Thin Solid Films最新文献_第8页

Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis 反应溅射制备抗反射Ta2O5和TaOxNy薄膜的多技术表征：耦合x射线光电子能谱、扫描/透射电子显微镜和离子束分析

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-14 DOI: 10.1016/j.tsf.2025.140725

Florian Chabanais , Babacar Diallo , Aissatou Diop , Angélique Bousquet , Thierry Sauvage , Béatrice Plujat , Sébastien Quoizola , Audrey Soum-Glaude , Laurent Thomas , Éric Tomasella , Antoine Goullet , Mireille Richard-Plouet

{"title":"Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis","authors":"Florian Chabanais , Babacar Diallo , Aissatou Diop , Angélique Bousquet , Thierry Sauvage , Béatrice Plujat , Sébastien Quoizola , Audrey Soum-Glaude , Laurent Thomas , Éric Tomasella , Antoine Goullet , Mireille Richard-Plouet","doi":"10.1016/j.tsf.2025.140725","DOIUrl":"10.1016/j.tsf.2025.140725","url":null,"abstract":"<div><div>TaO<sub>x</sub>N<sub>y</sub> thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N<sub>2</sub>/O<sub>2</sub> plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 °C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta<sub>2</sub>O<sub>5</sub>) to oxynitride and nitride environments (TaO<sub>x</sub>N<sub>y</sub> and Ta<sub>3</sub>N<sub>5</sub>). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140725"},"PeriodicalIF":2.0,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical solutions for layer and substrate parameters determination using amplitude reflection coefficients 用振幅反射系数确定层和衬底参数的解析解

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-13 DOI: 10.1016/j.tsf.2025.140722

Stoyan C. Russev, Gichka G. Tsutsumanova, Velizara Ts. Tsanova

引用次数: 0

The influence of thermal annealing on microstructure and resistivity of Pt films with different thickness 热处理对不同厚度Pt薄膜微观结构和电阻率的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-13 DOI: 10.1016/j.tsf.2025.140723

Lingcong Zhang , Wei Chen , Li Qiao , Qifeng Cui , Zhiqing Qiang , Peng Wang

{"title":"The influence of thermal annealing on microstructure and resistivity of Pt films with different thickness","authors":"Lingcong Zhang , Wei Chen , Li Qiao , Qifeng Cui , Zhiqing Qiang , Peng Wang","doi":"10.1016/j.tsf.2025.140723","DOIUrl":"10.1016/j.tsf.2025.140723","url":null,"abstract":"<div><div>The thermal stability of platinum film dominates the performance when the film electrodes operate under extreme conditions, such as high temperature. In this study, Pt films with thicknesses of 50, 200, and 400 nm were deposited by magnetron sputtering and annealed in different conditions to investigate the microstructure and resistivity changes. The results show that thicker films exhibit superior dewetting resistance. For Pt films with 50 nm thickness, bumps and pits appear at the surface after vacuum annealing at 773 K, while the bumps grow and the pits transform into voids at 973 K. These defects further expand and separate the films into island-like structures at 1173 K. Voids appear at the surface of Pt-200 after vacuum annealing at 1173 K and atmospheric annealing at 1073 K, which appear at the surface of Pt-400 after vacuum and atmospheric annealing at 1173 K, and island-like structures are observed at 1273 K. Pt films exhibit superior thermal stability in atmospheric environment. All films develop numerous isolated island-like structures at surfaces after vacuum annealing at 1273 K, while only Pt-50 exhibits a surface with a serpentine structure after atmospheric annealing at 1273 K. Below 873 K, the film resistivity decreases with the temperature increasing, primarily driven by recrystallization-mediated elimination of lattice defects such as grain boundaries, dislocations, and vacancies. Above 873 K, the film resistivity increases with the temperature increasing, because dewetting damages the film's structural integrity. These findings provide key design guidelines for Pt-based components operating in harsh working environment to explore the method to improve the high temperature stability of Pt films, and optimize the magnetron sputtering process and guide the application in temperature sensitive devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140723"},"PeriodicalIF":2.0,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of the parameters of the reactive dual magnetron sputtering process on the properties of the ZrO2-Y2O3 electrolyte 反应性双磁控溅射工艺参数对ZrO2-Y2O3电解质性能的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-11 DOI: 10.1016/j.tsf.2025.140720

Andrey A. Solovyev , Anna V. Shipilova , Sergey V. Rabotkin , Vladimir O. Oskirko

{"title":"Influence of the parameters of the reactive dual magnetron sputtering process on the properties of the ZrO2-Y2O3 electrolyte","authors":"Andrey A. Solovyev , Anna V. Shipilova , Sergey V. Rabotkin , Vladimir O. Oskirko","doi":"10.1016/j.tsf.2025.140720","DOIUrl":"10.1016/j.tsf.2025.140720","url":null,"abstract":"<div><div>Yttria-stabilized zirconia (YSZ) thin films, used as electrolytes in solid oxide fuel cells (SOFCs), have been deposited by reactive dual magnetron sputtering from single metal Zr and Y targets. Deposition was performed in poisoned mode using a high-power impulse magnetron sputtering power supply. The Y<sub>2</sub>O<sub>3</sub> content in YSZ films was varied by changing the Y magnetron power. YSZ films with a Y<sub>2</sub>O<sub>3</sub> content close to 8 mol % were obtained at Zr and Y magnetron powers of 1000 and 300 W, respectively, and a working pressure of 0.3 Pa. Anode-supported single cells with 5 µm thick YSZ electrolyte and La<sub>0.6</sub>Sr<sub>0.4</sub>CoO<sub>3</sub> cathode were fabricated and tested. An open circuit voltage of 1.05 V and a maximum power density of 868 mW/cm<sup>2</sup> were achieved at 800 °C using H<sub>2</sub> as fuel and air as oxidant. The structural and electrochemical characteristics of a single SOFCs with YSZ electrolyte deposited by dual magnetron sputtering of single metal Zr and Y targets and also Zr-Y alloy targets are compared. It has been found that the power supply parameters of the magnetron discharge, in particular the peak power density, affect the formation of residual stresses in the deposited films, leading to the formation of blister-like defects on the surface. This problem can be solved by reducing the peak power density of the discharge.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140720"},"PeriodicalIF":2.0,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144296800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced structural, optical, electrical, photocatalytic, and scavengers test of Er-doped ZnO thin films via dip coating for optoelectronic and environmental applications under UV and sunlight exposure 在紫外和日光照射下，通过浸渍涂层增强er掺杂ZnO薄膜的结构，光学，电学，光催化和清除剂测试

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-09 DOI: 10.1016/j.tsf.2025.140718

Romaissa Allouche , Sabrina Roguai , Abdelkader Djelloul , Najoua Turki Kamoun

{"title":"Enhanced structural, optical, electrical, photocatalytic, and scavengers test of Er-doped ZnO thin films via dip coating for optoelectronic and environmental applications under UV and sunlight exposure","authors":"Romaissa Allouche , Sabrina Roguai , Abdelkader Djelloul , Najoua Turki Kamoun","doi":"10.1016/j.tsf.2025.140718","DOIUrl":"10.1016/j.tsf.2025.140718","url":null,"abstract":"<div><div>This study explores the impact of erbium (Er) doping on the structural, optical, electrical, and photocatalytic properties of ZnO thin films synthesized via the sol-gel dip-coating method. X-ray diffraction (XRD) confirms a hexagonal wurtzite structure, with peak shifts indicating strain induced by Er incorporation. Notably, a secondary Er-related phase emerges at higher doping levels (10 % and 15 %), suggesting the solubility limit of Er in the ZnO matrix. Scanning electron microscopy (SEM) reveals that moderate doping (2–5 %) improves film uniformity, while excessive Er content (10 % and above) leads to porosity and grain boundary defects. Photoluminescence (PL) spectra show enhanced near-band-edge (NBE) emission (405–416 nm) with increasing Er content, peaking at 15 %, while defect-related emissions (486 nm and 528 nm) indicate changes in charge trapping mechanisms. Electrical analysis via impedance spectroscopy demonstrates improved conductivity, with a decrease in parallel resistance (Rp) up to 10 % Er, followed by an increase at 15 % due to excess defect formation. Photocatalytic experiments using methylene blue (MB) under UV and sunlight irradiation reveal enhanced degradation efficiency, with 2 % Er-doped ZnO performing best under UV light and 10 % Er showing optimal performance under sunlight. Kinetic analysis follows a pseudo-first-order reaction model, Scavenger experiments confirm that hydroxyl radicals (•OH) playing a dominant role under UV irradiation. These results highlight the critical role of Er solubility in tuning ZnO’s properties, making Er-doped ZnO a promising material for optoelectronic applications and environmental remediation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140718"},"PeriodicalIF":2.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-efficiency low-temperature active screen plasma nitriding by bias voltage optimization of Ti-6Al-4V titanium alloy Ti-6Al-4V钛合金偏压优化高效低温有源屏等离子体渗氮

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-08 DOI: 10.1016/j.tsf.2025.140717

Tao Lai , Hong Gao , Yan Gao

{"title":"High-efficiency low-temperature active screen plasma nitriding by bias voltage optimization of Ti-6Al-4V titanium alloy","authors":"Tao Lai , Hong Gao , Yan Gao","doi":"10.1016/j.tsf.2025.140717","DOIUrl":"10.1016/j.tsf.2025.140717","url":null,"abstract":"<div><div>Nitriding at low temperatures can prevent the deterioration of mechanical properties by grain growth of metal substrate. However, the formation of a sufficiently thick nitride layer under these conditions remains challenging because of the inherently slow diffusion kinetics. This study presents an efficient active screen plasma nitriding (ASPN) technique applied to a Ti-6Al-4V titanium alloy at low temperatures of 500–600 °C without requiring any supplementary deformation processes. The effects of different bias voltages (400 V and 800 V) on the nitriding behavior within the temperature range of 500–600 °C were comprehensively assessed. A compound layer exceeding 6 μm was formed on the surface of the Ti-6Al-4V titanium alloy after 20 h of nitriding at a low temperature of 600 °C, significantly outperforming conventional plasma nitriding techniques. The optimization of bias voltage greatly enhanced the efficiency of the ASPN process. The study also investigated how the bias voltage influences the ASPN process. Appropriate bias voltages facilitated the migration of nitriding species toward the sample surface and promoted nitride layer growth. However, excessively high bias voltages intensified the ion bombardment, increasing the etching effect on the TiN deposition layer. An optimal bias voltage of 400 V best balanced the deposition and sputter-etching of nitride species during the ASPN treatment of the Ti-6Al-4V titanium alloy.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140717"},"PeriodicalIF":2.0,"publicationDate":"2025-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced mechanical and tribological performance of W/B4C periodic nano-multilayer coating by optimizing W deposition power 通过优化W沉积功率提高W/B4C周期性纳米多层涂层的力学和摩擦学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-07 DOI: 10.1016/j.tsf.2025.140716

Mingfeng Li , Yuzhen Liu , Dae-Eun Kim , Oleksiy V. Penkov

引用次数: 0

Electrode dependent asymmetric memory switching behaviour of Cu2FeSnS4 based devices 基于Cu2FeSnS4的器件电极依赖非对称记忆开关行为

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-07 DOI: 10.1016/j.tsf.2025.140715

N. Aravind, Neju Mathew Philip, M. C. Santhosh Kumar

{"title":"Electrode dependent asymmetric memory switching behaviour of Cu2FeSnS4 based devices","authors":"N. Aravind, Neju Mathew Philip, M. C. Santhosh Kumar","doi":"10.1016/j.tsf.2025.140715","DOIUrl":"10.1016/j.tsf.2025.140715","url":null,"abstract":"<div><div>Cu<sub>2</sub>FeSnS<sub>4</sub> (CFTS) is a promising and relatively lesser explored materials in the family of copper-based chalcogenides. The material has earth-abundant constituent elements, which make it cheap, while also being non-toxic in nature. This work intends to explore the memory switching properties of CFTS based thin film devices coated on Fluorine doped tin oxide (FTO) substrates with different top electrodes – Silver (Ag) and Aluminium (Al). We report a comparative study on the performances of <FTO/CFTS/Ag> and <FTO/CFTS/Al> devices. CFTS thin films were deposited onto FTO coated glass substrates using vacuum spray pyrolysis at 375°C. X-ray diffraction analysis confirmed the formation of tetragonal kesterite structure of the material. Field Emission Scanning Electron Microscopy with Energy Dispersive X-ray analysis was used to investigate the morphology and elemental composition. Current (I)- voltage (V) measurements show that the devices exhibit asymmetric memory switching characteristics, with substantially high ON/OFF ratio of 272 for <FTO/CFTS/Ag> device and 115 for <FTO/CFTS/Al> device with good endurance over a range of 100 cycles. The switching mechanisms at different voltage ranges are analysed from the double logarithmic I-V graphs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140715"},"PeriodicalIF":2.0,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144254943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of atomic-layer-deposition sequence on the composition of indium-zinc-tin oxide thin films and its effect on thin-film transistor characteristics 原子层-沉积顺序对氧化铟锌锡薄膜组成的影响及其对薄膜晶体管特性的影响

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-07 DOI: 10.1016/j.tsf.2025.140714

Yurim Jeong, Chang-Yun Na, Sung Min Cho

{"title":"Effect of atomic-layer-deposition sequence on the composition of indium-zinc-tin oxide thin films and its effect on thin-film transistor characteristics","authors":"Yurim Jeong, Chang-Yun Na, Sung Min Cho","doi":"10.1016/j.tsf.2025.140714","DOIUrl":"10.1016/j.tsf.2025.140714","url":null,"abstract":"<div><div>Indium-zinc-tin oxide (IZTO) thin films were deposited via atomic layer deposition (ALD) using In and Sn precursors that have not been reported yet. The temperature ranges in which ALD of In<sub>2</sub>O<sub>3</sub>, ZnO, and SnO<sub>2</sub> thin films was possible were determined, and the IZTO thin films were deposited at 170°C, which all ranges overlap. The In<sub>2</sub>O<sub>3</sub>, ZnO, and SnO<sub>2</sub> thin films deposited by ALD showed a composition that was almost stoichiometric. The effect of the deposition order of three metal oxides on the composition of IZTO was investigated. It was found that the deposition of ZnO was inhibited when ZnO ALD was performed immediately after SnO<sub>2</sub> ALD. Therefore, the preferred ALD sequence for IZTO thin films is SnO<sub>2</sub>, In<sub>2</sub>O<sub>3</sub>, and ZnO. In one supercycle for IZTO ALD, the number of subcycles of In<sub>2</sub>O<sub>3</sub> was fixed to 1 and the number of subcycles of ZnO and SnO<sub>2</sub> was varied, and the changes in the electrical properties of IZTO were observed. Two IZTO compositions exhibiting distinctly different electrical characteristics were selected and applied to the upper and lower channels of a dual-channel IZTO thin-film transistor (TFT). By controlling the position and thickness of two IZTO channel layers with different characteristics, it was shown that a TFT with constructively combined characteristics is possible by collecting only the excellent electrical characteristics of each IZTO channel layer.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140714"},"PeriodicalIF":2.0,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of ambient oxygen pressure on the structural and optical properties of NiO thin films deposited using pulsed laser deposition and the performance of self-driven p-NiO/n-Si as UV–Visible-NIR photodetectors 环境氧压对脉冲激光沉积NiO薄膜结构和光学性能的影响以及自驱动p-NiO/n-Si作为紫外-可见-近红外光电探测器的性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2025-06-05 DOI: 10.1016/j.tsf.2025.140703

Savita Chaoudhary , A.R. Midhun , Brahim Aïssa , Vipul Rastogi , Anirban Mitra

{"title":"Impact of ambient oxygen pressure on the structural and optical properties of NiO thin films deposited using pulsed laser deposition and the performance of self-driven p-NiO/n-Si as UV–Visible-NIR photodetectors","authors":"Savita Chaoudhary , A.R. Midhun , Brahim Aïssa , Vipul Rastogi , Anirban Mitra","doi":"10.1016/j.tsf.2025.140703","DOIUrl":"10.1016/j.tsf.2025.140703","url":null,"abstract":"<div><div>The stoichiometry of a metal oxide thin film has excellent potential to modify the material’ s physical properties and hence, the device’ s performance. In this paper, an in-depth investigation has been conducted to understand the impact of ambient oxygen pressure (AOP) during Pulsed laser deposition on the structural and optical properties of NiO thin films and its consequences on the self-driven UV–Visible-NIR photodetection properties of the NiO/Si heterostructure. X-ray photoelectron spectroscopy results confirm that the Ni vacancy increases with the increase of AOP. Furthermore, a comparative study of spectroscopic ellipsometry and first-principles density functional theory + U calculations is conducted to better understand the impact of different AOP conditions. Our experimental and theoretical results show that while nickel vacancy is an efficient acceptor in NiO, it also reduces transparency in the visible region of the material. In addition, the effects of AOP on the NiO/Si heterojunction-based photodetector’s performance were studied in the broad range from UV to NIR. The stability of the broadband self-powered photodetectors are ensured by periodically switching the photo-illumination at regular time intervals. After tuning the AOP during growth, a highly stable and fast-switching self-biased p-NiO/n-Si photodiode is achieved with the highest responsivity of 32 mA/W upon exposure to 455 nm wavelength.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"824 ","pages":"Article 140703"},"PeriodicalIF":2.0,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144241781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0