铜（Cu）掺杂剂作为化学浴沉积n型FeSxOy太阳能电池的空穴增强剂

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-09-04 DOI:10.1016/j.tsf.2025.140788

Lee Zheng Yee , Nurul Afifah Zulkifli , Syafiqah Amira Zakiman , Aizuddin Supee

{"title":"铜（Cu）掺杂剂作为化学浴沉积n型FeSxOy太阳能电池的空穴增强剂","authors":"Lee Zheng Yee , Nurul Afifah Zulkifli , Syafiqah Amira Zakiman , Aizuddin Supee","doi":"10.1016/j.tsf.2025.140788","DOIUrl":null,"url":null,"abstract":"<div><div>We performed a chemical bath deposition (CBD) to deposit copper (Cu)-doped iron-sulfide-oxide (FeS<sub>x</sub>O<sub>y</sub>). Higher copper concentration reduced transmittance, the direct bandgap, and oxygen content, while increasing the formation of flower-like agglomerations on the surface. Cu acted as a hole enhancer, lowering the oxygen character in the n-type (electron-dominant) FeS<sub>x</sub>O<sub>y</sub>, thereby obtaining p-type (hole-dominant) behavior when the Cu concentration was ≥ 2.4 mM. In this work, we systematically observed the effect on the physicochemical properties and photovoltaic properties by changing the concentration (0–7.2 mM) of Cu in the bath solution. P-type Cu-doped FeS<sub>x</sub>O<sub>y</sub>/n-type FeS<sub>x</sub>O<sub>y</sub> heterojunctions exhibited rectification properties in a current density-voltage (J-V) measurement.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"827 ","pages":"Article 140788"},"PeriodicalIF":2.0000,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Copper (Cu) dopant as the hole enhancer for chemical bath deposited n-type FeSxOy for solar cells applications\",\"authors\":\"Lee Zheng Yee , Nurul Afifah Zulkifli , Syafiqah Amira Zakiman , Aizuddin Supee\",\"doi\":\"10.1016/j.tsf.2025.140788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We performed a chemical bath deposition (CBD) to deposit copper (Cu)-doped iron-sulfide-oxide (FeS<sub>x</sub>O<sub>y</sub>). Higher copper concentration reduced transmittance, the direct bandgap, and oxygen content, while increasing the formation of flower-like agglomerations on the surface. Cu acted as a hole enhancer, lowering the oxygen character in the n-type (electron-dominant) FeS<sub>x</sub>O<sub>y</sub>, thereby obtaining p-type (hole-dominant) behavior when the Cu concentration was ≥ 2.4 mM. In this work, we systematically observed the effect on the physicochemical properties and photovoltaic properties by changing the concentration (0–7.2 mM) of Cu in the bath solution. P-type Cu-doped FeS<sub>x</sub>O<sub>y</sub>/n-type FeS<sub>x</sub>O<sub>y</sub> heterojunctions exhibited rectification properties in a current density-voltage (J-V) measurement.</div></div>\",\"PeriodicalId\":23182,\"journal\":{\"name\":\"Thin Solid Films\",\"volume\":\"827 \",\"pages\":\"Article 140788\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Solid Films\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0040609025001877\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025001877","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

摘要

我们采用化学浴沉积（CBD）沉积掺杂铜的硫化铁氧化物（FeSxOy）。较高的铜浓度降低了透光率、直接带隙和氧含量，同时增加了表面花状团块的形成。当Cu浓度≥2.4 mM时，Cu作为空穴增强剂，降低了n型（电子为主）FeSxOy的氧性质，从而获得p型（空穴为主）行为。本文系统地观察了改变镀液中Cu浓度（0-7.2 mM）对FeSxOy理化性质和光伏性质的影响。在电流密度电压（J-V）测量中，p型掺铜FeSxOy/n型FeSxOy异质结表现出整流特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Copper (Cu) dopant as the hole enhancer for chemical bath deposited n-type FeSxOy for solar cells applications

We performed a chemical bath deposition (CBD) to deposit copper (Cu)-doped iron-sulfide-oxide (FeS_xO_y). Higher copper concentration reduced transmittance, the direct bandgap, and oxygen content, while increasing the formation of flower-like agglomerations on the surface. Cu acted as a hole enhancer, lowering the oxygen character in the n-type (electron-dominant) FeS_xO_y, thereby obtaining p-type (hole-dominant) behavior when the Cu concentration was ≥ 2.4 mM. In this work, we systematically observed the effect on the physicochemical properties and photovoltaic properties by changing the concentration (0–7.2 mM) of Cu in the bath solution. P-type Cu-doped FeS_xO_y/n-type FeS_xO_y heterojunctions exhibited rectification properties in a current density-voltage (J-V) measurement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.