Thin Solid Films最新文献

{"title":"Exploration of thin film CoFe2O4 memristors with asymmetric electrodes","authors":"Kiran S. Seetala,&nbsp;William Clower,&nbsp;Matthew J. Hartmann,&nbsp;Sandra Zivanovic","doi":"10.1016/j.tsf.2025.140758","DOIUrl":"10.1016/j.tsf.2025.140758","url":null,"abstract":"<div><div>Memristors have recently attracted significant research interest for applications in memory, neuromorphic computing, and cryptography, with complementary metal-oxide-semiconductor compatible fabrication essential for their integration into modern technology. In this paper, a memristor based on a CoFe₂O₄ thin film is developed and studied by varying its metal top electrode (Ag, Au, or Cr) and its silicon bottom electrode (p- or n-type). In the memristor, oxygen vacancies come together to form conducting filaments spanning from one electrode to another, which are used to change the device’s resistance. Through tweaking the electrode materials, different charge particles such as Ag⁺ ions in the case of silver, positively charged holes in the case of p-type silicon, or negatively charged electrons in the case of n-type silicon, can be used to change the memristor’s behavior and durability. Here, the memristors were able to achieve a resistance ratio of ∼100, a switching voltage of ∼4 V, and excellent retention with only a 6.1 % change in resistance after +5 V set and 0.56 % for a -5 V set after 1 h. The influx of reduced metal ions in memristors utilizing Ag top electrodes makes them more electrically durable than the memristors using Au or Cr. An augmented linear ion model is developed to demonstrate the undesirable effects that scaling will have on the resistance ratio of miniaturized memristors. Without taking these material and scaling effects into account, the introduction of memristors in current technologies will be difficult and challenging.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140758"},"PeriodicalIF":2.0,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced wear resistance of AISI 1045 steel by TiAlN/CrN gradient coatings via toughness-hardness synergy","authors":"Qinqin Wei ,&nbsp;Xin Wang ,&nbsp;Yun Lu ,&nbsp;Zhineng Cheng ,&nbsp;Haoran Dong ,&nbsp;Xiao Wang ,&nbsp;Guoqiang Luo ,&nbsp;Qiang Shen","doi":"10.1016/j.tsf.2025.140756","DOIUrl":"10.1016/j.tsf.2025.140756","url":null,"abstract":"<div><div>The rotating flange of vehicle chassis AISI 1045 steel is prone to friction-induced failure under high-speed and heavy-load conditions, leading to seal deterioration. This work provides a strategy to enhance the wear resistance by depositing multilayered TiAlN/CrN gradient coating on AISI 1045 steel substrates via arc ion plating. The microstructure, mechanical properties, and tribological behavior of the coating were systematically analyzed. The TiAlN/CrN gradient coating consists of CrN layer, TiAlN/CrN multilayer structure, and TiAlN layer, exhibiting high hardness (38.72 GPa) and elastic modulus (374.83 GPa), along with low residual stress (-448.5 MPa) and average friction coefficient (0.72). The maximum wear scar depth remains below the thickness of the TiAlN surface layer, with abrasive wear identified as the dominant mechanism. The gradient architecture effectively alleviates interfacial stress concentration and reduces residual stress through synergistic effects: ductile buffering by the CrN layer, hardness gradient transition via TiAlN/CrN multilayer, and surface hardening by the TiAlN surface layer. This innovative structural design provides a promising surface engineering solution for enhancing wear resistance of metallic materials under heavy-load operating conditions.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"826 ","pages":"Article 140756"},"PeriodicalIF":2.0,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of laser irradiation on the properties of zinc oxide thin films deposited by radio frequency magnetron sputtering","authors":"A. Collado-Hernández ,&nbsp;R. Ramos Blazquez ,&nbsp;M.I. Mendívil-Palma ,&nbsp;D. Fernández-González ,&nbsp;A. López-Liévano ,&nbsp;C. Gómez-Rodríguez ,&nbsp;L.V. García Quiñonez","doi":"10.1016/j.tsf.2025.140753","DOIUrl":"10.1016/j.tsf.2025.140753","url":null,"abstract":"<div><div>Zinc Oxide (ZnO) thin films have been shown to have excellent structural, morphological, optical and electrical properties, which has made them candidates for use in photovoltaic devices.</div><div>These properties can be improved by adding doping materials, controlling times and conditions of the deposition, this can result in toxic and expensive materials, long manufacturing times, specific atmospheric conditions, which can increase production costs and affect the environment. One possibility of property improvement is to only use thermal treatment, such as laser radiation, a more selective, localized, and faster method compared to traditional furnace annealing.</div><div>In this research, ZnO thin films were produced using radio frequency magnetron sputtering and subjected to treatment with a continuous wave carbon dioxide laser to enhance their properties. In X-ray Diffraction, the irradiated ZnO thin films showed a wurtzite structure (zincite) with a preferred orientation in the plane (002). Raman spectroscopy revealed the activation of an unusual B₁^high-B₁^low mode in the irradiated ZnO films. Laser irradiation formed microbumps in the surfaces of the treated thin films, as a form of stress relief and a decrease in surface roughness, which were observed in scanning electron microscopy and atomic force microscopy, respectively.</div><div>Furthermore, the ZnO thin films exhibited high transparency in the visible spectrum, with band gap values ranging from 3.25 to 3.28 eV. The photoresponse of these films was improved with laser treatment at 4 W, 266 W/cm², and 2.5 mm/s. This study offers valuable insights into the fabrication of high-quality crystalline ZnO thin films by using continuous far-infrared laser irradiation as a heat treatment process, which could be applied in solar cell technology.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140753"},"PeriodicalIF":2.0,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144723636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultraviolet detector based on CdS/ZnO piezoelectric heterojunction","authors":"Taiping Teng ,&nbsp;Yuxin Chen ,&nbsp;Yang Peng ,&nbsp;Weiguang Cheng ,&nbsp;Weidong Zhang ,&nbsp;Maobo Fang ,&nbsp;Zhongyu Hou ,&nbsp;Yanfang Wang","doi":"10.1016/j.tsf.2025.140752","DOIUrl":"10.1016/j.tsf.2025.140752","url":null,"abstract":"<div><div>This paper proposes an ultraviolet (UV) light detection device based on a CdS/ZnO piezoelectric heterojunction, which realizes intelligent environmental monitoring through a piezoelectric-optical response coupling mechanism. The CdS/ZnO core-shell nanowire arrays were fabricated on a stainless steel substrate via a combination of hydrothermal synthesis and Successive Ionic Layer Adsorption and Reaction (SILAR) methods, forming a heterojunction with both piezoelectric and UV-sensitive properties. Material characterization revealed that the structure exhibits an extended absorption in the UV–visible region up to 506 nm and a bandgap of approximately 2.45 eV. Photoelectrical measurements demonstrated a significant enhancement in current density under 395 nm UV light irradiation. Piezoelectric output tests disclosed that the CdS/ZnO heterojunction possesses high sensitivity to UV light (<em>R</em> = 53.7 %). Signal acquisition and threshold discrimination were achieved using an STM32 development board, enabling the device to distinguish tress and UV irradiation. This study offers an approach for the development of integrated, low-power intelligent UV sensing systems.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140752"},"PeriodicalIF":2.0,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144713556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic degradation of ofloxacin by various nanostructured TiO2 thin films produced via Ti–H2O2 interaction","authors":"Iram Hussain ,&nbsp;Lisha Zhang ,&nbsp;Zhizhen Ye ,&nbsp;Jin-Ming Wu","doi":"10.1016/j.tsf.2025.140751","DOIUrl":"10.1016/j.tsf.2025.140751","url":null,"abstract":"<div><div>In this work, a low-temperature method for creating nanostructured TiO₂ thin films with controlled morphologies for the photocatalytic degradation of the persistent antibiotic pollutant ofloxacin in water is presented. A Ti–H₂O₂ interaction was used to produce hydrogen titanate nanowires, which were subsequently converted into three different nanostructures: anatase nanowires by calcined at 450 °C, porous nanorods and hierarchical nanoflowers by treating at 80 °C for 72 h with hot water and sulfuric acid, respectively. Controls over surface area, hydroxyl group contents, and crystal phase composition were made possible by these post-treatments. With a reaction rate constant of 0.72 h⁻¹ and a photocatalytic efficiency of 98 % ofloxacin degradation in 4 h under UV light, TiO₂ nanoflowers outperformed commercial benchmark P25 mixed phase TiO₂ nanoparticle films (0.64 h⁻¹) among the different nanostructures. The mixed anatase-rutile phase, high surface area of 49.1 m²/g, large pore volume of 0.15 mL/g, and numerous surface hydroxyl groups are responsible for the superior performance. These results show that morphology-engineered TiO₂ films can be used to treat water effectively through photocatalysis.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140751"},"PeriodicalIF":2.0,"publicationDate":"2025-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144713555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure and hardness of Cr2O3 films grown by pulsed laser deposition","authors":"Xiang Li ,&nbsp;Tingting Yao ,&nbsp;Yixiao Jiang ,&nbsp;Ang Tao ,&nbsp;Xuexi Yan ,&nbsp;Zhiqing Yang ,&nbsp;Hengqiang Ye ,&nbsp;Chunlin Chen","doi":"10.1016/j.tsf.2025.140749","DOIUrl":"10.1016/j.tsf.2025.140749","url":null,"abstract":"<div><div>The microstructure and hardness of Cr₂O₃ films deposited on SrTiO₃ (111), Al₂O₃ (0001) and Al₂O₃ (11<span><math><mover><mrow><mn>2</mn></mrow><mo>‾</mo></mover></math></span>0) substrates by pulsed laser deposition have been characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, and nanoindentation techniques. Microstructural characterizations revealed that the Cr₂O₃ films exhibited orientated growth but with different defects. The (0001) Cr₂O₃/SrTiO₃ film has a high density of nanotwins, whereas both types of Cr₂O₃/Al₂O₃ films contain numerous stacking faults. The nanoindentation tests showed that the (0001) Cr₂O₃/SrTiO₃ film had a hardness of 38.5 GPa, which is higher that of the (0001) Cr₂O₃/Al₂O₃ film (36.2 GPa), This indicates that the nanotwins enhance hardness more than the stacking faults. The (11<span><math><mover><mn>2</mn><mo>¯</mo></mover></math></span>0) Cr₂O₃/Al₂O₃ film exhibited the lowest hardness of 31.7 GPa, indicating that the growth orientation of the films also greatly influences hardness. The findings indicate that the hardness of Cr₂O₃ films can be regulated by the defects present in the films and their growth orientation, thereby providing scientific foundation and technical assistance for the advancement of high-performance Cr₂O₃ films.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140749"},"PeriodicalIF":2.0,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144686767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanocolumnar ZrCu thin film metallic glass with tailored mechanical and electrical properties","authors":"Evgeniy Boltynjuk ,&nbsp;Francesco Bignoli ,&nbsp;Sree Harsha Nandam ,&nbsp;Damien Faurie ,&nbsp;Alexander Welle ,&nbsp;Robert Kruk ,&nbsp;Philippe Djemia ,&nbsp;Horst Hahn ,&nbsp;Yulia Ivanisenko ,&nbsp;Matteo Ghidelli","doi":"10.1016/j.tsf.2025.140748","DOIUrl":"10.1016/j.tsf.2025.140748","url":null,"abstract":"<div><div>Thin-film metallic glasses (TFMGs) are promising materials for flexible electronics due to their large deformability and metallic-like electrical conductivity. Here, we synthesize homogeneous and nanocolumnar ZrCu TFMGs with tailored column size ranging from 16 up to 60 nm, investigating the relationship among atomic structure, electrical and mechanical properties focusing on their potential applications in flexible electronics. Tracer diffusion experiments indicate an absence of macroscopic cracks and enhanced diffusion coefficient for nanocolumnar TFMGs, up to one order of magnitude higher than in homogeneous counterpart, due to the presence of intercolumnar interfaces. We show that electrical resistivity increases with decreasing column size (from 570.0 ± 11.6 down to 285.9 ± 12.6 µΩ × cm) due to the enhanced electron scattering events at intercolumnar interfaces. Tensile tests on polymeric substrates reveal that the crack onset strain increases from 0.8 ± 0.05 up to 1.6 ± 0.05 % for large diameter nanocolumns due to the lower density of intercolumnar interfaces and presence of strong Cu-Cu bonds. Overall, we show how nanoengineering design concepts can be applied to TFMGs to tune their mechanical and electrical performance by controlling the nanocolumnar growth, paving the way for their potential applications in flexible electronics.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140748"},"PeriodicalIF":2.0,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144686768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystallization control of CH3NH3PbI3 film in inverted perovskite solar cells via atmospheric vapor-assisted deposition","authors":"Zahra Saki ,&nbsp;Nima Taghavinia","doi":"10.1016/j.tsf.2025.140745","DOIUrl":"10.1016/j.tsf.2025.140745","url":null,"abstract":"<div><div>The performance of halide perovskite solar cells (PSCs) is highly dependent on the halide perovskite film quality, i.e. crystallinity, surface coverage, and morphology. Conventionally, the antisolvent treatment is used to form high-quality halide perovskite films, but it is not a scale-up-friendly method. Antisolvent-free methods usually have the challenge of proper crystallization, as well as pinhole or coverage issues. Here, we explore a vapor-assisted deposition to study how we can approach a high-quality and pinhole-free CH₃NH₃PbI₃ (MAPbI₃) perovskite film formation process in inverted PSCs. Furthermore, the MAPbI₃ perovskite films are formed by exposing PbI₂ thin film to CH₃NH₃I (MAI) vapor in air. To reach a crystalline and uniform MAPbI₃ perovskite film, the effect of reaction temperature (130 – 170 °C) and reaction time (0.5 – 2.5 h) between PbI₂-coated films and MAI vapor on the MAPbI₃ perovskite film formation and resultant device performance has been explored. The detailed surface morphological, optical, and structural characterizations explicitly reveal that the pinhole-free, fully crystalline, and high-quality MAPbI₃ perovskite film forms at the reaction temperature and reaction time of 150 °C and 2.0 h, respectively. In addition, the device employing MAPbI₃ perovskite films prepared at the optimal reaction temperature and reaction time attains a champion power conversion efficiency of 14.3 %. Besides, the long-term stability test demonstrates that the inverted PSCs keep 80 % of their initial performance after 20 days of storage under dark ambient conditions (∼ 25 °C; 25 – 40 % humidity).</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140745"},"PeriodicalIF":2.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144662093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resolving the microstructure of aluminum-doped zinc oxide thin films grown on different silicon heterojunction solar cell structures by advanced transmission electron microscopy","authors":"Sara Alkhereibi ,&nbsp;Muhammad Ainul Yaqin ,&nbsp;Alexander Eberst ,&nbsp;Binbin Xu ,&nbsp;Janghyun Jo ,&nbsp;Husain Alsamamra ,&nbsp;Andreas Lambertz ,&nbsp;Uwe Rau ,&nbsp;Kaining Ding ,&nbsp;Joachim Mayer","doi":"10.1016/j.tsf.2025.140744","DOIUrl":"10.1016/j.tsf.2025.140744","url":null,"abstract":"<div><div>Advanced microscopy techniques have been employed to resolve the microstructure of transparent conductive oxide (TCO) contacts in silicon heterojunction solar cells. Aluminum-doped zinc oxide (AZO) stands out as a TCO material because of its low cost, abundance, and good optoelectrical properties. The polycrystalline AZO thin films have yielded promising results in solar cell design. However, understanding the nanostructure of AZO thin-film materials is vital for enhancing the cell performance by focusing on the formation of large grains and their influence on the charge-carrier mobility of the film. Therefore, we employed high-resolution transmission electron microscopy (HRTEM) and precession-assisted four-dimensional scanning transmission electron microscopy (4D-STEM) with an automated crystal orientation analysis. These techniques can be used to determine the grain sizes of AZO films sputtered on hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H) layers. Columnar grains in the AZO/a-Si:H film are evident in the grain mapping with diameters greater than 10 nm, whereas in the AZO/nc-Si:H film, the grains begin at diameters less than 10 nm, showing smaller grains near the substrate than at the top of the film. Additionally, the double-layer with indium-thin doped oxide (ITO)/AZO stack started with grain diameters varying from 5 to 90 nm. They exhibit significantly larger and irregular boundaries. Therefore, microstructural characterization showed that larger columnar grains might lead to higher mobility in the AZO layer. This finding indicates that the impact of the ITO seed layer on AZO significantly enhances grain size, improves charge carrier mobility, and overall improves the power conversion efficiency (<em>ƞ</em>) to be 23.6% comparable to those of AZO on a-Si:H and nc-Si:H.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140744"},"PeriodicalIF":2.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144656539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of non-stoichiometry on the structural and electronic metal-insulator transition in 18O isotope-doped vanadium oxide films","authors":"Oksana Romanova ,&nbsp;Sergey Aplesnin ,&nbsp;Yulia Pyastolova ,&nbsp;Natalya Cheremnykh ,&nbsp;Maxim Sitnikov ,&nbsp;Petr Shvets ,&nbsp;Ksenia Maksimova ,&nbsp;Alexander Goikhman ,&nbsp;Lubov Udod","doi":"10.1016/j.tsf.2025.140746","DOIUrl":"10.1016/j.tsf.2025.140746","url":null,"abstract":"<div><div>The synthesis of vanadium oxide compounds, V₂¹⁸O_3-x, with oxygen non-stoichiometry and heavy oxygen isotope doping (¹⁸O), was achieved via the cathode arc sputtering method. The microstructural characteristics and stoichiometric properties of the resulting nanocrystalline films were examined using X-ray diffraction, atomic force microscopy and Rutherford backscatter spectrometry. The concentration of defects leading to the suppression of the structural and electronic metal-insulator transition was evaluated through Raman spectroscopy and the analysis of electrophysical properties. A semi-empirical simulation of the lattice dynamics of vanadium oxide was also performed. Notable temperature anomalies in resistance, impedance, and relaxation time were observed. A model involving the deformation of octahedra and the splitting of oxygen vacancies multiplets was proposed to explain the formation of impurity subbands. Furthermore, a change in the sign of magnetoresistance and magnetoimpedance at specific temperatures, along with the effect of photoconductivity, was discovered.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"825 ","pages":"Article 140746"},"PeriodicalIF":2.0,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144656540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}