Thin Solid Films最新文献

{"title":"Improving the performance of organic solar cell via tuning the interfacial n-doping of cathode-modifying layer","authors":"Longdi Li,&nbsp;Jiatong Li,&nbsp;Dashan Qin","doi":"10.1016/j.tsf.2024.140541","DOIUrl":"10.1016/j.tsf.2024.140541","url":null,"abstract":"<div><div>Organic solar cells have been fabricated using thermally evaporated bathocuproine (BCP) and ytterbium <em>n</em>-doped BCP (BCP:Yb) to modify the interfaces of active layer and cathode. The device with 10 nm BCP presents open-circuit voltage of 0.791 V and fill factor of 0.670, greater than those (0.785 V and 0.636) of the device with 10 nm BCP:Yb, mostly due to that the BCP:Yb causes severe nonradiative recombination in active layer. The device with 1 nm BCP/9 nm BCP:Yb offers open-circuit voltage of 0.793 V, almost same as that of the device with 10 nm BCP, due to the two following reasons. Firstly, the interlayer of 1 nm BCP is able to separate active layer from BCP:Yb, thereby preventing the nonradiative recombination. Secondly, the BCP interlayer is so thin that the interfacial <em>n</em>-doping of Yb in it raises the Fermi level close to its lowest unoccupied molecular orbital level, whereby it forms ohmic contacts with active layer and BCP:Yb. Despite showing decreased fill factors, the devices with 10 nm BCP:Yb and 1 nm BCP/9 nm BCP:Yb give short-circuit current densities of 15.43 and 15.62 mA cm⁻², respectively, larger than that (14.47 mA cm⁻²) of the device with 10 nm BCP. The power conversion efficiency based on 1 nm BCP/9 nm BCP:Yb is 8.11 %, higher than those based on 10 nm BCP (7.67 %) and 10 nm BCP:Yb (7.71 %). The current research indicates that tuning the interfacial <em>n</em>-doping of cathode-modifying layers is a facial and effective method to improve the performance of organic solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140541"},"PeriodicalIF":2.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Determination of thermal conductivity of phase pure 10H-SiC thin films by non-destructive Raman thermometry","authors":"Madhusmita Sahoo ,&nbsp;Kalyan Ghosh ,&nbsp;Swayamprakash Sahoo ,&nbsp;Pratap K. Sahoo ,&nbsp;Tom Mathews ,&nbsp;Sandip Dhara","doi":"10.1016/j.tsf.2024.140536","DOIUrl":"10.1016/j.tsf.2024.140536","url":null,"abstract":"<div><div>The 10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device fabrication. Micro-Raman method serves as an important tool in this aspect and is known as Raman thermometry. It utilises a steady-state heat transfer model in a semi-infinite half space and provides for an effective technique to measure thermal conductivity of films as a function of film thickness and laser spot size. This method has two limiting conditions i.e. thick film limit and thin film limit. The limiting conditions of this model was explored by simulating the model for different film thicknesses at constant laser spot size. 10H SiC films of three different thicknesses i.e. 104, 135 and 156 nm were chosen to validate the thin film limiting condition. Thermal conductivity of these thin films varied from 0.60 – 4.80 <span><math><mrow><mo>(</mo><msup><mrow><mi>Wm</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mrow><mi>K</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><mo>)</mo></mrow></math></span>.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140536"},"PeriodicalIF":2.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive quantifying of the Fe-Ti-B film magnetic microstructure","authors":"E.V. Harin ,&nbsp;E.N. Sheftel ,&nbsp;V.A. Tedzhetov ,&nbsp;D.M. Gridin ,&nbsp;V.V. Popov ,&nbsp;T.P. Kaminskaya ,&nbsp;A.B. Granovsky","doi":"10.1016/j.tsf.2024.140544","DOIUrl":"10.1016/j.tsf.2024.140544","url":null,"abstract":"<div><div>Investigation and quantifying of the parameters of the phase and structure state, static magnetic properties, magnetic microstructure formed over the entire volume of the film and in the near-surface layer, the surface roughness of Fe_72.4Ti_5.4B_19.2O_3.0 film were carried out using the combination of the methods such as x-ray diffraction, magnetic force microscopy, atomic force microscopy, vibrating-sample magnetometry, and the correlation magnetometry. The Fe_72.4Ti_5.4B_19.2O_3.0 films on glass substrates were produced by magnetron deposition followed by the vacuum annealing at 200 °С for 1 h. The interrelation between the investigated parameters was highlighted.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140544"},"PeriodicalIF":2.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure, mechanical, and tribological properties of Ag2CrO4 high-temperature oxide coatings","authors":"Zhong Zeng ,&nbsp;Lei Zhang ,&nbsp;Vasiliy Pelenovich ,&nbsp;Qiang Wan ,&nbsp;Xinggang Zhan ,&nbsp;Tao Xu ,&nbsp;Longwei Hu ,&nbsp;Yan Liu ,&nbsp;Zhenggang Li ,&nbsp;Bing Yang ,&nbsp;Yanming Chen","doi":"10.1016/j.tsf.2024.140533","DOIUrl":"10.1016/j.tsf.2024.140533","url":null,"abstract":"<div><div>In this research, a series of Ag₂CrO₄ high-temperature self-lubricating oxide coatings were prepared by reactive radio frequency magnetron sputtering under different argon-oxygen flow ratio (Ar:O₂ ratio) conditions. Effects of the gas flow ratio on phase composition, coating morphology, high temperature treatment in air atmosphere, mechanical and tribological properties are studied. A low Ar:O₂ flow ratio is beneficial for the formation of Ag₂CrO₄ phase. At high temperature treatment, formation of surface Ag particle and volatility and decomposition of the Ag₂CrO₄ phase are observed, and the volatility and decomposition of the coating are slight at temperatures below 500 °C. When the Ar:O₂ ratio is 1:1, the coating shows exceptional comprehensive performance, it is dense with a smooth surface, excellent toughness and bond strength, and the lowest wear rate and coefficient of friction, which is 0.14 mm³/10⁻³N∙m and 0.35 respectively. The coating can function as a lubricant in temperature environments of 500 ℃ and below, demonstrating practical application value.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140533"},"PeriodicalIF":2.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Opto-electronic responses of large area WSe2 layers synthesized by chemical conversion of WO3 thin films","authors":"Rohit R. Srivastava ,&nbsp;Serene Kamal ,&nbsp;Ravinder Kumar ,&nbsp;Alexander Samokhvalov ,&nbsp;David Shrekenhamer ,&nbsp;Susanna M. Thon ,&nbsp;Ramesh C. Budhani","doi":"10.1016/j.tsf.2024.140535","DOIUrl":"10.1016/j.tsf.2024.140535","url":null,"abstract":"<div><div>Atomically thin tungsten diselenide (WSe₂) has drawn much interest due to its remarkable optical properties and potential applications in next-generation optoelectronics and energy harvesting devices. High-quality, wafer-scale synthesis of such two-dimensional (2D) semiconductors is necessary for their practical applications. Chemical vapor deposition (CVD) is a promising method for synthesizing large-area thin films of 2D materials where the constituent elements are of widely different vapor pressure. Herein, we demonstrate large-area synthesis of the 2H phase of WSe₂ with a precise control over the 2D film thickness. The first step of this process is the deposition of tungsten trioxide (WO₃) films of a well-defined thickness by thermal evaporation over large areas. The subsequent selenization of these films in an atmospheric pressure CVD reactor, yields high-quality uniform films of WSe₂. The quality of these films is ascertained by measuring their characteristic Raman active vibrational modes and layer thickness dependent optical absorption and photoluminescence. The photoconductivity (PC) of these films has been measured with 405, 532 and 915 nm laser excitation. We note an increase in the PC of the films with their thickness. The best photoresponsivity and detectivity obtained are 11.3 mA/W and 1.42 × 10⁸ Jones respectively. These results are promising to create photo-transistor arrays over large areas using such WO₃ processed films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140535"},"PeriodicalIF":2.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142327193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amorphous TiNiSn thin films for mechanical flexibility in thermoelectric applications","authors":"Sana Khayyamifar ,&nbsp;Grzegorz Sadowski ,&nbsp;Johan Hektor ,&nbsp;Denis Music","doi":"10.1016/j.tsf.2024.140534","DOIUrl":"10.1016/j.tsf.2024.140534","url":null,"abstract":"<div><div>Thermoelectric devices convert heat to electricity without greenhouse gas emissions and have the potential to serve as energy sources in wearable devices. Ongoing efforts are focused on designing materials that offer both high conversion efficiency and mechanical flexibility. Half-Heusler materials, such as TiNiSn, exhibit promising chemical stability and thermoelectric efficiency, but their inherent brittleness poses challenges for applications in flexible devices. Here, TiNiSn thin films were deposited by DC magnetron sputtering at room temperature to investigate their response to bending for flexible devices applications. Therefore, different substrates were considered: Si, Kapton, silk, and printer paper, whereas Si was used as a reference. The composition and structure of the deposited thin films were analyzed by employing energy-dispersive X-ray spectroscopy and wide-angle X-ray scattering, respectively. The film morphology was examined via scanning electron microscopy. Additionally, density functional theory (DFT) was employed to explore interfaces between the flexible substrates and amorphous TiNiSn and calculate the Cauchy pressure, a key indicator of ductile/brittle behavior. Amorphous TiNiSn thin film exhibits good adhesion to flexible Kapton, silk, and paper substrates. Mechanical loading, namely bending up to 154°, was applied to assess crack formation, revealing only a few cracks at 78° and 154°, thus indicating a certain level of flexibility. DFT data support these findings, showing intermediate adhesion strength between amorphous TiNiSn and monomers from the flexible substrates. The calculated Cauchy pressure of 30 GPa suggests the ductility of TiNiSn in the amorphous state. Therefore, replacing alternative time-consuming synthesis methods, eliminating the demand for high temperatures, and providing a nontoxic and cost-effective material with good adhesion to various substrates are reasons why amorphous TiNiSn thin film emerges as a good candidate for flexible thermoelectric devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140534"},"PeriodicalIF":2.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0040609024003353/pdfft?md5=45ce19f9f71c1c39296eaa5b1a228eea&pid=1-s2.0-S0040609024003353-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142311566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An amperometric stability study of titanium dioxide nanoparticle layer on interdigitated electrode contact based on morphology, structure, and surface-induced response","authors":"Mohamad Nizar Hadi Mohamad Nassir ,&nbsp;Sh. Nadzirah ,&nbsp;Azrul Azlan Hamzah ,&nbsp;Ahmad Ghadafi Ismail ,&nbsp;Hung Wei Yu ,&nbsp;Edward Yi Chang ,&nbsp;Chang Fu Dee","doi":"10.1016/j.tsf.2024.140526","DOIUrl":"10.1016/j.tsf.2024.140526","url":null,"abstract":"<div><p>This paper investigates the amperometric stability of a Titanium Dioxide (TiO₂) nanoparticle layer on an interdigitated electrode (IDE) to develop stable electronic devices. The devices were tested with varying numbers of spin-coat layers and annealing temperatures to achieve a TiO₂ nanoparticle layer with high crystallinity. Device fabrication involved coating a TiO₂ solution onto a silicon dioxide (SiO₂) wafer with an IDE photomask. The devices were characterized using a Field-emission Scanning Electron Microscope (FESEM) and X-ray Diffractometer (XRD) to verify the crystallinity of the TiO₂. Current-voltage (<em>I-V</em>) curves and real-time current measurements were also conducted to analyze the electrical properties of the device. FESEM results indicate that increasing the number of spin-coat layers and annealing temperature enhances the clarity of the spherical shape of TiO₂ nanoparticles and produces highly crystalline nanoparticles, as confirmed by XRD analysis. In terms of electrical analysis, the device exhibited a sharp increase in current, maintaining a range of 2.5 nA to 10 nA. This concludes that the TiO₂ device is highly sensitive, with excellent repeatability and response time, making it suitable for practical applications.</p></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"806 ","pages":"Article 140526"},"PeriodicalIF":2.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142270631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the mechanism of enhancing interfacial adhesion of SiOx films on GaAs substrates through process optimization","authors":"Zhiwei He ,&nbsp;Jiuru Gao ,&nbsp;Chanjuan Liu ,&nbsp;Zichao Li ,&nbsp;Kaidong Xu ,&nbsp;Shiwei Zhuang","doi":"10.1016/j.tsf.2024.140530","DOIUrl":"10.1016/j.tsf.2024.140530","url":null,"abstract":"<div><p>In the manufacturing of GaAs-based quantum well (QW) lasers, the adhesion between the Silicon dioxide (SiO_x) film layer and the Gallium arsenide (GaAs) substrate is crucial for the performance and durability of semiconductor devices. This study focused on depositing SiO_x films on GaAs substrates using plasma-enhanced chemical vapor deposition (PECVD). The research aimed to investigate the impact of different coating processes on the deposition rate, properties, and composition of the coatings. The interfacial adhesion of various samples was assessed using nano-scratch tests. The results revealed that samples with lower SiH₄ gas flow and RF power, or higher process pressure exhibited stronger adhesion strength. It's further observed that optimizing the process parameters reduced residual stresses in the film, thereby enhancing the GaAs-SiO_x interfacial bonding. This work has the potential to significantly reduce the possibility of QW lasers malfunctions, improve the reliability of semiconductor devices and provide valuable insights for future studies on enhancing film-substrate adhesion.</p></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"806 ","pages":"Article 140530"},"PeriodicalIF":2.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application","authors":"Shubham Patil ,&nbsp;Adityanarayan H Pandey ,&nbsp;Swagata Bhunia ,&nbsp;Sandip Lashkare ,&nbsp;Apurba Laha ,&nbsp;Veeresh Deshpande ,&nbsp;Udayan Ganguly","doi":"10.1016/j.tsf.2024.140529","DOIUrl":"10.1016/j.tsf.2024.140529","url":null,"abstract":"<div><p>Silicon on Insulator (SOI) technology has been the promising solution for the On-chip low-power mixed-signal systems. However, the traditional smart-cut method for SOI wafer fabrication is costly. Hence, in this work, we present an optimized methodology to fabricate a wafer scale single-crystalline Si on epitaxial Gd₂O₃/Si(111) substrate (SOXI) using a low-cost, high volume manufacturable (HVM)-friendly Radio Frequency magnetron sputtering technique for SOI application. The grown Si and Gd₂O₃ layers are physically characterized using high-resolution X-ray Diffraction and high-resolution Transmission Electron Microscopy (HRTEM). The Grazing Incidence X-ray Diffraction, Pole Figure, and HRTEM imaging confirm the formation of an epitaxial Top-Si layer on the epitaxial-Gd₂O₃/Si(111) substrate. Hence, we demonstrate a low-cost, HVM-friendly technique for the fabrication of SOXI wafers.</p></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"806 ","pages":"Article 140529"},"PeriodicalIF":2.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142239965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Saturation degree in dopant monolayers as modulator of Al-doping of ZnO by the Atomic Layer Deposition-supercycle approach","authors":"Dalia Alejandra Mazón-Montijo ,&nbsp;Axel Agustín Ortiz-Atondo ,&nbsp;Gerdany Zúñiga-Verdugo ,&nbsp;Dagoberto Cabrera-German ,&nbsp;Obed Yamín Ramírez-Esquivel ,&nbsp;Zeuz Montiel-González","doi":"10.1016/j.tsf.2024.140532","DOIUrl":"10.1016/j.tsf.2024.140532","url":null,"abstract":"<div><p>Transparent conductive oxides are trending topic in science and technology due to counterintuitive properties: optical transparency and high electrical conductivity. ZnO is a promising example with optoelectronic properties enhanced by supervalent doping. Al-doped ZnO (AZO) has emerged as leading candidate to replace environmentally hazardous In-doped SnO₂. However, an ongoing debate exists regarding whether Al-doping improves its optoelectronic properties by substitutional doping or by promoting active defects. Here, we focused on Al-doping of ZnO by atomic layer deposition (ALD) applying the supercycle approach, showing that, decreasing Zn precursor dosing during dopant cycles, the decreasing saturation degree of Zn-species monolayers leads to morphological and microstructural changes that negatively impact optoelectronic properties, whereas Al content remains invariant. Our results demonstrate that unsaturated surfaces after decreasing Zn precursor dosing play a crucial role in Al incorporation, suggesting that, to maximize the effect of doping, complete oxide substitution reactions rather than those of conventional ALD must control growth, while crystallinity must remain. These findings could impact strategy designing for optimization of optoelectronic properties of AZO films deposited by ALD by inclining the debate towards the hypothesis that electrical properties are determined by Al substitutional doping together with active defects formed due to substitutional doping itself.</p></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"806 ","pages":"Article 140532"},"PeriodicalIF":2.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}