Thin Solid Films最新文献

{"title":"Effect of ZnO seed layer annealing for growth of oriented ZnO nano columns towards superior ultra-violet detection","authors":"Bholanath Ghosh ,&nbsp;Ranajit Ghosh","doi":"10.1016/j.tsf.2026.140887","DOIUrl":"10.1016/j.tsf.2026.140887","url":null,"abstract":"<div><div>Oriented one-dimensional (1D) semiconducting nanostructures play a crucial role in advancing optoelectronic applications, particularly in ultraviolet (UV) detection. In this work, we have investigated the influence of ZnO nano column (NC) orientation on the enhancement of UV sensitivity, where the degree of orientation was controlled by varying the annealing temperature of the ZnO seed layer. ZnO seed layers (deposited on glass substrates) were annealed at three different temperatures (350°C, 450°C, and 550°C), followed by hydrothermal growth of ZnO NCs on the seeded layers. The ZnO NCs grown on the seed layer annealed at 550°C exhibited highly c-axis orientation, yielding a remarkably high photosensitivity (I_ph/I_d) of 1.66 × 10⁵, a responsivity of 10.9 A/W, and a specific detectivity of 4.38 × 10¹³ Jones at a wavelength of 385 nm. This study provides valuable insight into the relationship between ZnO nanostructure orientation and UV detection performance. The fabricated UV detectors exhibited excellent operational stability, maintaining a consistent UV response over four ON–OFF illumination cycles, along with reproducible photo- and dark-current values with a variation of ±4.3 %.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140887"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of co-evaporated CIGS5 (Cu0.65In1.75Ga1.4S5) lamellar material used as absorber in thin film solar cell","authors":"Amal Belhcen ,&nbsp;Ludovic Arzel ,&nbsp;Adèle Renaud ,&nbsp;Eric Gautron ,&nbsp;Catherine Guillot-Deudon ,&nbsp;Stéphane Jobic ,&nbsp;Maria Teresa Caldes ,&nbsp;Nicolas Barreau","doi":"10.1016/j.tsf.2026.140875","DOIUrl":"10.1016/j.tsf.2026.140875","url":null,"abstract":"<div><div>Single-phase lamellar CIGS₅ (Cu_0.65In_1.75Ga_1.4S₅, nominal composition) thin films were synthesized using co-evaporation. Structural, morphological and optoelectronic properties of these films have been investigated. The optical bandgap was calculated at approximately 2.1 eV, but extended band tails hinder an accurate determination. Such behavior may be related to the high density of point defects inherent in the crystal structure of CIGS₅, which exhibits intrinsic cationic vacancies and mixed site occupancy. This results in compensated semiconducting behavior, with no clearly identified charge carriers. Nevertheless, photoelectrochemical measurements suggest an extremely weak excess of electrons. Diverse solar cell architectures with CIGS₅ as absorber were fabricated. All exhibit very low efficiency. These poor performances are discussed and are attributed to the intrinsic optoelectronic properties of CIGS₅ material in ambient conditions due to a charge compensating effect.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140875"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductivity mechanisms of the nanocomposite SiOx(Si)&CuyO(Cu) films","authors":"Oleh Bratus ,&nbsp;Antonina Kykot ,&nbsp;Anton Semeniuk ,&nbsp;Slawomir Prucnal ,&nbsp;Pavels Onufrijevs ,&nbsp;Jevgenijs Kaupuzs ,&nbsp;Svitlana Bugaychuk ,&nbsp;Tetiana Sydorenko ,&nbsp;Volodymyr Ilchenko ,&nbsp;Volodymyr Marin ,&nbsp;Igor Sokolovskyi ,&nbsp;Tomash Sabov ,&nbsp;Anatoliy Evtukh","doi":"10.1016/j.tsf.2026.140874","DOIUrl":"10.1016/j.tsf.2026.140874","url":null,"abstract":"<div><div>Nanocomposite films were obtained by simultaneous sputtering of the combined Cu/Si target in the O₂/Ar atmosphere by ion-plasma sputtering. As a result of the investigation of the structure of the films by X-ray diffraction, crystalline inclusions of Cu, Cu₂O were detected іn the as-deposited film and Cu, Cu₂O, CuO in the one annealed at temperature <em>T</em> = 400°C. The main mechanisms of electron transport through nanocomposite SiO_x(Si)&amp;Cu_yO(Cu) films containing Cu nanoparticles and amorphous Si inclusions have been established. In the low voltage range, annealing of nanocomposite SiO_x(Si)&amp;Cu_yO(Cu) films leads to a redistribution of the density of electronic states and the concentration of the traps near the Fermi level, which changes the superposition of ohmic conductivity with the Mott, Efros-Shklovskii, Arrhenius mechanisms. In the region of low temperatures and medium voltages the Poole-Frenkel mechanism is realized for both samples. But at the higher measurement temperatures 170 K &lt; <em>T</em> &lt; 350 K the space-charge-limited current mechanism with the exponential distribution of traps in the band gap is revealed for the initial and annealed films. In the range of low temperatures and high voltages trap-assisted tunneling is observed for the initial sample. The dielectric-metal transition was detected in the case of initial films in the high voltage range. The effect of temperature annealing of nanocomposite SiO_x(Si)&amp;Cu_yO(Cu) films on their electrical conductivity is the consequence of their structural transformation, which leads to the change in the concentration and energy position of electron traps in the band gap, which participate in conductivity.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140874"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146049150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectric breakdown and reliability of thin film insulators for high-voltage microelectromechanical systems applications","authors":"Michael N. Getz ,&nbsp;Abélia Ellingsen ,&nbsp;Runar Dahl-Hansen ,&nbsp;Enrique Escobedo-Cousin ,&nbsp;Elizaveta Vereshchagina","doi":"10.1016/j.tsf.2026.140876","DOIUrl":"10.1016/j.tsf.2026.140876","url":null,"abstract":"<div><div>The growing demand for miniaturized and digitally integrated systems has accelerated the adoption of microelectromechanical systems (MEMS) across high-voltage applications, including electroseparation, microplasmas, and electrospraying. As these applications often operate in the kV range, dielectric reliability becomes a critical design consideration. This study presents a controlled, side-by-side comparison of breakdown behaviour, leakage current, and process compatibility of thermal SiO₂, plasma-enhanced chemical vapour deposition SiO₂, Low-pressure chemical vapour deposition SiN_x, and atomic layer deposition (ALD)-Al₂O₃ using capacitive test structures with comparable film thicknesses. Thermal SiO₂ exhibited the highest dielectric strength, reaching high fields of up to 24 MV/cm for a 54 nm dry oxide, although its ≥1000 °C processing temperature limits post-metallization compatibility. Among low-temperature options, ALD-Al₂O₃ demonstrated the most promising performance, with the best-performing process variation achieving a median breakdown field of 14.8 MV/cm and a median leakage current of 11 nA/cm² at 8 MV/cm for a 61 nm film deposited at 220 °C and annealed at 450 °C. These values exceed those reported for comparable thicknesses, highlighting the sensitivity of dielectric performance to both deposition and annealing conditions. The findings provide practical guidance for selecting dielectric materials that ensure substrate insulation reliability in high-voltage MEMS applications, balancing electrical performance with fabrication constraints.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140876"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring multifunctional properties of Co80La20 thin films via annealing and substrate engineering for advanced spintronic and optoelectronic applications","authors":"Shih-Hung Lin ,&nbsp;Yung-Huang Chang ,&nbsp;Yuan-Tsung Chen ,&nbsp;Yu-Chieh Liao ,&nbsp;Yun-Sheng Zheng ,&nbsp;Huang-Wei Chang","doi":"10.1016/j.tsf.2026.140866","DOIUrl":"10.1016/j.tsf.2026.140866","url":null,"abstract":"<div><div>Nanostructured cobalt lanthanum (Co₈₀La₂₀) thin films with thicknesses of 10–50 nm were deposited on glass and silicon (Si)(100) substrates by direct current (DC) magnetron sputtering and subsequently annealed at 100, 200, and 300 °C. Structural analysis via X-ray diffraction (XRD) and atomic force microscopy (AFM) revealed improved crystallinity, grain growth, and increased surface roughness with annealing. Magnetic force microscopy (MFM) demonstrated a transition from fragmented to well-aligned stripe-like magnetic domains, associated with enhanced in-plane magnetic anisotropy. Magnetic characterization confirmed soft magnetic behavior, showing reduced coercivity (Hc) and increased remanence magnetization (Mr) after annealing. Mechanical measurements indicated significant increases in hardness and Young’s modulus, attributed to grain boundary strengthening and defect reduction. Optical transmittance decreased with increasing film thickness (t_f) and roughness due to enhanced scattering, while electrical conductivity improved as a result of increased carrier mobility and reduced resistivity, despite a minor decrease in carrier concentration after annealing. This work highlights the synergistic effect of annealing temperature (T_A) and substrate crystallinity on tuning the structural, magnetic, mechanical, optical, and electrical properties of Co₈₀La₂₀ thin films. The findings demonstrate their promising potential for multifunctional applications including flexible spintronic devices, magnetic sensors, and transparent conductive films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140866"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Relation between surface morphology, facet selection, and crystal orientation in electroless copper deposits on polycrystalline copper substrates","authors":"Ralf Brüning ,&nbsp;Abhijit Singh ,&nbsp;Sawyer Stanley ,&nbsp;Mehrad Hajati ,&nbsp;Tobias Bernhard ,&nbsp;Sascha Dieter ,&nbsp;Grégoire Dietrich","doi":"10.1016/j.tsf.2026.140882","DOIUrl":"10.1016/j.tsf.2026.140882","url":null,"abstract":"<div><div>The relationship between surface morphology and crystal orientation in polycrystalline films is investigated using a quantitative experimental approach that analyzes hundreds of crystals and identifies thousands of facets. Four industry-relevant electroless copper deposits used for microvia filling in high-density interconnect printed circuit boards are examined. The reliability of copper–copper interlayer connections depends critically on the surface characteristics of the electroless copper layer prior to subsequent electrodeposition. Electroless copper films deposited from baths stabilized with sodium cyanide or 2,2′-bipyridine, each prepared with and without nickel additives, are characterized. Surface topography measured by atomic force microscopy is correlated with crystal orientation data obtained by electron backscatter diffraction to identify the crystallographic facet types present at the surface. Deposits from cyanide-stabilized baths exhibit angular surface morphologies with smooth low-index {100} and {111} facets oriented parallel to the surface. Grains with a [110] orientation display increased roughness due to alternating {110} and {100} facets. In contrast, deposits from 2,2′-bipyridine-stabilized baths show more gradual facet transitions and a broader distribution of facet types. Statistical analysis reveals distinct correlations between crystal orientation and surface facet combinations.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140882"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiNbN-coated CoCr alloy with enhanced ion release inhibition capacity for biomedical applications","authors":"Zhiquan Huang ,&nbsp;Yunlong Yu ,&nbsp;Fang Yuan ,&nbsp;Chunbo Tang ,&nbsp;Wubian Tian ,&nbsp;Jian Chen","doi":"10.1016/j.tsf.2026.140881","DOIUrl":"10.1016/j.tsf.2026.140881","url":null,"abstract":"<div><div>Cobalt-chromium (CoCr) alloys have been commonly used in orthopedic implants due to their exceptional mechanical properties and biocompatibility. While CoCr alloys continue to face significant challenges, including the release of Co and Cr ions due to corrosion and wear during prolonged service, as well as the harmful effects of wear debris on human tissue. TiNbN coating offers a promising approach to enhance the corrosion and wear resistance of CoCr alloys. However, the underlying mechanisms of TiNbN coating related to the ion release inhibition and the failure modes under wear conditions are lack of research. This study, therefore, aims to characterize the TiNbN coating deposited by magnetron sputtering and compare its composition, structure, and mechanical properties with TiN coating and CoCr substrate, focusing on their effects on corrosion resistance, wear performance, and biological properties. Furthermore, the mechanisms driving ion release during accelerated degradation and wear failure processes are systematically explored.</div><div>The results indicate that TiNbN coating exhibits significantly improved corrosion resistance, wear resistance, and ion release inhibition due to a denser microstructure and superior mechanical properties compared to TiN coating and CoCr substrate. Accelerated degradation tests of TiNbN coating reveal that corrosion products filling micropores and cracks within the coating effectively inhibit the release of Co and Cr ions. The wear failure mechanism of TiNbN coating gradually transits from initial abrasive wear to fatigue and adhesive wear, with oxidative wear throughout. Finally, <em>in vitro</em> cytotoxicity assessments suggest that TiNbN coating holds strong potential as biomaterials for orthopedic implant applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140881"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short-range order and optical properties of thin GeOx films obtained by thermal evaporation of GeO and GeO2","authors":"Ghaithaa Hamoud ,&nbsp;Alexey Samus ,&nbsp;Alexey Matsynin ,&nbsp;Sergey Komogortsev ,&nbsp;Vyacheslav Zhandun ,&nbsp;Igor Prosvirin ,&nbsp;Ksenia Astankova ,&nbsp;Ivan Azarov ,&nbsp;Pavel Geydt ,&nbsp;Ilya Milekhin ,&nbsp;Vladimir Volodin","doi":"10.1016/j.tsf.2026.140869","DOIUrl":"10.1016/j.tsf.2026.140869","url":null,"abstract":"<div><div>A simple method for producing GeO<em>_x</em> thin films by thermal evaporation of GeO<em>₂</em>, GeO and GeO<em>_x</em> targets is proposed. The method does not require high vacuum and electron (or ion) beams or plasma discharge for target evaporation. The atomic structure, optical properties and thicknesses of the obtained GeO<em>_x</em> films grown on silicon and glass substrates were studied using a set of methods: X-ray photoelectron spectroscopy, Raman scattering spectroscopy, infrared spectroscopy, transmission and reflection spectroscopies, and spectral ellipsometry. Optical bandgaps (absorption edges) were determined for films grown from different targets.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140869"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Poole-Frenkel conduction and critical charge-to-breakdown in plasma-enhanced chemical vapor deposition silicon-rich silicon nitride films","authors":"T. Al Moussi ,&nbsp;P. Lambkin ,&nbsp;R. Lakshmanan ,&nbsp;B. Chen ,&nbsp;S. Diaham","doi":"10.1016/j.tsf.2026.140886","DOIUrl":"10.1016/j.tsf.2026.140886","url":null,"abstract":"<div><div>This work addresses the limited understanding of how stoichiometry influences high-field conduction and breakdown-triggering mechanisms in Silicon-rich silicon nitride (SiNₓ) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), which is critical for their use as insulating barriers for galvanic isolation in microelectronic devices operating under high electric fields. Amorphous hydrogenated a-SiNₓ:H films with <em>x</em>=[N]/[Si] ratios ranging from 0.86 to 1.06 were deposited by PECVD and integrated into metal–insulator–metal (MIM) structures. Electrical characterization was performed using DC polarization–depolarization measurements and AC high-voltage broadband dielectric spectroscopy over a wide frequency range, allowing extraction of current density–electric field (<em>J</em>–<em>E</em>) characteristics under high-field conditions. The experimental results show that Poole–Frenkel (PF) emission governs field-assisted conduction in Silicon-rich SiNₓ films under both DC and AC stress. PF analysis enabled extraction of the zero-field trap barrier height (<span><math><msub><mi>ϕ</mi><mn>0</mn></msub></math></span>) ​and the theoretical dielectric permittivity (<span><math><msubsup><mrow><mi>ε</mi></mrow><mrow><mi>t</mi><mi>h</mi><mi>e</mi><mi>o</mi></mrow><mo>′</mo></msubsup></math></span>), which were compared to experimental permittivity values. The barrier height (<span><math><msub><mi>ϕ</mi><mn>0</mn></msub></math></span>) ​ was found to increase from approximately 0.8 to 1.5 eV with increasing nitrogen content, while (<span><math><msubsup><mrow><mi>ε</mi></mrow><mrow><mi>t</mi><mi>h</mi><mi>e</mi><mi>o</mi></mrow><mo>′</mo></msubsup></math></span>) exhibited a decreasing trend, consistent with experimental observations. Breakdown measurements revealed a strong dependence of the breakdown field (<em>E_BD</em>) ​ on composition, increasing with nitrogen incorporation. In contrast, the charge-to-breakdown (<em>Q_BD</em>) ​ remained within a narrow range across all compositions, indicating that dielectric failure is governed by a critical injected charge, highlighting a conduction-triggered breakdown process. These results provide design-relevant insights into the role of stoichiometry and frequency on trap-assisted conduction and breakdown behavior in Silicon-rich SiNₓ insulating layers, with direct implications for high-voltage microelectronic and galvanic isolation applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140886"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cellulose nanofiber composite copper thin film with high electrical conductivity using copper formate complex ink","authors":"Takahide Tanaka,&nbsp;Akihiro Yabuki","doi":"10.1016/j.tsf.2026.140877","DOIUrl":"10.1016/j.tsf.2026.140877","url":null,"abstract":"<div><div>Copper thin films incorporating cellulose nanofibers (CNF) were synthesized from an ink composed of copper formate, octylamine, and CNF to enhance electrical conductivity. Adding 0.5–1.5 wt% CNF significantly reduced the volume resistivity of the copper films to approximately 8 μΩ cm, which is approximately five times higher than that of bulk copper (1.7 μΩ cm). Scanning electron microscopy analysis revealed that adding CNF promoted the formation of larger copper particles and denser packing. The formation of larger particles was attributed to CNF enclosing some small copper particles and promoting their growth on enclosed particles during calcination. The denser packing resulted from the shrinkage of the CNF network during solvent evaporation, thereby increasing the effective contact area within the film and reducing the number of interfaces between copper particles that contribute to contact resistance. These findings indicate that CNF acts as a net that encloses copper particles, promoting their growth and densification during calcination, thereby improving film conductivity.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"836 ","pages":"Article 140877"},"PeriodicalIF":2.0,"publicationDate":"2026-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}