{"title":"非化学计量学对18O同位素掺杂氧化钒薄膜结构和电子金属-绝缘体转变的影响","authors":"Oksana Romanova , Sergey Aplesnin , Yulia Pyastolova , Natalya Cheremnykh , Maxim Sitnikov , Petr Shvets , Ksenia Maksimova , Alexander Goikhman , Lubov Udod","doi":"10.1016/j.tsf.2025.140746","DOIUrl":null,"url":null,"abstract":"<div><div>The synthesis of vanadium oxide compounds, V<sub>2</sub><sup>18</sup>O<sub>3-x</sub>, with oxygen non-stoichiometry and heavy oxygen isotope doping (<sup>18</sup>O), was achieved via the cathode arc sputtering method. The microstructural characteristics and stoichiometric properties of the resulting nanocrystalline films were examined using X-ray diffraction, atomic force microscopy and Rutherford backscatter spectrometry. The concentration of defects leading to the suppression of the structural and electronic metal-insulator transition was evaluated through Raman spectroscopy and the analysis of electrophysical properties. A semi-empirical simulation of the lattice dynamics of vanadium oxide was also performed. Notable temperature anomalies in resistance, impedance, and relaxation time were observed. A model involving the deformation of octahedra and the splitting of oxygen vacancies multiplets was proposed to explain the formation of impurity subbands. Furthermore, a change in the sign of magnetoresistance and magnetoimpedance at specific temperatures, along with the effect of photoconductivity, was discovered.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140746"},"PeriodicalIF":2.0000,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of non-stoichiometry on the structural and electronic metal-insulator transition in 18O isotope-doped vanadium oxide films\",\"authors\":\"Oksana Romanova , Sergey Aplesnin , Yulia Pyastolova , Natalya Cheremnykh , Maxim Sitnikov , Petr Shvets , Ksenia Maksimova , Alexander Goikhman , Lubov Udod\",\"doi\":\"10.1016/j.tsf.2025.140746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The synthesis of vanadium oxide compounds, V<sub>2</sub><sup>18</sup>O<sub>3-x</sub>, with oxygen non-stoichiometry and heavy oxygen isotope doping (<sup>18</sup>O), was achieved via the cathode arc sputtering method. The microstructural characteristics and stoichiometric properties of the resulting nanocrystalline films were examined using X-ray diffraction, atomic force microscopy and Rutherford backscatter spectrometry. The concentration of defects leading to the suppression of the structural and electronic metal-insulator transition was evaluated through Raman spectroscopy and the analysis of electrophysical properties. A semi-empirical simulation of the lattice dynamics of vanadium oxide was also performed. Notable temperature anomalies in resistance, impedance, and relaxation time were observed. A model involving the deformation of octahedra and the splitting of oxygen vacancies multiplets was proposed to explain the formation of impurity subbands. Furthermore, a change in the sign of magnetoresistance and magnetoimpedance at specific temperatures, along with the effect of photoconductivity, was discovered.</div></div>\",\"PeriodicalId\":23182,\"journal\":{\"name\":\"Thin Solid Films\",\"volume\":\"825 \",\"pages\":\"Article 140746\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Solid Films\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0040609025001464\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025001464","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Influence of non-stoichiometry on the structural and electronic metal-insulator transition in 18O isotope-doped vanadium oxide films
The synthesis of vanadium oxide compounds, V218O3-x, with oxygen non-stoichiometry and heavy oxygen isotope doping (18O), was achieved via the cathode arc sputtering method. The microstructural characteristics and stoichiometric properties of the resulting nanocrystalline films were examined using X-ray diffraction, atomic force microscopy and Rutherford backscatter spectrometry. The concentration of defects leading to the suppression of the structural and electronic metal-insulator transition was evaluated through Raman spectroscopy and the analysis of electrophysical properties. A semi-empirical simulation of the lattice dynamics of vanadium oxide was also performed. Notable temperature anomalies in resistance, impedance, and relaxation time were observed. A model involving the deformation of octahedra and the splitting of oxygen vacancies multiplets was proposed to explain the formation of impurity subbands. Furthermore, a change in the sign of magnetoresistance and magnetoimpedance at specific temperatures, along with the effect of photoconductivity, was discovered.
期刊介绍:
Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.