Thin Solid FilmsPub Date : 2024-10-11DOI: 10.1016/j.tsf.2024.140551
Hee jun Yoon , Hyeongtag Jeon
{"title":"Impact of plasma power on plasma enhanced atomic layer deposited TiO2 as a spacer","authors":"Hee jun Yoon , Hyeongtag Jeon","doi":"10.1016/j.tsf.2024.140551","DOIUrl":"10.1016/j.tsf.2024.140551","url":null,"abstract":"<div><div>As the size of devices is scaled down, micro-patterning technology is increasing in importance. In micro-patterning, spacers require precise thickness and uniform deposition at low temperature. To meet these requirements, atomic layer deposition (ALD), which can be controlled to an accurate thickness, was introduced. Therefore, we investigated plasma-enhanced ALD using radicals for high reactivity. Optical emission spectroscopy and a Langmuir probe were used to evaluate plasma properties such as radical intensity and plasma density at different plasma powers. Regardless of plasma power, growth per cycle and compositions of Ti and O remained constant. X-ray photoelectron spectroscopy showed that application of 500 W decreased the area of Ti<sub>2</sub>O<sub>3</sub> from 20.2 % to 4.5 % compared with 100 W due to the increased amount of oxygen radicals. X-ray reflectivity results showed a 4.09 g/cm<sup>3</sup> density of TiO<sub>2</sub> film at 100 W, which increased to 4.2 g/cm<sup>3</sup> at 500 W, indicating a decrease of Ti<sub>2</sub>O<sub>3</sub>. Meanwhile, the wet etch rate of TiO<sub>2</sub> film was 1.72 Å/min at 100 W and 0.8 Å/min at 500 W, and the denser film had superior etch resistance. Finally, transmission electron microscopy showed that step coverage of TiO<sub>2</sub> films improved from 90.9 % to 99.9 % with increasing power. Thus, application of high power effectively improved the properties of TiO<sub>2</sub> films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140551"},"PeriodicalIF":2.0,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142445776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effects of ultraviolet sterilization exposure on the structural and surface properties of graphite-/polymer-like carbon films","authors":"Kazuya Kanasugi , Eito Ichijo , Ali Alanazi , Yasuharu Ohgoe , Yoshinobu Manome , Masanori Hiratsuka , Kenji Hirakuri","doi":"10.1016/j.tsf.2024.140549","DOIUrl":"10.1016/j.tsf.2024.140549","url":null,"abstract":"<div><div>Existing research on the biological responses of amorphous carbon films has not adequately explored the influences of exposure to ultraviolet (UV) sterilization at 253.7 nm before cell culture. Thus, in this study, two types of amorphous carbon films, namely hydrogen-rich graphite-like carbon (GLC) and hydrogen-free polymer-like carbon (PLC) films, were deposited on Si substrates. The influences of different doses of UV sterilization exposure (at 253.7 nm) on the structures and surface properties of the amorphous carbon films were investigated. Spectroscopic ellipsometry and Raman analysis showed that there is no significant change in the optical constants and Raman spectra of GLC and PLC films. The surface properties of the amorphous carbon films, characterized by water contact angle measurements and X-ray photoelectron spectroscopy analysis, indicated that both types of films exhibited hydrophilicity and surface oxidation in response to UV sterilization. However, the effects of UV sterilization on PLC were more notable than those on GLC. Our findings highlight the need for standardization and optimization of UV sterilization conditions for specific films to promote the application of amorphous carbon film coatings in the medical domain.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140549"},"PeriodicalIF":2.0,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-10-09DOI: 10.1016/j.tsf.2024.140548
Yong-Lie Sun , Toshihide Nabatame , Jong Won Chung , Tomomi Sawada , Hiromi Miura , Manami Miyamoto , Kazuhito Tsukagoshi
{"title":"Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors","authors":"Yong-Lie Sun , Toshihide Nabatame , Jong Won Chung , Tomomi Sawada , Hiromi Miura , Manami Miyamoto , Kazuhito Tsukagoshi","doi":"10.1016/j.tsf.2024.140548","DOIUrl":"10.1016/j.tsf.2024.140548","url":null,"abstract":"<div><div>p-Type tin(II) oxide (SnO (Sn<sup>2+</sup>)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnO<em><sub>x</sub></em> film deposited from an SnO<em><sub>x</sub></em> (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (<em>P</em><sub>O2</sub>) of 0 Pa consisted of 2 % Sn (Sn<sup>0</sup>), 42 % Sn<sup>2+</sup>, and 56 % SnO<sub>2</sub> (Sn<sup>4+</sup>). However, compared with the Sn<sup>2+</sup> fraction observed after PDA under N<sub>2</sub> and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10<sup>−4</sup> Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO<sub>2</sub> to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (<em>I</em><sub>on</sub>/<em>I</em><sub>off</sub>) ratio of 5.1 × 10<sup>4</sup> and a hole field-effect mobility (µ<sub>FE</sub>) of 1.8 cm<sup>2</sup>/(V·s).</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140548"},"PeriodicalIF":2.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-10-09DOI: 10.1016/j.tsf.2024.140540
B.R. Ilyassov , A.M. Alekseev , A.K. Abisheva , A.K. Zeinidenov , A.K. Aimukhanov
{"title":"The evolution of morphology and structure of spin-coated Zinc Acetate thin films and their impact on ZnO film morphology","authors":"B.R. Ilyassov , A.M. Alekseev , A.K. Abisheva , A.K. Zeinidenov , A.K. Aimukhanov","doi":"10.1016/j.tsf.2024.140540","DOIUrl":"10.1016/j.tsf.2024.140540","url":null,"abstract":"<div><div>The deposition of ZnO thin films using sol-gel technology is a straight forward and widely used method for fabricating ZnO films with diverse morphologies and tunable electrical and optical properties. Notably, the preparation of ZnO compact layers from a zinc acetate and monoethanolamine (ZA:MEA) solution via spin-coating has gained popularity due to its simplicity. The pretreatment of spin-coated ZA:MEA films significantly impacts the morphology and structure of the resulting ZnO films. While the effects of preheating and its rate on ZnO precursor films have been extensively studied, the morphological and structural evolution of ZA:MEA films immediately after spin-coating and its subsequent impact on the final ZnO film have not been previously explored. In this study, we present the topography and phase composition of as-grown ZA:MEA films using atomic force microscopy (AFM). We conduct an in-situ investigation of the morphological evolution of ZA:MEA films. Our results reveal that as-grown ZA:MEA films possess an inhomogeneous structure. AFM phase image shows two distinct domains in the ZA:MEA films. Over time, we observe the growth of crystals in both vertical and perpendicular directions. ZA:MEA film aged for at least 20 h develops arrays of vertically oriented crystals throughout the film covered with sheet-like crystals forming on the film surface. This temporal evolution in the morphology and structure of ZA:MEA films significantly influences the morphology of the final ZnO film.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140540"},"PeriodicalIF":2.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-10-05DOI: 10.1016/j.tsf.2024.140547
Ahsan Hayat , Markus Ratzke , Carlos Alvarado Chavarin , Marvin H. Zoellner , Agnieszka Anna Corley-Wiciak , Markus Andreas Schubert , Christian Wenger , Inga A. Fischer
{"title":"Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration","authors":"Ahsan Hayat , Markus Ratzke , Carlos Alvarado Chavarin , Marvin H. Zoellner , Agnieszka Anna Corley-Wiciak , Markus Andreas Schubert , Christian Wenger , Inga A. Fischer","doi":"10.1016/j.tsf.2024.140547","DOIUrl":"10.1016/j.tsf.2024.140547","url":null,"abstract":"<div><div>Cerium oxides have potential applications ranging from low-temperature gas sensing to photodetection. A back-end-of-line integration of the material into complementary metal-oxide-semiconductor device fabrication processes has many advantages but places limits on material deposition, most notably the thermal budget for deposition and annealing. Here, we investigate thin cerium oxide films deposited by radio frequency (RF) magnetron sputtering at substrate temperatures of 300 °C and RF magnetron powers between 30 W and 70 W without any post-deposition annealing steps. Our investigation of the structural and morphological properties reveals a columnar texture of the thin films, and we find that the material is composed predominantly of CeO<sub>2</sub> (111), with a large degree of crystallinity. We discuss implications for resistive gas sensing applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140547"},"PeriodicalIF":2.0,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-10-05DOI: 10.1016/j.tsf.2024.140546
Portia J. Allen, Simeon Gilbert, Michael P. Siegal, Ping Lu, Peter A. Sharma
{"title":"Hydrogen implantation in lanthanum thin films for ambient pressure hydride formation","authors":"Portia J. Allen, Simeon Gilbert, Michael P. Siegal, Ping Lu, Peter A. Sharma","doi":"10.1016/j.tsf.2024.140546","DOIUrl":"10.1016/j.tsf.2024.140546","url":null,"abstract":"<div><div>Near room temperature superconductivity of metal superhydrides has been shown both theoretically and experimentally at high pressures (<span><math><mrow><mo>></mo><mn>100</mn></mrow></math></span> GPa). Taking advantage of room temperature superconductivity for engineering applications requires decreasing the pressure of formation while retaining the superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure in order to form a lanthanum hydride phase. We found evidence for granular superconductivity below 5 K consistent with the phase coexistence of lanthanum hydride and lanthanum. As the H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose increased, <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed the granular structure of the films. Although a superhydride phase requires a higher H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose than what was attained in this work, we have demonstrated that ion implantation at ambient pressure is a feasible technique for superconducting lanthanum hydride formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140546"},"PeriodicalIF":2.0,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142437860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-09-29DOI: 10.1016/j.tsf.2024.140545
Yusi Wang , Tingting Zheng , Pengyuan Wu , Chenying Yang , Oleksiy V. Penkov , Yujie Liu , Kaixin Yuan , Yan Cheng , Yueguang Zhang , Weidong Shen
{"title":"Hard antireflection coatings with enhanced mechanical properties based on gradient structure","authors":"Yusi Wang , Tingting Zheng , Pengyuan Wu , Chenying Yang , Oleksiy V. Penkov , Yujie Liu , Kaixin Yuan , Yan Cheng , Yueguang Zhang , Weidong Shen","doi":"10.1016/j.tsf.2024.140545","DOIUrl":"10.1016/j.tsf.2024.140545","url":null,"abstract":"<div><div>Antireflection (AR) coatings with sapphire-like hardness are highly desired in various applications. Traditionally, hard AR coatings resist penetration, scratching, and abrasion by depositing a hard layer, such as silicon nitride (Si<sub>3</sub>N<sub>4</sub>), with a 1 to 2 µm thickness. However, thick Si<sub>3</sub>N<sub>4</sub> thin films, fabricated by high-energy inductively coupled plasma assisted (ICP-assisted) sputtering, often introduce high residual stress, leading to severe buckling problems when the surface is scratched. To address these challenges, we employ a \"Step up-step down\" design method, integrating a hardness gradient structure with a series of SiO<sub>x</sub>N<sub>y</sub> films. This approach achieves high optical transmittance (Tave > 98.7 % at 420–720 nm), low residual stress (∼680 MPa), improved scratch resistance, and strong adhesion at the film-substrate interface (L<sub>C3</sub> ∼180 mN). Our findings demonstrate significant potential for various mechanical and optical applications, including automotive and consumer electronics devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140545"},"PeriodicalIF":2.0,"publicationDate":"2024-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-09-28DOI: 10.1016/j.tsf.2024.140538
Rodrigo D. Santos , Natasha M. Suguihiro , Victor M. Paiva , Eliane D’Elia , Braulio S. Archanjo , Wallace C. Nunes
{"title":"Probing the influence of morphological variations on the electrochemical properties of cobalt ferrite nanostructures produced by pulsed laser deposition","authors":"Rodrigo D. Santos , Natasha M. Suguihiro , Victor M. Paiva , Eliane D’Elia , Braulio S. Archanjo , Wallace C. Nunes","doi":"10.1016/j.tsf.2024.140538","DOIUrl":"10.1016/j.tsf.2024.140538","url":null,"abstract":"<div><div>A higher surface-to-volume ratio typically enhances capacitance in supercapacitor electrodes. However, excessive porosity can increase electrical resistance, counteracting this benefit. This study optimized the compaction level of CFO (Cobalt Ferrite Oxide) nanoparticles for enhanced supercapacitor performance. Nanoparticle-assembled CFO films with varying compaction were produced via pulsed laser deposition while maintaining consistent crystal structure and particle size. Characterization using electron microscopy and electrochemical techniques revealed a strong correlation between compaction and capacitance. All CFO nanoparticle-assembled films exhibited superior pseudocapacitive behavior compared to CFO thin films, with the most compacted nanoparticle-assembled film achieving a high areal capacitance of 6 mF cm<sup>−2</sup>.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140538"},"PeriodicalIF":2.0,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimization of laser patterning process for eco-friendly tin-halide perovskite solar module – with a nanosecond green laser","authors":"Basavaraju Uppara , Simranjeet Singh , Sushobhan Avasthi , Prakash Vinod , Nagahanumaiah , Praveen C Ramamurthy","doi":"10.1016/j.tsf.2024.140542","DOIUrl":"10.1016/j.tsf.2024.140542","url":null,"abstract":"<div><div>The tin-based perovskite solar cells are promising future eco-friendly photovoltaic technology with increasing efficiency, which relies on fluorine-doped tin oxide (FTO) or indium tin oxide (ITO) as a transparent conducting oxide (TCO) for front contact. In the monolithic module fabrication process interconnections are executed by a series of three scribes with two different lasers 1064 nm and 532 nm. This study aims to simplify the interconnection process in tin-based perovskite solar modules by using a single visible laser source to perform all three scribes. The study uses an inverted device structure of Glass/TCO/ Poly(3,4-ethylenedioxythiophene): Polystyrene sulfonate (PEDOT: PSS)/Formamidinium-tin-iodide (FASnI<sub>3</sub>)/C60/Bathocuproine (BCP)/Ag and a 532 nm nanosecond pulsed laser source to pattern the ITO and FTO (P1 scribe), the PEDOT: PSS/FASnI<sub>3</sub>/C60/BCP stack (P2 scribe), and the PEDOT: PSS/FASnI<sub>3</sub>/C60/BCP/Ag (P3 scribe). The quality of the P1 scribe is assessed by examining the edges, completeness of film removal, cracking, film delamination, and elemental mapping using a stylus profiler, optical microscope, and energy dispersive x-ray spectroscopy. The P1 scribe is completely removed with line widths of 70 µm and 110 µm of ITO and FTO, respectively, without damage to the glass substrate. The profiles are steep, and the electrical isolation is greater than 40 MΩ. The same 532 nm laser is used for P2 and P3 scribes. The ablation of PEDOT: PSS during P2 and P3 scribe is studied by Raman spectroscopy. The results show that the use of a single 532 nm laser source can simplify the patterning process of monolithic tin-based perovskite solar modules, and potentially reduce production costs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140542"},"PeriodicalIF":2.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2024-09-26DOI: 10.1016/j.tsf.2024.140543
Xuemeng Shen, Xinbo Xiong, Ju Ma, Haixia Qian
{"title":"Two-step cathodic microwave electrodeposition for construction of Co9S3(OH)5@Ni(OH)2 hetero-structure as supercapacitor electrode materials","authors":"Xuemeng Shen, Xinbo Xiong, Ju Ma, Haixia Qian","doi":"10.1016/j.tsf.2024.140543","DOIUrl":"10.1016/j.tsf.2024.140543","url":null,"abstract":"<div><div>The preparation of two-phase electrode materials of Co<sub>9</sub>S<sub>8</sub>@Ni(OH)<sub>2</sub> typically involves a laborious three-step process. In this study, a two-step cathode microwave electrochemical method was proposed for the fabrication of Co<sub>9</sub>S<sub>8</sub>@Ni(OH)<sub>2</sub> electrode materials for supercapacitors, eliminating the need for precursor synthesis. This approach not only simplified the preparation process and saved time but also successfully produced a p-n heterostructure electrode material consisting of Co<sub>9</sub>S<sub>8</sub>@Ni(OH)<sub>2</sub> phases, where the Co<sub>9</sub>S<sub>8</sub> phase has a chemical formula of Co<sub>9</sub>S<sub>3</sub>(OH)<sub>5.</sub> This unique structure is capable of inducing an internal electrical field by facilitating the transfer of charge carriers from Co<sub>9</sub>S<sub>3</sub>(OH)<sub>5</sub> to Ni(OH)<sub>2</sub>, thereby enhancing charge transfer kinetics. As a result, the electrode exhibited remarkable supercapacitive performance, achieving a high specific capacitance of 255.4 mAh g<sup>-1</sup> (7.56 F cm<sup>-2</sup>) at 1 A g<sup>-1</sup>. Even at a 20-fold increase in charge/discharge current density, the specific capacitance remained high at 218.9 mAh g<sup>-1</sup> (6.48 F cm<sup>-1</sup>), retaining 85.8 % of the initial capacity. Furthermore, the Co<sub>9</sub>S<sub>3</sub>(OH)<sub>6</sub>@Ni(OH)<sub>2</sub> electrode materials demonstrated excellent durability, enduring 10000 cycles with a capacitance retention of 92.9 % of the initial value. An asymmetric supercapacitor constructed with Co<sub>9</sub>S<sub>3</sub>(OH)<sub>5</sub>@Ni(OH)<sub>2</sub> as the anode and a commercial active carbon film as the cathode was able to power a red light diode continuously emitting light for up to 42 min.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140543"},"PeriodicalIF":2.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142358641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}