Thin Solid Films最新文献_第9页

Electroless Cu plating on glass substrates via repeated Sn-sensitization and Pd-activation cycles without adhesion promoter layers 在无粘结促进剂层的情况下，通过重复的锡敏化和钯活化循环在玻璃衬底上化学镀铜

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-18 DOI: 10.1016/j.tsf.2025.140825

Keisuke Nakao , Sho Nagai , Yasuo Hayashi , Futoshi Matsumoto

{"title":"Electroless Cu plating on glass substrates via repeated Sn-sensitization and Pd-activation cycles without adhesion promoter layers","authors":"Keisuke Nakao , Sho Nagai , Yasuo Hayashi , Futoshi Matsumoto","doi":"10.1016/j.tsf.2025.140825","DOIUrl":"10.1016/j.tsf.2025.140825","url":null,"abstract":"<div><div>In recent years, glass substrates have gained significant attention as packaging materials for semiconductor chips and high-frequency devices, owing to their rigidity, dimensional stability, and surface smoothness. These substrates often incorporate through-glass vias formed perpendicular to the surface. Various fundamental studies have been conducted to meet the growing demand for increased computing power. However, ensuring strong adhesion between the deposited Cu layer and glass surface remains a major challenge. In this study, a Cu metallization process was investigated that achieves strong adhesion without the need for an adhesion promoter layer (APL) prior to electroless plating (ELP). The experimental conditions in the traditional ELP process, which involves repeated sensitization and activation cycles using Sn²⁺ and Pd²⁺, were optimized, and a peel strength of 6 N·cm⁻<sup>1</sup> between the deposited Cu layer and surface of the glass substrate was achieved by optimizing the number of sensitization and activation cycles. Increasing the number of sensitization and activation cycles enhanced the coverage of the glass surface with particulate Sn-Pd mixtures, leading to nearly full coverage and optimal Cu adhesion. However, excessive cycling caused the accumulation of Sn–Pd catalyst particles, which diminished the adhesion of the Cu layer. The developed method circumvents the limitations associated with conventional APLs and offers cost-effective, high throughput processing suitable for industrial application.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140825"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarity inversion of ferroelectric AlScN films by radio frequency power 射频功率对铁电AlScN薄膜极性反转的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-20 DOI: 10.1016/j.tsf.2025.140830

Yongsong Zhao , Yao Kang , Xufeng Wu , Bin Zhang , Dayu Zhou , Yi Tong , Xinpeng Wang , Jiahao Wen , Jingyi Xiao

{"title":"Polarity inversion of ferroelectric AlScN films by radio frequency power","authors":"Yongsong Zhao , Yao Kang , Xufeng Wu , Bin Zhang , Dayu Zhou , Yi Tong , Xinpeng Wang , Jiahao Wen , Jingyi Xiao","doi":"10.1016/j.tsf.2025.140830","DOIUrl":"10.1016/j.tsf.2025.140830","url":null,"abstract":"<div><div>Wurtzite-structured aluminum scandium nitride (AlScN) has emerged as a promising ferroelectric material with considerable potential for advanced electronic and optoelectronic applications. Precise control over the polarity of AlScN films is essential for their implementation in next-generation electronics. In this study, we investigate the polarity switching of AlScN films induced by variations in sputtering power, while maintaining a fixed power ratio between the Al and <em>Sc</em> targets. Our findings reveal that an increase in sputtering power enhances in-plane tensile stress within the films. Electrical characterization further shows that the asymmetry of the coercive field evolves with increasing power, transitioning from <em>E</em> + <em>C</em> > <em>E</em>- C to <em>E</em> + <em>C</em> < <em>E</em>- C, while chemical etching confirms the polarity inversion. We attribute the asymmetric behavior of the positive and negative coercive fields to the nucleation of antipolar domains. Moreover, based on photoluminescence spectroscopy combined with first-principles calculations, we ascribe this polarity inversion to a reduction in nitrogen vacancies.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140830"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Mn concentration on the structural, morphological, optical, and electrical properties of Cd1-xMnxS thin films Mn浓度对Cd1-xMnxS薄膜结构、形态、光学和电学性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-19 DOI: 10.1016/j.tsf.2025.140828

Himanshu Sharma Pathok, Alok Kumar Das, Mridusmita Boruah, Saujanya Adhyapak, Prasanta Kumar Saikia

{"title":"Effect of Mn concentration on the structural, morphological, optical, and electrical properties of Cd1-xMnxS thin films","authors":"Himanshu Sharma Pathok, Alok Kumar Das, Mridusmita Boruah, Saujanya Adhyapak, Prasanta Kumar Saikia","doi":"10.1016/j.tsf.2025.140828","DOIUrl":"10.1016/j.tsf.2025.140828","url":null,"abstract":"<div><div>Nanostructured Cd<sub>1-x</sub>Mn<sub>x</sub>S (x = 0.1, 0.2, 0.3, 0.4) thin films were successfully deposited onto glass substrates using the chemical bath deposition method. XRD analysis confirmed the crystalline nature of the films, revealing a cubic crystal structure with the (111) plane as the preferred orientation. The crystallite size increased from 8.71 to 19.98 nm as the Mn content increased. FESEM confirmed the nanostructured grain morphology, and EDX analysis verified the presence of cadmium, manganese, and sulfur elements in the films. The interplanar spacings and their corresponding planes were further identified by HRTEM analysis. FESEM cross-sectional imaging showed that the film thickness increased from ∼145.2 nm to 172.3 nm with higher Mn content, from x = 0.1 to x = 0.4. UV-Vis spectroscopic analysis indicated that the films exhibited up to 90 % transmittance in the visible range. Optical band gap energy increased progressively from ∼2.67 eV to 2.89 eV as the Mn concentration increased from x = 0.1 to x = 0.4. FTIR spectroscopy confirmed the presence of Mn–S and Cd–S bonds. The electrical conductivity of the films, as evaluated through I–V characteristics, also showed a gradual increase with increasing Mn content.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140828"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Passivity breakdown of supermartensitic stainless steel in CO2 and H2S containing brines at varying temperatures using the point defect model 采用点缺陷模型对超马氏体不锈钢在含CO2和H2S的盐水中不同温度下的钝化击穿进行研究

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-07 DOI: 10.1016/j.tsf.2025.140820

Alan Martinez , Deeparekha Narayanan , Raymundo Case , Homero Castaneda , Ahmed Bahgat Radwan , Jolly Bhadra , Noora H. Al-Qahtani , Noora Al-Thani

引用次数: 0

Nanoarchitectonics of 3D colloidal crystals with tunable band gaps via layer-by-layer transfer of monolayer colloidal crystals 通过单层胶体晶体的逐层转移，具有可调带隙的三维胶体晶体的纳米结构

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-19 DOI: 10.1016/j.tsf.2025.140826

Aijun Wang , Yao Yuan , Fangli Qin , Xiaoyu Wang

引用次数: 0

Tuning substrate temperature for improved adhesion and mechanical properties of magnetron sputtered high entropy alloy thin-films 调节衬底温度以改善磁控溅射高熵合金薄膜的附着力和力学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-10-26 DOI: 10.1016/j.tsf.2025.140817

M․ Subhakar , L. Pandey , S. Chaudhary , S.P. Jaiswal , S.S. Singh , U. Mahmud , Y.L. Chiu , I.P. Jones , J. Jain

{"title":"Tuning substrate temperature for improved adhesion and mechanical properties of magnetron sputtered high entropy alloy thin-films","authors":"M․ Subhakar , L. Pandey , S. Chaudhary , S.P. Jaiswal , S.S. Singh , U. Mahmud , Y.L. Chiu , I.P. Jones , J. Jain","doi":"10.1016/j.tsf.2025.140817","DOIUrl":"10.1016/j.tsf.2025.140817","url":null,"abstract":"<div><div>This work reports on the deposition of non-equiatomic CoCrFeNi high entropy alloy (HEA) thin films at various substrate temperatures (Room Temperature (RT), 200 °C, 300 °C, and 400 °C) on EN-24 steel substrates. The deposited films exhibited a preferred {111} crystallographic orientation and possessed a single-phase face centred cubic (FCC) crystal structure. The roughness of the film (R<sub>rms</sub>) gradually increased from ∼ 1 nm to ∼ 4 nm as the particle size grew from ∼ 20 nm to ∼ 37 nm simultaneously as the substrate temperature increased from 200 °C to 400 °C, indicating an enhancement in atomic mobility across intergranular interfaces. The hardness of the film reached to a maximum of ⁓ 17 GPa for the film fabricated at 400 °C. This increase is attributed to improved crystallinity, preferential growth orientation and higher columnar density. Notice that this hardness significantly exceeded that of steel substrate, nearly fourfold. The films deposited at 200 °C and 300 °C exhibited the exceptional adhesion in the incremental load scratch tests, with no signs of delamination. On the other hand, the films deposited at room temperature and 400 °C delaminated during the scratch test. The diffusion bond established between the film and the substrate contributed significantly towards the outstanding adhesion of the film, as evidenced by the cross-sectional Transmission Electron Microscopy (TEM) analysis.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140817"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145425622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystallographic texture evolution in NbN thin films produced by reactive magnetron sputtering 反应磁控溅射制备NbN薄膜的晶体织构演变

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-10-27 DOI: 10.1016/j.tsf.2025.140816

A.D. Schneider , P.S. Boeck , G. Copetti , T.J.A. Mori , R.D. Della Pace , L.F. Schelp , L.S. Dorneles

引用次数: 0

Fabrication of Ta/TaN diffusion-barrier thin films using DC magnetron sputtering 直流磁控溅射制备Ta/TaN扩散势垒薄膜

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-10-31 DOI: 10.1016/j.tsf.2025.140818

Byeong Hwa Jeong , Dong Woo Kim , So Hyun Lee , Chae Hyun Kang , Wen Long , Do Hyun Oh , Yong Seok Jang , Toshiya Aoyagi , Yasuyuki Taura , Yutaka Kokaze , Eung Joon Lee , Sang Ho Lee , Geun Young Yeom

{"title":"Fabrication of Ta/TaN diffusion-barrier thin films using DC magnetron sputtering","authors":"Byeong Hwa Jeong , Dong Woo Kim , So Hyun Lee , Chae Hyun Kang , Wen Long , Do Hyun Oh , Yong Seok Jang , Toshiya Aoyagi , Yasuyuki Taura , Yutaka Kokaze , Eung Joon Lee , Sang Ho Lee , Geun Young Yeom","doi":"10.1016/j.tsf.2025.140818","DOIUrl":"10.1016/j.tsf.2025.140818","url":null,"abstract":"<div><div>Herein, TaN thin films were deposited using direct current (DC) magnetron sputtering enhanced by side magnets. The produced TaN films were optimized to be used as diffusion barriers for backend-of-line (BEOL) microelectronics. The side magnets were strategically placed to control magnetic field distribution, enabling precise tuning of the etch-to-deposition ratios and the Ta/TaN thickness profiles. TaN films were deposited on silicon substrates at N₂ flow rates of 5–54 sccm, and they were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and time-of-flight secondary ion mass spectrometry (ToF–SIMS). The optimized N<sub>2</sub> flow rates were determined to be 10–18 sccm. These flow rates along with RF bias and magnetic field control improved the step coverage and densification for high-aspect-ratio trenches. XRD and XPS revealed a transition from metallic β-Ta to cubic TaN, forming a nitrogen-rich phase with remarkable barrier properties. ToF–SIMS depth profiling indicated that the TaN layer suppressed Cu diffusion under thermal stress (345 °C; 5 min), confirming the robustness of the TaN layer in Cu–Mn/Co/Ta/TaN stacks. Integrating a side magnet with the sputtering system enhanced plasma confinement and film uniformity, thereby advancing the development of Ta/TaN deposition. These findings highlight the potential of magnetic field control in sputtering systems, offering valuable insights into diffusion-barrier technology for next-generation BEOL processes.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140818"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145475470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Sb and Cu doping and precursor flow rate on the structure and composition of SnS thin films fabricated by electrostatic spray deposition Sb和Cu掺杂及前驱体流速对静电喷涂制备的SnS薄膜结构和组成的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-15 Epub Date: 2025-11-10 DOI: 10.1016/j.tsf.2025.140822

Kohta Hori, Mutsumi Sugiyama

{"title":"Effects of Sb and Cu doping and precursor flow rate on the structure and composition of SnS thin films fabricated by electrostatic spray deposition","authors":"Kohta Hori, Mutsumi Sugiyama","doi":"10.1016/j.tsf.2025.140822","DOIUrl":"10.1016/j.tsf.2025.140822","url":null,"abstract":"<div><div>In this study, a scalable electrostatic spray deposition (ESD) technique was employed to fabricate SnS thin films, and the effects of the deposition flow rate and impurity doping on their structural properties were systematically investigated. A reduction in the flow rate from 5 to 0.5 mL/h significantly decreased the Sn/S atomic ratio from 1.2 to 0.3, along with a reduction in the crystal size from 120 to 20 nm. The results demonstrate that the crystalline quality and stoichiometry of SnS films can be finely tuned by controlling the deposition kinetics. Furthermore, doping with 20% Sb in the precursor solution improved the crystallinity without introducing extra phases, indicating effective substitution at Sn sites. Conversely, Cu doping at the same nominal concentration induced the formation of Cu<sub>2</sub>SnS<sub>3</sub> and other extra phases, indicating the tendency of Cu to form mixed chalcogenide compounds under ESD conditions. These findings demonstrate the capability of ESD for the scalable synthesis of SnS thin films and its potential for precise doping control to analyze complex phase formation in multinary chalcogenide systems.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140822"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145526513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Alumina layers deposited with different precursors by atomic layer deposition and magnetron sputtering: negative charge and its origin 原子层沉积和磁控溅射制备不同前驱体的氧化铝层：负电荷及其来源

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-12-01 Epub Date: 2025-11-07 DOI: 10.1016/j.tsf.2025.140819

Vl. Kolkovsky

{"title":"Alumina layers deposited with different precursors by atomic layer deposition and magnetron sputtering: negative charge and its origin","authors":"Vl. Kolkovsky","doi":"10.1016/j.tsf.2025.140819","DOIUrl":"10.1016/j.tsf.2025.140819","url":null,"abstract":"<div><div>This work investigates the origin and behavior of negative fixed charge in Al<sub>2</sub>O<sub>3</sub> layers deposited by atomic layer deposition (ALD) using H<sub>2</sub>O and O<sub>3</sub> as oxidants, and by magnetron sputtering (MS). The fixed charge density (C<sub>Fix</sub>) and interface state density (D<sub>it</sub>) were evaluated through C–V and G–V measurements on MOS capacitors before and after annealing at various temperatures (400–800 °C). In as-deposited amorphous layers, the negative charge was consistently lower than in crystalline Al<sub>2</sub>O<sub>3</sub>, and lower in H<sub>2</sub>O-based ALD films compared to O<sub>3</sub>-based ones. Upon annealing, the fixed charge in H<sub>2</sub>O-based films fluctuated, while remaining relatively stable in O<sub>3</sub>-based layers. All annealed samples exhibited low interface state densities (<10<sup>10</sup> cm<sup>-2</sup>eV<sup>-1</sup>) in amorphous Al<sub>2</sub>O<sub>3</sub>. Following crystallization at 800 °C, both C<sub>Fix</sub> and D<sub>it</sub> increased substantially, with H<sub>2</sub>O-based samples showing higher fixed charge and O<sub>3</sub>-based samples exhibiting higher D<sub>it</sub>. The results suggest that negative fixed charge in amorphous Al<sub>2</sub>O<sub>3</sub> cannot be fully explained by interfacial effects alone, and that hydrogen-related defects can play a significant role.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"831 ","pages":"Article 140819"},"PeriodicalIF":2.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145517649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0