Thin Solid Films最新文献_第6页

Self-healing anticorrosion one-step electrodeposited layered double hydroxide coating on steel rebar in concrete pore solution 混凝土孔隙溶液中钢筋一步电沉积层状双氢氧化物自愈防腐涂层

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2025-12-30 DOI: 10.1016/j.tsf.2025.140849

Houze Zhou , Wencong Deng , Qi Wang , Rui Liang , Danqian Wang

引用次数: 0

Glancing angle deposition of TiO2 vertical nanopillars on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) with enhanced optical and charge transfer characteristics TiO2垂直纳米柱在聚（3,4-乙烯二氧噻吩）上的掠角沉积：具有增强光学和电荷转移特性的聚（苯乙烯磺酸盐）

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2026-01-09 DOI: 10.1016/j.tsf.2026.140856

Salam Jimkeli Singh , Lanusubo Walling , P. Chinnamuthu , Asit Kumar Kar

{"title":"Glancing angle deposition of TiO2 vertical nanopillars on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) with enhanced optical and charge transfer characteristics","authors":"Salam Jimkeli Singh , Lanusubo Walling , P. Chinnamuthu , Asit Kumar Kar","doi":"10.1016/j.tsf.2026.140856","DOIUrl":"10.1016/j.tsf.2026.140856","url":null,"abstract":"<div><div>The integration of inorganic-organic hybrid heterostructures offers a promising route toward efficient optoelectronic devices by combining the complementary properties of wide-band-gap semiconductors and conducting polymers. Herein, we report for the first time the direct growth of vertically aligned anatase TiO<sub>2</sub> nanopillars on electrodeposited poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films using glancing angle deposition (GLAD) at substrate temperatures below 70 °C. This controlled temperature approach preserves the structural integrity of PEDOT:PSS while enabling nanopillar crystallisation. The comprehensive structural, chemical, optical, and photophysical characterisation confirms the successful formation of TiO<sub>2</sub>/PEDOT:PSS heterostructures. The Raman analysis reveals intensity redistribution and a red shift of characteristic polymer peaks, indicating strong polymer-oxide coupling. The UV–Vis spectroscopy demonstrates enhanced light absorption and reduced band gaps (3.15 eV for nanopillars) compared with pristine TiO<sub>2</sub>. The photoluminescence (PL) quenching and time-correlated single-photon counting confirm efficient interfacial charge transfer, most pronounced in the nanopillar heterostructure. The demonstrated strategy provides a scalable pathway for hybrid nanostructures demonstrating significant potential in photovoltaics, photocatalysis, and photodetection.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140856"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ti-rich thin film synthesis of AlCoCrCuFeNiTi high entropy alloy via magnetron co-sputtering and its mechanical properties 磁控共溅射法制备AlCoCrCuFeNiTi高熵合金富钛薄膜及其力学性能

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2026-01-01 DOI: 10.1016/j.tsf.2025.140850

Sachin Sachin, Ajay Kumar

{"title":"Ti-rich thin film synthesis of AlCoCrCuFeNiTi high entropy alloy via magnetron co-sputtering and its mechanical properties","authors":"Sachin Sachin, Ajay Kumar","doi":"10.1016/j.tsf.2025.140850","DOIUrl":"10.1016/j.tsf.2025.140850","url":null,"abstract":"<div><div>High entropy alloys (HEAs) are advanced materials which have been in research focus for over two decades. AlCoCrCuFeNiTi is one such HEA which have been studied and synthesized in bulk with excellent mechanical properties but not studied in thin film. This work explores the synthesis of AlCoCrCuFeNiTi thin films via co-sputtering on a magnetron sputtering setup using three targets namely Al, CoCrCuFeNi and Ti targets as the magnetron sputtering allows to synthesize thin film in high vacuum which result in high quality films. Three different thin films have been synthesized on Si substrates at room temperature. The films synthesized were found to have broad X-ray diffraction peak and appeared as low crystalline films, resulting due to high quenching rate at room temperature deposition, high negative mixing enthalpy, and significant atomic mismatch due to larger Al and Ti atoms. The thermodynamic parameters of the films are evaluated using the various equations and the synthesized films HEAs are predicted to be a solid solution. The film's surface morphology is studied by atomic force microscopy and scanning electron microscopy and the films had cauliflower-like cluster agglomeration and nano cracks with the highest average width of 16 ± 5.1 nm. The films are also studied for mechanical properties using nanoindentation, and the maximum hardness of 3.35 GPa and Young’s modulus of 105.13 GPa was achieved. The present work is an attempt to investigate HEAs thin films synthesized via magnetron sputtering (co-sputtering), as the AlCoCrCuFeNiTi system of HEAs have not been fabricated in thin film form. This work could also encourage more research into the co-sputtering method of synthesis of more complex HEAs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140850"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145928009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma-deposited tungsten-doped amorphous carbon films for advanced dry etching hardmasks 用于先进干蚀刻硬掩模的等离子沉积掺钨非晶碳膜

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2025-12-31 DOI: 10.1016/j.tsf.2025.140848

Gaosheng Zhang , Yulong Wu , Haydn Zhou , Xinggui Zhou , Zongliang Huo

{"title":"Plasma-deposited tungsten-doped amorphous carbon films for advanced dry etching hardmasks","authors":"Gaosheng Zhang , Yulong Wu , Haydn Zhou , Xinggui Zhou , Zongliang Huo","doi":"10.1016/j.tsf.2025.140848","DOIUrl":"10.1016/j.tsf.2025.140848","url":null,"abstract":"<div><div>To address the urgent demands of sub-3 nm semiconductor node fabrication in advanced logic and three-dimensional flash memory architectures, we developed tungsten-doped amorphous carbon (WDC) hardmasks by plasma-enhanced chemical vapor deposition (PECVD) employing propylene (C<sub>3</sub>H<sub>6</sub>) and tungsten hexafluoride (WF<sub>6</sub>) precursors. Systematic modulation of WF<sub>6</sub> flow rates (0-320 sccm) achieved tungsten incorporation up to 40 at%, resulting in remarkable material property enhancements. X-ray reflectometry and nanoindentation confirmed a 6-fold density increase (1.36 to 8.24 g/cm³) and 3.3-fold hardness improvement (3.2 to 10.5 GPa). Mechanistically, X-ray photoelectron spectroscopy (XPS) analysis revealed predominant C-W bonds (283.5 eV), while high-resolution transmission electron microscopy (HRTEM) unveiled 3-4 nm tungsten carbide (WC<sub>1-x</sub>) nanocrystallites that simultaneously enhance structural integrity and fluorocarbon plasma resistance. The optimized composition demonstrated superior etch resistance with 55% reduced etch rate, accompanied by modulus enhancement to 125 GPa and controlled surface roughness (2.5 to 3.8 nm). This scalable, tunable approach advances hardmask technology for extreme ultraviolet lithography and next-generation memory devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140848"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145928011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of Graphene on catalyst copper substrates: Growth mechanisms and friction behavior 石墨烯在铜基催化剂上的合成：生长机制和摩擦行为

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2026-01-03 DOI: 10.1016/j.tsf.2026.140852

M.F.C. Ordoñez , D.J. Feria , I. Pereyra , M.N.P. Carreño , R.M. Souza , A.P. Tschiptschin

{"title":"Synthesis of Graphene on catalyst copper substrates: Growth mechanisms and friction behavior","authors":"M.F.C. Ordoñez , D.J. Feria , I. Pereyra , M.N.P. Carreño , R.M. Souza , A.P. Tschiptschin","doi":"10.1016/j.tsf.2026.140852","DOIUrl":"10.1016/j.tsf.2026.140852","url":null,"abstract":"<div><div>This work investigates the synthesis, characterization, and tribological performance of bi- and few-layer graphene using copper substrates as catalysts. Two types of copper substrates were employed: bulk copper foils (0.25 mm thickness) and thin copper films (∼800 nm thickness) deposited by magnetron sputtering. Bilayer amorphous-carbon/copper (a-C/Cu) and copper/amorphous-carbon (Cu/a-C) films were also produced as solid-carbon-source substrates. Graphene formation occurred via two distinct thermal processes: (1) catalytic chemical vapor deposition (CVD) on bulk copper foils and on copper films without amorphous carbon, using methane as the carbon precursor under Ar–H₂ atmospheres; and (2) annealing of a-C/Cu and Cu/a-C films under H₂–Ar without methane, in which graphene forms by carbon diffusion from the solid source. Raman spectroscopy confirmed the presence of bi- and few-layer graphene, revealing variations in layer number, crystallinity, and structural disorder. Atomic force microscopy (AFM) lateral-friction mapping showed local friction reduction in graphene-covered regions, confirming its role in modulating nanoscale tribological response. Macroscale sliding tests under normal loads of 0.5–2 N revealed load-dependent behavior: the lowest load yielded a stable low friction coefficient (∼0.18), whereas higher loads increased friction (up to 0.35) and wear rates due to progressive graphene removal. Raman analysis of the worn tracks showed loss of the 2D band, increased D-band intensity, and the emergence of D + G features, indicating disorder, amorphization, and partial oxidation of the exposed copper substrate. The results demonstrate that although graphene initially reduces friction and protects the surface, prolonged load-bearing contact is governed by the stability of its ultrathin layers.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140852"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145928010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of polycrystalline sputtered niobium thin films: The role of substrate and growth pressure 多晶溅射铌薄膜的优化：衬底和生长压力的作用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2026-01-08 DOI: 10.1016/j.tsf.2026.140855

Pukar Sedai , Arjun Sapkota , Allison Avery , Kaylee I. Perez , Robert M. Klaes , Reza Loloee , Nathan Satchell

{"title":"Optimization of polycrystalline sputtered niobium thin films: The role of substrate and growth pressure","authors":"Pukar Sedai , Arjun Sapkota , Allison Avery , Kaylee I. Perez , Robert M. Klaes , Reza Loloee , Nathan Satchell","doi":"10.1016/j.tsf.2026.140855","DOIUrl":"10.1016/j.tsf.2026.140855","url":null,"abstract":"<div><div>We report a systematic study of the growth and characterization of niobium (Nb) thin films deposited at near room temperature on various sapphire and silicon substrates under different sputtering conditions, with the goal of optimizing deposition conditions and elucidating the relationship between structural quality and superconducting performance. X-ray reflectivity measurements indicate that films grown on C-plane sapphire exhibit low surface roughness, corresponding to smooth, uniform growth. X-ray diffraction analysis reveals that these films also display superior crystallinity, with sharper peaks and narrower full width at half maximum compared to films grown on A-plane, R-plane sapphire, and silicon substrates. Electrical transport measurements show a clear correlation between improved structural quality and higher superconducting critical temperature and increased coherence length. These results highlight the critical role of substrate choice and deposition parameters in determining the microstructural and superconducting properties of Nb thin films. Our findings offer guidance for optimizing Nb-based superconducting electrodes through careful substrate and process selection for near-room-temperature growth.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140855"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145928007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Al-doped ZnO thin films for ultraviolet photodetection and solution processed PN junction formation 用于紫外光探测和溶液处理PN结形成的al掺杂ZnO薄膜

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-15 Epub Date: 2026-01-08 DOI: 10.1016/j.tsf.2026.140853

Joel K Joseph , Thyda Lavanya , Koppula Naresh , S Suneetha , R. Thangavel , A. Karthigeyan , Kuppusamy Thangaraju

{"title":"Al-doped ZnO thin films for ultraviolet photodetection and solution processed PN junction formation","authors":"Joel K Joseph , Thyda Lavanya , Koppula Naresh , S Suneetha , R. Thangavel , A. Karthigeyan , Kuppusamy Thangaraju","doi":"10.1016/j.tsf.2026.140853","DOIUrl":"10.1016/j.tsf.2026.140853","url":null,"abstract":"<div><div>We deposit aluminium (Al)-doped ZnO (AZO) thin films by sol-gel derived spin-coating process for ultraviolet (UV) photodetectors. The substitution of Al at zinc- site in the ZnO has contributed to the conversion of n-type ZnO to have p-type characteristics by the Hall-effect measurement. The resistivity of AZO films [166.48 Ωm when compared to that (174.70 Ωm) of pristine ZnO] showed significant reduction with an increase in carrier concentration (upto 3.38 × 10<sup>12</sup> cm<sup>-3</sup>) upon doping, improving the photocurrent in the films. Al-doping has slightly reduced the bandgap levels from 3.84 eV (pristine ZnO) to 3.82 eV. The decrease in transmittance (70%) of AZO films reveals the presence of increased scattering centres upon addition of dopant atoms. The AZO films have the wurtzite crystal structure with a preferential growth along the (002) plane. The X-ray photoelectron spectroscopy and Field emission scanning electron microscopic analysis confirm the presence of Al in ZnO along with a wrinkle type of surface morphology. Solution-processed UV photodetectors exhibited the improved responsivity (16.5 mA/W), current response (7 µA), detectivity (1.7 × 10<sup>10</sup> Jones), and external quantum efficiency (5.6 %) at 3 V under the UV light illumination (365 nm at 3 mW/cm<sup>2</sup>) for 2 mol. % of Al dopant. The aggregation of Al dopants as well as its saturation cause the reduction in the photocurrent response and device efficiencies at the higher concentrations. The current-voltage characteristics of solution processed ZnO/AZO junction resembles a PN junction diode, showing its potential use in the optoelectronic device applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"834 ","pages":"Article 140853"},"PeriodicalIF":2.0,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation of mixed monolayers of organo-modified inorganic nanoparticles with miscible modified chains and interactions between their components 具有混相修饰链的有机修饰无机纳米颗粒混合单层的形成及其组分之间的相互作用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-01 Epub Date: 2025-11-29 DOI: 10.1016/j.tsf.2025.140833

Ryoma Nakada , Tsubasa Takiguchi , Atsuhiro Fujimori

{"title":"Formation of mixed monolayers of organo-modified inorganic nanoparticles with miscible modified chains and interactions between their components","authors":"Ryoma Nakada , Tsubasa Takiguchi , Atsuhiro Fujimori","doi":"10.1016/j.tsf.2025.140833","DOIUrl":"10.1016/j.tsf.2025.140833","url":null,"abstract":"<div><div>We investigated the interactions between a mixed Langmuir monolayer of organo-modified nanoclays and nanodiamonds surface-modified with stearyl chains. In the organo-modified nanoclay, the montmorillonite surface was chemically modified with a long-chain quaternary ammonium salt. The organo-diamond surfaces were anionically modified with stearic acid. The modified chains, dimethyl distearyl ammonium chloride, and stearic acid exhibited ideal mixing in a mixed monolayer. Nonetheless, the organo-modified nanoclay and the organo-modified nanodiamond were phase-separated systems in the mixed monolayer. The surface morphology confirmed the independent aggregate morphology of each modified nanoparticle and the maintenance of two-dimensional order between the modified chains. However, the layered regularity of the multilayers was lost. From the results of this study, even if the interactions between the modified chains were compatible, there were cases in which the mixed monolayer became a phase-separated system because of the effect of the size and shape of the nanoparticles bound as hydrophilic groups. This study established a methodology for the miscibility of Langmuir monolayers that combines mesoscopic evaluation using two-dimensional state curves with comparative microscopic morphological evaluation. It also provides a means of establishing a method for patterned morphology control by evaluating the interactions between the modified chain moieties and the nanoparticles.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140833"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emulating synaptic plasticity dynamics of ZnO/PVA:rGO bilayer memristive devices ZnO/PVA:rGO双层记忆器件突触可塑性动力学模拟

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-01 Epub Date: 2025-12-17 DOI: 10.1016/j.tsf.2025.140842

Nikhilamol Simon , Harsh Ranjan , Manoj Mohan , Saurabh Kumar Pandey

{"title":"Emulating synaptic plasticity dynamics of ZnO/PVA:rGO bilayer memristive devices","authors":"Nikhilamol Simon , Harsh Ranjan , Manoj Mohan , Saurabh Kumar Pandey","doi":"10.1016/j.tsf.2025.140842","DOIUrl":"10.1016/j.tsf.2025.140842","url":null,"abstract":"<div><div>Memristors, as non-volatile resistive switching elements, have emerged as promising candidates for neuromorphic computing owing to their ability to replicate synaptic plasticity. In this article, we have investigated the synaptic behaviour of ZnO/PVA:rGO bilayer devices, where the Polyvinyl Alcohol (PVA) incorporates with reduced graphene oxide (rGO) at 1, 2, and 3 wt%. The electrodes consist of silver (Ag) on the top and indium tin oxide (ITO) at the bottom. Graphene oxide (GO) was synthesized using a modified Hummers method and subsequently reduced to rGO via ascorbic acid. The Zinc Oxide (ZnO) layer was deposited using electron-beam evaporation, while the PVA:rGO layer was fabricated by spin coating. The fabricated ZnO/PVA:rGO/Ag/ITO devices demonstrate forming-free bipolar resistive switching with a compliance current of 10 mA, exhibiting clear potentiation and depression under successive triangular DC sweeps (0 V → 0.7 V → 0 V → -0.7 V → 0 V). The 1 wt% rGO device, in particular, shows stable and reproducible conductance modulation over multiple consecutive cycles, confirming synaptic plasticity and strong potential for neuromorphic computing. In contrast, higher rGO loadings (2 and 3 wt%) resulted in diminished synaptic responses, indicating that excessive rGO content can impair performance. These findings highlight the critical role of rGO concentration in achieving stable and controllable switching, making the device architecture well-suited for artificial synapse and neuromorphic computing applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140842"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulation of in-plane magnetic anisotropy in FeGa alloy epitaxial films with Ga content Ga含量对FeGa合金外延膜面内磁各向异性的调制作用

IF 2 4区材料科学

Thin Solid Films Pub Date : 2026-01-01 Epub Date: 2025-12-25 DOI: 10.1016/j.tsf.2025.140845

Minh-Anh Tran Nguyen , Anh Tuan Duong , Sunglae Cho

{"title":"Modulation of in-plane magnetic anisotropy in FeGa alloy epitaxial films with Ga content","authors":"Minh-Anh Tran Nguyen , Anh Tuan Duong , Sunglae Cho","doi":"10.1016/j.tsf.2025.140845","DOIUrl":"10.1016/j.tsf.2025.140845","url":null,"abstract":"<div><div>In this study, we demonstrate the evidence of composition-driven control of in-plane magnetic anisotropy in Fe<sub>100-x</sub>Ga<sub>x</sub> epitaxial films with Ga concentrations ranging from 0 to 30 %. Epitaxial Fe<sub>100-x</sub>Ga<sub>x</sub> thin films were grown on MgO(100) substrates by molecular beam epitaxy (MBE). Crystalline quality gradually degrades as Ga content increases. The out-of-plane lattice parameter expands systematically with Ga substitution, reflecting lattice distortion due to the larger atomic radius of Ga. Magnetic measurements reveal a monotonic reduction in saturation magnetization and a pronounced increase in coercivity with increasing Ga content, while electrical transport demonstrates a corresponding rise in resistivity. Most notably, pure Fe exhibits sharp fourfold anisotropy with well-defined easy axes, which becomes progressively weakened at intermediate Ga levels and evolves into nearly isotropic behavior at 30 at. % Ga. These results shown that the in-plane magnetic anisotropy of Fe<sub>100-x</sub>Ga<sub>x</sub> epitaxial films can be systematically tuned by composition, bridging bulk magnetostriction studies and thin-film spintronic applications, and offering a route to engineer anisotropy symmetry for functional device application.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"833 ","pages":"Article 140845"},"PeriodicalIF":2.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145883925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0