Thin Solid Films最新文献

{"title":"A multilayered black Ni-P solar absorbent material with double physical vapor deposited Ag and Al selective nanocoatings","authors":"Víctor Octavio Martínez Hernández ,&nbsp;Adrián Sosa Domínguez ,&nbsp;José de Jesús Pérez Bueno ,&nbsp;José Santos Cruz ,&nbsp;Francisco Javier de Moure Flores","doi":"10.1016/j.tsf.2025.140614","DOIUrl":"10.1016/j.tsf.2025.140614","url":null,"abstract":"<div><div>This study presents a single proposed sample type designed to combine high solar absorption efficiency and enhanced corrosion resistance, a multilayer solar absorber material comprising a black nickel-phosphorus base layer, for absorption in the visible to short-wavelength infrared. It was covered with nanometric Ag (∼7 nm) and Al (∼5 nm) thin films proposed as complementary selective layers to reflect in the mid- and long-wavelength infrared to avoid losing energy in hot surfaces by radiation. This multilayer optimizes solar absorption but also possesses corrosion resistance with the Al₂O₃ self-passivating layer of Al, albeit with limitations due to heterogeneity and the topography of the underlying black Ni-P layer. The Al layer reduced the corrosion rate from 0.28 for steel to 0.19 mmpy for the full multilayer system, despite introducing microgalvanic interactions in chloride-rich environments that increased localized corrosion signals. The multilayer absorption system achieved total absorptions of about 91 % for steel/Ni-P/Ag and about 93 % for steel/Ni-P/Ag/Al/Al₂O₃ in the visible/near-wavelength/short-wavelength infrared, with an overall absorption of up to 99 %. This work highlights the required balance between optical performance and electrochemical stability attained with multilayer systems, making them a promising solution for sustainable solar energy applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140614"},"PeriodicalIF":2.0,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition","authors":"Hassan Melhem ,&nbsp;Geraldine Hallais ,&nbsp;Gaelle Amiri ,&nbsp;Gilles Patriarche ,&nbsp;Nathaniel Findling ,&nbsp;Theo Van den Berg ,&nbsp;Hafssa Ameziane ,&nbsp;Charles Renard ,&nbsp;Vincent Sallet ,&nbsp;Laetitia Vincent","doi":"10.1016/j.tsf.2025.140609","DOIUrl":"10.1016/j.tsf.2025.140609","url":null,"abstract":"<div><div>In many semiconductors, metastable polytype phases are attractive to tune physical properties. Owing to a non-centrosymmetric structure, ZnS with a wurtzite (WZ) phase would exhibit additional piezoelectric properties, optical non-linearity as well as Rashba effect. Because bulk single crystalline ZnS-WZ is not commercially available in useful sizes and attractive prices, large area thin films with controlled crystalline phase are required. We report the synthesis of ZnS films deposited on m-plane CdS substrates as a proof of concept of the replication of the WZ stacking on non-polar surfaces. First, a chemical mechanical polishing is required for the substrate preparation. ZnS layers are subsequently grown using metal organic chemical vapor deposition. The results show a strong impact of the growth temperature on the CdS substrate surface that is highly detrimental on the crystalline quality of the layer. However, the m-plane ZnS layers grown at 360 °C have WZ structure with a perfect epitaxial orientation relationship with the CdS-WZ substrate. The hexagonality in ZnS-WZ is about 90 %. Strain relaxation occurs through the formation of misfit dislocations at the interface forming basal and prismatic stacking faults on {11–20} planes. Additional pyramidal planar defects are evidenced. With the optimisation of a buffer layer or a more suitable substrate, this ZnS-WZ layers may find various applications not limited to optics such as piezoelectricity or spintronics. Additionally, they may be used as a platform for the growth of other materials with the envisioned WZ structure.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140609"},"PeriodicalIF":2.0,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion beam assisted deposition of a thin film metallic glass","authors":"Vrishank Jambur,&nbsp;Zijian Wang,&nbsp;John Sunderland,&nbsp;Soohyun Im,&nbsp;Xuanxin Hu,&nbsp;Sakiru Akinyemi,&nbsp;John H. Perepezko,&nbsp;Paul M. Voyles,&nbsp;Izabela Szlufarska","doi":"10.1016/j.tsf.2025.140612","DOIUrl":"10.1016/j.tsf.2025.140612","url":null,"abstract":"<div><div>We have used ion beam assisted deposition to modify the properties of a thin film Pd_77.5Cu₆Si_16.5 metallic glass without altering the composition. By irradiating the film surface during deposition, the mobility of surface atoms is enhanced, leading to the development of atomically smooth films with increased hardness and kinetic stability. Further, increasing the ion beam energy changes the crystallization pathways in the metallic glass films, pointing to changes in as-deposited structure. This approach to tune the properties of metallic glass films may unlock access to previously unobserved structural states.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140612"},"PeriodicalIF":2.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processable graphene derivative as an alternative carbon-based electrode","authors":"Alvaro Guerra-Him ,&nbsp;Julio C. Carrillo-Sendejas ,&nbsp;José-Luis Maldonado ,&nbsp;Yaily Fernández-Arteaga ,&nbsp;Maiby Valle-Orta ,&nbsp;Uriel Sierra ,&nbsp;Salvador Fernández","doi":"10.1016/j.tsf.2025.140610","DOIUrl":"10.1016/j.tsf.2025.140610","url":null,"abstract":"<div><div>A processable graphene derivative (PGD) is presented for potential application in organic solar cells (OSCs). PGD was mechanically synthesized, suspended in water and used as an alternative anode in two configurations: 1) Three-layer graphene anode (TLGA): PGD/PH1000/PH1000, where PH1000 is a conductive polymer; PGD was deposited by drop-casting and treated with hydriodic acid, to recover its electrical properties, and with UV-ozone plasma, to improve the adhesion of the next layer (PH1000); it achieved a transmittance (T) (at 550 nm) ∼ 74 % and a resistance (R) ∼ 170 Ω/sq. 2) Hybrid multilayer graphene anode (HMGA): PH1000:PGD (4:1 v/v), 6 layers were deposited by spin-coating and treated with hydriodic acid; this electrode showed T (at 550 nm) ∼ 79 % and R ∼ 134 Ω/sq. As a concept test, alternative anodes TLGA and HMGA were implemented in PM6:Y7-based OSCs to confirm the application of PGD. For the alternative cathode, Field's metal, a eutectic alloy composed of Sn, Bi and In, vacuum free deposited, was used; the achieved efficiencies were of ∼ 8.7 % for the control OSCs, ∼ 4.0 % for TLGA and ∼ 1.4 % for HMGA.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140610"},"PeriodicalIF":2.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure evolution of forsterite film during the high-temperature annealing process in grain-oriented silicon steel","authors":"Chengfu Han ,&nbsp;Xianhui Wang ,&nbsp;Ruifeng Li ,&nbsp;Songshan Zhao ,&nbsp;Jianhui Tian ,&nbsp;Zhenyu Du ,&nbsp;Fushan Li","doi":"10.1016/j.tsf.2025.140607","DOIUrl":"10.1016/j.tsf.2025.140607","url":null,"abstract":"<div><div>Forsterite films play an important role in enhancing the adhesion of the insulation layer and the magnetic properties of grain-oriented silicon steel. To clarify the microstructure evolution of forsterite film, an experiment involving high-temperature annealing at different temperatures ranging from 850 °C to 1150 °C was performed. Additionally, the reaction processes between MgO and the oxides formed in the decarburization oxide layer, such as SiO₂ and Fe₂SiO₄, were investigated. The initial formation temperature of the forsterite film is found to be within the range of 900 °C – 950 °C. The composition analysis reveals a decrease in the magnesium content from the surface toward the interior of the oxide layer. Up to 1100 °C, there is no longer a transition region between MgO and Fe₂SiO₄ in the uppermost oxide layer, showing that the surface of oxide layer is composed entirely of forsterite. Simultaneously, with the diffusion of Mg²⁺, SiO₂ in the subsurface region reacts with Mg²⁺ and is thus transformed into forsterite. The enrichment of aluminum, silicon, and oxygen in the bottom part of the oxide layer at 1100 °C implies the potential formation of mullite. These findings provide valuable insights to tune and control the forsterite film in grain-oriented silicon steel.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140607"},"PeriodicalIF":2.0,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring","authors":"Hirosuke Sonomura ,&nbsp;Ryota Nonami ,&nbsp;Gentoku Yoshida ,&nbsp;Keigo Nakano ,&nbsp;Kazuaki Katagiri ,&nbsp;Tomoatsu Ozaki","doi":"10.1016/j.tsf.2024.140599","DOIUrl":"10.1016/j.tsf.2024.140599","url":null,"abstract":"<div><div>The conditions for Cu film formation by friction stirring on Al₂O₃ and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140599"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The orientation relationships of Ag3Al/Ag interfaces and formation sequence of Ag2Al and Ag3Al at the Ag/Al interface","authors":"Kuang-Kuo Wang,&nbsp;Dershin Gan","doi":"10.1016/j.tsf.2024.140598","DOIUrl":"10.1016/j.tsf.2024.140598","url":null,"abstract":"<div><div>The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag₃Al and Ag, as well as formation sequence of gamma (γ)-Ag₂Al and μ-Ag₃Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag₃Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)_Ag thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag₃Al. Results showed that the γ-Ag₂Al first formed at Ag/Al interface and then the μ-Ag₃Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]_μ//[001]_Ag (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span>_μ//(110)_Ag, and <span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span>_μ//<span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span>_Ag at γ-Ag₂Al/Ag interface and (2) [0001]_γ//[221]_μ (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>100</mn></mrow><mo>)</mo></mrow></math></span>_γ//<span><math><mrow><mo>(</mo><mrow><mn>1</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow></math></span>_μ, and <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mover><mn>1</mn><mo>¯</mo></mover><mn>20</mn></mrow><mo>)</mo></mrow></math></span>_γ//<span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span>_μ at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.</div><div>That γ-Ag₂Al forms before μ-Ag₃Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag₂Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag₃Al/Ag. In addition, the energy of formation of γ-Ag₂Al is slightly larger than that of μ-Ag₃Al. Therefore γ-Ag₂Al forms before μ-Ag₃Al.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140598"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Zinc oxide nanorods and nanotubes arrays grown on carbon fabric by microwave hydrothermal method for self-powered piezoelectric/triboelectric sensors","authors":"S.I. Petrushenko ,&nbsp;K. Adach ,&nbsp;M. Fijalkowski ,&nbsp;V.R. Kopach ,&nbsp;Y.M. Shepotko ,&nbsp;S.V. Dukarov ,&nbsp;R.V. Sukhov ,&nbsp;A. Fedonenko ,&nbsp;A.L. Khrypunova ,&nbsp;N.P. Klochko","doi":"10.1016/j.tsf.2025.140601","DOIUrl":"10.1016/j.tsf.2025.140601","url":null,"abstract":"<div><div>The development of efficient piezoelectric/triboelectric textile materials for highly sensitive wearable autonomous pressure, shock and vibration sensors holds promise for use in health monitoring, motion detection, human-machine interaction, and active touch matrices for electronic skin of soft robots. In this work, arrays of zinc oxide nanorods (ZnONR) and nanotubes (ZnONT) oriented vertically on the surface of carbon fabric (CF) were grown from aqueous solutions with concentrations of zinc nitrate and hexamethylenetetramine (HMTA) in the range of 50–100 mM using a seed-mediated microwave hydrothermal method. The results of tests of experimental samples of pressure and impact sensors based on various compositions of double-electrode and single-electrode piezoelectric/triboelectric nanogenerators (PTENGs) of contact-separation mode with textile parts of CF/ZnONR and CF/ZnONT confirmed the coupling of piezoelectric and triboelectric effects. The tests have shown that the efficiency of all developed PTENGs increases with increasing contact area of nanostructured zinc oxide arrays, and therefore ZnO nanorods have proven to be more promising for use in all types of PTENGs. The best responses were recorded for pressure, impact and vibration sensors based on PTENG with a piezoelectric/triboelectric textile part CF/ZnONR obtained by the microwave hydrothermal method in the solution of 100 mM Zn(NO₃)₂ and 100 mM HMTA. Comparison of their sensitivity with the sensitivity data of wearable triboelectric pressure and strain sensors, as well as hybrid piezotriboelectric and triboelectric flexible vibration sensors, showed that the sensitivity data obtained in this work is on the same level or superior to the best state-of-the-art.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140601"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Relevance of linear and nonlinear optical properties of Erythrosine B thin films for photonic application","authors":"E.F.M. El-Zaidia ,&nbsp;A.A.A. Darwish ,&nbsp;Saleem I. Qashou ,&nbsp;H.A.M. Ali","doi":"10.1016/j.tsf.2025.140602","DOIUrl":"10.1016/j.tsf.2025.140602","url":null,"abstract":"<div><div>This study investigates the structural and optical properties of Erythrosine B thin films. The films were fabricated through thermal evaporation and annealed at 423, 473, and 523 K. X-ray diffraction revealed that the films were initially amorphous, but their amorphous nature decreased with annealing. Optical transmittance and reflectance were measured across a wavelength range of 190– 2500 nm. After annealing, the transmittance dropped from 75% (as-deposited) to 40% at around 520 nm. The optical band gap also narrowed, reducing from 1.67 to 1.40 eV at 523 K. The refractive index showed anomalous dispersion below 900 nm and normal dispersion above, with <em>ε</em>_∞ values increasing from 2.14 to 2.74 as the annealing temperature rose. Additionally, the third-order nonlinear optical susceptibility decreased with annealing, with higher values observed in the as-deposited films. These results suggest that Erythrosine B thin films have the potential for photonic and optoelectronic applications due to their adjustable optical properties and thermal stability.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140602"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Caffeine-driven n-type doping in multilayer MoS2 field effect transistor","authors":"Muhammad Shamim Al Mamun ,&nbsp;Tsuyoshi Takaoka ,&nbsp;Tadahiro Komeda","doi":"10.1016/j.tsf.2024.140591","DOIUrl":"10.1016/j.tsf.2024.140591","url":null,"abstract":"<div><div>It has been reported that the electrical characteristics of molybdenum disulfide field effect transistors can be customized through the chemical integration of mechanically exfoliated multilayer MoS₂ by caffeine. The device was completely submerged in the caffeine solution for 15 s, dried with a N₂ cannon, and its electrical characteristics were assessed. Caffeine causes n-doping in the multilayer MoS₂, as confirmed by transfer characteristics, Raman spectroscopic analysis and X-ray Photoelectron Spectroscopy. After the doping procedure, the threshold voltage moved to the left, and the electrical property increased at room temperature outside without causing any damage to the device. The Raman spectrum's downward trend in peak shifting of the <em>E</em>₂ _g and <em>A</em>₁ _g peaks following the functionalization of caffeine molecules shows an increase in electron concentration on the MoS₂ surface. In comparison to the pristine device, the extracted field effect mobility increased by a factor of 5.5. Compared to the pristine device (4.6 V/decade), the subthreshold swing was decreased to 1.6 V/decade. After doping, the device was annealed for 15 min at 90 °C, which brought it very near to being immaculate. Additionally, the n-type doping by caffeine was shown by X-ray Photoelectron Spectroscopy analysis. The MoS₂ surface exhibited caffeine adsorption, as demonstrated by the Time-of-Flight Secondary Ionization Mass Spectrometry measurement.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140591"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}