Electrode dependent asymmetric memory switching behaviour of Cu2FeSnS4 based devices

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-06-07 DOI:10.1016/j.tsf.2025.140715

N. Aravind, Neju Mathew Philip, M. C. Santhosh Kumar

{"title":"Electrode dependent asymmetric memory switching behaviour of Cu2FeSnS4 based devices","authors":"N. Aravind, Neju Mathew Philip, M. C. Santhosh Kumar","doi":"10.1016/j.tsf.2025.140715","DOIUrl":null,"url":null,"abstract":"<div><div>Cu<sub>2</sub>FeSnS<sub>4</sub> (CFTS) is a promising and relatively lesser explored materials in the family of copper-based chalcogenides. The material has earth-abundant constituent elements, which make it cheap, while also being non-toxic in nature. This work intends to explore the memory switching properties of CFTS based thin film devices coated on Fluorine doped tin oxide (FTO) substrates with different top electrodes – Silver (Ag) and Aluminium (Al). We report a comparative study on the performances of <FTO/CFTS/Ag> and <FTO/CFTS/Al> devices. CFTS thin films were deposited onto FTO coated glass substrates using vacuum spray pyrolysis at 375°C. X-ray diffraction analysis confirmed the formation of tetragonal kesterite structure of the material. Field Emission Scanning Electron Microscopy with Energy Dispersive X-ray analysis was used to investigate the morphology and elemental composition. Current (I)- voltage (V) measurements show that the devices exhibit asymmetric memory switching characteristics, with substantially high ON/OFF ratio of 272 for <FTO/CFTS/Ag> device and 115 for <FTO/CFTS/Al> device with good endurance over a range of 100 cycles. The switching mechanisms at different voltage ranges are analysed from the double logarithmic I-V graphs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140715"},"PeriodicalIF":2.0000,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025001154","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

Abstract

Cu₂FeSnS₄ (CFTS) is a promising and relatively lesser explored materials in the family of copper-based chalcogenides. The material has earth-abundant constituent elements, which make it cheap, while also being non-toxic in nature. This work intends to explore the memory switching properties of CFTS based thin film devices coated on Fluorine doped tin oxide (FTO) substrates with different top electrodes – Silver (Ag) and Aluminium (Al). We report a comparative study on the performances of <FTO/CFTS/Ag> and <FTO/CFTS/Al> devices. CFTS thin films were deposited onto FTO coated glass substrates using vacuum spray pyrolysis at 375°C. X-ray diffraction analysis confirmed the formation of tetragonal kesterite structure of the material. Field Emission Scanning Electron Microscopy with Energy Dispersive X-ray analysis was used to investigate the morphology and elemental composition. Current (I)- voltage (V) measurements show that the devices exhibit asymmetric memory switching characteristics, with substantially high ON/OFF ratio of 272 for <FTO/CFTS/Ag> device and 115 for <FTO/CFTS/Al> device with good endurance over a range of 100 cycles. The switching mechanisms at different voltage ranges are analysed from the double logarithmic I-V graphs.

查看原文本刊更多论文

基于Cu2FeSnS4的器件电极依赖非对称记忆开关行为

Cu2FeSnS4 （CFTS）是铜基硫属化合物家族中一种很有前途但开发相对较少的材料。这种材料具有丰富的地球组成元素，这使得它便宜，同时在自然界中也是无毒的。本研究旨在探讨在不同顶电极-银（Ag）和铝（Al）的氟掺杂氧化锡（FTO）衬底上涂覆CFTS薄膜器件的记忆开关性能。本文报道了FTO/CFTS/Ag>；和& lt; FTO /钢管/ Al>设备。在375°C的真空喷雾热解下，将CFTS薄膜沉积在FTO镀膜玻璃基板上。x射线衍射分析证实了该材料形成的四方角石结构。采用场发射扫描电子显微镜和能量色散x射线分析对其形貌和元素组成进行了研究。电流(I)-电压(V)测量表明，器件具有非对称记忆开关特性，FTO/CFTS/Ag>的ON/OFF比高达272；FTO/CFTS/Al>；在100次循环的范围内具有良好的耐久性。从双对数I-V图分析了不同电压范围下的开关机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.