Thin Solid Films最新文献_第2页

Exploring thickness-dependent physical properties in Cs-doped ZnO thin films 探索cs掺杂ZnO薄膜的厚度相关物理性质

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-05 DOI: 10.1016/j.tsf.2025.140790

Hasan B. Albargi , Abanoub Awad , Ahmed El-Himily , Ahmed A. Aboud

{"title":"Exploring thickness-dependent physical properties in Cs-doped ZnO thin films","authors":"Hasan B. Albargi , Abanoub Awad , Ahmed El-Himily , Ahmed A. Aboud","doi":"10.1016/j.tsf.2025.140790","DOIUrl":"10.1016/j.tsf.2025.140790","url":null,"abstract":"<div><div>In this study, we investigate the influence of film thickness on the properties of cesium (Cs)-doped zinc oxide (ZnO) thin films fabricated via spray pyrolysis. By varying the thickness from 305 nanometers (nm) to 677 nm, we consistently formed a hexagonal ZnO phase across all samples. The crystallite size varied from 51 nm to 58.13 nm, indicating a nuanced relationship between thickness and structural properties. Field emission scanning electron microscopy (FE-SEM) revealed diverse grain size distributions, which are critical for optimizing film performance. From optical measurements, the band gap values were all around 3.26 ± 0.01 electronvolts (eV), while the refractive index decreased significantly from 2.3 to 1.7 with increasing thickness and fixed Cs nominal content at 5 wt percent (wt%). Employing the Spitzer-Fan model, we observed a consistent reduction in high-frequency dielectric constant (ε<sub>∞</sub>) from 3.3 to 2.89 as thickness increased, highlighting changes in electronic properties. Importantly, electrical conductivity (σ) exhibited a remarkable increase from 0.0053 ohm⁻¹ meter⁻¹ to 0.044 ohm⁻¹ meter⁻¹ with increasing thickness, suggesting enhanced charge transport properties crucial for optoelectronic applications. Correspondingly, activation energy (E<sub>a</sub>) was found to vary between 0.25 eV and 0.415 eV, indicating significant thermal sensitivity across the studied thickness range. Furthermore, ultraviolet (UV) performance under 365 nm illumination showed substantial variations in rise and decay times correlated with film thickness; minimum rise times were recorded at 5.08 s for the 305 nm film, while minimum decay times reached 68.86 s for the 400 nm film. These findings underscore the potential for tailoring ZnO thin films to optimize performance in optoelectronic applications, demonstrating a strong initial impact through quantifiable enhancements in material properties.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140790"},"PeriodicalIF":2.0,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145048503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Copper (Cu) dopant as the hole enhancer for chemical bath deposited n-type FeSxOy for solar cells applications 铜（Cu）掺杂剂作为化学浴沉积n型FeSxOy太阳能电池的空穴增强剂

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-04 DOI: 10.1016/j.tsf.2025.140788

Lee Zheng Yee , Nurul Afifah Zulkifli , Syafiqah Amira Zakiman , Aizuddin Supee

引用次数: 0

A transmission electron microscopy study of orientation relationships and interfacial reaction products in GdFe0.5Cr0.5O3 films grown on (001) SrTiO3 substrates by solution synthesis 溶液合成法在（001）SrTiO3衬底上生长GdFe0.5Cr0.5O3薄膜的取向关系和界面反应产物的透射电镜研究

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-04 DOI: 10.1016/j.tsf.2025.140789

S. Rommel , J. Pfund , M. Jain , M. Aindow

{"title":"A transmission electron microscopy study of orientation relationships and interfacial reaction products in GdFe0.5Cr0.5O3 films grown on (001) SrTiO3 substrates by solution synthesis","authors":"S. Rommel , J. Pfund , M. Jain , M. Aindow","doi":"10.1016/j.tsf.2025.140789","DOIUrl":"10.1016/j.tsf.2025.140789","url":null,"abstract":"<div><div>GdFe₀.₅Cr₀.₅O₃ (GFCO) is a single-phase magnetoelectric multiferroic at temperatures close to ambient. Epitaxial thin films of this orthorhombic perovskite would offer the possibility of tuning its electrical and magnetic properties through control of strain and interface effects. Here, 200 nm thick GFCO thin films have been grown on (001) SrTiO<sub>3</sub> substrates by solution synthesis and the microstructures have been investigated by cross-sectional transmission electron microscopy. The GFCO films are epitaxial but exhibit a mixture of three different orientation relationships in the form of domains ≈50 nm in diameter. Geometric analyses of the lattice matching show that the misfits for these domains would be tensile with magnitudes of less than 2 %. Pockets of a SrCrO<sub>4</sub> reaction product form at the film/substrate interface and do not exhibit any simple orientation with the adjacent phases. The product morphology indicates that the outward diffusion of Sr is more rapid than the inward diffusion of Cr, and this is related to the microstructures of the surrounding phases. These data show that epitaxial films of GFCO can be obtained via this route, but careful control of process parameters would be required to produce single-domain films, and alternate substrates or buffer layers would be needed to inhibit SrCrO<sub>4</sub> formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140789"},"PeriodicalIF":2.0,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase-engineered 1T/2H MoS2 via spray coating: role of precursor concentration in structural and electronic tuning 通过喷涂相工程的1T/2H MoS2：前驱体浓度在结构和电子调谐中的作用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140786

Thomas Vicart , Youssef Doubi , Bouchra Asbani , Nitul Rajput , Bouchaib Hartiti , Khalid Hoummada , Andrea Campos , Mimoun El Marssi , Michael Depriester , Mustapha Jouiad

{"title":"Phase-engineered 1T/2H MoS2 via spray coating: role of precursor concentration in structural and electronic tuning","authors":"Thomas Vicart , Youssef Doubi , Bouchra Asbani , Nitul Rajput , Bouchaib Hartiti , Khalid Hoummada , Andrea Campos , Mimoun El Marssi , Michael Depriester , Mustapha Jouiad","doi":"10.1016/j.tsf.2025.140786","DOIUrl":"10.1016/j.tsf.2025.140786","url":null,"abstract":"<div><div>Molybdenum disulfide (MoS₂) is particularly compelling due to its tunable electronic properties, which are intrinsically linked to its polymorphic phases. Controlling the synthesis of mixed-phase MoS<sub>2</sub>, comprising the metastable metallic 1T-MoS<sub>2</sub> phase and the semiconducting 2H-MoS<sub>2</sub>, is essential for tailoring its structural and electronic properties. Here, we demonstrate the fabrication of 1T/2H-MoS<sub>2</sub> mixed-phase structures via a spray coating method, emphasizing the impact of precursor concentration on phase composition and crystallinity. Comprehensive structural and spectroscopic analyses confirm the coexistence of both phases, revealing that increased precursor concentration promotes phase modulation. Optical properties investigations indicate a bandgap energy reduction from 1.48 to 1.19 eV as precursor concentration increases from 5 to 15 mmol·L⁻¹, underscoring the semiconducting nature of the mixed-phase. Electrical characterization further shows that the sample synthesized at 15 mmol·L⁻¹ exhibits the highest electrical conductivity of 2.23 × 10<sup>–</sup>² mS·cm<sup>–1</sup> and the lowest resistivity of 44.78 kΩ·cm, attributed to an increased fraction of the 1T-MoS<sub>2</sub> phase. These results provide a viable approach for engineering 1T/2H-MoS<sub>2</sub> mixed-phase with tunable structural and electronic properties.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140786"},"PeriodicalIF":2.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring oxygen pressure effects on phase transitions, ferroelectric properties, and ultrasonic transducer performance in (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 thin films by pulsed laser deposition 利用脉冲激光沉积技术研究氧压对（Ba0.85Ca0.15）（Ti0.9Zr0.1）O3薄膜相变、铁电性能和超声换能器性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140780

E. Benítez-Flores , A. Reyes-Montero , O. Depablos-Rivera , B. Carreño-Jiménez , M. Acuautla , R. Castañeda-Guzmán

{"title":"Exploring oxygen pressure effects on phase transitions, ferroelectric properties, and ultrasonic transducer performance in (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 thin films by pulsed laser deposition","authors":"E. Benítez-Flores , A. Reyes-Montero , O. Depablos-Rivera , B. Carreño-Jiménez , M. Acuautla , R. Castañeda-Guzmán","doi":"10.1016/j.tsf.2025.140780","DOIUrl":"10.1016/j.tsf.2025.140780","url":null,"abstract":"<div><div>This study investigates the effect of oxygen pressure (P<span><math><msub><mrow></mrow><mrow><msub><mrow><mi>O</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></msub></math></span>) during pulsed laser deposition on the structural, ferroelectric, and piezoelectric properties of <figure><img></figure> thin films. Films were deposited at P<span><math><msub><mrow></mrow><mrow><msub><mrow><mi>O</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></msub></math></span> levels of 8.6, 10, 11.5, and 12.7 Pa. The optimal ferroelectric properties were observed at 10 Pa, with a remnant polarization of 2.97 <span><math><mi>μ</mi></math></span>C/cm<sup>2</sup>, a coercive field of 33.80 kV/cm, and a saturation polarization of 11.88 <span><math><mi>μ</mi></math></span>C/cm<sup>2</sup>, closely matching the target composition. X-ray diffraction and Raman spectroscopy confirmed the presence of a morphotropic phase boundary (MPB) near room temperature. The MPB shifts toward lower temperatures with increasing P<span><math><msub><mrow></mrow><mrow><msub><mrow><mi>O</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></msub></math></span>, as characterized by the photoacoustic technique. Frequency measurements based on photoacoustic and piezoelectric effects demonstrated promising performance for piezoelectric micromachined ultrasonic transducers, with resonance frequencies ranging from 9.5 to 13 MHz.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140780"},"PeriodicalIF":2.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145010701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mg-doped ZrO2 thin film protection of AZ31 magnesium alloy against wet corrosion: A detailed study 掺镁ZrO2薄膜保护AZ31镁合金抗湿腐蚀的详细研究

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140787

Sundeep Kumar Marndi , Meera Antony , Jyotirmoy Roy , Gangineni Ramesh Babu , Amirthapandian Sankarakumar , Paramasivam Thangadurai

{"title":"Mg-doped ZrO2 thin film protection of AZ31 magnesium alloy against wet corrosion: A detailed study","authors":"Sundeep Kumar Marndi , Meera Antony , Jyotirmoy Roy , Gangineni Ramesh Babu , Amirthapandian Sankarakumar , Paramasivam Thangadurai","doi":"10.1016/j.tsf.2025.140787","DOIUrl":"10.1016/j.tsf.2025.140787","url":null,"abstract":"<div><div>Magnesium-based alloys possess attractive properties that minimize the weight of the device and improve its performance efficiency. However, their poor corrosion resistance capabilities compromise their use in many applications. One way to protect against corrosion is to apply a thin film coating on the surface. In this work, pure, 3%, 5%, 8%, and 10% Mg ion-doped zirconia (ZrO<sub>2</sub>) thin film coatings are fabricated on AZ31 Mg alloy using the electron-beam physical vapor deposition method to protect its surface from corrosion. The Mg ion doping has stabilized a tetragonal phase of ZrO<sub>2</sub> films, compared to the monoclinic phase in the undoped film. The stabilized tetragonal phase has improved the physical properties of the films compared to the undoped film with monoclinic phase. Corrosion studies conducted using potentiodynamic polarization and impedance spectroscopy showed improved corrosion inhibition characteristics of the Mg:ZrO<sub>2</sub> film in 3.5 wt.% NaCl electrolyte solution. The corrosion rate is reduced from 0.54 mmpy to 0.05 mmpy when coated with 5% Mg doped ZrO<sub>2</sub> film. The corrosion current and potential are obtained to be 2.38 µA/cm<sup>2</sup> and -1.46 V, respectively. The charge transfer resistance is high and stable in the coated samples compared to the bare substrates, where the resistance dropped heavily after the corrosion. Post-corrosion analysis using scanning electron microscopy, impedance spectroscopy, and X-ray photoelectron spectroscopy, including a quantitative analysis to discern the corrosion mechanism in the Mg:ZrO<sub>2</sub>/AZ31 heterostructure, including the presence of Na and Cl from the electrolyte. Surface features and doping quantities have greatly influenced the corrosion inhibition capabilities of the AZ31 Mg alloys.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140787"},"PeriodicalIF":2.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145020150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimized corrosion resistance and electrical conductivity of Nb:Ti:N-coated 316L stainless steel under fluctuating potentials for proton exchange membrane water electrolysis 质子交换膜电解波动电位下Nb:Ti: n涂层316L不锈钢的耐蚀性和电导率优化

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-08-30 DOI: 10.1016/j.tsf.2025.140785

Luqi Chang , Xiejing Luo , Yingyu Ding , Jiuhong Zhang , Jizheng Yao , Zhanfeng Deng , Chaofang Dong

{"title":"Optimized corrosion resistance and electrical conductivity of Nb:Ti:N-coated 316L stainless steel under fluctuating potentials for proton exchange membrane water electrolysis","authors":"Luqi Chang , Xiejing Luo , Yingyu Ding , Jiuhong Zhang , Jizheng Yao , Zhanfeng Deng , Chaofang Dong","doi":"10.1016/j.tsf.2025.140785","DOIUrl":"10.1016/j.tsf.2025.140785","url":null,"abstract":"<div><div>Proton exchange membrane water electrolysis (PEMWE) demonstrates adaptability to power fluctuations, enabling integration with renewable energy sources like photovoltaic and wind power. To improve the corrosion resistance and electrical conductivity of 316L stainless steel (316L SS) in high acidity and fluctuating potential environments, it has been modified with Nb:Ti:N coatings prepared by multi-arc ion plating. The Nb:Ti:N coating with initial interfacial contact resistance (ICR) of 4.86 mΩ·cm², consisting of conductive TiN, Nb₂N, NbN, and Ti phases, has increased the stable potential of 316L SS to 1.8 V<sub>Ag/AgCl</sub>. After 4 h of polarization test, the ICR reached a maximum value of 7.93 mΩ·cm², satisfying the United States department of energy target (<10 mΩ·cm²). Square/triangular wave potentials between 1.2 and 1.8 V<sub>Ag/AgCl</sub> have been applied to simulate fluctuating energy inputs. The results indicate that the Nb:Ti:N coating responds rapidly to potential fluctuations, particularly under triangular waveforms, without severe failure phenomenon. Thus, the Nb:Ti:N coating offers a viable reference for designing bipolar plates resistant to fluctuating potentials.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140785"},"PeriodicalIF":2.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144989308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thin film Indium Tin oxide transparent conductors: Comparing the effects of deposition temperature and annealing 薄膜氧化铟锡透明导体：比较沉积温度和退火的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-08-30 DOI: 10.1016/j.tsf.2025.140784

Luis C. Infante-Ortega , Xiaolei Liu, Kieran M. Curson, Luksa Kujovic, Mustafa Togay, Adam M. Law, Ali Abbas, Patrick J.M. Isherwood, Jake W. Bowers, John M. Walls

{"title":"Thin film Indium Tin oxide transparent conductors: Comparing the effects of deposition temperature and annealing","authors":"Luis C. Infante-Ortega , Xiaolei Liu, Kieran M. Curson, Luksa Kujovic, Mustafa Togay, Adam M. Law, Ali Abbas, Patrick J.M. Isherwood, Jake W. Bowers, John M. Walls","doi":"10.1016/j.tsf.2025.140784","DOIUrl":"10.1016/j.tsf.2025.140784","url":null,"abstract":"<div><div>Indium Tin-Oxide (ITO) transparent conducting films were prepared by RF magnetron sputtering on glass substrates. The effects of two different heat treatments – annealing and heating the substrate, both at 300 °C and 500 °C – were examined to determine how they affect the microstructure, optical and electrical properties of the films. Despite extensive work on both heat treatment methods in literature, the two have not been compared in a side-by-side study thus far, and this work aims to address this. Heating the substrate during deposition produced lower resistivity films with higher carrier concentrations and higher transmission over visible wavelengths. Microstructural analysis revealed that both heat treatments produced crystalline ITO films, but the preferred crystal orientations were different. Annealing resulted in a preferred cubic (222) orientation, and high substrate temperatures yielded a mixed phase crystal structure (cubic and rhombohedral) with a preferred cubic (211) orientation. Scanning Transmission Electron Microscopy (STEM) analysis showed that sputtering at room temperature with no added heat produced films with a mostly amorphous structure which were converted into equiaxed grains by annealing. High substrate temperatures resulted in a columnar grain structure. These results have useful implications for the deposition of ITO films for various opto-electronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140784"},"PeriodicalIF":2.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145004686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of dendrimer underlayers on microstructure, morphology, optical, and electrical properties of direct current sputtered indium tin oxide thin film 枝状聚合物衬底对直流溅射氧化铟锡薄膜微观结构、形貌、光学和电学性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-08-29 DOI: 10.1016/j.tsf.2025.140781

Firdos Ali , Rajesh Chandra , Dirk Bottesch , Subhadra Gupta

{"title":"Effect of dendrimer underlayers on microstructure, morphology, optical, and electrical properties of direct current sputtered indium tin oxide thin film","authors":"Firdos Ali , Rajesh Chandra , Dirk Bottesch , Subhadra Gupta","doi":"10.1016/j.tsf.2025.140781","DOIUrl":"10.1016/j.tsf.2025.140781","url":null,"abstract":"<div><div>Minimization of surface roughness is extremely important for sputtered indium-tin oxide (ITO) films used for electrodes in solar cells, organic light-emitting diodes (OLED), and other device applications. One of the techniques used to achieve smooth ITO films is the optimization of process parameters, together with the injection of cesium vapor into the plasma. We have investigated an alternative, more straightforward approach, the application of dendrimer monolayers by dip- or spin-coating techniques before ITO sputter deposition at ambient temperatures. The ITO films have been characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and their microstructure and morphology have been correlated with optical and electronic properties, including transmission and resistivity. The presence of the dendrimer underlayer appears to mediate the film's roughness by reducing grain size and improving adhesion. The most significant effect is seen in films sputtered at low powers. This is expected, as a high level of ion bombardment is likely to damage or destroy the dendrimer underlayer. The observed improvement is most encouraging for electrodes in solar cells and flexible display applications, where low resistivity and low surface roughness are required at low deposition power at room temperature.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140781"},"PeriodicalIF":2.0,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144919997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxidation and atomic migration between CuOy and SnOx layers magnetron sputtered on polyethylene terephthalate 聚对苯二甲酸乙二醇酯磁控溅射CuOy和SnOx层之间的氧化和原子迁移

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-08-29 DOI: 10.1016/j.tsf.2025.140782

Adriana Ventolero , Ma. Guadalupe Olayo , Elena Colín , J. Cuauhtémoc Palacios , Fernando G. Flores , Rosario Ramírez , Guillermo J. Cruz

{"title":"Oxidation and atomic migration between CuOy and SnOx layers magnetron sputtered on polyethylene terephthalate","authors":"Adriana Ventolero , Ma. Guadalupe Olayo , Elena Colín , J. Cuauhtémoc Palacios , Fernando G. Flores , Rosario Ramírez , Guillermo J. Cruz","doi":"10.1016/j.tsf.2025.140782","DOIUrl":"10.1016/j.tsf.2025.140782","url":null,"abstract":"<div><div>Alternated bilayers of tin (SnO<em><sub>x</sub></em>) and copper (CuO<em><sub>y</sub></em>) oxides were synthesized by reactive magnetron sputtering on polyethylene terephthalate (PET) to study the atomic interlayer migration and oxidation states. The total thickness of the bilayers was between 468 and 482 nm. The thickness of sublayers and interfaces were calculated by continuous erosion with Ar ions, finding 86 nm in PET-CuO<em><sub>y</sub></em>, 34 nm in SnO<em><sub>x</sub></em>-CuO<em><sub>y</sub></em> and 57 nm in CuO<em><sub>y</sub></em>-SnO<em><sub>x</sub></em>. It was found Cu atomic interlayer migration to its neighbors but not Sn migration. The metallic chemical states were studied by means of the energetic distribution of Cu2p3/2, Sn3d5/2 and O1s orbitals. In the SnO<em><sub>x</sub></em>-CuO<em><sub>y</sub></em> bilayer, CuO<em><sub>y</sub></em> oxides formed during the sputtering showed 5 chemical states with <em>y</em> = 0 (56.5 %), 0.6 (19.0 %), 1.2 (10.1 %), 1.9 (5.8 %) and 2.6 (2.0 %); and when it diffused into the SnO<em><sub>x</sub></em> layer, 4 chemical states were formed with <em>y</em> = 0.3 (53.9 %), 1.0 (18.6 %), 1.7 (8.2 %) and 2.4 (only at 0 s of erosion with 7.8 %). These numbers suggest different oxidation in Cu when it is formed directly from the sputtering in an oxygen atmosphere and when it diffuses among the metallic layers. In SnO<em><sub>x</sub></em>, 3 Sn chemical states were found with <em>x</em> = 0.4 (3.8 %), 1.8 (93.5 %) and 3.3 (2.7 %) without migration to the Cu layer. From a global point of view, O/Cu and O/Sn atomic ratios showed different values from those relative to their respective chemical valences.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140782"},"PeriodicalIF":2.0,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144932435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0