Thin Solid Films最新文献

{"title":"Corrigendum to “A structure zone diagram including plasma-based deposition and ion etching” [Thin Solid Films 518 (2010) 4087–4090]","authors":"André Anders","doi":"10.1016/j.tsf.2024.140574","DOIUrl":"10.1016/j.tsf.2024.140574","url":null,"abstract":"","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140574"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conventional epitaxy of NiO thin films on muscovite mica and c-Al2O3 substrates","authors":"Faezeh A․F․ Lahiji , Biplab Paul , Arnaud le Febvrier , Per Eklund","doi":"10.1016/j.tsf.2024.140566","DOIUrl":"10.1016/j.tsf.2024.140566","url":null,"abstract":"<div><div>Fiber-textured and epitaxial NiO thin films were deposited on Si(100), c-Al<sub>2</sub>O<sub>3</sub>, and muscovite mica(001) substrates using reactive magnetron sputtering at substrate temperatures of 300 °C and 400 °C, to investigate the effect of film thickness and substrate temperature on epitaxial growth of NiO films. The as-deposited films exhibited a face-centered cubic structure with a larger lattice constant, attributed to strain induced during the sputtering process. With an increase in substrate temperature to 400 °C, the d-spacing decreased due to strain release, approaching the NiO bulk value for the thickest film. The NiO film grown on Si(100) displayed fiber texture. On c-plane sapphire, NiO thin films exhibited twin domains and three-fold symmetry, consistent with expected crystallographic orientation relationship for NaCl-structured materials on sapphire:<span><math><mrow><mspace></mspace><msub><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow><mrow><mi>N</mi><mi>i</mi><mi>O</mi></mrow></msub><mrow><mo>∥</mo><msub><mrow><mo>(</mo><mn>0001</mn><mo>)</mo></mrow><mrow><mi>A</mi><msub><mi>l</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></msub><mrow><mspace></mspace><mtext>and</mtext><mspace></mspace></mrow><msub><mrow><mo>[</mo><mrow><mn>0</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>1</mn></mrow><mo>]</mo></mrow><mrow><mi>N</mi><mi>i</mi><mi>O</mi><mspace></mspace></mrow></msub><mo>∥</mo></mrow><msub><mrow><mo>[</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>010</mn></mrow><mo>]</mo></mrow><mrow><mi>A</mi><mi>l</mi><mn>2</mn><mi>O</mi><mn>3</mn></mrow></msub></mrow></math></span>, <span><math><mrow><msub><mrow><mo>[</mo><mrow><mn>01</mn><mover><mn>1</mn><mo>¯</mo></mover></mrow><mo>]</mo></mrow><mrow><mi>N</mi><mi>i</mi><mi>O</mi><mspace></mspace></mrow></msub><mrow><mo>∥</mo></mrow><msub><mrow><mo>[</mo><mrow><mn>10</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>]</mo></mrow><mrow><mi>A</mi><mi>l</mi><mn>2</mn><mi>O</mi><mn>3</mn></mrow></msub></mrow></math></span>. On muscovite mica(001) substrates, the observed epitaxial shows that the mechanism is conventional epitaxy, rather than van der Waals epitaxy, consistent with the epitaxial growth of the non-layered non-van-der-Waals compound NiO. The epitaxial relationship was identified as of <span><math><mrow><msub><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow><mrow><mi>N</mi><mi>i</mi><mi>O</mi></mrow></msub><mrow><mo>∥</mo></mrow><msub><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow><mrow><mi>M</mi><mi>i</mi><mi>c</mi><mi>a</mi></mrow></msub></mrow></math></span> and <span><math><mrow><msub><mrow><mo>[</mo><mrow><mn>0</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>1</mn></mrow><mo>]</mo></mrow><mrow><mi>N</mi><mi>i</mi><mi>O</mi><mspace></mspace></mrow></msub><mrow><mo>∥</mo></mrow><msub><mrow><mo>[</mo><mn>010</mn><mo>]</mo></mrow><mrow><mi>M</mi><mi>i</mi><mi>c</mi><mi>a</mi></mrow></msub></mrow></math></span>, <span><math><mrow><msub><mrow><mo>[</mo><mro","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140566"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review on epitaxial lift-off for III-V solar cells","authors":"Daan van der Woude ,&nbsp;Lara Barros Rebouças ,&nbsp;Elias Vlieg ,&nbsp;Joost Smits ,&nbsp;John Schermer","doi":"10.1016/j.tsf.2024.140570","DOIUrl":"10.1016/j.tsf.2024.140570","url":null,"abstract":"<div><div>Epitaxial lift-off (ELO) as a step in the fabrication of III-V devices offers a significant cost-reduction by non-destructive removal of the growth substrate, which can subsequently be reused. Specifically in solar cell production, ELO facilitates the creation of thin-film configurations that surpass the performance of substrate-based cells. This process involves a selective lateral etch of a sacrificial layer, typically a high-aluminum content AlGaAs layer, with hydrofluoric acid (HF). In the reaction, various aluminum-fluoride compounds, arsenic gas, fluoride ions, and water are formed. However, challenges arise in ensuring unhampered etching due to geometric constraints and side reactions leading to solid material deposits, including aluminum ions, hydrogen gas, and solid arsenic. This review provides an overview of all major aspects involving the theoretical understanding and practical application of epitaxial lift-off. An analysis is presented of various studies of the process parameters that influence the sacrificial layer etch rate under various experimental conditions. This includes factors such as the release layer's aluminum fraction, thickness, and doping concentrations, as well as experimental conditions, such as HF concentration and temperature. The influence of stress and strain on the ELO process, and the challenge to study this comprehensively, is also addressed. This work is concluded with remarks regarding substrate reuse and the challenges and opportunities for ELO, such as thin-film fragility, alternative release layers and multi-release ELO.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140570"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation between sputtering method, microstructure and properties of TiOx thin films deposited by reactive direct-current and high-power impulse magnetron sputtering","authors":"Younes Lablali ,&nbsp;Rachid Oubaki ,&nbsp;Anas Ghailane ,&nbsp;Jones Alami ,&nbsp;Mohammed Makha","doi":"10.1016/j.tsf.2024.140573","DOIUrl":"10.1016/j.tsf.2024.140573","url":null,"abstract":"<div><div>In this study, Titanium oxide (TiO_x) thin films were produced via reactive High-Power Impulse Magnetron Sputtering (HiPIMS) and reactive Direct-current Magnetron Sputtering (DcMS). The influence of oxygen reactive gas content on the structural, morphological, and optical characteristics of TiO_x films was analyzed using various techniques including X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and UV–visible spectroscopy. We found that HiPIMS-deposited films exhibited a mixed anatase and rutile phase structure, while DcMS-deposited films showed a pure anatase structure. Additionally, HiPIMS deposited films demonstrated smaller grain sizes and smoother surfaces compared to DcMS deposited films. Elemental analysis revealed that HiPIMS-grown films were consistently over-stoichiometric, whereas a transition from sub to over-stoichiometric composition was observed in the DcMS-grown films. Moreover, the optical band gap values of TiO_x films deposited via HiPIMS were higher than those deposited via DcMS, decreasing as the oxygen flow rate increased. TRIM calculations were employed to assess the average energy of particles reaching the growing film in both HiPIMS and DcMS depositions, confirming the observed structural differences.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140573"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the effect of layer thickness on the elastoplastic properties of the constituent materials of CrN/CrAlN multilayer coatings: a nanoindentation and finite element-based investigation","authors":"Yamen Ben Ammar ,&nbsp;Khalil Aouadi ,&nbsp;Aurélien Besnard ,&nbsp;Alex Montagne ,&nbsp;Corinne Nouveau ,&nbsp;Faker Bouchoucha","doi":"10.1016/j.tsf.2024.140581","DOIUrl":"10.1016/j.tsf.2024.140581","url":null,"abstract":"<div><div>This paper aims to assess the effect of layer thickness on the elastoplastic properties of the constituent materials of multilayer coating systems, as well as on the stress and strain fields in the vicinity of the coating/substrate interface. A methodology based on a trust-region reflective optimization algorithm, integrated with finite element analysis of the nanoindentation process, is employed to extract the elastoplastic properties of the distinct layers, constituting multilayer coating. This approach is validated on a CrN/CrAlN multilayer coating systems with varying layer thicknesses from 1 to 0.35 µm, by which Young's modulus (E), yield stress (σ_y), and work hardening exponent (n) of each individual coating material layer were obtained. The results revealed a reduction in the hardness and Young's modulus of either CrN, or CrAlN coating layer as the layer thickness decreased. Finite element analysis of the nanoindentation process demonstrated that decreasing the coating layer thickness leads to an increase in the plastic deformation within the coatings, which reduces the stress concentration in this area. The simulation results suggest that an optimum thickness of 0.5 μm of CrAlN and CrN monolayer materials would improve the adhesion properties of CrN/CrAlN multilayer coatings.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140581"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142759287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy","authors":"Lili Huo ,&nbsp;R. Lingaparthi ,&nbsp;N. Dharmarasu ,&nbsp;K. Radhakrishnan","doi":"10.1016/j.tsf.2024.140572","DOIUrl":"10.1016/j.tsf.2024.140572","url":null,"abstract":"<div><div>The growth instabilities of N-polar GaN on vicinal SiC substrates with an offcut angle of 4° towards the <em>m-plane</em> using plasma-assisted molecular beam epitaxy (PA-MBE) were systematically studied. The morphology with the coexistence of step bunching and step meandering was demonstrated experimentally for N-polar GaN grown on vicinal SiC substrates. The morphology evolution of N-polar GaN as a function of time reveals that the step bunching instability occurred first in the initial stage, followed by the step meandering. The step bunching instability is attributed to the negative Ehrlich-Schwoebel barrier (ESB), which dominates the initial growth. On the other hand, step meandering is explained by the higher positive ESB along the edges of macrosteps. Additionally, step meandering of N-polar GaN was enhanced for samples grown with lower Ga flux, while step bunching was found to be alleviated. On the other hand, its Ga-polar counterpart only demonstrated step bunching features. In addition, N-polar GaN grown on vicinal SiC under optimal conditions still exhibited a much rougher surface than the N-polar GaN grown on on-axis substrates. These results indicate that PA-MBE grown N-polar GaN surface may not be improved by using vicinal SiC substrates when compared with that grown on on-axis SiC substrates.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140572"},"PeriodicalIF":2.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving insulating film deposition stability with atmospheric pressure plasma jet by post-mixing precursor feedthrough with hollow electrode","authors":"Xinglei Cui,&nbsp;Long Li,&nbsp;Zhonglian Li,&nbsp;Runhua Li,&nbsp;Yizhuo Wang,&nbsp;Xi Zhu,&nbsp;Zhi Fang","doi":"10.1016/j.tsf.2024.140562","DOIUrl":"10.1016/j.tsf.2024.140562","url":null,"abstract":"<div><div>Film deposition with atmospheric pressure plasma jet (APPJ) is an effective approach to enhance surface performances of insulating materials for its high reactivity and flexible operation. However, the plasma-activated precursor will inevitably produce inner-wall contamination in the dielectric tube as it travels through the electrode gap, deteriorating film deposition stability during long-term operation. In this paper, a post-mixing precursor feedthrough is designed to suppress the dielectric tube contamination and improve film deposition stability. The influences of traditional pre-mixing feedthrough and post-mixing feedthrough proposed in this paper on discharge and film deposition stability are compared. The thickness of inner-wall contamination is acquired by image processing technique. The electrical and optical discharge characteristic variations with operation duration are diagnosed to evaluate the discharge stability. The film performance is characterized by the water contact angle (WCA) and flashover voltage. Finally, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) measurements are performed for the film physicochemical property variations to explore the mechanism about the effect of precursor feedthrough on film deposition stability. The results indicate that the thickness of the contamination is reduced by 79.9 % for the post-mixing feedthrough after a 30-minute operation. Contamination growth increases the initial discharge voltage and decreases the discharge strength, which is remarkably inhibited for the post-mixing feedthrough. The degradation of WCA and flashover voltage for the post-mixing feedthrough is &lt;10 % after a 30-minute operation. The film physicochemical properties for the post-mixing feedthrough exhibit no spectacular change according to SEM and XPS results. Whereas, the ratio of high-oxidized silicone bonds for the pre-mixing feedthrough is reduced and the degree of cross-linking is drastically decreased. This paper provides a reference for optimizing precursor feedthrough to improve the stability of film deposition with APPJ.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140562"},"PeriodicalIF":2.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic activity of ZnO- and TiO2- coated poly (methyl methacrylate) microcapsules by atomic layer deposition for water purification","authors":"Marta A. Forte ,&nbsp;Ricardo M. Silva ,&nbsp;M.Sameiro T. Gonçalves ,&nbsp;Rui F. e Silva ,&nbsp;Carlos J. Tavares","doi":"10.1016/j.tsf.2024.140552","DOIUrl":"10.1016/j.tsf.2024.140552","url":null,"abstract":"<div><div>Poly (methyl methacrylate) (PMMA) is a common everyday polymer material that can be used as a substrate to improve the performance of functional coatings. In this work, PMMA microcapsules (PMMA-MCs) are coated with photocatalytic metal-oxide thin films. A low temperature (100 °C) atomic layer deposition of ZnO and TiO₂ on PMMA-MCs is described to form a three-dimensional structured composite. Scanning electron microscopy observations confirms that the ZnO and TiO₂ thin films are conformal to the spherical surface of the PMMA-MCs substrates, creating a greater photocatalytic active surface area. The photocatalytic activity of the prepared ZnO- and TiO₂-PMMA-MCs composites towards the mineralization of methylene blue (MB), a model pollutant, are investigated. Under UV–VIS irradiation, the ZnO-PMMA-MCs are more efficient towards MB dye degradation. Therefore, the proposed preparation approach for core-shell structured composites is considered as a valid alternative to the conventional routes for the development of efficient supported photocatalysts in heat sensitive materials for water purification application.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140552"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth and characterization of Sb2(SxSe1-x)3 thin films prepared by chemical-molecular beam deposition for solar cell applications","authors":"T.M. Razykov ,&nbsp;K.М. Kuchkarov ,&nbsp;B.A. Ergashev ,&nbsp;Lukas Schmidt-Mende ,&nbsp;Tim Mayer ,&nbsp;M. Tivanov ,&nbsp;М. Makhmudov ,&nbsp;D.Z. Isakov ,&nbsp;R. Khurramov ,&nbsp;M. Primmatov ,&nbsp;K.F. Shakhriev ,&nbsp;Sh.B. Utamuradova ,&nbsp;R.T. Yuldoshov","doi":"10.1016/j.tsf.2024.140554","DOIUrl":"10.1016/j.tsf.2024.140554","url":null,"abstract":"<div><div>Antimony sulfide selenide, Sb₂(S_xSe_1-x)₃ (<em>x</em> = 0–1), is a tunable bandgap compound that combines the advantages of antimony sulfide (Sb₂S₃) and antimony selenide (Sb₂Se₃). This material shows great potential as a light-absorbing material for low-cost, low-toxicity, and highly stable thin-film solar cells. In this study, Sb₂(S_xSe_1-x)₃ thin films were deposited by chemical-molecular beam deposition on soda-lime glass substrates using antimony (Sb), selenium (Se), and sulfur (S) precursors at a substrate temperature of 420 °C. By independently controlling the source temperatures of Sb, Se, and S, Sb₂(S_xSe_1-x)₃ thin films with varying component ratios were obtained. Scanning electron microscopy revealed significant changes in the surface morphology of the films depending on the elemental ratio of [S]/([S]+[Se]). Crystallites shaped like cylindrical microrods with <em>d</em> = 0.5–2 µm diameter and <em>l</em> = 3–5 µm length were grown at a certain angle on the substrate. X-ray diffraction patterns showed peaks corresponding to the orthorhombic structures of Sb₂Se₃, Sb₂S₃ and their ternary compounds Sb₂(S_xSe_1-x)₃. The optical characterization revealed a high absorption coefficient of 10⁵ cm⁻¹ in the visible and near-infrared light regions. The band gap of the compounds changed almost linearly from 1.2 eV to 1.36 eV with a change in the ratio of elements [S]/([S]+[Se]) from 0.03 to 0.08.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140554"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preface to a Special Issue E-MRS 2023 Fall Meeting, Symposium A, Integration of advanced materials on silicon, from classical to neuromorphic and quantum applications","authors":"Abderraouf Boucherif ,&nbsp;Andriy Hikavyy ,&nbsp;Jacopo Frigerio ,&nbsp;Katarzyna Hnida-Gut","doi":"10.1016/j.tsf.2024.140539","DOIUrl":"10.1016/j.tsf.2024.140539","url":null,"abstract":"","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140539"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}