Thin Solid FilmsPub Date : 2026-01-01Epub Date: 2025-12-10DOI: 10.1016/j.tsf.2025.140840
A. Farhadizadeh , Y. Wei , M. Odén
{"title":"Compositional effects on the structural, mechanical, and electrical properties of Cr–Nb–N thin films","authors":"A. Farhadizadeh , Y. Wei , M. Odén","doi":"10.1016/j.tsf.2025.140840","DOIUrl":"10.1016/j.tsf.2025.140840","url":null,"abstract":"<div><div>This study reports the structural, morphological, mechanical, and electrical properties of Cr-Nb-N films deposited on MgO (001) and c-plane sapphire substrates by dc magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, nanoindentation, and electrical resistivity measurements. High-quality epitaxial Cr and CrN films were obtained, and the effects of Nb and N incorporation were systematically analyzed. Cr films on MgO remained epitaxial with increased hardness and electric resistivity when the Nb content was increased to 12%, while a high Nb content (40 at%) resulted in a nanocrystalline film. Adding nitrogen to such nanocrystalline Cr–Nb alloys yielded a phase mixture of metallic and ternary nitrides, which enhanced the hardness up to 26 GPa and resulted in a large variation in the electrical behavior. Additions of Nb into epitaxial CrN resulted in a linear lattice expansion while decreasing the electrical resistivity of CrN by two orders of magnitude. These findings demonstrate that precise control of Nb and nitrogen enables tunable structural, mechanical, and electrical properties in Cr-Nb-N films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140840"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"DC bias enhanced heteroepitaxial nucleation of (100) diamond on Ir(100)/a−sapphire by 915 MHz microwave plasma chemical vapor deposition","authors":"Yonhua Tzeng , Jian-Wei Tsai , I-Lun Chiu , Chia-Che Ho","doi":"10.1016/j.tsf.2025.140839","DOIUrl":"10.1016/j.tsf.2025.140839","url":null,"abstract":"<div><div>The desire for large−area heteroepitaxial nucleation of diamond has led to the exploration of larger plasma size than what is generated by 2.45 GHz microwave. We have demonstrated that 915 MHz microwave plasma nucleated (100) diamond on Ir (100)/<em>a</em>−sapphire by DC bias enhanced nucleation (BEN). BEN was carried out at −250 V to −290 V for 15–45 min by 3000 W microwave plasma chemical vapor deposition (MPCVD) in 10 % CH<sub>4</sub> diluted by hydrogen at the substrate temperature around 850 °C at the gas pressure of 4 kPa. Scanning electron microscopy (SEM) and 532 nm Raman spectroscopy were used to analyze the diamond nuclei. The result shows that biasing at −270 V for 30 min is optimal. <em>X</em>−ray diffraction (XRD) θ–2θ scans display only the diamond (400) reflection; rocking−curve and {111} pole−figure measurements confirm little mosaic spread and the absence of twins. Raman spectra data indicate moderate compressive stress and sp² carbon presumably from residual non−diamond carbon phases presiding on the iridium surface and between the heteroepitaxial diamond nuclei. These results establish the feasibility of DC bias enhanced heteroepitaxial nucleation of diamond by 915 MHz microwave plasma chemical vapor deposition (MPCVD) as a scalable route to the synthesis of single crystalline diamond wafers larger than the state−of−the−art.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140839"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145790500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Annealing temperature dependence of tensile cracking of indium tin oxide films on polycarbonate substrates","authors":"Jiali Zhou , Wenqiao Zhang , Yuandong Chen , Xianhua Huan , Youxiu Wei , Xuan Zhang , Xiaofeng Zhang , Yue Yan","doi":"10.1016/j.tsf.2025.140834","DOIUrl":"10.1016/j.tsf.2025.140834","url":null,"abstract":"<div><div>Indium tin oxide (In<sub>2</sub>O<sub>3</sub>:Sn, ITO) films deposited on rigid polycarbonate (PC) substrates exhibit susceptibility to microcracking under mechanical loading and thermal cycling conditions, compromising the mechanical durability of aerospace transparencies. To address this issue, this study systematically investigated the influence of annealing on tensile cracking behavior and crack resistance of 500 nm ITO films on PC substrates. ITO films were subjected to annealing temperatures of 80 °C to 130 °C for 1 h. In situ electrical resistance test under uniaxial tension was employed to characterize the conductive failure strain (<em>ε</em><sub>c</sub>), a key indicator of crack initiation resistance. The results revealed that <em>ε</em><sub>c</sub> demonstrate a non-monotonic relationship with increasing annealing temperature, with a peak <em>ε</em><sub>c</sub> of 1.01 ± 0.01 % achieved at 120 °C. This temperature-dependent behavior of <em>ε</em><sub>c</sub> is principally governed by the competing effects of thermal compressive stress (resulting from the coefficient of thermal expansion mismatch) and intrinsic tensile stress (associated with microstructural evolution). Furthermore, fracture toughness evaluation through the energy release rate method revealed maximum critical energy release rate values for 120 °C-annealed specimens, indicating optimal crack propagation resistance at this annealing condition.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140834"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-01-01Epub Date: 2025-11-24DOI: 10.1016/j.tsf.2025.140832
Shady Alwakeel , Nobl F. El Boarei , El-Said H. El-Mosallamy , Magdy A.M. Ibrahim
{"title":"Scalable palladium and tin-free pretreatment for direct nickel electroplating of acrylonitrile-butadiene-styrene plastics","authors":"Shady Alwakeel , Nobl F. El Boarei , El-Said H. El-Mosallamy , Magdy A.M. Ibrahim","doi":"10.1016/j.tsf.2025.140832","DOIUrl":"10.1016/j.tsf.2025.140832","url":null,"abstract":"<div><div>Metalized acrylonitrile-butadiene-styrene (ABS) plastic has gained popularity in the commercial market, particularly in the automotive and electronics industries. In this work, we replaced the ABS surface activation with Pd-Sn-free pretreatments, synthesizing a conductive nickel sulphide (NiS) seed thin film using chemical treatments on ABS. Instead of the usual sensitization and activation, the etched ABS plastic was immediately dipped into a metal sulfide solution, and consequently, no acceleration step was required. Hence, three steps can be used to obtain Ni plating on ABS (etching, NiS seeding, and plating). The Ni films' adhesion demonstrates strong adherence between the ABS substrate and Ni film (2.0 - 2.2 MPa). The film formed after electroplating under such conditions is crystalline and composed mainly of Ni in addition to a small amount of β-Ni(OH)₂, according to X-ray diffraction (XRD) results. EDS (energy-dispersive X-ray spectroscopy) and SEM (scanning electron microscopy) were used to characterize the coatings' composition and morphology. Developing a NiS seed layer through a simplified three-step process offers a cost-effective and scalable alternative with strong potential for metallization technologies of ABS plastics.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140832"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145610560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Scalable fabrication of lead-free halide perovskite film from electrodeposited SnO precursor film","authors":"Kimiya Kiyanpour , Sahel Gozalzadeh , Leila Jafari Foruzin , Farzad Nasirpouri","doi":"10.1016/j.tsf.2025.140841","DOIUrl":"10.1016/j.tsf.2025.140841","url":null,"abstract":"<div><div>The present study describes a two-step synthesis of methylammonium tin bromide (CH<sub>3</sub>NH<sub>3</sub>SnBr<sub>3</sub>) perovskite film. The process is based on (i) the electrodeposition of Sn precursor (SnO) onto TiO<sub>2</sub> nanotubes, followed by ii) direct chemical conversion of SnO to the perovskite. Several anodization methods, including one-step anodization, one-step anodization with ultrasonic post-treatment (UPT), and two-step anodization, were investigated for preparing the TiO<sub>2</sub> nanotubes on a Titanium (Ti) substrate. Among these methods, the one-step anodization with UPT yielded open-top, ordered TiO<sub>2</sub> nanotubes with an internal diameter of 69.15 nm, making them a promising photoanode. The impact of different electrodeposition techniques, including two and three electrode cells, on the structural, morphological, and compositional properties of electrodeposited Sn-based layers was also examined. Chronoamperometry in the 3-electrode set-up produced a single-phase SnO film exclusively at the nanotube openings. The final tin-based perovskite film, formed via chemical conversion of the SnO layer, exhibits a compact structure with a band gap of 2.0 eV, which is comparable to values reported for tin-based perovskites prepared by conventional methods.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140841"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145790604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Role of oxygen on functional properties of TiOxNy coating for polymer electrolyte membrane fuel cell’s bipolar plate","authors":"Clément Cambier , Marie-Alix Leroy , Benoit Ter-Ovanessian , Jules Galipaud , Matthieu Bugnet , Christophe Heau , Bernard Normand","doi":"10.1016/j.tsf.2025.140829","DOIUrl":"10.1016/j.tsf.2025.140829","url":null,"abstract":"<div><div>Titanium oxynitride (TiON) coatings were synthesized via reactive magnetron sputtering to functionalize the surface of metallic bipolar plates in polymer electrolyte membrane fuel cells (PEMFCs), with the dual objective of ensuring both durability and electrical conductivity. The incorporation of oxygen into titanium nitride (TiN) was identified as a critical factor in enhancing the chemical stability of the material, particularly at elevated potentials (>1.2 V/NHE), due to the greater stability of iono-covalent bonds—characterized by partial electron sharing and separation—compared to metallic bonds. Beyond influencing the chemical properties, oxygen addition also altered the coating morphology, leading to larger columnar structures and smoother, less reactive surfaces. <em>Ex-situ</em> potentiodynamic polarization and interfacial contact resistance (ICR) measurements were performed to determine the optimal oxygen content, identified as 5 at.%, which simultaneously maintains a low ICR (<10 mΩ·cm²) suitable for practical applications, while significantly improving corrosion resistance relative to pure TiN coatings. This comprehensive study highlights the intricate interplay between microstructural and chemical factors, providing valuable insights for the development of advanced coatings specifically designed for PEMFC applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140829"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2025-12-15Epub Date: 2025-11-08DOI: 10.1016/j.tsf.2025.140821
Ping-Che Lee , Mingeun Choi , Diego Contreras Mora , Kesong Wang , SeongUk Yun , Dohyun Go , Jit Dutta , Dipayan Pal , Satish Kumar , Andrew C. Kummel
{"title":"High-speed AlN film deposition via low-pressure bipolar High power impulsed magnetron sputter for enhanced thermal conductivity","authors":"Ping-Che Lee , Mingeun Choi , Diego Contreras Mora , Kesong Wang , SeongUk Yun , Dohyun Go , Jit Dutta , Dipayan Pal , Satish Kumar , Andrew C. Kummel","doi":"10.1016/j.tsf.2025.140821","DOIUrl":"10.1016/j.tsf.2025.140821","url":null,"abstract":"<div><div>Reactive high power impulse magnetron sputtering (R-HiPIMS) plus kick is a bipolar sputtering technique that enhances the ionization of sputtered atoms and allows precise control of ion energy by a positive kick voltage pulse at the end of negative pulse on the target side [1]. The energetic ions generated by R-HiPIMS enable the transition of film structure from amorphous to crystalline at even room temperature. In the present study, the stability of low-pressure HiPIMS (High power impulse magnetron sputtering) plus kick plasma has been investigated, with frequency identified as a crucial factor in maintaining the plasma at low Ar background pressure. For AlN deposition, the impacts of various parameters, including positive pulse width and positive voltage, have been examined. A record-high deposition rate of 60 nm/min for AlN was achieved, corresponding to a standardized rate of 0.18 nm/W*min; this is consistent with the low-pressure HiPIMS plus kick, which maintains the target in a partially nitrided state. For deposition at 120 °C, X-ray diffraction analysis revealed a monotonic decrease in the full width at half maximum of rocking curves as film thickness increased, consistent with Transmission Electron Microscopy imaging showing coherent grain boundaries even on thick films. Among the two low-pressure HiPIMS plus kick samples examined, the highest thermal conductivity was 159.9 W/m·K (+16.7 / -18.5 W/m·K) at a thickness of around 1.5 μm, exhibiting strong industrial potential by achieving a high deposition rate while maintaining high thermal conductivity, low roughness, and low deposition temperature.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140821"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145576945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2025-12-15Epub Date: 2025-11-13DOI: 10.1016/j.tsf.2025.140823
Yao Yao, Taiki Inoue, Yoshihiro Kobayashi
{"title":"CO2-assisted nucleation of twisted graphene on graphene/SiC templates","authors":"Yao Yao, Taiki Inoue, Yoshihiro Kobayashi","doi":"10.1016/j.tsf.2025.140823","DOIUrl":"10.1016/j.tsf.2025.140823","url":null,"abstract":"<div><div>In this study, we demonstrated controlled nucleation and growth of monolayer graphene on the terraces of a clean graphene/SiC (SiC-G) template using a chemical vapor deposition (CVD)-based method incorporating CO<sub>2</sub>-assisted etching. To this end, a sequential thermal process that integrates SiC-G growth, CO<sub>2</sub> etching, and CVD graphene (CVD-G) growth was employed, all performed without air exposure. Raman spectroscopy, atomic force microscopy, and scanning electron microscopy confirmed that temperature-controlled CO<sub>2</sub> etching had a direct influence on the nucleation behavior of CVD-G. To elucidate the link between etching and nucleation, detailed examinations of the surface structure were conducted on pristine, CO<sub>2</sub>-treated, and CVD-performed SiC-G templates. The results indicated an unexpected restoration of the etched SiC-G surface during CVD-G growth. This restoration led to the formation of active sites, namely structural defects that serve as essential nucleation centers for CVD-G. When properly controlled, the restoration yielded isolated active sites that promoted single-site nucleation and monolayer growth, a key prerequisite for high-quality graphene synthesis. By contrast, insufficient restoration resulted in multiple active sites, thereby leading to undesirable multiple nucleation. These findings highlight the critical balance between etching-induced activation and surface restoration in achieving controlled nucleation of graphene. This work offers a pathway to synthesizing twisted graphene structures with controlled nucleation sites.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140823"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145576996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2025-12-15Epub Date: 2025-11-13DOI: 10.1016/j.tsf.2025.140824
Jing Cheng , Yuhang Dai , Hai Yan , Zhenghao Li , Yubo Liu , Xiangde Lin
{"title":"Superhydrophobic layer-by-layer assembled coating modified mg alloys for enhanced corrosion protection","authors":"Jing Cheng , Yuhang Dai , Hai Yan , Zhenghao Li , Yubo Liu , Xiangde Lin","doi":"10.1016/j.tsf.2025.140824","DOIUrl":"10.1016/j.tsf.2025.140824","url":null,"abstract":"<div><div>Magnesium alloys' critical corrosion vulnerability impedes their biomedical and industrial deployment, demanding eco-compatible protection strategies. A novel superhydrophobic coating was fabricated on a Mg alloy surface by combining hydrothermal processing with a hydrogen-bond-driven, layer-by-layer self-assembly technique using branched polyethylenimine (BPEI), urushiol and hydrophobic SiO<sub>2</sub> nanoparticles, designated as Mg<sub>HT</sub>(BPEI/U)<sub>10</sub>-(BPEI/U-SiO<sub>2</sub>)<sub>10</sub>. This surface exhibits a water contact angle of 154.9 ± 1.3° and a rolling-off angle of 4.5°, endowing it with excellent water-repellent and self-cleaning properties. It maintains its superhydrophobicity for over 30 days. Electrochemical measurements further demonstrate outstanding corrosion resistance, with the Mg<sub>HT</sub>(BPEI/U)<sub>10</sub>-(BPEI/U-SiO<sub>2</sub>)<sub>10</sub> coating showing a corrosion current density (<em>I<sub>corr</sub></em>) of 2.4 × 10<sup>−8</sup> A·cm<sup>−2</sup>—four orders of magnitude lower than bare magnesium—a corrosion potential (<em>E<sub>corr</sub></em>) of −1.2 V, and a charge transfer resistance (<em>R<sub>ct</sub></em>) of 123550 Ω·cm², which is three orders of magnitude higher than the uncoated alloy. This technology offers a sustainable solution for magnesium-based implants.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140824"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2025-12-15Epub Date: 2025-11-19DOI: 10.1016/j.tsf.2025.140827
Jiaheng Xi , Song Hu , Xinwei Wang , Yidan Fan , Xiaoqi Geng , Fan Zhang , Tingting Yao , Chunlin Chen
{"title":"Effect of deposition temperature on microstructure and electrical properties of MnO thin films","authors":"Jiaheng Xi , Song Hu , Xinwei Wang , Yidan Fan , Xiaoqi Geng , Fan Zhang , Tingting Yao , Chunlin Chen","doi":"10.1016/j.tsf.2025.140827","DOIUrl":"10.1016/j.tsf.2025.140827","url":null,"abstract":"<div><div>As a rock salt structured metal oxide with unique electron spin arrangement and magnetic properties, manganese monoxide (MnO) shows promising applications in energy storage, catalysis and spintronic devices and has attracted great attention. However, the high oxidability and high resistance limit its applications. In this study, pure MnO thin films were successfully grown on SrTiO<sub>3</sub> substrates using pulsed laser deposition at varying temperatures, including 750 °C, 850 °C, 950 °C, and 1050 °C. The effects of deposition temperature on the microstructure and optoelectronic properties were investigated using X-ray diffraction, atomic force microscopy, transmission electron microscopy, ultraviolet-visible diffuse reflectance spectroscopy, and Hall effect measurement system. The results reveal that the deposition temperature significantly influences the crystallinity, grain size, surface morphology, and optoelectronic properties of MnO thin films. Transmission electron microscopy analysis confirmed the epitaxial growth of MnO on SrTiO<sub>3</sub> and revealed the influence of deposition temperature on the film's crystallographic orientation and interface characteristics. The bandgap values, obtained from Tauc plot analysis, ranged from 3.16 eV to 3.21 eV. This work provides insights into the temperature-dependent growth of MnO thin films and strain-field regulation on conductivity, laying the foundation for further material design and application development in high-performance electronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"832 ","pages":"Article 140827"},"PeriodicalIF":2.0,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}