Thin Solid Films最新文献

Polymorph modulation of sexithiophene crystals in sexithiophene and pentacene mixed thin films prepared by codeposition 共沉积制备六噻吩与五苯混合薄膜中六噻吩晶体的多晶型调制

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-24 DOI: 10.1016/j.tsf.2025.140732

Tomo Horota , Yuga Takeuchi , Takeshi Watanabe , Satomi Fujisaki , Haruki Kudo , Ryuto Sato , Noriyuki Yoshimoto , Toshiyuki Kakudate

引用次数: 0

Effect of coating thickness on the growth rates, optical properties and microstructure of TiO2 thin films grown via thermal and plasma enhanced atomic layer deposition 涂层厚度对热等离子体增强原子层沉积TiO2薄膜生长速率、光学性能和微观结构的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-21 DOI: 10.1016/j.tsf.2025.140730

M.G. Ambartsumov, V.А. Tarala, О.M. Chapura

{"title":"Effect of coating thickness on the growth rates, optical properties and microstructure of TiO2 thin films grown via thermal and plasma enhanced atomic layer deposition","authors":"M.G. Ambartsumov, V.А. Tarala, О.M. Chapura","doi":"10.1016/j.tsf.2025.140730","DOIUrl":"10.1016/j.tsf.2025.140730","url":null,"abstract":"<div><div>Titanium dioxide (TiO<sub>2</sub>) thin films were synthesized on single-crystalline silicon (111) substrates using thermal (TALD) and plasma-enhanced atomic layer deposition (PEALD) methods in a self-limited growth regime with different numbers of deposition cycles (250, 500, 750, 1000, 1500 and 2000). The synthesized TiO<sub>2</sub> layers were studied by ellipsometry, X-ray diffraction analysis, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The findings of the study indicated that during the initial stages of growth, the silicon substrate exerted an inhibitory effect on the degree of nucleation of crystalline titanium dioxide films, resulting in the formation of coatings consisting of nanocrystallites in an amorphous matrix. Moreover, for titanium dioxide coatings synthesized by the PEALD method, compared to TiO<sub>2</sub> films obtained by the TALD method, this effect was more pronounced. As the thickness of the titanium dioxide films increased, an increase in the nanocrystallite sizes, the crystallization of the amorphous regions and the formation of a continuous polycrystalline coating were observed. Moreover, upon reaching the critical layer thickness, a transformation in the type of internal mechanical stress of the structure was identified, shifting from negative compressive to positive tensile stress, associated with an increased influence of the substrate on the structure of the titanium dioxide coating. It was observed that an increase in the thickness of the coating, at a number of cycles exceeding 1000, resulted in the stabilization of the internal mechanical stress and the cessation of the inhibition process.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140730"},"PeriodicalIF":2.0,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144471897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stress modulation in silicon nitride layers grown by plasma-enhanced chemical vapor deposition 等离子体增强化学气相沉积制备氮化硅层的应力调制

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-19 DOI: 10.1016/j.tsf.2025.140729

Ali Koyucuoglu, Ina Ostermay, Olaf Krüger

{"title":"Stress modulation in silicon nitride layers grown by plasma-enhanced chemical vapor deposition","authors":"Ali Koyucuoglu, Ina Ostermay, Olaf Krüger","doi":"10.1016/j.tsf.2025.140729","DOIUrl":"10.1016/j.tsf.2025.140729","url":null,"abstract":"<div><div>In this work, plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN<sub>x</sub>) layers deposited at up to 600 °C are investigated in terms of the influence of different deposition parameters on the mechanical stress. Elastic recoil detection analysis (ERDA) is used to determine the absolute elemental concentration distribution and Fourier-transform infrared spectroscopy (FTIR) is used to identify the bonding configuration between the different elements. The combination of ERDA and FTIR analyses provides an understanding of the nitrogen- and hydrogen-induced influence on film stress of the SiN<sub>x</sub> layers. Increased temperature and the use of a low frequency excitation result in a higher nitrogen (N) and a lower hydrogen (H) content. This also correlates with changes in the stress of the films. Higher nitrogen and lower hydrogen values are associated with increased compressive stress. The FTIR analyses display absorption bands that indicate Si-N, Si-H and N<img>H bonds. Although both the increase in the Si-N absorption band peak and the decrease in the Si-H peak are associated with greater compressive stress, the measurements indicate that Si-N has the largest influence on the stress. These results illustrate the role of nitrogen in modulating the stress properties of PECVD SiN<sub>x</sub> layers providing an understanding for optimized deposition parameters to achieve desired stress characteristics.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140729"},"PeriodicalIF":2.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144471898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modification of surface conduction band minimum in Cu(In1-x,Gax)Se2 photoelectrodes under CO2-saturated conditions co2饱和条件下Cu(In1-x,Gax)Se2光电极表面导带最小值的修饰

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-16 DOI: 10.1016/j.tsf.2025.140721

Kazuma Okada, Mutsumi Sugiyama

{"title":"Modification of surface conduction band minimum in Cu(In1-x,Gax)Se2 photoelectrodes under CO2-saturated conditions","authors":"Kazuma Okada, Mutsumi Sugiyama","doi":"10.1016/j.tsf.2025.140721","DOIUrl":"10.1016/j.tsf.2025.140721","url":null,"abstract":"<div><div>In this study, two strategies to modulate the conduction band minimum (CBM) of Cu(In,Ga)Se<sub>2</sub> (CIGS) photoelectrodes were investigated to enhance their photoelectrochemical (PEC) performance for CO<sub>2</sub> reduction. First, the surface Ga composition of CIGS film was systematically varied, demonstrating that increasing the Ga content elevates the CBM above the CO<sub>2</sub> reduction potential, thereby enhancing the driving force for reduction reactions and increasing photocurrent density. Second, the effect of CsF post-deposition treatment (CsF-PDT) was evaluated, revealing that CsF-PDT modifies the band structure through the formation of Cs-containing compounds (e.g., CsInSe₂), which reduce grain boundary recombination and improve carrier lifetime, as evidenced by time-resolved photoluminescence. Electrochemical impedance spectroscopy confirmed that the interfacial charge transfer resistance was reduced after CsF-PDT. These combined modifications increased the photocurrent density and onset potential, improving PEC performance. This work highlights the importance of CBM tuning and interface engineering in CIGS photoelectrodes, and will provide insights for future optimizations in solar-driven CO<sub>2</sub> reduction efficiency.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140721"},"PeriodicalIF":2.0,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144307612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On measuring the temperature coefficient of resistivity and the thermal expansion coefficient of conductive thin films 导电薄膜电阻率温度系数和热膨胀系数的测量

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-16 DOI: 10.1016/j.tsf.2025.140727

Gerhard Fischerauer

引用次数: 0

Characterization of pulsed plasma nitriding and physical vapor deposition duplex-treated CrAlN coatings 脉冲等离子体氮化和物理气相沉积双相处理CrAlN涂层的表征

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-14 DOI: 10.1016/j.tsf.2025.140726

Xiankun Lin , Dongxin Fan , Fuqiu Li , Boying Qin , Tonghan Yang , Di Tan , Shizhang Dai

引用次数: 0

Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis 反应溅射制备抗反射Ta2O5和TaOxNy薄膜的多技术表征：耦合x射线光电子能谱、扫描/透射电子显微镜和离子束分析

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-14 DOI: 10.1016/j.tsf.2025.140725

Florian Chabanais , Babacar Diallo , Aissatou Diop , Angélique Bousquet , Thierry Sauvage , Béatrice Plujat , Sébastien Quoizola , Audrey Soum-Glaude , Laurent Thomas , Éric Tomasella , Antoine Goullet , Mireille Richard-Plouet

{"title":"Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis","authors":"Florian Chabanais , Babacar Diallo , Aissatou Diop , Angélique Bousquet , Thierry Sauvage , Béatrice Plujat , Sébastien Quoizola , Audrey Soum-Glaude , Laurent Thomas , Éric Tomasella , Antoine Goullet , Mireille Richard-Plouet","doi":"10.1016/j.tsf.2025.140725","DOIUrl":"10.1016/j.tsf.2025.140725","url":null,"abstract":"<div><div>TaO<sub>x</sub>N<sub>y</sub> thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N<sub>2</sub>/O<sub>2</sub> plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 °C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta<sub>2</sub>O<sub>5</sub>) to oxynitride and nitride environments (TaO<sub>x</sub>N<sub>y</sub> and Ta<sub>3</sub>N<sub>5</sub>). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140725"},"PeriodicalIF":2.0,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical solutions for layer and substrate parameters determination using amplitude reflection coefficients 用振幅反射系数确定层和衬底参数的解析解

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-13 DOI: 10.1016/j.tsf.2025.140722

Stoyan C. Russev, Gichka G. Tsutsumanova, Velizara Ts. Tsanova

引用次数: 0

The influence of thermal annealing on microstructure and resistivity of Pt films with different thickness 热处理对不同厚度Pt薄膜微观结构和电阻率的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-13 DOI: 10.1016/j.tsf.2025.140723

Lingcong Zhang , Wei Chen , Li Qiao , Qifeng Cui , Zhiqing Qiang , Peng Wang

{"title":"The influence of thermal annealing on microstructure and resistivity of Pt films with different thickness","authors":"Lingcong Zhang , Wei Chen , Li Qiao , Qifeng Cui , Zhiqing Qiang , Peng Wang","doi":"10.1016/j.tsf.2025.140723","DOIUrl":"10.1016/j.tsf.2025.140723","url":null,"abstract":"<div><div>The thermal stability of platinum film dominates the performance when the film electrodes operate under extreme conditions, such as high temperature. In this study, Pt films with thicknesses of 50, 200, and 400 nm were deposited by magnetron sputtering and annealed in different conditions to investigate the microstructure and resistivity changes. The results show that thicker films exhibit superior dewetting resistance. For Pt films with 50 nm thickness, bumps and pits appear at the surface after vacuum annealing at 773 K, while the bumps grow and the pits transform into voids at 973 K. These defects further expand and separate the films into island-like structures at 1173 K. Voids appear at the surface of Pt-200 after vacuum annealing at 1173 K and atmospheric annealing at 1073 K, which appear at the surface of Pt-400 after vacuum and atmospheric annealing at 1173 K, and island-like structures are observed at 1273 K. Pt films exhibit superior thermal stability in atmospheric environment. All films develop numerous isolated island-like structures at surfaces after vacuum annealing at 1273 K, while only Pt-50 exhibits a surface with a serpentine structure after atmospheric annealing at 1273 K. Below 873 K, the film resistivity decreases with the temperature increasing, primarily driven by recrystallization-mediated elimination of lattice defects such as grain boundaries, dislocations, and vacancies. Above 873 K, the film resistivity increases with the temperature increasing, because dewetting damages the film's structural integrity. These findings provide key design guidelines for Pt-based components operating in harsh working environment to explore the method to improve the high temperature stability of Pt films, and optimize the magnetron sputtering process and guide the application in temperature sensitive devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140723"},"PeriodicalIF":2.0,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of the parameters of the reactive dual magnetron sputtering process on the properties of the ZrO2-Y2O3 electrolyte 反应性双磁控溅射工艺参数对ZrO2-Y2O3电解质性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-11 DOI: 10.1016/j.tsf.2025.140720

Andrey A. Solovyev , Anna V. Shipilova , Sergey V. Rabotkin , Vladimir O. Oskirko

{"title":"Influence of the parameters of the reactive dual magnetron sputtering process on the properties of the ZrO2-Y2O3 electrolyte","authors":"Andrey A. Solovyev , Anna V. Shipilova , Sergey V. Rabotkin , Vladimir O. Oskirko","doi":"10.1016/j.tsf.2025.140720","DOIUrl":"10.1016/j.tsf.2025.140720","url":null,"abstract":"<div><div>Yttria-stabilized zirconia (YSZ) thin films, used as electrolytes in solid oxide fuel cells (SOFCs), have been deposited by reactive dual magnetron sputtering from single metal Zr and Y targets. Deposition was performed in poisoned mode using a high-power impulse magnetron sputtering power supply. The Y<sub>2</sub>O<sub>3</sub> content in YSZ films was varied by changing the Y magnetron power. YSZ films with a Y<sub>2</sub>O<sub>3</sub> content close to 8 mol % were obtained at Zr and Y magnetron powers of 1000 and 300 W, respectively, and a working pressure of 0.3 Pa. Anode-supported single cells with 5 µm thick YSZ electrolyte and La<sub>0.6</sub>Sr<sub>0.4</sub>CoO<sub>3</sub> cathode were fabricated and tested. An open circuit voltage of 1.05 V and a maximum power density of 868 mW/cm<sup>2</sup> were achieved at 800 °C using H<sub>2</sub> as fuel and air as oxidant. The structural and electrochemical characteristics of a single SOFCs with YSZ electrolyte deposited by dual magnetron sputtering of single metal Zr and Y targets and also Zr-Y alloy targets are compared. It has been found that the power supply parameters of the magnetron discharge, in particular the peak power density, affect the formation of residual stresses in the deposited films, leading to the formation of blister-like defects on the surface. This problem can be solved by reducing the peak power density of the discharge.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140720"},"PeriodicalIF":2.0,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144296800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0