devices using NC<img>Conductive Polymers, with electrochromic and mechanical properties that can be adjusted through NC composition, especially to create flexible composites with enhanced mechanical strength.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140606"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Use of fractal surface parameters for mobility estimation in InSb/GaAs structures","authors":"M.A. Sukhanov ,&nbsp;A.K. Bakarov ,&nbsp;K.S. Zhuravlev ,&nbsp;A.G. Kolmakov ,&nbsp;A.A. Kolmakova","doi":"10.1016/j.tsf.2025.140608","DOIUrl":"10.1016/j.tsf.2025.140608","url":null,"abstract":"<div><div>InSb-based heterostructures are commonly used for the fabrication of infrared photodetectors, magnetic field sensors, transistors. For the most applications, heterostructures are grown on semi-insulating substrates like Si, GaAs, Ge, which have a large lattice mismatch with respect to InSb<strong>.</strong> Strain relaxation in heterostructures leads to generation of a large number of microtwins, dislocations, and stacking faults that significantly device performance. Defect interaction in heterostructures leads to formation of an irregular surface microstructure, which is uninformative to characterize by Euclidean geometry. Multifractal approach was used to analyze surface morphology, studied by atomic force microscopy. It was shown that both multifractal parameters of the surface structure: the Rényi entropy and structure order degree are determined by hillocks. Even more surprising was the finding of correlation between multifractal parameters and electron mobility. Analysis of a composition of structural defects showed that the correlation is due to proportionality of density of dislocations and microtwins, which make the main contribution to electron scattering. The study opens up exciting possibilities for controlling electron mobility in heterostructures in which dislocations make a major contribution to electron scattering or their density is proportional to the density of main scattering centers.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140608"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dense Al2O3 films prepared by high power impulse magnetron sputtering at pulsed kV bias","authors":"Dongjie Yang ,&nbsp;Yaoyao Liu ,&nbsp;Xiang Zhang ,&nbsp;Shusheng Chen ,&nbsp;Xiaowei Wang ,&nbsp;Yu Liao ,&nbsp;Xiaokai An ,&nbsp;Yanfei Zhao ,&nbsp;Lingjie Chen ,&nbsp;Suihan Cui ,&nbsp;Liangliang Liu ,&nbsp;Ricky K Y Fu ,&nbsp;Paul K Chu ,&nbsp;Zhongzhen Wu","doi":"10.1016/j.tsf.2025.140611","DOIUrl":"10.1016/j.tsf.2025.140611","url":null,"abstract":"<div><div>Al₂O₃ films are often used in electronic and other devices for surface protection due to their excellent insulating and mechanical properties, but these properties depend on the film density. Conventional magnetron sputtering used industrially to deposit Al₂O₃ films faces challenges in density regulation, and many Al₂O₃ coatings have poor densities. Herein, negative kV biases are applied to the substrate in high-power impulse magnetron sputtering (HiPIMS) to produce the desirable high-energy ions to densify the Al₂O₃ films. Our results indicate that the high pulsed bias also mitigates arcing during the deposition of insulating alumina films. By increasing the pulsed voltage, the film density increases, resulting in higher optical transparency, better insulating and mechanical properties, as well as superior corrosion resistance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140611"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding grain growth and grain boundary inversion in CdS thin films by CdI2 activation","authors":"Suman Kumari ,&nbsp;G. Chasta ,&nbsp;D. Suthar ,&nbsp;Himanshu ,&nbsp;N. Kumari ,&nbsp;M.S. Dhaka","doi":"10.1016/j.tsf.2024.140593","DOIUrl":"10.1016/j.tsf.2024.140593","url":null,"abstract":"<div><div>The post deposition halide treatment to Cadmium (Cd) based solar cell devices is recognized as vital step for passivation of grain boundaries and influences the performance parameters drastically. In view of these facts, herein, a concise investigation on the impact of post-deposition Cadmium iodide (CdI₂) treatment on the physical properties of thermally evaporated Cadmium sulfide (CdS) films is carried out at 100 °C, 200 °C and 300 °C temperature. The structural, electrical, optical and topographical properties are explored by using characterization tools concerned. The crystallographic results reveal that the films are polycrystalline in nature having mixed hexagonal (wurtzite) and cubic (zinc blende) phases and preferentially oriented along (220) cubic plane. Augmentation in crystallite size of CdS films from 34 nm to 41 nm is observed with CdI₂ treatment where optical energy band gap is tuned in 2.33–2.39 eV range with treatment temperature. The broad photoluminescence emission peak is achieved for all the CdS films in the spectral range of 660–710 nm which is associated to red emission band where intensity of peak is continuously enhanced with temperature. The electrical study shows Ohmic nature of the as grown and CdI₂ treated CdS films where conductivity is lessened for treated films as compared to the as grown films. Surface topographical analysis reveals to formation of almost nanospherical grains having variable size at different activation temperature. The transmittance of &gt;75 % beyond 600 nm wavelength is observed for CdS films activated at 300 °C. The findings revealed that CdS films treated at 300 °C are suitable to use as window layer in fabrication of Cd based thin film solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140593"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The impact of willemite Zn2SiO4 phase in B1 to B2 type structural phase transformation in CdxZn1-xO composite thin films","authors":"Arkaprava Das ,&nbsp;Marcin Zając ,&nbsp;Wei-Hsiang Huang ,&nbsp;Chi-Liang Chen ,&nbsp;Asokan Kandasami ,&nbsp;Carla Bittencourt","doi":"10.1016/j.tsf.2025.140616","DOIUrl":"10.1016/j.tsf.2025.140616","url":null,"abstract":"<div><div>This study explores the influence of willemite Zn₂SiO₄ phase upon the structural phase transformation from the B1 (NaCl) to B2 (CsCl) phase in Cd_xZn_1-xO (<em>x</em> = 0.20, and 0.60) composite thin films. X-ray diffraction and Raman spectroscopy analyses show that at an annealing temperature of 900 °C, the B2 phase of CdO nanoparticles becomes achievable with a relative atomic concentration of 60 % Cd, whereas it is absent with 20 % Cd concentration. The presence of the willemite Zn₂SiO₄ phase for 60 % Cd concentration at 900 °C annealing temperature, which plays an important role in this transformation, was confirmed by analyzing the Zn <em>L</em>_3,2 and O <em>K</em> edges X-ray absorption near edge spectroscopy, Si 2<em>p</em> edge X-ray photoelectron spectroscopy, and a broad emission in the green spectral region of the photoluminescence spectra. Electron microscopy indicates the out-diffusion of Zn₂SiO₄ nanoparticles from the film-substrate interface to the film surface, facilitated by the kinetic energy gained during high-temperature thermal annealing. The larger unit cell volume of the trigonal Zn₂SiO₄ phase was identified as inducing the necessary local pressure to trigger the B1 to B2 phase transformation in the CdO nanoparticles. Additionally, simulations using Zn <em>K</em> edge extended absorption fine structure suggest that the local environment around the Zn atoms remain unchanged during phase transition. Cross-sectional transmission electron microscopy images reveal the presence of an amorphous SiO_x layer at the film-substrate interface, facilitating atomic inter-diffusion and leading to the formation of the Zn₂SiO₄ nanoparticles. It is shown that a Cd concentration exceeding 40 % in the ZnO matrix enables the achievement of the experimentally challenging high-pressure B2 phase.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140616"},"PeriodicalIF":2.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of glass titanium silicon at different compositions grown by thermal evaporation and sputtering techniques","authors":"Heloisa H.P. Silva ,&nbsp;Tanna E.R. Fiuza ,&nbsp;Rodrigo V. Portugal ,&nbsp;Edson R. Leite ,&nbsp;Marcelo A. de Farias ,&nbsp;Jefferson Bettini","doi":"10.1016/j.tsf.2025.140613","DOIUrl":"10.1016/j.tsf.2025.140613","url":null,"abstract":"<div><div>Metallic glasses, in bulk and thin film forms, are of significant interest in scientific research due to their unique properties and wide-ranging engineering applications. Key attributes such as structure, electrical conductivity, surface roughness, mechanical strength, corrosion resistance, and wear resistance determine their potential uses. This study investigates titanium-silicon (TiSi) metallic glass thin films with varying compositions grown via thermal evaporation and sputtering techniques. Comprehensive characterization methods were employed to analyze these films. The composition was determined using energy-dispersive spectroscopy and validated with electron energy loss spectroscopy, which also monitored oxidation processes. Transmission electron microscopy confirmed the films' homogeneity and absence of segregation, such as clusters or nanoparticles. Structural properties were assessed using selected-area electron diffraction and electron pair distribution functions. Thickness and roughness measurements were obtained via atomic force microscopy, while electrical properties were evaluated using the four-probe method. Hydrophobicity was determined through contact angle goniometry with water. This work examines how TiSi thin film properties vary with composition, enabling the design of surface composite materials with tailored functionalities. A specific TiSi composition was identified as suitable for use as a support material in transmission electron microscopy grids.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140613"},"PeriodicalIF":2.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}