Thin Solid Films最新文献

{"title":"Preface to a Special Issue E-MRS 2023 Fall Meeting, Symposium A, Integration of advanced materials on silicon, from classical to neuromorphic and quantum applications","authors":"Abderraouf Boucherif , Andriy Hikavyy , Jacopo Frigerio , Katarzyna Hnida-Gut","doi":"10.1016/j.tsf.2024.140539","DOIUrl":"10.1016/j.tsf.2024.140539","url":null,"abstract":"","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140539"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects and modulation mechanism of crystal structure on residual stress of Cu films used for metallization","authors":"Wenju Li ,&nbsp;Shu Xiao ,&nbsp;Xiaobo Zhang ,&nbsp;Xinyu Meng ,&nbsp;Yixiong Gao ,&nbsp;Shuyu Fan ,&nbsp;Tijun Li ,&nbsp;Paul K. Chu","doi":"10.1016/j.tsf.2024.140556","DOIUrl":"10.1016/j.tsf.2024.140556","url":null,"abstract":"<div><div>Deformation cracking and delamination arising from residual stress are the main challenges for metallization in large-scale integrated circuits. Herein, an ultra-low residual stress Cu film is prepared on amorphous SiO₂ by mixed power magnetron sputtering. Compared to conventional Cu films, the residual stress in the film decreases by 1434 times. The nano multi-layer structure produces lower stress and deformation as well as better reliability. The multi-layer Ti underlayer also reduces the residual stress and promotes the low-defect growth of Cu. The lower surface roughness, smaller dislocation density, predominant grain orientations of 〈111〉 and 〈001〉, and more substructures are beneficial to the reduction of residual stress. In addition, interlayer stress cancellation can be achieved by changing the number of 〈111〉 grains. The research on grain growth at the interface of nano multi-layer films reveals an effective means to fabricate films with low residual stress for metallization in integrated circuits.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140556"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication and characterization of zinc oxide nanorods-modified electrodes using nanoimprint lithography for electrochemical sensing of heavy metal ions","authors":"Nongmaithem Herojit Singh ,&nbsp;Rakesh Singh Moirangthem ,&nbsp;Shagolsem Romeo Meitei ,&nbsp;N. Mohondas Singh","doi":"10.1016/j.tsf.2024.140550","DOIUrl":"10.1016/j.tsf.2024.140550","url":null,"abstract":"<div><div>This paper uses the nanoimprint lithography (NIL) technique to present the fabrication and characterization of Zinc oxide nanorods (ZnONRs)-modified electrodes. Characterization of the resulting electrode involved X–ray diffraction, Field Emission Scanning Electron Microscope and Transmission electron microscopy. The electrode surface was modified with ZnONRs using the NIL technique to increase the sensitivity of the electrochemical sensor for detecting small quantities of heavy metal ions, which remain a major concern due to their toxicity and environmental harm. Electrochemical measurements and sensing performance evaluations were conducted to analyze the electrochemical properties and sensitivity of the ZnONRs - modified electrodes. The results demonstrated increased sensitivity towards cadmium ions present in aqueous solutions, and the limit of detection is found to be 20.88 ± 0.9 µM.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140550"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of anchoring groups on the formation of self-assembled monolayers on Au(111) from cyclohexanethiol and cyclohexyl thiocyanate","authors":"Jun Hyeong Lee ,&nbsp;Jin Wook Han ,&nbsp;Gaeun Lee ,&nbsp;Seulki Han ,&nbsp;Haeri Kim ,&nbsp;Dongjin Seo ,&nbsp;Riko Kaizu ,&nbsp;Glenn Villena Latag ,&nbsp;Tomohiro Hayashi ,&nbsp;Jaegeun Noh","doi":"10.1016/j.tsf.2024.140560","DOIUrl":"10.1016/j.tsf.2024.140560","url":null,"abstract":"<div><div>Surface structures, binding conditions, and electrochemical behaviors of self-assembled monolayers (SAMs) formed by adsorption of cyclohexanethiol (CHT, C₆H₁₀-SH) and cyclohexyl thiocyanate (CHTC, C₆H₁₀-SCN) on Au(111) were characterized to understand the effect of anchoring groups on the formation of SAMs using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). STM observations showed that CHT SAMs had tri-directional small-ordered domains, whereas CHTC SAMs were composed of unidirectional long-range-ordered domains and disordered domains. CHT and CHTC SAMs had identical molecular arrangements with zig-zag-ordered molecular rows, unlike the SAMs of alkanethiols and alkyl thiocyanates, which have different packing structures. XPS measurements showed that CHTC SAMs on Au(111) can be formed via chemical reactions of sulfur atoms after cleavage of S-CN bonds, and the surface coverages of CHT and CHTC SAMs were similar. Moreover, the N 1s peak intensity of CHTC SAMs is very weak, which means that the CN species generated during the adsorption of CHTC molecules on Au(111) are easily removed from the surface. CV measurements revealed the reductive desorption peaks of CHT and CHTC SAMs at similar potentials of −0.980 and −0.988 V, respectively, suggesting that the electrochemical stabilities of CHT and CHTC SAMs were almost identical to each other. Overall, we clearly demonstrated that, unlike alkyl thiocyanate SAMs, alicyclic thiocyanates could be used as an excellent alternative to thiol analogues with the same alicyclic backbone for SAM preparation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140560"},"PeriodicalIF":2.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma-enhanced atomic layer deposition of N-doped GaO thin film for bandgap modulation","authors":"Longxing Su ,&nbsp;Hongping Ma","doi":"10.1016/j.tsf.2024.140561","DOIUrl":"10.1016/j.tsf.2024.140561","url":null,"abstract":"<div><div>Bandgap modulation is extremely important for optoelectronic and electronic devices. However, compare with Ⅱ-Ⅵ and Ⅲ-Ⅴ compound semiconductors, the ultrawide bandgap semiconductor Ga₂O₃ (Ⅲ-Ⅵ) faces a tough obstacle of bandgap modulation. Herein, we have prepared a N-doped GaO thin film on Si substrate through a plasma-enhanced atomic layer deposition (PEALD) method. The as-deposited GaO:N layer exhibits amorphous nature with thickness of ∼8.4 nm. The bandgap of the as-deposited GaO:N layer is adjusted to 4.31 eV, which is ∼0.49 eV smaller than the bandgap of pure Ga₂O₃. In addition, the photoluminescence (PL) spectra from five randomly selected points of the film layer indicate the uniformly distribution of N concentration. Subsequently, the energy band diagram of the as-deposited GaO:N layer is determined by the X-ray photoelectron spectroscopy (XPS), in which the Fermi energy level locates ∼0.81 eV below the conduction band minimum (CBM) and ∼3.5 eV above the valence band maximum (VBM). Our study raises a promising strategy for modulating the bandgap of Ga₂O₃, which provides potential applications in spectrum adjustable photodetector and high electron mobility transistor.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140561"},"PeriodicalIF":2.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application","authors":"Nishant Saurabh ,&nbsp;Shubham Patil ,&nbsp;Paritosh Meihar ,&nbsp;Sandeep Kumar ,&nbsp;Anand Sharma ,&nbsp;BhaveshKumar Kamaliya ,&nbsp;Rakesh G. Mote ,&nbsp;Sandip Lashkare ,&nbsp;Apurba Laha ,&nbsp;Veeresh Deshpande ,&nbsp;Udayan Ganguly","doi":"10.1016/j.tsf.2024.140559","DOIUrl":"10.1016/j.tsf.2024.140559","url":null,"abstract":"<div><div>In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd₂O₃ film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (&gt;900 °C to 1050 °C), Si out-diffusion in Gd₂O₃ film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm². Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (D_it) with a range of time constants. After the forming gas annealing, a significant reduction in D_it is observed. The low leakage current density, low D_it and high crystallinity make Gd₂O₃ a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140559"},"PeriodicalIF":2.0,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping","authors":"Manu Srivathsa,&nbsp;BV Rajendra","doi":"10.1016/j.tsf.2024.140555","DOIUrl":"10.1016/j.tsf.2024.140555","url":null,"abstract":"<div><div>The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm³⁺) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn_1-xSm_xO (<em>x</em> = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn_0.93Sm_0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm³⁺ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm³⁺ ions. The photoluminescence spectra of Zn_0.93Sm_0.07O films showed maximum near band edge emission and minimum defects. The Zn_0.93Sm_0.07O films showed higher carrier concentration of 1 × 10¹⁷ cm⁻³, mobility 32 cm²/Vs and lower resistivity of 1 × 10² Ω cm due to improved film quality. The Zn_0.93Sm_0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10⁻⁶ A and 10⁻⁴ A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn_0.93Sm_0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn_0.93Sm_0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140555"},"PeriodicalIF":2.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142573555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of inserting a-C layers on anticorrosion behavior of Ni-NiCr-NiCrAlSi composite coating on copper through magnetron sputtering for marine applications","authors":"Hao Du ,&nbsp;Jiayuan Wen ,&nbsp;Guihong Song ,&nbsp;Hao Wu ,&nbsp;Ji-an Feng ,&nbsp;Yan Huang ,&nbsp;Yujiang Wang ,&nbsp;Yansheng Yin","doi":"10.1016/j.tsf.2024.140558","DOIUrl":"10.1016/j.tsf.2024.140558","url":null,"abstract":"<div><div>Amorphous carbon film by magnetron sputtering was inserted in the NiCrAlSi layer to form NiCrAlSi/a-C multilayer with modulation period in a range of 131.6 nm to 240.2 nm in the Ni-NiCr-NiCrAlSi coating for a further improvement to copper on corrosion resistance aiming at application as a heat exchanger for mariculture in sea water. After structure characterization, the corrosion behavior of the samples with variant modulation periods of the NiCrAlSi/a-C multilayer keeping the same total thickness(1 μm) was compared using potentiodynamic polarization and electrochemical impedance spectroscopy. The polarization curves show that the corrosion potentials of the coatings with modulation periods of 240.2 nm, 198.4 nm, 158.4 nm and bilayer number 4, 5, 6 for NiCrAlSi/a-C layer are more negative compared to that with modulation period of 131.6 nm and bilayer number 7, which indicates that the smallest modulation period results in the highest corrosion resistance. The amorphous a-C sublayer in the multilayer coatings plays an active role in the improvement, for an introduction of the more interfaces between the NiCrAlSi and the a-C sublayers, as well as the compact structure and the chemical inertness to sea water (Cl⁻). In addition, the NiCrAlSi sublayer can be regarded as an interlayer to release stress in both the a-C sublayer and the NiCrAlSi sublayer, mainly from corrosion products, which also plays an important role for the improved corrosion resistance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140558"},"PeriodicalIF":2.0,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exfoliation of self-assembled 2D aluminum synthesized via magnetron sputtering","authors":"Bo Zhang ,&nbsp;Petr Janicek ,&nbsp;Tomas Wagner","doi":"10.1016/j.tsf.2024.140557","DOIUrl":"10.1016/j.tsf.2024.140557","url":null,"abstract":"<div><div>Two-dimensional materials have been rapidly developed in recent years. As a type of two-dimensional material, 2D metals exhibit many unique physical and chemical properties. Here, we prepared two-dimensional aluminum materials via magnetron sputtering. The layers were exfoliated via sonication and annealing methods (thermal exfoliation methods). After exfoliation, the layers were observed via optical microscopy, scanning electron microscopy and transmission electron microscopy. The atomic force microscopy results show that the thicknesses of the layers range from ∼1 nm to ∼45 nm. The simulation results supported those two-dimensional layers formed in a self-assembly process.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140557"},"PeriodicalIF":2.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gold nanoparticles decoration of zinc oxide nanowalls on flexible substrates","authors":"R. Ofek Almog ,&nbsp;E. Shashar ,&nbsp;K. Kadan-Jamal ,&nbsp;Y. Shacham-Diamand","doi":"10.1016/j.tsf.2024.140553","DOIUrl":"10.1016/j.tsf.2024.140553","url":null,"abstract":"<div><div>Metal oxide nanostructures decorated with noble metal nanoparticles are hybrid structures with a special interface that combines the unique properties of those two materials. Noble metal nanoparticles exhibit useful catalytic properties, and they can be functionalized with biomaterials. In this work, we use gold nanoparticles that can be functionalized using thiolated molecules bound to the metal surface. Zinc oxide nano-walls (NWs) are a high surface-to-volume ratio wide-bandgap semiconductor nanostructures that, due to their biocompatibility and non-toxicity characteristics, can be used in biosensing applications that involve contact with tissues and cells. ZnO nano-walls can be deposited from aqueous solutions at low temperatures, both on rigid and flexible substrates, using a simple and low-cost process that can be upscaled to high-volume production. In this work, we study the nucleation and growth of the ZnO nano-walls and we describe the gold nanoparticles decoration at three different schemes of surface functionalization. Among these schemes, we found that the process where ZnO nano-walls were deposited on polyimide substrates followed by activation using a self-assembled monolayer, resulted in a decoration with uniform size and distribution of gold nano-particles. That process was studied as a function of the growth temperature, solution concentration, and time. The morphology of the ZnO nano-walls was studied by Scanning Electron microscope imaging and the crystal structure was studied by X-ray diffraction.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140553"},"PeriodicalIF":2.0,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}