Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-15DOI: 10.1016/j.tsf.2026.140862
Jiann-Shing Jeng , Yu-Chen Chen , Jen-Sue Chen
{"title":"Examining the impact of different metal electrodes on contact resistance and performance of zinc tin oxide thin-film transistors","authors":"Jiann-Shing Jeng , Yu-Chen Chen , Jen-Sue Chen","doi":"10.1016/j.tsf.2026.140862","DOIUrl":"10.1016/j.tsf.2026.140862","url":null,"abstract":"<div><div>Thin-film transistors (TFTs) were examined for their contact resistance between solution-processed zinc tin oxide (ZTO) semiconductor channels and various source/drain (S/D) electrodes, including Al, Mo, Ti, and Pt, using an external loading method. By comparing ZTO-TFTs with various S/D materials, we investigated the influence of S/D electrodes on TFT electrical properties in this study. Thin film transistors that use molybdenum S/D electrodes have the lowest width-normalized contact resistance of 232.5 Ω·cm and offer good transfer characteristics with an intrinsic field-effect mobility of 5.75 cm<sup>2</sup>/Vs, compared to other electrodes. Based on the results of the depth-profiling X-ray photoelectron spectroscopy analysis and transmission electron microscopy, this study suggests possible metal contact mechanisms (i.e., work function of the electrodes, the existence of an interface layer, and the diffusion ability of electrode materials) in solution-processed ZTO TFTs with different S/D electrodes.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140862"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-17DOI: 10.1016/j.tsf.2026.140867
Daniel F. Fernandes , Jaime J. Hernández , Seohan Kim , Alberto Martín–Asensio , Patricia Pedraz , Jang–Hee Yoon , Isabel Rodríguez , Lars Österlund , Tomas Kubart
{"title":"Crystallization kinetics of TiO2 thin films: A comparative study of film deposition conditions","authors":"Daniel F. Fernandes , Jaime J. Hernández , Seohan Kim , Alberto Martín–Asensio , Patricia Pedraz , Jang–Hee Yoon , Isabel Rodríguez , Lars Österlund , Tomas Kubart","doi":"10.1016/j.tsf.2026.140867","DOIUrl":"10.1016/j.tsf.2026.140867","url":null,"abstract":"<div><div>This study investigates the crystallization kinetics of TiO₂ thin films deposited by reactive magnetron sputtering, with the aim of identifying optimal process conditions for initially X-ray amorphous films subjected to post-deposition annealing. Thin films were grown using both high-power impulse magnetron sputtering (HiPIMS) and pulsed direct current magnetron sputtering (pDCMS). Particular attention was given to the different reactive modes of operation and the ionization of the deposition flux. As-deposited films contained traces of anatase, brookite, and rutile phases, revealed by TEM and Raman spectroscopy analysis. The crystallization process during post-deposition annealing was monitored <em>in situ</em> using Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS). All films crystallized into the anatase phase; however, the crystallization kinetics were strongly dependent on the growth conditions. Films deposited by HiPIMS exhibited faster crystallization compared to pDCMS, especially in the absence of substrate heating. Notably, films deposited in the so-called metal mode – characterized by high deposition rates and low oxygen partial pressures – crystallized more rapidly, an effect attributed to the higher internal energy of the as-deposited material. Furthermore, a combination of moderate substrate temperature (100 °C), high oxygen partial pressure and low flux energy input during deposition promoted the formation of a (001)-oriented anatase texture after annealing.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140867"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-21DOI: 10.1016/j.tsf.2026.140870
Sergey I. Pozin, Oxana L. Gribkova, Ekaterina I. Rodina, Dmitriy A. Lypenko, Artem V. Dmitriev, Alexander A. Nekrasov
{"title":"Spray-coated films of water-dispersible polyaniline complexes as hole-injection layers of organic light-emitting diodes: film morphology aspects","authors":"Sergey I. Pozin, Oxana L. Gribkova, Ekaterina I. Rodina, Dmitriy A. Lypenko, Artem V. Dmitriev, Alexander A. Nekrasov","doi":"10.1016/j.tsf.2026.140870","DOIUrl":"10.1016/j.tsf.2026.140870","url":null,"abstract":"<div><div>The paper describes results of comparative testing spray-coated layers of water-dispersible polyaniline (PANI) complexes with polyacids of different chemical structure as hole-injection layers (HILs) in an organic light-emitting diode (OLED) based on a poly(1,4-phenylenevinylene) copolymer (Super Yellow) as an emissive layer. OLEDs using HILs made of poly(3,4-ethylenedioxythiophene) complex with polystyrene sulfonate prepared by spin and spray coating were used as references. OLEDs using HILs based on PANI complexes with poly(4,4′-(2,2′-disulfonic acid)-diphenylene-tere-phthalamide) (t-PASA) and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) demonstrated the highest current efficiencies of 6–7 cd/A, that is about 20% higher than this value in the best reference sample. The results were discussed in terms of crucial influence of the HIL morphology (analyzed in two scales) on the OLEDs' efficiency. Morphology of the HILs made of PANI:t-PASA and PANI:PAMPSA complexes were found to be most favorable in the following scales: few microns scale – moderately rough (but not completely smooth) intrinsic film texture derived from intermolecular packing; tens of microns scale – weak manifestation of irregularities induced by the spray coating method.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140870"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of the microstructure, mechanical and tribological properties of CrAlCN composite coatings with various acetylene flow rates","authors":"Qiong Zhou , Xunhu Wang , Biao Huang , Qiang Chen , Dandan Liang , Ergeng Zhang , Zhibin Lou","doi":"10.1016/j.tsf.2026.140859","DOIUrl":"10.1016/j.tsf.2026.140859","url":null,"abstract":"<div><div>The CrAlCN composite coatings were deposited using cathodic arc technology, and the effects of acetylene (C<sub>2</sub>H<sub>2</sub>) flow rates on the microstructure, mechanical properties, and tribological performance of CrAlCN coatings were investigated. The results reveal that the coating grains are progressively refined, and the crystallographic orientation shifts from (111) and (200) planes to a dominant (200) orientation with increasing C<sub>2</sub>H<sub>2</sub> flow rate from 0 to 60 sccm. The hardness of the coatings first increases and then decreases, and the maximum hardness is achieved at a C<sub>2</sub>H<sub>2</sub> flow rate of 20 sccm. The precipitation of amorphous carbon induces a structural transformation from a single-phase crystalline structure to a nanocrystalline /amorphous composite at a C<sub>2</sub>H<sub>2</sub> flow rate of 60 sccm, thereby leading to the reduction in the coefficient of friction (COF). The wear mechanism of the nc-CrAlCN/a-C composite coatings against Si<sub>3</sub>N<sub>4</sub> counter-balls is characterized by mild adhesive and abrasive wear. The formed lubricating film is prone to being squeezed out of the wear track, resulting in a low COF but a significantly increased wear rate at high C<sub>2</sub>H<sub>2</sub> flow rates. In contrast, the minimum wear rate was observed at a flow rate of 20 sccm, where a continuous carbon-rich lubricating layer is formed on the wear track. Therefore, the optimal C<sub>2</sub>H<sub>2</sub> flow rate significantly optimizes mechanical properties and boosts the tribological performance of the CrAlCN coatings.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140859"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145969297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-23DOI: 10.1016/j.tsf.2026.140873
Jun-Cai Zhang , Hu Li , Jie Huang , Jin-Rui Cai , Zhi-Ping Huang , Li-Mei Lin , Chuan-Dong Zuo , Xin Jin , Gui-Lin Chen
{"title":"The influence of different electron transport layers on the hydrothermal Sb2S3 quasi-epitaxial growth","authors":"Jun-Cai Zhang , Hu Li , Jie Huang , Jin-Rui Cai , Zhi-Ping Huang , Li-Mei Lin , Chuan-Dong Zuo , Xin Jin , Gui-Lin Chen","doi":"10.1016/j.tsf.2026.140873","DOIUrl":"10.1016/j.tsf.2026.140873","url":null,"abstract":"<div><div>Sb<sub>2</sub>S<sub>3</sub> has attracted much attention due to its high absorption coefficient, abundant elemental reserves and stable chemical properties. However, key issues such as interface recombination and poor energy level matching have restricted the improvement of device performance. This study investigated the effects of three electron transport layers (ETLs), CdS, TiO<sub>2</sub> and SnO<sub>2</sub>, on the hydrothermal quasi-epitaxial growth of Sb<sub>2</sub>S<sub>3</sub>. CdS could induce the formation of a continuous and dense Sb<sub>2</sub>S<sub>3</sub> film through S-Sb chemical bridge bonds, while TiO<sub>2</sub> and SnO<sub>2</sub>, due to their surface inertness, led to island-like growth of Sb<sub>2</sub>S<sub>3</sub>, accompanied by interface holes and defects. Device test results indicated that the device with CdS as the ETL had the best performance: power conversion efficiency (PCE) of 6.11 %, the lowest saturation current density (<em>J</em><sub>0</sub>), and effective suppression of interface recombination. Devices with TiO<sub>2</sub> and SnO<sub>2</sub> as ETLs exhibited lower open-circuit voltage (<em>V</em><sub>oc</sub>) and short-circuit current density (<em>J</em><sub>sc</sub>), and poor device performance (2.82 % and 1.09 %) due to severe interface recombination. SCAPS-1D simulation further confirmed that CdS had significant advantages in energy level matching and interface defect control, making it the most suitable ETL among the three for the quasi-epitaxial growth of Sb<sub>2</sub>S<sub>3</sub>, providing a key reference for the development of high-efficiency Sb<sub>2</sub>S<sub>3</sub> solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140873"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146079906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-10DOI: 10.1016/j.tsf.2026.140858
Chaomin Cai , Ruiming Li , Siyu Zhang , Ruitao He , Yuxia Sun , Man Yang , Ying Liu , Hongri Liu
{"title":"Preparation of BaTiS3 film under lower temperature and its Application in Photodetectors","authors":"Chaomin Cai , Ruiming Li , Siyu Zhang , Ruitao He , Yuxia Sun , Man Yang , Ying Liu , Hongri Liu","doi":"10.1016/j.tsf.2026.140858","DOIUrl":"10.1016/j.tsf.2026.140858","url":null,"abstract":"<div><div>Barium titanium sulfide (BaTiS<sub>3</sub>), a quasi-one-dimensional (quasi-1D) chalcogenide, exhibits excellent potential for polarization detection owing to its remarkable optical anisotropy. Moreover, both theoretical computations and experimental investigations have predicted that BaTiS<sub>3</sub> possesses a tunable narrow bandgap within the range of 0.27 - 0.9 eV. However, it has rarely been fabricated into a film morphology and applied in photodetectors, primarily due to the common challenges of preparing ternary sulfide films. Current synthesis of BaTiS₃ predominantly employs a modified chemical vapor transport (CVT) approach, with the core reaction temperature maintained at 1000–1100 °C. In this study, BaTiS<sub>3</sub> powder was fabricated using BaS and TiS<sub>2</sub> as raw materials. With the assistance of an excess of sulfur, the preparation temperature was reduced to 600 °C, and the underlying growth mechanism was systematically explored. Subsequently, BaTiS<sub>3</sub> polycrystalline thin films were prepared through a microcrystalline reconstruction method. Based on this, self-powered photodetectors were fabricated. These photodetectors demonstrated excellent detection performance within the wavelength range from 300 to 560 nm, along with a responsivity of 4.60 mA W⁻¹. Our research not only explored a common growth method for barium-based ternary sulfides but also demonstrated the application of quasi-1D BaTiS<sub>3</sub> in film-based visible light photodetectors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140858"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145969314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-14DOI: 10.1016/j.tsf.2026.140863
V. Cerqueira Silva , Bill D. Aparicio Huacarpuma , Carlos A. Vilca Huayhua , F.F.H. Aragón , J.A.H. Coaquira
{"title":"Effect of the working pressure on the structural, morphological, optical, electrical and gas sensor properties of ZnO films grown by DC magnetron sputtering","authors":"V. Cerqueira Silva , Bill D. Aparicio Huacarpuma , Carlos A. Vilca Huayhua , F.F.H. Aragón , J.A.H. Coaquira","doi":"10.1016/j.tsf.2026.140863","DOIUrl":"10.1016/j.tsf.2026.140863","url":null,"abstract":"<div><div>In this work, ZnO thin films were deposited by DC magnetron sputtering under varying working pressures and subsequently annealed in air, followed by vacuum thermal annealing. The increase of working pressure drive to the reduction of the film thickness, crystallite size, lattice constants, and to the strengthening of the (002) X-ray diffraction peak, suggesting changes in the in oxygen vacancy concentration. Scanning electron microscopy revealed the formation of randomly distributed nanorods, while UV–Vis spectroscopy data analysis evidenced the presence of defect-related levels inside the band gap. As the thickness decreases, Hall measurements show a noticeable drop in charge carrier density and mobility, which is linked to the combined impact of defects and the decreasing size of crystallites. This suggests that thicker films exhibited a higher density of zinc interstitials, whereas thinner films exhibit more oxygen vacancies (V<span><math><msub><mrow></mrow><mrow><mi>O</mi></mrow></msub></math></span>), mainly associated with surface states, as supported by temperature-dependent resistance measurements and photocurrent analysis. Gas detection tests demonstrated a superior response to methane (CH<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>) for thinner films at 200 °C, attributed to their higher oxygen vacancy concentration. Photocurrent and gas sensing measurements showed similar trends, indicating a common defect-driven mechanism. These results highlight the potential of tuning defect chemistry in ZnO films to optimize their performance for gas sensing and optoelectronic devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140863"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-22DOI: 10.1016/j.tsf.2026.140872
S.Y. Huang, C.K. Chen, J.C. Huang
{"title":"Influence of silver content on the antibacterial properties of TiZrAg thin films","authors":"S.Y. Huang, C.K. Chen, J.C. Huang","doi":"10.1016/j.tsf.2026.140872","DOIUrl":"10.1016/j.tsf.2026.140872","url":null,"abstract":"<div><div>This study employs magnetron sputtering to fabricate TiZrAg alloy thin films containing 6 at% and 12 at% silver, with Ti-Zr thin films without silver serving as a control. The aim is to investigate the influence of varying silver content on the antibacterial performance and biocorrosion resistance of the coatings. Experimental results indicate that an increase in silver content correlates with a significant enhancement in the antibacterial efficacy of the Ti-Zr-Ag coatings. The film comprising 6 at% silver demonstrates notable antibacterial effects, while the film with 12 at% silver further augments these properties, confirming the positive impact of higher silver concentrations on antibacterial activity. The improved antimicrobial efficacy is attributed to enhanced Ag<sup>+</sup> release, reduced film grain size from 114 to 42 nm, decreased surface roughness from 5.7 to 2.8 nm, and increased water contact angle from 69.2 to 87.4°. The coatings also exhibit excellent biocorrosion resistance and long-term stability in chloride-containing saline sterilizing environments. Overall, these Ti-Zr-Ag coatings show strong potential for the surface functionalization of medical devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140872"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146079904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-21DOI: 10.1016/j.tsf.2026.140868
S. Vedavarshni , P. Pranav Pradeep , Srinivas G․ , Praveen Kumar , Siju John , Harish C. Barshilia
{"title":"On the compositional and thermal stability of sputter deposited Inconel based multilayer solar absorber coating","authors":"S. Vedavarshni , P. Pranav Pradeep , Srinivas G․ , Praveen Kumar , Siju John , Harish C. Barshilia","doi":"10.1016/j.tsf.2026.140868","DOIUrl":"10.1016/j.tsf.2026.140868","url":null,"abstract":"<div><div>A multilayer concept has been used to coat Inconel-718 in the presence of Ar+O<sub>2</sub> atmosphere. The coating structure of metal oxide/metal/metal oxide was deposited on stainless steel SS304 substrate with the bottom most oxide layer as non-stoichiometric and the top oxide layer as stoichiometric in nature. This led to the solar absorptance of 0.887 and emissivity of 0.19. The absorption of this multilayer stack was increased by depositing an additional layer of SiO<sub>2</sub> which improves the absorptance in the range of 0.940–0.951 without affecting the emittance (0.17 – 0.19). Field Emission Scanning Electron Microscopy analysis was carried out for studying the morphological properties of the coating. The reflectance properties of the coating were analyzed using UV–Vis-NIR spectroscopy and the X-ray diffraction analysis was used for the structural properties. The findings of these studies highlight Inconel's suitability as a solar selective absorber coating. Contrary to high temperature stability of bulk Inconel, thermal stability investigations of the coating reveal its stability only up to 300 °C in air for long durations. A detailed metallographic analysis conducted on both the bulk and the metal layer, to compare the intermetallic phases present, revealed the absence of the intermetallic phases in the metallic layer. This absence indeed caused the deterioration in thermal stability of the absorber layer. Further, energy dispersive X-ray analysis revealed that, unlike the bulk material, the sputtered Inconel layer exhibited absence of Nb composition. This absence of Nb is significant, as it contributes to the formation of intermetallic phases, thereby, influencing the observed differences in thermal behavior.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140868"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146079907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thin Solid FilmsPub Date : 2026-02-01Epub Date: 2026-01-14DOI: 10.1016/j.tsf.2026.140861
Douwe Scholma, Marcel J. Rost
{"title":"Gold silicide formation and preferential grain boundary etching of gold by quartz deposition and removal","authors":"Douwe Scholma, Marcel J. Rost","doi":"10.1016/j.tsf.2026.140861","DOIUrl":"10.1016/j.tsf.2026.140861","url":null,"abstract":"<div><div>Gold–silicon interactions are vital for semiconducting industry, microelectromechanical systems and chemical reactions, where gold serves as a conductor, protective layers, coatings, and as a catalyst. However, gold and silicon exhibit complex behavior, even at low temperatures, including mutual inter-diffusion, alloy formation, and gold-induced silicon oxidation. Here we show that preferential grain-boundary etching occurs on highly (111)-textured polycrystalline gold films, when we sputter-deposit a thin quartz film that we remove afterwards via reactive ion etching. During the quartz deposition silicon atoms diffuse, enabled by the high dislocation and vacancy density, into the grain boundaries of gold forming there a gold-silicide. A gold–silicon reaction happens also on the flat (111) terraces, however, limited by outwards-diffusion of gold, its layer thickness is restricted to around 7 nm. Upon reactive ion etching the gold-silicide is removed leading to small, 6 nm-high gold islands on the flat terraces and grooves at the grain boundaries as deep as 15 nm. Although the maximum sample temperature was only 150 °C, we surprisingly have evidence that Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>Si is formed, which is the first stable low-temperature composition occurring at the eutectic temperature of 363 °C. The above procedure can be used for preferential grain boundary etching of gold, gold nanoparticle creation, and delivers further insight into the complex nature of gold-silicide formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140861"},"PeriodicalIF":2.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145969295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}